WILLAS DTC123JCA

WILLAS
FM120-M+
DTC123JCA THRU
NPN Digital Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
SOT-23
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
Planar Die Construction
• Epitaxial
high-speed switching.
• Ultra
NPN planar
Typeschip,
Available
• Complementary
metal silicon junction.
• Silicon epitaxial
• Built-In
Biasing
Resistors
• Lead-free parts meet environmental standards of
• Pb-Free
package is available
MIL-STD-19500
/228
RoHS product for packing code suffix "G"
•
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix "H"
Halogen
free product for
packing code suffix “H”
Mechanical
data
• Epoxy meets UL 94 V-0 flammability rating
: UL94-V0
rated
• Epoxy
• Moisure
Sensitivity
Level
1 flame retardant
• Case : Molded plastic, SOD-123H
,
Terminals :Plated
terminals,
solderable per MIL-STD-750
Absolute• maximum
ratings
@ 25к
0.146(3.7)
0.130(3.3)
.063(1.60)
.047(1.20)
Features
0.071(1.8)
0.056(1.4)
.080(2.04)
.070(1.78)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.006(0.15)MIN.
0.031(0.8) Typ.
0.012(0.3) Typ.
.122(3.10)
.106(2.70)
.110(2.80)
Single phase half wave, 60Hz, resistive of inductive load.
Electrical
Characteristics @ 25 20%
For capacitive load, derate current by к
Symbol
Parameter
.008(0.20)
.003(0.08)
Min
Typ
Max
Unit
SYMBOL---FM120-MH
0.5
Input voltage RATINGS
(VCC=5V, IO=100­A)
VI(off)
--- FM130-MH
V FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
--1.1
VMarking
=0.3V,
I
=5mA)
(V
--I(on)
O
O
Code
12
13 V
14
15
16
18
10
115
120
VMaximum
Output
voltage
(I
=5mA,I
=0.25mA)
--0.1
0.3
O(on)
O
i
20
30 V
40
50
60
80
100
150
200
Recurrent Peak Reverse Voltage
VRRM
.004(0.10)MAX.
II
Input current (VI=5V)
----3.6
mA
14
21
28
35
42
56
70
105
140
Maximum
RMS
Voltage
V
RMS
IO(off)
Output current (VCC=50V, VI=0)
----0.5
­A
Maximum
DC
Voltage
40
50
60
80
100
150
200
GI
DC Blocking
current gain
(VO=5V, IO=10mA)
80VDC --- 20 --- 30
R
Input
resistance
1.54
2.2
2.86
K
1
¡
Maximum Average Forward Rectified Current
IO
1.0
.020(0.50)
R2/R1
Resistance ratio
17 21
26
.012(0.30)
Transition
frequency
Peak
Forward
Surge
Current
8.3
ms
single
half
sine-wave
fT
---IFSM 250
--MHz
30
(VO=10V, IO=5mA, f=100MHz)
.055(1.40)
.035(0.89)
.083(2.10)
Method
2026
Symbol
Parameter
Min
Typ
Max
Unit
VCC
Supply voltage
50
--V
Dimensions in inches and (millimeters)
• Polarity
: Indicated by cathode band --VIN
Input voltage
-5
--+12
V
Position : Any
• Mounting
Pd
Power dissipation
--200
--mW
Tj
Junction
temperature
--150
--• Weight : Approximated 0.011 gram
ć
Tstg
Storage temperature
-55
--150
ć
IO
100
RATINGS AND ELECTRICAL
CHARACTERISTICS
Output MAXIMUM
current
mA
IC(MAX)
100
Ratings at 25℃ ambient temperature unless otherwise specified.
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
Dimensions
40 in inches and (millimeters)
120
-55 to +150
-55 to +125
- 65 to +175 Solder
Suggested
Pad Layout
*Marking:TSTG
E42
CHARACTERISTICS
FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
.031
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.9
0.85
.800
0.92
0.5
.035
.900
10
.079
2.000
NOTES:
inches
mm
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.037
.950
.037
.950
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC123JCA THRU
NPN Digital Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Features
100
Typical Characteristics
Package outline
ON Characteristics
OFF Characteristics
• Batch process design, excellent power dissipation offers
10
better reverse leakage current and thermal
VOresistance.
=0.3V
optimize board space.
INPUT VOLTAGE
a
1
•
0.3
MIL-STD-19500 /228
Ta=100℃
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
3
(mA)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1
I0
VI(ON)
(V)
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
10
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
3
• Silicon epitaxial planar chip, metal silicon junction.
standards of
• Lead-free parts meet environmental
T =25℃
OUTPUT CURRENT
30
VCC=5V
SOD-123H
• Low profile surface mounted application in order to
0.071(1.8)
0.056(1.4)
Ta=100℃
0.3
Ta=25℃
0.1
0.03
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
1
10
100
30
3
: Molded plastic,
SOD-123H
• Case 0.3
,
OUTPUT CURRENT I
(mA)
• Terminals :Plated
terminals, solderable per MIL-STD-750
0.1
0.1
0.01
0.2
0.4
0.031(0.8) Typ.
0.6
INPUT VOLTAGE
O
0.8
VI(OFF)
1.0
0.031(0.8) Typ.
(V)
Method 2026
• Polarity : Indicated
by cathode
VO(ON)
—— IOband
1000 • Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
GI
——
IO
1000
IO/II=20
VO=5V
300
100
RATINGS
Maximum Recurrent Peak Reverse Voltage
Ta=25℃
VRRM
12
20
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Maximum Average Forward Rectified Current
IO
IFSM
30
Maximum
RMS Voltage
10
1
10 half sine-wave
30
3
Peak Forward
Surge Current
8.3 ms single
OUTPUT
CURRENT
superimposed on rated load
(JEDEC
method) IO (mA)
Storage Temperature Range
GI
30
18
80
10
100
115
150
120
200
28
35
42
56
70
105
140
40
50
60
80
100
150
200
0.3
1.0
3
30
1
-55 to +125
PD 10
IO
30
100
(mA)
40
120
—— Ta
-55 to +150
- 65 to +175
400
350
(mW)
IR
@T A=125℃
PD
(pF)
16
60
OUTPUT CURRENT
VF
CO
OUTPUT CAPACITANCE
15
50
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Average Reverse Current at @T A=25℃
Rated DC
Blocking Voltage
6
3
1
0.1
Ta=25℃
Maximum Forward Voltage at 1.0A DC
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
21
TSTG
f=1MHz
CHARACTERISTICS
14
40
10
TJ
30
100
CJ
VR
10
8
Ta=25℃
13
30
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature RangeCO ——
100
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Ta=100℃
Marking Code
Ta=100℃
POWER DISSIPATION
OUTPUT VOLTAGE
VO(ON)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
DC CURRENT GAIN
(mV)
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
4
2- Thermal Resistance From Junction to Ambient
2
0.50
0.70
300
0.92
0.5
10
250
200
0.9
0.85
DTC123JCA
150
100
50
0
0
2012-06
2012-0
4
8
12
REVERSE BIAS VOLTAGE
16
VR
(V)
20
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.