WILLAS FM120-M DTC114EUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Features • Low profile surface mounted application in order to better reverse leakage current and thermal resistance. • SOD-123H SOT-323 board space. Pb-Freeoptimize package is available Low power loss, highcode efficiency. RoHS •product for packing suffix ”G” • High current capability, low forward voltage drop. Halogen freesurge product for packing code suffix “H” capability. • High Epoxy •meets UL 94 V-0 flammability rating Guardring for overvoltage protection. Moisure Sensitivity Level 1 • Ultra high-speed switching. Built-in•bias resistors enable of an inverter circuit Silicon epitaxial planar the chip,configuration metal silicon junction. without• connecting external input resistors Lead-free parts meet environmental standards of The biasMIL-STD-19500 resistors consist of thin-film resistors with complete /228 product for packing code of suffix • RoHS isolation to allow negative biasing the"G" input. They also have the Halogen free product for packing code suffixparasitic "H" advantage of almost completely eliminating effects. Mechanical data Only the on/off conditions need to be set for operation, making device •design Epoxy :easy UL94-V0 rated flame retardant • Absolute •maximum ratings @SOD-123H 25к Case : Molded plastic, Symbol VCC VIN IO Pd Tj Tstg Parameter Minper MIL-STD-750 Typ Max • Terminals :Plated terminals, solderable Supply voltage --Method 2026 Input voltage -10 current • Output Polarity : Indicated by cathode band --Power dissipation --• Mounting Position : Any Junction temperature --• Storage Weighttemperature : Approximated 0.011 gram -55 50 --50 200 150 --- --40 100 ----150 , Unit V V mA mW ć ć .004(0.10)MIN. 0.071(1.8) 0.056(1.4) .096(2.45) .078(2.00) • 0.012(0.3) Typ. 0.040(1.0) .010(0.25)0.024(0.6) .003(0.08) 0.031(0.8) Typ. 0.031(0.8) Typ. .087(2.20) .070(1.80) Dimensions in inches and (millimeters) .054(1.35) .045(1.15) • • • 0.146(3.7) 0.130(3.3) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1,1 *1' 287 1 .043(1.10) .032(0.80) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz,@ resistive Electrical Characteristics 25к of inductive load. .056(1.40) For capacitive load, derate current by 20% Symbol Parameter Min Typ Max Unit .047(1.20) --VI(off) --V 0.5 Input voltage (VCC=5V, IO=100A) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M RATINGS ----3.0 V VI(on) (VO=0.3V, IO=10mA) Marking Code 13 V 14 15 16 18 10 115 120 VO(on) Output voltage (I= --0.1 12 0.3 O/II 10mA/0.5mA) 200.88 30mA 40 50 60 80 100 150 200 Maximum Recurrent Peak Voltage II = Input current (VI Reverse 5V) ---VRRM --IO(off) current (VCC = =50V, VI 0) ---VRMS --14 0.5 21A 28 35 42 56 70 105 140 MaximumOutput RMS Voltage .004(0.10)MAX. GI DC current gain (VO=5V, = IO 5mA) 30 ----Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 V DC R1 Input resistance 7.0 10 K¡ 13 Average Forward 1.0 R2Maximum /R1 Resistance ratio Rectified Current 0.8 IO 1.0 1.2 Transition frequency fT --- 250 --MHz .016(0.40) Peak Forward 8.3f=100MHz) ms single half sine-wave (VO Surge =10V,Current IO=5mA, 30 IFSM .008(0.20) superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 40 120 Dimensions in inches and (millimeters) -55 to +150 -55 to +125 Suggested Solder Pad Layout - 65 to +175 TSTG CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 0.70 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M MARKING: 24 VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.700.90 0.9 0.85 0.5 0.92 10 1.90 mm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-0 0.65 0.65 2012-06 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC114EUATHRU NPN Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Typical Characteristics Features excellent power dissipation offers • Batch process design, ON Characteristics better reverse leakage current and thermal resistance. =0.3V to O • Low profile surface mounted application in Vorder optimize board space. 30• Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. 10 • Guardring for overvoltage protection. • Ultra high-speed switching. Ta=25℃ 3• Silicon epitaxial planar chip, metal silicon junction. 100℃ • Lead-free parts meet environmental standards of MIL-STD-19500 /228 1 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" VCC=5V Ta=100℃ 25℃ (mA) 3 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. IO 1 OUTPUT CURRENT (V) VI(ON) INPUT VOLTAGE OFF Characteristics SOD-123H 10 100 0.071(1.8) 0.056(1.4) 0.3 0.1 Mechanical data 0.3 0.03 • Epoxy : UL94-V0 rated flame retardant 0.1• Case : Molded plastic, SOD-123H 0.1 1 10 100 3 30 0.3 , • Terminals :Plated terminals, per MIL-STD-750 OUTPUT CURRENT solderable I (mA) 0.01 0.0 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.4 O 0.8 1.2 INPUT VOLTAGE VI(OFF) 1.6 0.031(0.8) 2.0 Typ. (V) Method 2026 • Polarity : Indicated by cathode band : Any —— IO • Mounting PositionVO(ON) 1 • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) GI 1000 IO/II=20 —— IO VO=5V Ta=100℃ 300 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 25℃ Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current IO IFSM 0.03 Peak 0.01 Forward Surge Current 8.3 ms single half sine-wave 10 OUTPUT CURRENT Typical Thermal Resistance (Note 2) 30 IO (mA) CJ Operating Temperature Range CO Storage 10 Temperature Range TJ —— VR 1 0.1 16 60 18 80 10 100 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 0.3 1.0 30 3 1 OUTPUT CURRENT 40 120 -55 to +125 10 IO 30 100 (mA) -55 to +150 PD —— Ta - 65 to +175 400 VF (pF) 0.50 IR @T A=125℃ CO OUTPUT CAPACITANCE 3 15 50 350 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH Maximum Average Reverse Current at @T A=25℃ 6 300 250 POWER DISSIPATION NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 14 40 10 f=1MHz Ta=25℃ CHARACTERISTICS Rated DC Blocking Voltage 30 TSTG Maximum Forward Voltage at 1.0A DC 8 21 100 RΘJA Typical Junction Capacitance (Note 1) 13 30 (mW) 3 superimposed on rated load (JEDEC method) GI SYMBOL FM120-MH FM130-MH 30 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code 1 DC CURRENT GAIN RATINGS 0.1 100 PD OUTPUT VOLTAGE VO(ON) (V) 0.3 at 25℃ ambient temperature unless otherwise specified. Ratings Single phase half wave, 60Hz, resistive of inductive load. Ta=100℃ For capacitive load, derate current by 20% 25℃ 4 2- Thermal Resistance From Junction to Ambient 2 0.70 0.9 0.85 0.92 0.5 10 DTC114EUA 200 150 100 50 0 0 2012-06 2012-0 4 8 12 REVERSE BIAS VOLTAGE 16 VR (V) 20 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC114EUATHRU NPN Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ Features Pb Free Product PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) • High current capability,(1)low(2)forward voltage drop. DTC114EUA –T G ‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability. Note: (1) Packing code, Tape & Reel Packing for overvoltage protection. • Guardring • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20% For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM use of any product or circuit. superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . Storage Temperature Range 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.