WILLAS FM120-M+ BAS16WTHRU FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline SWITCHING DIODE Features FEATURES • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. z Fast Switching Speed • Low profile surface mounted application in order to optimize boardPurpose space. z For General Switching Applications • Low power loss, high efficiency. z High Conductance • High current capability, low forward voltage drop. z package is available High surge capability. •Pb-Free Guardring for overvoltage •RoHS product for packingprotection. code suffix ”G” • Ultra high-speed switching. Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. z Moisture Level 1 parts meet environmental standards of • Lead-freeSensitivity • Pb Free Product SOT-323 SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1 0.071(1.8) 0.056(1.4) 3 2 MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) ina ry • Epoxy : UL94-V0 rated flame retardant Marking: A2: Molded plastic, SOD-123H • Case , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Maximum Ratings and 2026 Electrical Characteristics, Single Diode @Ta=25℃ Method • Polarity : Indicated by cathode band Parameter • Mounting Position : Any Non-Repetitive Peak Reverse Voltage • Weight : Approximated 0.011 gram Symbol Limit VRM 100 Dimensions in inches and (millimeters) Unit V im VRRM Peak Repetitive Peak Reverse Voltage RATINGS AND ELECTRICAL CHARACTERISTICS 75 Working Peak MAXIMUM Reverse Voltage VRWM Ratings at 25℃Voltage ambient temperature unless otherwise specified. DC Blocking VR Single phase half wave, 60Hz, resistive of inductive load. VR(RMS) For capacitive load, derate current by 20% RMS Reverse Voltage Forward Continuous Current IFM RATINGS Pr el Maximum Recurrent Peak Current Reverse Voltage Peak Forward Surge @t=1.0μs @t =1.0s Maximum DC Blocking Voltage Power Dissipation Maximum Average Forward Rectified Current 53 V 300 mA SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN 12 20 13 30 150 14 40 2.0 15 50 16 60 18 80 mA 10 VRRM 100 115 150 120 200 Vo VRMS 14 21 35 42 56 70 105 140 Vo VDC 20 30 28 1.0 50 60 80 100 150 200 Vo IO Average Rectified Output Current Marking Code Maximum RMS Voltage Thermal Resistance Junction to Ambient Peak Forward Surge Current 8.3 ms single half sine-wave Junction Temperature superimposed on rated load (JEDEC method) Storage Temperature Typical Thermal Resistance (Note 2) IFSM PD 40 200 IO RθJA IFSM Tj TSTG RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ 150 Storage Temperature Range -55~+150 Symbol CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Reverse breakdown voltage VF(BR) V @T A=125℃ current IR IR NOTES: Test conditions IR= 10µA 0.50 VR=75V VR=20V VF Diode capacitance CD VR=0, f=1MHz Reveres recovery time trr voltageFrom Junction to Ambient 2-Forward Thermal Resistance 2012-06 2012-1 Am ℃/W ℃ Am ℃ ℃/ P -55 to +150 ℃ - 65 to +175 IF=1mA IF=10mA IF=50mA IF=150mA 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. mW Min ℃ Max Unit SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage Reverse voltage leakage 40 120 TSTG Parameter A 1.0 30 625 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise -55 to +125 specified) V IF=IR=10mA,Irr=0.1×IR, RL=100Ω 0.70 75 0.5 10 0.85 0.9 V 0.92 Vo 1 µA 25 nA 0.715 0.855 1 1.25 V 2 pF 4 ns mA WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS SOT-323 Plastic-Encapsulate Diodes FM120-M+ BAS16W THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-323 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) MIL-STD-19500 /228 Halogen free product for packing code suffix "H" .087(2.20) • Epoxy : UL94-V0 rated flame retardant .070(1.80) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) ry .054(1.35) .045(1.15) Mechanical data .004(0.10)MIN. 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" 0.031(0.8) Typ. ina Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .096(2.45) .078(2.00) Pr eli m Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code .056(1.40) VRRM 12 20 13 30 14 40 15 50 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range .010(0.25) 16 .003(0.08) 18 10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Recurrent Peak Reverse Voltage .047(1.20) 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.012(0.3) Typ. 60 80 100 115 150 120 200 Vol 35 42 56 70 105 140 Vol 50 60 80 100 150 200 Vol 1.0 30 40 120 -55 to +125 Am Am ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage IR .016(0.40) .008(0.20) @T A=125℃ NOTES: .043(1.10) .032(0.80) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Forward Voltage at 1.0A DC 0.50 0.70 0.85 0.9 0.5 0.92 Vol mAm 10 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 Rev.D WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.