WILLAS FM120-M+ DTC114YE THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Features better reverse leakage current and thermal resistance. Pb-Free package is available • Low profile surface mounted application in order to RoHS product for packing optimize board space. code suffix ”G” power loss, high efficiency.code suffix “H” • Low Halogen free product for packing High current capability, low forwardrating voltage drop. Epoxy• meets UL 94 V-0 flammability High surge capability. • Moisure Sensitivity Level 1 for overvoltage Built-in• Guardring bias resistors enable theprotection. configuration of an inverter circuit Ultra high-speed switching. • without connecting external input resistors epitaxial planar chip, metal silicon junction. • Silicon The bias resistors consist of thin-film resistors with complete meet environmental standards of • Lead-free isolation to allow parts negative biasing of the input. They also have the MIL-STD-19500 /228 advantage of almost completely suffix "G" parasitic effects. • RoHS product for packing codeeliminating Only theHalogen on/off free conditions need to setsuffix for "H" operation, making product for packingbe code deviceMechanical design easy data .043(1.10) .035(0.90) 0.031(0.8) Typ. • • • Weight : Approximated 0.011 gram Power dissipation Junction temperature StorageMAXIMUM temperature RATINGS AND 0.024(0.6) ry Min ---6 0.031(0.8) Typ. Typ Max Unit 50 --V Dimensions in inches and (millimeters) --40 V 70 ----mA 100 --150 --mW ć --150 --ELECTRICAL CHARACTERISTICS -55 --150 ć im ina Parameter Method 2026 Supply voltage Polarity : Indicated by cathode band Input voltage Mounting Position : Any Output current 0.056(1.4) .014(0.35) .010(0.25) 0.040(1.0) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , Absolute• maximum ratings @ 25к Terminals :Plated terminals, solderable per MIL-STD-750 Symbol VCC VIN IO IC(MAX) Pd Tj Tstg .067(1.70) .059(1.50) 0.071(1.8) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .008(0.20) FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH Pr el RATINGS Electrical Characteristics @ 25к Marking Code 12 13 Maximum Recurrent Peak Reverse Voltage VRRM Typ 20 Max 30Unit Symbol Parameter Min 0.3VRMS --- 14 --VMaximum Input voltage (VCC=5V, IO=100A) I(off) 21 V RMS Voltage --V VI(on) --(VO=0.3V, IO=1mA) 1.4 Maximum DC Blocking Voltage 20 30 VO(on) ---VDC 0.1 0.3 V Output voltage (I= O/II 5mA/0.25mA) II = Input current (VI 5V) --- IO --0.88 mA Maximum Average Forward Rectified Current I A Output current (VCC = =50V, VI 0) --- --0.5 O(off) Peak Current 8.3O=5V, ms = single half sine-wave 68 GI Forward DCSurge current gain (V IO 5mA) --IFSM --R1 Input 7.0 10 superimposed onresistance rated load (JEDEC method) K¡ 13 RTypical Resistance ratio (Note 2) 3.7RΘJA 4.7 5.7 2/R1 Thermal Resistance Transition frequency MHz fT --- CJ 250 --Typical Junction Capacitance (Note 1) (VO=10V, IO=5mA, f=100MHz) -55 to +125 Operating Temperature Range TJ Storage Temperature Range TSTG CHARACTERISTICS 15 50 .004(0.10) 18 10 16 60 80 100 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 .004(0.10)MAX. 1.0 30 .014(0.35) 40 .006(0.15) 120 -55 to +150 - 65 to +175 Dimensions in inches and (millimeters) Maximum Forward Voltage at 1.0A DC 14 40 .035(0.90) .028(0.70) • 0.012(0.3) Typ. .069(1.75) .057(1.45) • 0.146(3.7) 0.130(3.3) .035(0.90) .028(0.70) • • • SOD-123H SOT-523 .004(0.10)MIN. • SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage*Marking: @T 64 A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS NPN Digital Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features • Batch process design, excellent power dissipation offers FM120-M+ DTC114YE THRU FM1200-M+ Pb Free Product Package outline better reverse leakage current and thermal resistance. SOD-123H surface mounted application in order to • Low profileInformation: Ordering optimize board space. 0.146(3.7) Device PN Packing high efficiency. • Low power loss, 0.130(3.3) (1) (2) capability, low • High current DTC114YE –T G forward ‐WS voltage drop. Tape& Reel: 3 Kpcs/Reel • High surge capability. Note: (1) Packing code, Tape & Reel Packing for overvoltage protection. • Guardring high-speed switching. • Ultra (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) ina ry Mechanical data 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM which may be included on WILLAS data sheets and/ or specifications can V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 V DC and do vary in different applications and actual performance may vary over time. A Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A use of any product or circuit. superimposed on rated load (JEDEC method) ℃ 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Marking Code Pr el im WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratingsspecification herein, to make corrections, modifications, enhancements or other at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive load, derate current by 20% Operating Temperature Range TJ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 TSTG applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 or indirectly cause injury or threaten a life without expressed written approval VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ IR m of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures . 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Storage Temperature Range 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.