JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encap sulate MOSFETS 2N7002X V(BR)DSS 60 V MOSFET( N-Channel ) ID RDS(on)MAX SOT-89-3L 5Ω@10V 7Ω@5V 115mA 1.GATE 11 2 2 3 3 2. DRAIN 3. SOURCE APPLICATION Load Switch for Portable Devices z DC/DC Converter FEA TURES z High density cell design for low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability z Equivalent Circuit MARKING MAXIMUM RATINGS (Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VDS Drain-Source Voltage 60 V VGS ID Gate -Source Voltage Drain Current 20 115 V mA PD Power Dissipation 500 mW TJ Junction Temperature 150 ℃ TSTG Storage Temperature -55~+150 ℃ RθJA Thermal Resistance from Junction to Ambient www.cj-elec.com 1 250 ℃/W G,Apr,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test conditions Min Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=250µA 60 Gate-threshold voltage* V(GS)th VDS=VGS, ID=250µA 1 lGSS VDS=0V, VGS= ± 20 V Gate-body leakage Zero gate voltage drain current IDSS Drain-source on-resistance* RDS(on) Forward tranconductance* g fs Drain-source on-voltage VDS(on) Diode forward voltage* VSD Turn-on time ** td(on) Turn-off time ** td(off) Input capacitance** Ciss Output capacitance ** Coss Reverse transfer capacitance ** Crss VDS=60V, VGS=0V Typ Max 2.5 nA 80 nA 5 VGS=5V, ID=50mA 7 VDD=25V,RL=50 Ω ,ID=500mA, VGEN=10V,RG=25 Ω 80 0.5 0.05 0.55 V ± 80 VGS=10V, ID=500mA VDS=10V, ID=200mA VGS=10V, ID=500mA VGS=5V, ID=50mA IS=115mA,VGS=0V Unit 500 3.75 0.375 1.2 20 40 Ω ms V V V ns 50 VDS=25V, VGS=0V,f=1MHz 25 pF 5 * Pulse Test: Pulse width ≤300µs,duty cycle≤2%. ** These parameters have no way to verify. www.cj-elec.com 2 G,Apr,2015 Typical Characteristics Transfer Characteristics Output Characteristics 1.0 1.4 Ta=25℃ VGS=10V,9V,8V,7V,6V Ta=25℃ VGS=5V Pulsed Pulsed 1.2 (A) ID 0.6 0.8 DRAIN CURRENT DRAIN CURRENT ID (A) 0.8 1.0 VGS=4V 0.6 0.4 0.4 0.2 VGS=3V 0.2 0.0 0.0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 0 5 RDS(ON) —— ID RDS(ON) —— 3 4 6 VGS (V) VGS 6 Ta=25℃ Pulsed Pulsed ( Ω) Ta=25℃ RDS(ON) ( Ω) 2 ON-RESISTANCE RDS(ON) ON-RESISTANCE 2 GATE TO SOURCE VOLTAGE (V) VGS=5V 1 VGS=10V 0 0.0 4 ID=500mA 2 ID=50mA 0 0.2 0.4 0.6 DRAIN CURRENT 0.8 ID 1.0 0 6 GATE TO SOURCE VOLTAGE (A) 12 VGS 18 (V) IS —— VSD 2 Ta=25℃ SOURCE CURRENT IS (A) 1 Pulsed 0.3 0.1 0.03 0.01 3E-3 1E-3 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE 1.2 1.4 VSD (V) 3 G,Apr,2015 SOT-89-3L Package Outline Dimensions Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 SOT-89-3L Suggested Pad Layout www.cj-elec.com 4 G,Apr,2015 SOT-89-3L Tape and Reel www.cj-elec.com 5 G,Apr,2015