WILLAS FM120-M+ DTA143ECATHRU PNP Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. package is available • Pb-Free • Guardring for overvoltage protection. RoHS product for packing code suffix ”G” high-speed switching. • Ultra Silicon epitaxial planar chip, metal silicon junction. • Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of Sensitivity Level • Moisure MIL-STD-19500 /228 1 • Epoxy meets UL for 94 packing V-0 flammability rating product code suffix "G" • RoHS • Built-inHalogen bias resistors enable the configuration free product for packing code suffix "H" of an inverter circuit without connecting external Mechanical data input resistors • The bias resistors consist thin-film resistors with complete flame retardant • Epoxy : UL94-V0 ratedof isolation to allow negative biasing of the input. They also have the SOD-123H • Case :ofMolded advantage almostplastic, completely eliminating parasitic effects. , Terminals terminals, peroperation, MIL-STD-750 • Only•the on/off :Plated conditions need solderable to be set for making Method 2026 device design easy • Polarity : Indicated by cathode band • Mounting Position : Any Absolute maximum ratings @ 25к • Weight : Approximated 0.011 gram 0.146(3.7) 0.130(3.3) SOT-23 0.012(0.3) Typ. .122(3.10) 0.071(1.8) .106(2.70) 0.056(1.4) .063(1.60) .047(1.20) Features 0.040(1.0) 0.024(0.6) .080(2.04) .070(1.78) 0.031(0.8) Typ. .006(0.15)MIN. 0.031(0.8) Typ. Dimensions in inches and (millimeters) .110(2.80) .083(2.10) Symbol Parameter Min Typ Max Unit VCC Supply voltage ---50 --V MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS VIN Input voltage -30 --10 V -100 IO Ratings at Output 25℃ ambient current temperature unless otherwise --- specified. --mA IC(MAX) -100 Single phase half wave, 60Hz, resistive of inductive load. Pd Power dissipation --200 --mW load,temperature derate current by 20% Tj capacitive Junction --150 --ć For Tstg Storage temperature -55 --150FM130-MH ć FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH RATINGS .008(0.20) Marking Code 12 13 14 15 16 18 .003(0.08) 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM VRMS 14 21 28 Symbol Parameter Min Maximum DC Blocking Voltage VDC Typ 20 Max 30 Unit 40 ---0.5 VI(off) --V Input voltage (VCC=-5V, IO=-100A) Maximum Average Forward Rectified Current ---IO ---3.0 V VI(on) (VO=-0.3V, IO=-20mA) VO(on) Output voltage = (IO/II -10mA/-0.5mA -----0.3 V Peak Forward Surge Current 8.3 ms single half sine-wave IFSM --II = Input current (VI -5V) ---1.8 mA superimposed on rated load (JEDEC method) A IO(off) Output current (VCC= =-50V, VI 0) -----0.5 Typical Resistance 2) = RΘJA --GI Thermal DC current gain(Note (VO=-5V, IO -10mA) 30 --- K¡ R Input resistance 3.29 4.7 6.11 1 Typical Junction Capacitance (Note 1) CJ R /R Resistance ratio 0.8 1.0 1.2 -55 to +125 2 1 Operating Temperature Range TJ Transition frequency fT --250 --MHz Storage Temperature Range TSTG (Vo=-10V, Io=5mA, f=100MHz) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 35 42 50 60 .004(0.10)MAX. 1.0 30 56 70 105 140 80 100 150 200 .020(0.50) .012(0.30) 40 120 Dimensions in inches-55 andto(millimeters) +150 - 65 to +175 Suggested Solder SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Average Reverse Current at *Marking: 13 @T A=25℃ Rated DC Blocking Voltage @T A=125℃ NOTES: 0.50 Pad Layout 0.85 0.70 0.9 0.92 .031 0.5 .800 IR 10 .035 .900 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .055(1.40) .035(0.89) Electrical Characteristics @ 25к Maximum RMS Voltage .079 2.000 2- Thermal Resistance From Junction to Ambient inches mm .037 .950 .037 .950 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA143ECA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Typical Characteristics Package outline Features design, excellent power dissipation offers • Batch processON Characteristics INPUT VOLTAGE -3 -1 -0.3 VCC=-5V 0.146(3.7) 0.130(3.3) -3 (mA) VI(ON) -10 OFF Characteristics SOD-123H -10 0.012(0.3) Typ. -1 I0 (V) -30 better reverse leakage current and thermal resistance. order to • Low profile surface mounted application VinO=-0.3V optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal Ta=25℃silicon junction. • Lead-free parts meet environmental standards of Ta=100℃ MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" OUTPUT CURRENT -100 0.071(1.8) 0.056(1.4) Ta=100℃ -0.3 Ta=25℃ -0.1 Mechanical data -0.03 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant -0.1 • Case : Molded plastic, SOD-123H -0.1 -1 -10 -100 -0.3 -30 -3 , OUTPUT terminals, CURRENT I solderable (mA) • Terminals :Plated per MIL-STD-750 -0.01 -0.0 0.031(0.8) Typ. -0.4 -0.8 -1.2 INPUT VOLTAGE O -1.6 VI(OFF) 0.031(0.8) -2.0 Typ. (V) Method 2026 Dimensions in inches and (millimeters) VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 Ta=25℃ 10 3 Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave 1 -10 -3 superimposed on rated load (JEDEC method) I OUTPUT CURRENT Typical Thermal Resistance (Note 2) O (mA) -30 CHARACTERISTICS VF (pF) IR (mV) PD @T A=125℃ CO 120 200 28 35 42 56 70 105 140 50 60 80 100 150 200 -1 1.0 30 -10 -3 OUTPUT CURRENT 40 120 -100 -30 IO (mA) -55 to +150 P-D 65—— Ta to +175 400 NOTES: OUTPUT CAPACITANCE 115 150 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH 350 Maximum Average Reverse Current at @T A=25℃ 6 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 10 100 f=1MHz Ta=25℃ 10 Maximum Forward Voltage at 1.0A DC Rated 8DC Blocking Voltage 80 40 -30 -55 to +125 TSTG T18 =25℃ a 30 -10 (mW) 12 16 60 TJ VR 15 50 CJ —— 14 40 21 -200 RΘJA Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature RangeCO IO IFSM -100 13 30 POWER DISSIPATION -1 -0.3 Ta=100℃ FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH -100 Maximum Recurrent Peak Reverse Voltage -0.1 -300 VO(ON) GI DC CURRENT GAIN Ta=100℃ RATINGS 30 Marking Code IO/II=20 VO=-5V Ratings at 25℃ ambient temperature unless otherwise specified. Single 100 phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% IO MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 300 VO(ON) —— -1000 OUTPUT VOLTAGE 1000 • Polarity : Indicated by cathode band • Mounting Position GI : Any —— IO • Weight : Approximated 0.011 gram 2- Thermal Resistance From Junction to Ambient 4 0.50 0.70 0.92 10 250 200 0.9 0.85 0.5 300 DTA143ECA 150 100 2 50 0 -0 2012-06 2012-0 -4 -8 REVERSE VOLTAGE -12 VR -16 (V) -20 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS PNP Digital Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features FM120-M+ THRU DTA143ECA FM1200-M+ Pb Free Product Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss,Device PN Packing 0.130(3.3) voltage drop. • High current capability, low (1) forward (2) DTA143ECA –T G ‐WS Tape& Reel: 3 Kpcs/Reel capability. • High surge for overvoltage protection. • Guardring Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Vol VRRM Vol 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Vol Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Am Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Am use of any product or circuit. superimposed on rated load (JEDEC method) ℃/ 40 Typical Thermal RΘJA Resistance (Note 2) PF 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ - 65 to +175 TSTG ℃ life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Vol 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAm of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- MeasuredInc and its subsidiaries harmless against all claims, damages and expenditures at 1 MHZ and applied reverse voltage of 4.0 VDC. . Storage Temperature Range 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.