WILLAS FM120-M+ DTA123JCA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. for overvoltage protection. • Guardring Epitaxial Planar Die Construction Ultra high-speed switching. • Complementary NPN Types Available epitaxial planar chip, metal silicon junction. • Silicon Built-In Biasing Resistors • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) SOT-23 Features .122(3.10) .106(2.70) .063(1.60) .047(1.20) x x x • 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Pb-FreeMIL-STD-19500 package is available /228 RoHS product for packing code suffix”G” "G" • RoHS product for packing code suffix Halogen free product for packing code suffix "H" Halogen free product for packing code suffix “H” data EpoxyMechanical meets UL 94 V-0 flammability rating : UL94-V0 rated • Epoxy Moisure Sensitivity Level 1 flame retardant • Case : Molded plastic, SOD-123H , Absolute•maximum ratings @ 25к Terminals :Plated terminals, solderable per MIL-STD-750 • • 0.040(1.0) 0.024(0.6) .080(2.04) .070(1.78) 0.031(0.8) Typ. .006(0.15)MIN. 0.031(0.8) Typ. .110(2.80) Single phase half wave, 60Hz, resistive of inductive load. Electrical Characteristics @ 25к current by 20% For capacitive load, derate Symbol Parameter Min Typ Max Unit .008(0.20) 0.5 SYMBOL --- FM130-MH ---FM120-MH V FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VI(off) Input voltage RATINGS (VCC=5V, IO=100A) .003(0.08) ----- 12 1.1 13 V VMarking (VO=0.3V, IO=5mA) I(on) Code 14 15 16 18 10 115 120 VO(on) Output voltage (IO=5mA,Ii=0.25mA) --0.1 20 0.3 30 V 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM II Input current (VI=5V) ----3.6 mA 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS IO(off) Output current (VCC=50V, VI=0) ----0.5 A .004(0.10)MAX. GI DC (VO=5V, IO=10mA) 80VDC --- 20 --Maximum DC current Blockinggain Voltage 30 40 50 60 80 100 150 200 R1 Input resistance 1.54 2.2 2.86 K¡ Maximum Average Forward Rectified Current IO 1.0 R2/R1 Resistance ratio 17 21 26 Transition frequency .020(0.50) Peak fT Forward Surge Current 8.3 ms single half sine-wave --- IFSM 250 --MHz 30 (VO=10V, IO=5mA, f=100MHz) .012(0.30) .055(1.40) .035(0.89) .083(2.10) Method 2026 Symbol Parameter Min Typ Max Unit VCC Supply voltage --50 --V Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band VIN Input voltage -5 --+12 V Mounting Position : Any • Power Pd dissipation --200 --mW Tj --150 --ć • Junction Weight :temperature Approximated 0.011 gram Tstg Storage temperature -55 --150 ć IO 100 Output current mA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS IC(MAX) 100 Ratings at 25℃ ambient temperature unless otherwise specified. superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 40 Dimensions in inches and (millimeters) 120 -55 to +150 -55 to +125 - 65 to +175 TSTG *Marking: E32 CHARACTERISTICS Suggested Solder Pad Layout SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 .031 .800 0.9 0.92 0.5 10 .035 .900 NOTES: .079 2.000 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. inches mm 2- Thermal Resistance From Junction to Ambient .037 .950 .037 .950 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA123JCA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 14 40 15 50 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS PNP Digital Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features FM120-M+ DTA123JCATHRU FM1200-M+ Pb Free Product Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) Device PN Packing high efficiency. • Low power loss, 0.130(3.3) (2) low forward voltage drop. • High current capability, (1) DTA123JCA –T G ‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability. Note: (1) Packing code, Tape & Reel Packing for overvoltage protection. • Guardring • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Polarity : Indicated by cathode band •• Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20% For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Vo VRRM Vo 14 21 28 35 42 56 70 105 140 Maximumwhich may be included on WILLAS data sheets and/ or specifications can RMS Voltage VRMS Vo Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Am Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 Am use of any product or circuit. IFSM superimposed on rated load (JEDEC method) ℃ 40 Typical Thermal Resistance (Note 2) RΘJA P 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG life‐saving implant or other applications intended for life‐sustaining or other related ℃ applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Vo 0.9 Maximumor indirectly cause injury or threaten a life without expressed written approval Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ IR mA of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.