WILLAS FM120-M+ DTA114TCATHRU PNP Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Features • Low power loss, high efficiency. SOT-23 0.146(3.7) 0.130(3.3) Pb-Free package is available current capability, low forward voltage drop. • High High surge capability. • RoHS product for packing code suffix ”G” • Guardring for overvoltage protection. • Ultra high-speed switching. Epoxy meets UL 94 V-0 flammability rating • Silicon epitaxial planar chip, metal silicon junction. Moisure• Sensitivity Level 1 Lead-free parts meet environmental standards of Built-in bias resistors enable MIL-STD-19500 /228 the configuration of an inverter circuit without •connecting external input resistors RoHS product for packing code suffix "G"(see equivalent circuit) The bias Halogen resistors consist resistors with complete free productof forthin-film packing code suffix "H" isolationMechanical to allow negativedata biasing of the input. They also have the advantage of almost completely eliminating parasitic effects • Epoxy : UL94-V0 rated flame retardant Only the on/off conditions need to be set for operation, making Molded plastic, SOD-123H • Case :easy device design , • Terminals :Plated terminals, solderable per MIL-STD-750 • • x x x .080(2.04) .070(1.78) 0.031(0.8) Typ. Method 2026 VEBO IC RATINGS AND phase half wave, 60Hz, resistiveTJof inductive -55~150 load. JunctionSingle Temperature Range For capacitive load, derate current by 20% Storage Temperature Range TSTG -55~150 к FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH .008(0.20) Marking Code Maximum Recurrent Peak Reverse Voltage SymMaximum DC Blocking Parameter Voltage mW к Electrical Characteristics Maximum RMS Voltage .006(0.15)MIN. V V V mA CHARACTERISTICS Collector Dissipation 200 C Ratings at 25℃ ambient temperature P unless otherwise specified. RATINGS Dimensions in inches and (millimeters) Unit -50 -50 -5 -100 ELECTRICAL 0.031(0.8) Typ. .110(2.80) Emitter-Base voltage Collector Current-Continuous MAXIMUM Value 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) Absolute Maximum Ratings • Polarity : Indicated by cathode band Parameter Symbol Mounting Position : Any • Collector-Base Voltage VCBO Collector-Emitter Voltage : Approximated 0.011 VCEOgram • Weight .122(3.10) .106(2.70) .063(1.60) .047(1.20) Halogen free product for packing code suffix “H” 0.012(0.3) Typ. .083(2.10) • Min VRRM 12 20 13 30 14 40 15 50 16 60 18 .003(0.08) 10 80 100 115 150 120 200 VRMS 14 21 28 35 42 56 105 140 Typ Max Unit 70 .055(1.40) .035(0.89) 20 30 40 50 60 80 100 150 200 VDC .004(0.10)MAX. Collector-Base Breakdown Voltage -50 ----V V(BR)CBO =0) (IC=-50uA, Maximum AverageIEForward Rectified Current IO 1.0 Collector-Emitter Breakdown Voltage -- -50 --V V(BR)CEO IB=0) (IC=-1mA, Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Emitter-Base .020(0.50) superimposed on ratedBreakdown load (JEDECVoltage method) -5 ----V V(BR)EBO (IE=-50uA, IC=0) .012(0.30) 40 TypicalCollector Thermal Resistance (Note 2) RΘJA Cut-off Current -----0.5 uA ICBO 120 IE=0) Typical(V Junction Capacitance (Note 1) CJ CB=-50V, Dimensions in inches-55 andto (millimeters) Emitter Cut-off Current -55 to +125 +150 Operating Temperature Range T J -----0.5 uA IEBO (VEB=-4V, IC=0) - 65 to +175 Storage Temperature Range TSTG DC Current Gain 100 250 600 --h FE (VCE=-5V, IC=-1mA) Suggested Solder Collector-Emitter Saturation Voltage CHARACTERISTICS --- SYMBOL --- FM120-MH -0.3 FM130-MH V FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VCE(sat) =-10mA, I =-1mA) (I Pad Layout C B 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 13 K¡ 7 10 R1 Input Resistor .031 0.5 Maximum Average Reverse Current at @T A=25℃ Transition Frequency IR .800 --250 --MHz fT 10 Rated DC =-10V, IVoltage (VCEBlocking C=-5mA, f=100MHz)@T A=125℃ NOTES: .035 .900 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .079 2.000 *Marking: 94 2- Thermal Resistance From Junction to Ambient inches mm .037 .950 .037 .950 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA114TCA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage 14 40 15 50 16 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA114TCATHRU PNP Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ Features Pb Free Product PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) forward voltage drop. • High current capability,(1)low(2) G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability. • High DTA114TCA–T for overvoltage protection. • Guardring Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. A Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A use of any product or circuit. superimposed on rated load (JEDEC method) ℃ 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 Maximumor indirectly cause injury or threaten a life without expressed written approval Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ IR m of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . Storage Temperature Range 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.