WILLAS FM120-M SE340 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. for overvoltage protection. • Guardring P-Channel Enhancement Mode Field Effect Transistor • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • FEATURELead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. SOT-23 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 z High•dense cell design for code extremely RoHS product for packing suffix "G"low RDS(ON). Halogen free product for packing code suffix "H" Exceptional on-resistance and maximum DC current capability Mechanical data Pb-Free package is available • Epoxy : UL94-V0 rated flame retardant RoHS product for packing code suffix ”G” • Case : Molded plastic, SOD-123H Halogen free product for packing code suffix “H” , • Terminals :Plated terminals, solderable per MIL-STD-750 z z 1. GATE 2. SOURCE 3. DRAIN 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) D MARKING: R1 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% G FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200SYMBOL FM120-MH FM130-MH FM140-MH S RATINGS Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 Maximum (T Maximumratings DC Blocking Voltage a=25℃ unless otherwise 20 VDC noted) IO Maximum Average Forward Rectified Current Parameter Peak Forward Surge Current 8.3 ms single half sine-wave superimposedVoltage on rated load (JEDEC method) Drain-Source IFSM RΘJA Typical Thermal Resistance (Note 2) Gate-Source Voltage Symbol VGS CJ Operating Temperature Range TJ ID TSTG Continuous Drain Current Power Dissipation Storage Temperature Range Thermal Resistance from Junction to Ambient CHARACTERISTICS Junction Temperature (t<5s) Storage Temperature Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage -30 40 120 ±12 -4.2 PD 350 - 65 to +175 RθJA 357 -55 to +125 Unit V V A -55 to +150 mW ℃/W SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Forward Voltage at 1.0A DC Value VDS Typical Junction Capacitance (Note 1) 1.0 30 @T A=125℃ IR TJ TSTG 0.50 150 0.70 -55~+150 0.85 0.5 ℃ ℃ 0.9 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M SE340 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. Electrical• High characteristics (T =25℃ unless otherwise noted) current capability,alow forward voltage drop. • High surge capability. Symbol Test Condition Guardring for overvoltage protection. • Parameter • Ultra high-speed switching. Off characteristics • Silicon epitaxial planar chip, metal silicon junction. Drain-source breakdown voltage V(BR)DSS standards VGS = 0V, parts meet environmental of ID =-250µA • Lead-free 0.146(3.7) 0.130(3.3) Min Typ 0.012(0.3) Typ. Max Units 0.071(1.8) 0.056(1.4) -30 V MIL-STD-19500 /228 Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V • RoHS product for packing code suffix "G" Gate-sourceHalogen leakagefree current IGSS VGS product for packing code suffix "H"=±12V, VDS = 0V -1 µA ±100 nA 65 mΩ 75 mΩ 90 mΩ Mechanical data On characteristics • Epoxy : UL94-V0 rated flame retardant VGS =-10V, ID =-4.2A Drain-source on-resistance : Molded plastic, SOD-123H • Case RDS(on) VGS =-4.5V, ID =-4A, (note 1) • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. VGS =-2.5V,ID=-1A Method 2026 • Polarity : Indicated band Forward tranconductance (noteby 1)cathodegFS VDS =-5V, ID =-5A • Mounting Gate threshold voltagePosition : Any VGS(th) • Weight : Approximated 0.011 gram Dynamic characteristics (note 2) VDS =VGS, ID =-250µA 0.040(1.0) 0.024(0.6) 7Dimensions in inches and (millimeters) S -0.7 -1.3 V Input capacitance MAXIMUM RATINGS CissAND ELECTRICAL CHARACTERISTICS 954 pF Ratings at 25℃ ambient temperature unless specified.GS =0V,f =1MHz VDS =-15V,V Output capacitance Coss otherwise 115 pF 77 pF Single phase half wave, 60Hz, resistive of inductive load. Reverse transfer capacitance Crss For capacitive load, derate current by 20% Switching characteristics (note 2) RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Turn-on delay time VRRM 12 20 13 30 14 40 15 50 16 60 6.3 18 80 115 150 120 200 VRMS 14 21 28 35 42 3.2 ns 10 100 56 140 20 30 40 50 60 80 ns 105 VDC 38.2 70 100 150 200 12 ns td(on) Maximum Recurrent Peak Reverse Voltage Turn-on rise time Maximum RMS Voltage Turn-off delay time tr td(off) Maximum DC Blocking Voltage VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=6Ω Turn-off fall Time Maximum Average Forward Rectified Current tf IO 1.0 30 ratings Drain-source diode characteristics and maximum Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Diode forward voltage (note 1) method) VSD IFSM IS=-1A,VGS=0V RΘJA Typical Thermal Resistance (Note 2) Note : Typical Junction Capacitance (Note 1) 1. 