WILLAS FM120-M C1815 THRU FM1200- SOT-23 Plastic-Encap sulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Prod Package outline Features • Batch process design, excellent power dissipation offers SOD-123H SOT-23 better reverse leakage current and thermal resistance. TRANSISTOR (NPN ) profile surface mounted application in order to • Low FEATURES optimize board space. • Low power loss, high efficiency. Power dissipation • High current capability, low forward voltage drop. capability. • High surge Pb-Free package is available • Guardring for overvoltage protection. RoHS product for packing code suffix ”G” • Ultra high-speed switching. epitaxial planar chip,code metal suffix silicon junction. • Silicon Halogen free product for packing “H” Lead-free parts meet environmental standards of • Moisture Sensitivity Level 1 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1. BASE 0.071(1.8) 0.056(1.4) 2. EMITTER 3. COLLECTOR MIL-STD-19500 /228 MARKING : HF • RoHS product for packing code suffix "G" =25℃forunless MAXIMUM RATINGS (Taproduct Halogen free packing otherwise code suffix "H"noted) Mechanical data Symbol • Epoxy : UL94-V0 rated flame retardant Parameter Value : Molded plastic, Voltage SOD-123H • CaseCollector-Base , Collector-Emitter Voltage • Terminals :Plated terminals, solderable per MIL-STD-750 VCBO VCEO 0.031(0.8) Typ. Method 2026 Emitter-Base Voltage VEBO • Polarity : Indicated by cathode band Collector Current -Continuous • Mounting Position : Any Collector Power Dissipation • Weight : Approximated 0.011 gram IC PC MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Storage Temperature Tstg Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise For capacitive load, derate current by 20% Parameter RATINGS 60 V 50 V 5 V 0.031(0.8) Typ. Dimensions in inches and (millimeters) Junction Temperature Tj 0.040(1.0) Unit 0.024(0.6) 150 mA 200 mW 150 ℃ ℃ -55-150 specified) FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM120 SYMBOL FM120-MH Symbol Test conditions Min Typ Max Unit Marking Code 12 13 14 40 14 21 28 20 30 40 100uA, I30 V(BR)CBO 20 E 0 VRRM IC== Collector-base breakdown Maximum Recurrent Peakvoltage Reverse Voltage VRMS Maximum RMS Voltage V(BR)CEO Collector-emitter breakdown voltage Maximum DC Blocking Voltage VDC I= C= 0.1mA, IB 0 15 60 50 16 60 18 80 35 42 56 70 50 60 80 100 50 VCB=60V, IE 0 ICBO I= O Collector cut-off current Maximum Average Forward Rectified Current Peakcut-off Forwardcurrent Surge Current 8.3 ms single half sine-wave = VCE=50V, IB 0 ICEO IFSM Collector superimposed on rated load (JEDEC method) VEB= 5V, IC 0 IEBO R= ΘJA EmitterTypical cut-off current Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) hFE DC current gain Operating Temperature Range CJ TJ VCE= 6V, IC= 2mA -55 to +125 130 10 100 V 150 115 120 200 105 140 150 200 V 1.0 30 0.1 uA 0.1 uA 40 120 0.1 uA 400 -55 to +150 - 65 to +175 Storage Temperature Range Collector-emitter saturation voltage VCE(sat)TSTG IC=100mA, IB= 10mA Base-emitter saturation voltage CHARACTERISTICS =100mA, IB= 10mA VBE(sat) FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH1FM1100-MH V FM1150-MH FM1200 SYMBOLICFM120-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ fT Transition frequency Rated DC Blocking Voltage @T A=125℃ IR 0.50 VCE=10V, IC= 1mA, f=30MHz 0.70 0.25 V 0.9 0.85 0.5 80 10 0.9 MHz NOTES: CLASSIFICATION OF FE reverse voltage of 4.0 VDC. 1- Measured at 1 MHZ andhapplied Rank L H 130-200 200-400 2- Thermal Resistance From Junction to Ambient Range 2012-06 2012-0 WILLAS ELECTRONIC CO WILLAS ELECTRONIC CORP. WILLAS C1815 SOT-23 Plastic-Encap sulate Transistors FeaturesI —— C hFE 1000 —— IC design, excellent power dissipation offers • Batch process16uA COMMON EMITTER ℃ thermal resistance. Ta=25and better reverse leakage current optimize board space. 12uA COLLECTOR CURRENT IC • Low power loss, high efficiency. low forward voltage drop. • High current capability,10uA • High surge capability. 8uA • Guardring for overvoltage protection. • Ultra high-speed switching. 6uA • Silicon epitaxial planar chip, metal4uAsilicon junction. • Lead-free parts meet environmental standards of 3 2 1 MIL-STD-19500 /228 SOD-123H Ta=100℃ hFE • Low profile surface mounted application in order to 4 DC CURRENT GAIN (mA) 14uA Ta=25℃ 0.146(3.7) 0.130(3.3) 0 0 0.071(1.8) 0.056(1.4) IB=2uA COMMON EMITTER VCE= 6V Mechanical data Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram T =100 ℃ 100 100 150 10 COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 1 VCE (V) • Epoxy : UL94-V0 VCEsat rated —— flame IC retardant 2000 • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 500 a Ta=25℃ VBEsat —— IC Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. β=10 For10 capacitive load, derate current by 20% 1 10 COLLECTOR CURREMT RATINGS 100 IC 0.040(1.0) 0.024(0.6) IC 0.031(0.8) Typ. 0.031(0.8) Typ. 1000 Ta=25℃Dimensions in inches and (millimeters) Ta=100 ℃ 150 β=10 100 0.1 