WILLAS FM120-M+ BC:$LT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features NPN Silicon process design, excellent power dissipation offers • Batch better reverse leakage current and thermal resistance. Featrues SOD-123H • Low profile surface mounted application in order to We declare that the material optimize board space. of product compliance with RoHS requirements. efficiency. • Low power loss, high Pb-Free package is available • High current capability, low forward voltage drop. RoHS product for packing code suffix ”G” • High surge capability. Halogen free product for packing code suffix “H” for overvoltage protection. • Guardring Moisture Sensitivity Level 1 • Ultra high-speed switching. epitaxial planar chip, metal silicon junction. • SiliconRATINGS MAXIMUM • Lead-free parts meet environmental standards of MIL-STD-19500 /228 Rating Symbol Value • RoHS product for packing code suffix "G" Collector–Emitter Voltagefor packing V CEO Halogen free product code suffix "H"32 Collector–Base Voltagedata Mechanical V CBO 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Unit Vdc SOT–23 60 Vdc • Epoxy : UL94-V0 Emitter–Base Voltage rated flameVretardant EBO 5.0 Vdc : Molded SOD-123H • Case Current Collector —plastic, Continuous IC 800 mAdc , 0.040(1.0) 0.024(0.6) ry 3 COLLECTOR 0.031(0.8) Typ. 0.031(0.8) Typ. • Terminals :Plated terminals, solderable per MIL-STD-750 THERMAL CHARACTERISTICS 1 BASE Method 2026 im ina Pr el Characteristic Symbol Max Unit Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band Total Device Dissipation FR– 5 Board, (1) 2 • Mounting Position : Any PD 225 mW EMITTER TA = 25°C • Weight : Approximated 0.011 gram 1.8 mW/°C Derate above 25°C Thermal Resistance, Junction to Ambient RθJA 556 °C/W MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Total Device Dissipation 300 mW PD Ratings at 25℃ ambient temperature unless otherwise specified. Alumina Substrate, (2) TA = 25°C Single phase half wave, 60Hz, resistive of inductive load. 2.4 mW/°C Derate above 25°C For capacitive load, derate current by 20% Thermal Resistance, Junction to Ambient RθJA 417 °C/W FM130-MH FM140-MH°C FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL RATINGS Junction and Storage Temperature TJ ,FM120-MH Tstg –55 to +150 Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM DEVICE MARKING Maximum RMS Voltage BCW65ALT1 EA Maximum DC Blocking=Voltage VRMS 14 21 28 35 42 56 70 105 140 VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current (T = 25°CIunless O ELECTRICAL CHARACTERISTICS otherwise noted.) A Peak Forward Surge Current 8.3 ms single half sine-wave Characteristic Symbol IFSM Min Typ 1.0 30 Max superimposed on rated load (JEDEC method) OFF CHARACTERISTICS Breakdown TypicalCollector–Emitter Junction Capacitance (Note 1) Voltage Operating (IC =Temperature 10mAdc, I BRange =0) CJ V (BR)CEO TJ Storage Temperature Range Collector–Emitter Breakdown Voltage (IC = 10 µAdc, V EB = 0 ) CHARACTERISTICS V Maximum Reverse (I E=Average 10 µAdc, I C = 0)Current at @T A=25℃ Rated DC Blocking Voltage Collector Cutoff Current -55 to +125 — — @T A=125℃ 60 — — 40 120 Vdc -55 to +150 - 65 to +175 Vdc SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF (BR)EBO IR 0.50 5.0 — 0.70 — (VCE = 32 Vdc, IE = 0 , TA = 150°C) 2- Thermal Resistance From Junction to Ambient 0.85 0.5 0.9 0.92 Vdc 10 I CES NOTES:(VCE = 32 Vdc, IE = 0 ) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 32 TSTG V (BR)CES Maximum Forward Voltage at 1.0AVoltage DC Emitter–Base Breakdown RΘJA Typical Thermal Resistance (Note 2) Unit — — 20 nAdc — — 20 µAdc — — 20 nAdc Emitter Cutoff Current (V EB= 4.0 Vdc, I C = 0) I EBO 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BC:$LT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H surface mounted application orderotherwise to • Low profile ELECTRICAL CHARACTERISTICS (TA = 25°C in unless noted) (Continued) optimize boardCharacteristic space. Symbol Min • Low power loss, high efficiency. ON CHARACTERISTICS • High current capability, low forward voltage drop. DC Current hFE surge Gain capability. • High ( I = 100 µAdc, V = 10 Vdc ) C CE • Guardring for overvoltage protection. ( IC= 10 mAdc, VCE switching. = 1.0 Vdc ) high-speed • Ultra ( IC= 100epitaxial mAdc, Vplanar Vdc )metal silicon junction. CE = 1.0chip, • Silicon ( IC= 500 mAdc, Vdc ) partsVmeet environmental standards of • Lead-free CE = 2.0 MIL-STD-19500 /228 Collector–Emitter