WILLAS FM120-M+ DTA143EUA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. package is available • Pb-Free for overvoltage protection. • Guardring Ultra high-speed switching. • RoHS product for packing code suffix ”G” • Silicon epitaxial planar chip, metal silicon junction. Halogen free product forenvironmental packing code suffix of “H” parts meet standards • Lead-free MIL-STD-19500 /228 • Epoxy meets UL 94 V-0 flammability rating product for packing • RoHS • Moisure Sensitivity Level 1 code suffix "G" free product for packing code suffix "H"of an inverter circuit • Built-in Halogen bias resistors enable the configuration Mechanical datainput resistors without connecting external • The bias resistors consist offlame thin-film resistors with complete : UL94-V0 rated retardant • Epoxy isolation to allow negative biasing of the input. They also have the • Case : Molded plastic, SOD-123H advantage of almost completely eliminating parasitic effects. , • Terminals :Plated terminals, MIL-STD-750 • Only the on/off conditions need tosolderable be set forper operation, making Method 2026 device design easy • Polarity : Indicated by cathode band Absolute maximum ratings @ 25к : Any • Mounting Position Symbol Parameter Min Typ Max Unit VCC Supply voltage ---50 --V • Weight : Approximated 0.011 gram 0.146(3.7) 0.130(3.3) Features OutputMAXIMUM current -30 --- 10 .004(0.10)MIN. .096(2.45) .078(2.00) 0.031(0.8) Typ. Electrical Characteristics RATINGS@ 25к 0.031(0.8) Typ. Dimensions in inches and (millimeters) .087(2.20) .070(1.80) V mW ć ć FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH .056(1.40) Symbol Parameter Min Marking Code VI(off) -0.5 Input voltage (VCC=-5V, IO=-100A) Maximum Recurrent Peak Reverse Voltage VRRM --VI(on) (VO=-0.3V, IO=-20mA) Maximum RMS Voltage VRMS V Output voltage = (IO/II -10mA/-0.5mA --O(on) II = Input currentVoltage (VI -5V) ---VDC Maximum DC Blocking IO(off) Output current (VCC= =-50V, VI 0) --Maximum Average Forward Rectified Current IO G DC current gain (V = I 30 I O=-5V, O -10mA) R Input resistance 3.29 1 Peak Forward Surge Current 8.3 ms single half sine-wave R2/R1 Resistance ratio 0.8IFSM superimposed on rated load (JEDEC method) Transition frequency fT --(Vo = -10V, Io =5mA, f=100MHz) Typical Thermal Resistance (Note 2) RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 0.040(1.0) 0.024(0.6) .010(0.25) .003(0.08) -100 RATINGS AND ELECTRICAL -----CHARACTERISTICS mA IC(MAX) -100 Ratings atPower 25℃ dissipation ambient temperature unless otherwise Pd --- specified. 200 --Tj Junction temperature --Single phase half wave, 60Hz, resistive of inductive --load. 150 T Storage temperature -55 --150 stg capacitive For load, derate current by 20% 0.071(1.8) 0.056(1.4) Typ ------------4.7 1.0 250 12 Max 13 Unit V 20 --- 30 V -3.0 14 -0.3 21 V 20 -1.8 30 mA A -0.5 --6.11 K¡ 1.2 --- MHz 14 40 15 50 .047(1.20) 18 16 60 80 10 100 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 .004(0.10)MAX. 1.0 30 .043(1.10) .032(0.80) Input voltage SOT-323 .054(1.35) .045(1.15) VIN IO 0.012(0.3) Typ. .016(0.40) 40 .008(0.20) 120 Dimensions in inches -55 andto(millimeters) +150 -55 to +125 - 65 to +175 TSTG CHARACTERISTICS *Marking: Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC 13 @T A=125℃ 0.50 0.70 Suggested0.85 Solder 0.5Pad Layout IR 0.70 10 0.9 0.92 mm NOTES: 0.90 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 1.90 0.65 0.65 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA143EUA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Typical Characteristics Features design, excellent power dissipation offers • Batch processON Characteristics INPUT VOLTAGE -3 -1 (mA) VI(ON) -10 -3 Mechanical data -0.3 VCC=-5V 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. -1 I0 (V) -30 OFF Characteristics SOD-123H -10 OUTPUT CURRENT better reverse leakage current and thermal resistance. order to • Low profile surface mounted application VinO=-0.3V optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal Ta=25℃ silicon junction. • Lead-free parts meet environmental standards of Ta=100℃ MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" -100 0.071(1.8) 0.056(1.4) Ta=100℃ -0.3 Ta=25℃ -0.1 -0.03 • Epoxy : UL94-V0 rated flame retardant -0.1 • Case : Molded plastic, SOD-123H -0.1 -1 -10 -100 -0.3 -30 -3 , OUTPUT CURRENT (mA) • Terminals :Plated terminals,I solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) -0.01 -0.0 0.031(0.8) Typ. -0.4 -0.8 -1.2 INPUT VOLTAGE O -1.6 VI(OFF) 0.031(0.8) -2.0 Typ. (V) Method 2026 • Polarity : Indicated by cathode band GI : —— Any IO • Mounting Position • Weight : Approximated 0.011 gram 1000 Dimensions in inches and (millimeters) VRRM 12 20 Maximum RMS Voltage VRMS 14 VDC 20 Ta=25℃ 10 Maximum DC Blocking Voltage 3 Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave 1 -10 -3 superimposed on rated load (JEDEC method)I OUTPUT CURRENT Typical Thermal Resistance (Note 2) O (mA) -30 12 —— VR CHARACTERISTICS (mV) VO(ON) 15 50 16 60 Ta18 =25℃ 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 -30 -1 1.0 30 -10 -3 OUTPUT CURRENT 40 120 TJ -55 to +125 TSTG 400 -100 -30 IO (mA) -55 to +150 PD- 65—— Ta to +175 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH 350 VF (pF) Maximum Average Reverse Current at @T A=25℃ IR PD @T A=125℃ CO 14 40 f=1MHz Ta=25℃ 10 POWER DISSIPATION OUTPUT CAPACITANCE 13 30 CJ Maximum Forward Voltage at 1.0A DC Rated8DC Blocking Voltage Ta=100℃ -10 -200 RΘJA Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature RangeCO IO IFSM -100 (mW) -1 -0.3 -300 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH -100 Maximum Recurrent Peak Reverse Voltage -0.1 OUTPUT VOLTAGE GI DC CURRENT GAIN Ta=100℃ RATINGS 30 Marking Code NOTES: 6 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. IO/II=20 VO=-5V Ratings at 25℃ ambient temperature unless otherwise specified. Single 100 phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% IO MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 300 VO(ON) —— -1000 2- Thermal Resistance From Junction to Ambient 4 0.50 0.70 0.92 10 250 200 0.9 0.85 0.5 300 DTA143EUA 150 100 2 50 0 -0 2012-06 2012-0 -4 -8 REVERSE VOLTAGE -12 VR -16 (V) -20 0 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 150 (℃ ) WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA143EUA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Features Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) loss, high efficiency. • Low power Device PN Packing 0.130(3.3) • High current capability, (1) low (2) forward voltage drop. DTA143EUA –T G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability. • High for overvoltage protection. • Guardring Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. • (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M RATINGS for any errors or inaccuracies. Data sheet specifications and its information 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM use of any product or circuit. superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ Marking Code - 65 to +175 Storage Temperature Range TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR 10 @T A=125℃ Ratedof WILLAS. Customers using or selling WILLAS components for use in DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . Maximum Forward Voltage at 1.0A DC 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.