WILLAS FM120-M 8550SxLT1THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Prod SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers SOT-23 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to TRANSISTORoptimize (PNP) board space. Low power loss, high efficiency. • FEATURES • High current capability, low forward voltage drop. z Pb-Free• High package is available surge capability. overvoltage • Guardring RoHS product for for packing codeprotection. suffix ”G” • Ultra high-speed switching. Halogen• Silicon free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. z Collector current: IC=0.5A parts meet environmental standards of • Lead-free /228 1 z MoistureMIL-STD-19500 Sensitivity Level • RoHS product for packing code suffix "G" MARKING : Halogen 2TY free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1. BASE 2. EMITTER 0.071(1.8) 0.056(1.4) 3. COLLECTOR Mechanical data MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) • Epoxy : UL94-V0 rated flame retardant Symbol• Case : Molded plastic, SOD-123HParameter , • Terminals :Plated terminals, Collector-Base Voltagesolderable per MIL-STD-750 VCBO 0.040(1.0) 0.024(0.6) Value 0.031(0.8) Typ. -40 V -25 V -5 V -0.5 A 0.3 W 150 ℃ -55-150 ℃ Method 2026 VCEO Collector-Emitter Voltage • Polarity : Indicated by cathode band Emitter-Base Voltage Position : Any • Mounting Collector Current0.011 -Continuous • Weight : Approximated gram VEBO IC PC Dimensions in inches and (millimeters) Collector Power Dissipation MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Tj Junction Temperature Ratings at 25℃ ambient temperature unless otherwise specified. Storage Single phase half wave, Temperature 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Tstg Unit 0.031(0.8) Typ. ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH RATINGS SYMBOL FM120-MH Marking Code Parameter Maximum Recurrent Peak Reverse Voltage 12 20 VRRM Symbol Maximum RMS Voltage VRMS Collector-base breakdown voltage Maximum DC Blocking Voltage VDC 14 V(BR)CBO 20 IO V(BR)CEO IFSM Maximum Average Forward Rectified Current Collector-emitter breakdown voltage Peak Forward Surge Current 8.3 ms single half sine-wave Emitter-base breakdown voltagemethod) superimposed on rated load (JEDEC V(BR)EBO CJ ICBO TJ Operating Temperature Range Collector current Storagecut-off Temperature Range TSTG 21 28 16 60 35 ICEO 18 10 Min 80 42 I30 C = -100μA, IE=0 40 50 -40 60 Max 100 56 70 80 100 IE= -100μA, IC=0 V CB= -40V, IE=0 -55 to +125 120 200 105 140 150 200 V -0.1 μA -55 to +150 - 65 to +175 VCE= -20V, IB=0 115 V -5 40 120 Unit 150 V 1.0 -25 30 IC =-1mA, IB=0 RΘJA Typical Thermal Resistance (Note 2) Collector Typicalcut-off Junction current Capacitance (Note 1) 13 14 15 30 Test conditions 40 50 FM1200 -0.1 μA CHARACTERISTICS Emitter cut-off current FM130-MH FM140-MH FM1150-MH FM1200SYMBOL IFM120-MH VEB= -3V, IC=0 FM150-MH FM160-MH FM180-MH FM1100-MH -0.1 μA EBO VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DCgain Blocking Voltage DC current @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Collector-emitter saturation voltage 2- Thermal Resistance From Junction to Ambient Base-emitter saturation voltage Transition frequency IR 0.50 0.70 0.9 0.85 0.5 120 0.92 hFE(1) VCE= -1V, IC= -50mA 400 hFE(2) VCE= -1V, IC= -500mA VCE(sat) IC=-500mA, IB= -50mA -0.6 V VBE(sat) IC=-500mA, IB= -50mA -1.2 V 10 fT VCE= -6V, IC= -20mA f=30MHz 50 150 MHz CLASSIFICATION OF hFE(1) Rank2012-06 Range 2012-0 L 120-200 H WILLAS ELECTRONIC CO 200-350 WILLAS ELECTRONIC CORP. WILLAS FM120-M THRU 8550SxLT1 FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Typical Characteristics • Batch process design, excellent power dissipation offers Features VCE IC —— current better reverse leakage and thermal resistance. application in order to • Low profile surface mounted -400uA COMMON -90 optimize board space. -80 hFE EMITTER Ta=100℃ -360uA T =25℃ • Low power loss, high efficiency. -70 -320uA voltage drop. • High current capability, low forward -280uA -60 • High surge capability. -240uA -50• Guardring for overvoltage protection. -200uA • Ultra high-speed switching. -40 silicon junction. • Silicon epitaxial planar chip, metal-160uA -30• Lead-free parts meet environmental standards of -120uA hFE DC CURRENT GAIN IC (mA) a COLLECTOR CURRENT IC SOD-123H —— 500 MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Ta=25℃ 100 0.071(1.8) 0.056(1.4) -80uA • RoHS product for packing code suffix "G" -20 IB=-40uA Halogen free product for packing code suffix "H" -10 Mechanical data COMMON EMITTER VCE=-1V -0 -0 -2 -4 10 -6 -8 -10 -12 -1 -10 V (V) UL94-V0 rated VOLTAGE flame retardant • Epoxy :COLLECTOR-EMITTER • Case : Molded plastic, SOD-123H VBEsat —— IC , -1200• Terminals :Plated terminals, solderable per MIL-STD-750 -500 -100 COLLECTOR CURRENT CE 0.031(0.8) Typ. VCEsat IC -500 0.040(1.0) 0.024(0.6) (mA) 0.031(0.8) Typ. IC —— a =1 00 ℃ Dimensions in inches and (millimeters) -100 T MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 100 ℃ a T a= Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% -100 COLLECTOR CURRENT IC -500 Maximum Recurrent Peak Reverse Voltage I —— V C -500 Maximum RMS Voltage BE (mA) Maximum DC Blocking Voltage IC T =2 5℃ a T =1 00 ℃ a COLLECTOR CURRENT Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) VRMS 14 VDC 20 IO IFSM Maximum Average Forward Rectified Current -100 VRRM 12 20 (mA) RΘJA Typical-10 Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range TSTG -1 -0 -600 Maximum Forward Voltage at 1.0A DC BASE-EMMITER VOLTAGE -900 Rated DC 50 Blocking Voltage —— 400 14 40 -100 COLLECTOR 15 CURRENT 16 21 28 50 fT —— 60 IC 35 42 30 40 50 IC -500 (mA) 18 10 100 115 150 120 200 56 70 105 140 80 100 150 200 80 60 1.0 30 100 40 120 -55 to +125 -55 to +150 - 65 toCOMMON +175 EMITTER VCE=-6V Ta=25℃ 10 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH VF VBE (mV) Maximum Average Reverse Current at @T A=25℃ Cob/Cib 13 30 -10 COMMON EMITTER VCE=-1V CHARACTERISTICS -300 -1 (MHz) Marking Code β=10 FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH -10 -10 fT -1 ℃ 25 T a= β=10 RATINGS -400 TRANSITION FREQUENCY COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any -800 2 5℃ T= • Weight : Approximated 0.011 gram -1 -1200 0.50 -10 COLLECTOR 0.70 CURRENT IR VCB/VEB @T A=125℃ PC 400 —— Ta IC 0.85 (mA) -100 0.9 0.5 0.92 10 COLLECTOR POWER DISSIPATION PC (mW) NOTES: 1- Measured at 1 MHZ and applied C reverse voltage of 4.0 VDC. C 10 Cob CAPACITANCE (pF) ib 2- Thermal Resistance From Junction to Ambient f=1MHz IE=0/IC=0 100 WILLAS ELECTRONIC COR 0 -1 REVERSE VOLTAGE 2012-0 200 Ta=25 ℃ 2012-06 1 -0.1 300 -10 V (V) -20 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 8550SxLT1 FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Outline Drawing SOT-23 • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .006(0.15)MIN. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data .063(1.60) .047(1.20) • Epoxy : UL94-V0 rated flame retardant .122(3.10) • Case : Molded plastic, SOD-123H , .106(2.70) • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 Maximum RMS Voltage VRMS 14 21 28 35 42 VDC 20 30 40 50 60 .080(2.04) Maximum Average Forward Rectified Current .070(1.78) Maximum DC Blocking Voltage .083(2.10) .110(2.80) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.012(0.3) Typ. Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO IFSM RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 10 100 80 100 .008(0.20) 56 70 1.0 30 18 80 .003(0.08) 40 120 -55 to +125 115 150 120 200 105 140 150 200 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS .004(0.10)MAX. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .020(0.50) .012(0.30) 2- Thermal Resistance From Junction to Ambient 2012-06 0.70 0.85 0.9 0.5 IR 0.50 10 Dimensions in inches and (millimeters) WILLAS ELECTRONIC COR Rev.D 2012-0 0.92 .055(1.40) .035(0.89) Maximum Forward Voltage at 1.0A DC WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 8550SxLT1 FM1200-M+ SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Features Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. SOD-123H 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Ordering Information: • High current capability, low forward voltage drop. • High surge capability. Device PN Packing • Guardring for overvoltage (2) (1)protection. 8550S x switching. LT1 G ‐WS Tape&Reel: 3 Kpcs/Reel • Ultra high-speed Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 (2) CLASSIFICATION OF h FE RANK /228 • RoHS product for packing code suffix "G" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM contained are intended to provide a product description only. "Typical" parameters V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. A Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A superimposed on rated load (JEDEC method) use of any product or circuit. ℃ 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175 Storage Temperature Range TSTG life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U applications where a failure or malfunction of component or circuitry may directly V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR m 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.