Saturation Voltage Unit 0.012(0.3) Typ. — 35 75 100 35 — — — — — 220 250 — — — 0.7 0.3 — — — — 2.0 0.071(1.8) 0.056(1.4) Vdc Halogen free product for packing code suffix "H" ( IC = 100 mAdc, IB = 10 mAdc ) Mechanical data Base–Emitter Saturation Voltage V Vdc0.040(1.0) BE(sat) fT (I C = 20mAdc, V CE =2026 10 Vdc, f = 100 MHz) Method 0.031(0.8) Typ. 100 — 0.031(0.8) Typ. — MHz C obo — Dimensions in inches and (millimeters) — 12 pF C ibo — — 80 pF — — CHARACTERISTICS 10 dB im ina Output Capacitance • Polarity : Indicated by cathode band (V CB= 10 Vdc, I E = 0, f = 1.0 MHz) • Mounting Position : Any Input Capacitance • Weight : Approximated 0.011 gram (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 0.024(0.6) ry : UL94-V0 flame) retardant • Epoxy ( IC = 500 mAdc, IB rated = 50 mAdc SOD-123H • Case : Molded plastic, SMSMALL–SIGNAL CHARACTERISTICS , Current–Gain — Bandwidth Product • Terminals :Plated terminals, solderable per MIL-STD-750 C Max 0.146(3.7) 0.130(3.3) V CE(sat) product for packing code suffix "G" • RoHS ( IC = 500 mAdc, IB = 50 mAdc ) EB Typ Noise Figure NF MAXIMUM RATINGS AND ELECTRICAL (V CE = 5.0 Vdc, I C = 0.2 mAdc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) Ratings at 25℃ ambient temperature unless otherwise specified. SWITCHING CHARACTERISTICS Pr el Single phase half wave, 60Hz, resistive of inductive load. Turn–On Time — — 100 ns t on For capacitive load, derate current by 20% (I B1= I B2= 15 mAdc) FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH RATINGS Turn–Off Time — — 400 ns t off Marking Code 12 13 14 15 16 18 10 115 120 (I C= 150 mAdc, R L = 150 Ω ) 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM Ordering Information Maximum RMS Voltage 14 21 28 35 42 56 70 105 140 20 VDC Device Marking Shipping Maximum Average Forward Rectified Current IO BCW65ALT1 EA 3000/Tape&Reel Peak Forward Surge Current 8.3 ms single half sine-wave IFSM 30 40 50 60 80 100 150 200 VRMS Maximum DC Blocking Voltage 1.0 30 superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BC:$LT1THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. SOT-23 • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. standards of • Lead-free parts meet environmental.122(3.10) 0.146(3.7) 0.130(3.3) .006(0.15)MIN. .063(1.60) .047(1.20) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .106(2.70) Halogen free product for packing code suffix "H" Mechanical data 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) .110(2.80) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. im ina Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .008(0.20) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .080(2.04) .070(1.78) RATINGS .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Pr el Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage 14 40 15 50 16 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO IFSM .004(0.10)MAX. Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range CHARACTERISTICS .020(0.50) TSTG .012(0.30) Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 40 120 -55 to +125 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Average Reverse Current at @T A=25℃ 1.0 30 .055(1.40) .035(0.89) 0.031(0.8) Typ. .083(2.10) ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.012(0.3) Typ. IR 0.50 0.70 0.85 0.9 0.92 0.5 @T A=125℃ Dimensions in inches and (millimeters) 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BC:$LT1THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ Pb Free Product PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) • High current capability, low (1) forward voltage drop. BCW65ALT1 G ‐WS Tape&Reel: 3 Kpcs/Reel capability. • High surge Guardring for overvoltage protection. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) ina ry 0.012(0.3) Typ. 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** Pr el im WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS and do vary in different applications and actual performance may vary over time. V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or A Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A on rated load (JEDEC method) superimposed ℃ 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 life‐saving implant or other applications intended for life‐sustaining or other related -55 to +150 Operating Temperature Range TJ - 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR m such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.