0.031(0.8) Typ. Pulse Test : Pulse width≤300µs, duty cycle≤2%. Operating Temperature Range 2. Storage These Temperature parametersRange have no way to verify. CJ TJ -1 40 120 -55 to +125 ns V -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SE340 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Features Typical Characteristics Package outline • Batch process design, excellent power dissipation offers Output Characteristics better reverse leakage current and thermal resistance. -25 -10 -0 Pulsed -2 0.071(1.8) 0.056(1.4) -1 DRAIN TO SOURCE VOLTAGE VDS Method 2026 120 0.012(0.3) Typ. (A) -3 • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , -1 -2 -3 -4 -5 • Terminals :Plated terminals, solderable per MIL-STD-750 -0 0.146(3.7) 0.130(3.3) -4 Mechanical data -5 Ta=25℃ GS ID ID DRAIN CURRENT (A) -20 -15 GS GS board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. VGS=-2.5V • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" VGS"H" =-2.0V Halogen free product for packing code suffix DRAIN CURRENT a optimize Pulsed Transfer Characteristics SOD-123H -5 Low mounted order to V surface =-10V V =-4.5VapplicationVin=-3.0V T•=25 ℃ profile 0.040(1.0) 0.024(0.6) -0 -0.0 0.031(0.8) Typ. -0.5 (V) • Polarity : Indicated by cathode band • Mounting Position RDS(ON) : Any —— ID • Weight : Approximated 0.011 gram T =25℃ -1.0 -1.5 GATE TO SOURCE VOLTAGE VGS (V) Dimensions in inches and (millimeters) —— RDS(ON) VGS 100 Ta=25℃ a Pulsed 0.031(0.8) Typ. -2.5 -2.0 Pulsed MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 80 RATINGS ON-RESISTANCE VRRM 60 Maximum Recurrent Peak Reverse Voltage VGS=-10V VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current IO IFSM Maximum RMS Voltage 40 Peak Forward Surge Current 8.3 ms single half sine-wave 20 -0 -2 -4 -6 superimposed on rated load (JEDEC method) DRAIN CURRENT Resistance (Note 2) ID -8 (A) -10 CJ Operating Temperature Range TJ Storage Temperature RangeI -10 S Ta=25℃ Pulsed —— (A) 15 50 16 I =-2A 60 D 18 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 3040 40 50 60 80 100 150 200 20 1.0 30 -0 -2 -4 -6 GATE TO SOURCE VOLTAGE 40 120 -55 to +125 -8 VGS -10 (V) -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Average Reverse Current at @T A=25℃ @T A=125℃ 0.50 0.70 0.85 0.9 0.5 IR 0.92 10 IS -0.1 14 40 TSTG VSD CHARACTERISTICS Rated DC Blocking Voltage 60 13 30 RΘJA Typical Junction Capacitance (Note 1) Maximum Forward Voltage at 1.0A DC -1 12 20 ON-RESISTANCE SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VGS=-4.5V Marking Code Typical Thermal 80 RDS(ON) (mΩ) RDS(ON) (mΩ) 100 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. VGS=-2.5V For capacitive load, derate current by 20% SOURCE CURRENT NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. -0.01 2- Thermal Resistance From Junction to Ambient -1E-3 -1E-4 -1E-5 -0.0 2012-06 2012-10 -0.3 -0.6 SOURCE TO DRAIN VOLTAGE -0.9 VSD (V) -1.2 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M SE340 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Prod SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-23 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" .122(3.10) • Epoxy : UL94-V0 rated flame retardant .106(2.70) Mechanical data .063(1.60) .047(1.20) 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 Marking Code .080(2.04) Maximum RMS Voltage .070(1.78) Maximum DC Blocking Voltage Maximum Recurrent Peak Reverse Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 13 30 14 40 15 50 16 60 VRMS 14 21 28 35 42 VDC 20 30 40 50 60 IO IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range VRRM 12 20 CHARACTERISTICS 80 100 80 100 .003(0.08) 56 70 115 150 120 200 105 140 150 200 40 120 -55 to +125 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage TSTG .004(0.10)MAX. .008(0.20) 18 10 1.0 30 @T A=125℃ IR NOTES: .020(0.50) 2- Thermal Resistance From Junction to Ambient .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 0.70 0.85 0.9 0.5 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 0.92 10 Dimensions in inches and (millimeters) 2012-06 2012-10 WILLAS ELECTRONIC CO Rev.D WILLAS ELECTRONIC CORP.