1 100 150 10 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM120 SYMBOL FM120-MH FM130-MH FM140-MH COLLECTOR CURREMT IC (mA) (mA) VRRM 12 20 COMMON EMITTER 100 Maximum RMS Voltage V = 6V 13 30 1000 14 40 15 f50 —— T 16 IC 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC (MHz) —— VBE Maximum Recurrent PeakIC Reverse Voltage 150 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO IFSM 10 T= a 10 0℃ COLLECTOR CURRENT Peak Forward Surge Current 8.3 ms single half sine-wave T= a 25 ℃ superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) 1 CJ Operating Temperature Range TJ Storage Temperature Range TSTG 1.0 30 fT TRANSITION FREQUENCY IC (mA) CE 100 -55 to +125 0 CHARACTERISTICS 600 300 -55 to +150 - 65 toCOMMON +175 EMITTER VCE=10V FM120-MH10FM130-MH FM140-MH1 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 SYMBOL 1200 0.1 10 100 900 VF VBE (mV) Maximum Average Reverse Current at @T A=25℃ Cob/Cib —— VCB/VEB @T A=125℃ Rated 50 DC Blocking Voltage NOTES: Ta=25 ℃ (pF) to Ambient CAPACITANCE C 2- Thermal Resistance COLLECTOR CURRENT 0.70 PC 250 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. FromCibJunction 0.50 IR f=1MHz IE=0/IC=0 10 Ta=25℃ COLLECTOR POWER DISSIPATION PC (mW) 0.1 BASE-EMMITER VOLTAGE Maximum Forward Voltage at 1.0A DC 40 120 (mA) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Marking Code 10 0.1 Halogen free product for packing code 2 4 6 8 suffix "H" 10 COLLECTOR-EMITTER VOLTAGE 0.012(0.3) Typ. 100 • RoHS product for packing code suffix "G" Pb Free Prod Typical Characteristics Package outline VCE THRU FM1200- 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE 5 FM120-M Cob —— IC Ta 0.9 0.85 (mA) 0.9 0.5 10 200 150 100 50 2012-06 0.1 0.1 WILLAS ELECTRONIC CO 0 1 REVERSE VOLTAGE 2012-0 10 V (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP. WILLAS FM120-M C1815 THRU FM1200-M SOT-23 Plastic-Encap sulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Prod Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-23 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" .122(3.10) .106(2.70) .063(1.60) .047(1.20) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Mechanical data 0.012(0.3) Typ. 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .110(2.80) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 Marking Code Maximum Recurrent Peak Reverse Voltage .080(2.04) Maximum RMS Voltage .070(1.78) Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) VRRM 12 20 13 30 VRMS 14 21 28 VDC 20 30 40 Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 18 10 .008(0.20) 115 150 120 200 35 42 140 60 56 70 .003(0.08) 105 50 150 200 CHARACTERISTICS 100 80 100 40 120 -55 to +125 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 VF Maximum Forward Voltage at 1.0A DC 80 1.0 30 TSTG .004(0.10)MAX. Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 16 60 15 50 IO IFSM RΘJA Typical Thermal Resistance (Note 2) 14 40 @T A=125℃ IR NOTES: .020(0.50) 2- Thermal Resistance From Junction to Ambient .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 0.70 0.85 0.9 0.5 .055(1.40) .035(0.89) .083(2.10) Dimensions in inches and (millimeters) 0.92 10 Dimensions in inches and (millimeters) 2012-06 2012-0 WILLAS ELECTRONIC CO Rev.D WILLAS ELECTRONIC CORP. WILLAS FM120-M C1815 THRU FM1200-M SOT-23 Plastic-Encap sulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Prod SOD-123+ PACKAGE Features Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Ordering Information: capability, low forward voltage drop. • High current • High surge capability. Device PN Packing • Guardring for overvoltage protection. (3) (1) (2) C1815 x ‐T switching. G ‐WS Tape&Reel: 3 Kpcs/Reel high-speed • Ultra Silicon epitaxial planar chip, metal silicon junction. • Note: (1) Packing code, Tape & Reel Packing • Lead-free parts meet environmental standards of MIL-STD-19500 /228 (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • RoHS product for packing code suffix "G" (3) Halogen CLASSIFICATION OF h RANKcode free product for FE packing suffix "H" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM contained are intended to provide a product description only. "Typical" parameters 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Maximum Average Forward Rectified Current IO 1.0 and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave WILLAS does not assume any liability arising out of the application or 30 IFSM superimposed on rated load (JEDEC method) use of any product or circuit. 40 Typical Thermal Resistance (Note 2) RΘJA Junction Capacitance (Note 1) 120 Typical CJ -55 to +125 -55 to +150 Operating Temperature Range TJ WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175 Storage Temperature Range TSTG life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 applications where a failure or malfunction of component or circuitry may directly 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CO WILLAS ELECTRONIC CORP.