WILLAS DTC124EE

WILLAS
FM120-M+
DTC124EE THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Features
•
better
reverse is
leakage
current and thermal resistance.
Pb-Free
package
available
• Low profile surface mounted application in order to
RoHS product
for packing
optimize board
space. code suffix ”G”
Low
power
loss,
•
Halogen free producthigh
for efficiency.
packing code suffix “H”
High
current
capability,
low forwardrating
voltage drop.
•
Epoxy meets UL 94 V-0 flammability
High
surge
capability.
•
Moisure Sensitivity Level 1
for overvoltage protection.
Built-in• Guardring
bias resistors
enable the configuration of an inverter circuit
Ultra high-speed switching.
•
without connecting external input resistors
• Silicon epitaxial planar chip, metal silicon junction.
The bias resistors consist of thin-film resistors with complete
• Lead-free parts meet environmental standards of
isolation to allow negative biasing of the input. They also have the
•
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.067(1.70)
.059(1.50)
.035(0.90)
.028(0.70)
•
•
•
SOT-523
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
advantage
almostforcompletely
packing codeeliminating
suffix "G" parasitic effects.
• RoHSofproduct
Only theHalogen
on/off free
conditions
need
to
setsuffix
for "H"
operation, making
product for packingbe
code
deviceMechanical
design easy
data
VCC
VIN
IO
IC(MAX)
Pd
Tj
Tstg
Supply voltage
Method 2026
Input voltage
• Polarity
: Indicated by cathode band
Output current
• Mounting Position : Any
Power dissipation
• Weight
Approximated 0.011 gram
Junction:temperature
Storage temperature
---10
50
--30
100
150
150
---
-------55
.043(1.10)
.035(0.90)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
--40
Unit
V
V
---
mA
----150
mW
ć
ć
0.031(0.8) Typ.
.069(1.75)
.057(1.45)
• Epoxy : UL94-V0 rated flame retardant
Case : Molded
plastic,@
SOD-123H
Absolute• maximum
ratings
25к
,
terminals, solderable
per MIL-STD-750
Symbol • Terminals :Plated
Parameter
Min
Typ
Max
.014(0.35)
.010(0.25)
.004(0.10)MIN.
•
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
40
120
-55 to +125
.006(0.15)
.035(0.90)
.028(0.70)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Electrical
Characteristics
@ 25к
For capacitive
load, derate current
by 20%
.008(0.20)
Symbol
Parameter
Min
Typ
Max
Unit
.004(0.10)
FM130-MH
FM140-MH
FM150-MH
FM160-MH
FM180-MH
FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH
RATINGS
--V
VI(off)
--0.5
Input voltage (VCC=5V, IO=100­A)
Marking
Code
14
15
16
18
10
115
120
----- 12 3.0 13 V
V
(VO=0.2V, IO=5mA)
I(on)
40
50
60
80
100
150
200
Recurrent
Peak (IReverse
Voltage
VMaximum
Output voltage
=
---VRRM 0.1 20 0.3 30 V
O(on)
O/II 10mA/0.5mA)
II =
Input Voltage
current (VI 5V)
---VRMS --- 14 0.36 21 mA
28
35
42
56
70
105
140
Maximum
RMS
­A
IO(off)
Output current (VCC
=
=50V, VI 0)
----0.5
.004(0.10)MAX.
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
V
DC
GI
DC current gain (VO=5V,
=
IO 5mA)
56
----R1
Input resistance
15.4IO 22
Maximum
Average
Forward Rectified Current
1.0
K¡
28.6
R /R
Resistance ratio
0.8 1.0
1.2
2
1
Peak Forward
Surge Current
8.3 ms single half sine-wave
Transition
frequency
FSM
30 .014(0.35)
I
fT
--250
--MHz
(VOon
=10V,
=5mA,
f=100MHz)
superimposed
ratedIOload
(JEDEC
method)
-55 to +150
Dimensions in inches and (millimeters)
- 65 to +175
TSTG
CHARACTERISTICS
*Marking:
Maximum Forward Voltage at 1.0A
DC
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
25
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.5
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC124EE THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Typical Characteristics
Package outline
Features
Characteristics
design, excellent power dissipation offers
• Batch process ON
INPUT VOLTAGE
VI(ON)
10
3
1
SOD-123H
3
(mA)
(V)
30
Mechanical data
0.3
OFF Characteristics
10
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Ta=100℃
1
I0
better reverse leakage current and thermal
resistance.
VO=0.2V
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
Ta=25℃metal silicon junction.
• Silicon epitaxial planar chip,
of
• Lead-free parts meet environmental
Ta=100standards
℃
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
OUTPUT CURRENT
100
0.071(1.8)
0.056(1.4)
0.3
Ta=25℃
0.1
0.03
0.040(1.0)
• Epoxy : UL94-V0 rated flame retardant
0.1
0.1• Case0.3
10
100
30
: Molded1plastic, 3SOD-123H
,
OUTPUT
CURRENT
I
(mA)
• Terminals :Plated terminals, solderable per MIL-STD-750
0.024(0.6)
V
=5V
CC
0.01
0.4
0.8
0.031(0.8) Typ.
1.2
1.6
INPUT VOLTAGE
O
VI(OFF)
2.0
0.031(0.8) Typ.
(V)
Method 2026
• Polarity : Indicated by cathode band
VO(ON) —— IO
: Any
• Mounting Position
• Weight : Approximated 0.011 gram
1000
Dimensions in inches and (millimeters)
GI
1000
IO/II=20
——
IO
VO=5V
100
RATINGS
Maximum Recurrent Peak Reverse Voltage Ta=25℃
VRRM
12
20
Maximum
RMS Voltage
30
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Maximum Average Forward Rectified Current
IO
IFSM
10
Peak Forward
Surge Current
8.3 ms single
half sine-wave
1
10
30
3
OUTPUT
CURRENT
superimposed on rated load
(JEDEC
method) IO (mA)
TSTG
CO
IR
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
OUTPUT CAPACITANCE
6
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
115
150
120
200
28
35
42
56
70
105
140
40
50
60
80
100
150
200
3
1.0
330
1
0.3
OUTPUT CURRENT
40
120
PD ——
10
5
IO
30
100
(mA)
-55 to +150
Ta
- 65 to +175
350
(mW)
(pF)
VF
Rated DC Blocking Voltage
10
100
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
8
Maximum
Forward Voltage at 1.0A DC
18
80
30
400
f=1MHz
Ta=25℃
CHARACTERISTICS
16
60
21
-55 to +125
PD
Temperature Range
15
50
TJ
VR
14
40
1
0.1
POWER DISSIPATION
——
13
30 10
CJ
Typical Junction Capacitance (Note 1)
10
Storage
Ta=25℃
100
RΘJA
Typical Thermal Resistance (Note 2)
Operating Temperature Range
CO
Ta=100℃
100
30
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH FM130-MH
Ta=100℃
Marking Code
GI
VO(ON)
OUTPUT VOLTAGE
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
DC CURRENT GAIN
(mV)
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
300
4
2- Thermal Resistance From Junction to Ambient
2
300
0.50
DTC124ESA
0.70
0.5
150
100
0.92
10
250
200
0.9
0.85
DTC124EUA/CA/KA
DTC124EE
DTC124EM
50
0
0
2012-06
2012-0
4
8
12
REVERSE BIAS VOLTAGE
16
VR
(V)
20
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.