WILLAS FM120-M DTA123JUA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-323 optimize board space. Features • Low power loss, high efficiency. • 0.146(3.7) 0.130(3.3) • • • Terminals :Plated terminals, Absolute maximum ratings @ 25кsolderable per MIL-STD-750 0.071(1.8) 0.056(1.4) .096(2.45) .078(2.00) • • • 0.012(0.3) Typ. .004(0.10)MIN. Pb-Free package is available current capability, low forward voltage drop. • High RoHS product for packing • High surge capability.code suffix ”G” for overvoltage • Guardring Halogen free product for packingprotection. code suffix “H” • Ultra high-speed Epoxy meets UL 94 V-0switching. flammability rating epitaxial planar chip, metal silicon junction. Moisure• Silicon Sensitivity Level 1 Lead-free parts meet environmental standards • Built-in bias resistors enable the configuration of anofinverter circuit MIL-STD-19500 /228 without connecting external input resistors • RoHS product for packing code suffix "G" The bias resistors consist of thin-film resistors with complete Halogen free product for packing code suffix "H" isolation to allow negative biasing of the input. They also have the Mechanical data advantage of almost completely eliminating parasitic effects. Epoxy : UL94-V0 rated flame retardant • Only the on/off conditions need to be set for operation, making device design Molded plastic, SOD-123H • Case :easy 0.040(1.0) 0.024(0.6) .010(0.25) .003(0.08) 0.031(0.8) Typ. , 0.031(0.8) Typ. .054(1.35) .045(1.15) Method 2026 Typ Max Unit .087(2.20) Symbol Parameter Min --V VCC voltage -50 .070(1.80) Dimensions in inches and (millimeters) •Supply Polarity : Indicated by cathode band ----V VIN Input voltage -12 5 • Mounting Position : Any -100 IO --mA Output current ---100 IC(MAX) • Weight : Approximated 0.011 gram --mW Pd Power dissipation --200 --ć Tj Junction temperature --150 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS --150 ć Tstg Storage temperature -55 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Symbol Parameter Min Typ Marking Code VI(off) -0.5 --Input voltage (V =-5V, I =-100A) Maximum Recurrent PeakCCReverseO Voltage VRRM ----VI(on) (VO=-0.3V, IO=-5mA) MaximumOutput RMS Voltage VO(on) voltage = (IO/II -5mA/-0.25mA --- VRMS--IMaximum = Input current (V --- VDC --I I -5V) DC Blocking Voltage IO(off) Output current (VCC= =-50V, VI 0) ----Maximum Average Forward Rectified Current IO --G DC current gain (V = I 80 I O=-5V, O -10mA) R1 Input resistance 1.54 2.2 Peak Forward Surge Current 8.3 ms single half sine-wave R2/R1 Resistance ratio 17 IFSM 21 superimposed on rated load (JEDEC method) Transition frequency fT --250 (VO =-10V, IO=5mA,(Note f=100MHz) Typical Thermal Resistance 2) RΘJA CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range .056(1.40) .047(1.20)FM180-MH FM1100-MH FM1150-MH FM1200SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH 12Max --20 -1.1 14-0.3 20-3.6 -0.5 --2.86 26 --- Unit 13 V 30 V 21V 30mA A K¡ MHz 14 40 28 40 15 50 16 60 18 80 35 42 .004(0.10)MAX. 50 60 10 100 115 150 120 200 56 70 105 140 80 100 150 200 1.0 30 .016(0.40) .008(0.20) 40 120 Dimensions in inches and (millimeters) -55 to +150 .043(1.10) .032(0.80) Electrical Characteristics @ 25к RATINGS -55 to +125 - 65 to +175 TSTG CHARACTERISTICS Maximum Forward Voltage at 1.0A DC SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M *Marking: 132 VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ NOTES: 0.50 Suggested Solder Pad Layout0.85 0.5 0.70 IR 0.92 10 0.90 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.9 0.70 1.90 mm 2- Thermal Resistance From Junction to Ambient 0.65 0.65 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M DTA123JUA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 14 40 15 50 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA123JUA THRU PNP Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Features Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) Device PN Packing high efficiency. • Low power loss, 0.130(3.3) (1)low (2)forward voltage drop. • High current capability, DTA123JUA –T G ‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability. Note: (1) Packing code, Tape & Reel Packing for overvoltage protection. • Guardring • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20% For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM use of any product or circuit. superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 Storagelife‐saving implant or other applications intended for life‐sustaining or other related Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.