WILLAS FM120-M+ THRU MMBT3904TT1 FM1200-M+ General Purpose Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features NPNprocess Silicon design, excellent power dissipation offers • Batch better reverse leakage current and thermal resistance. SOD-123H FEATURE profile surface mounted application in order to • Low optimize board Circuit space.Design. ƽSimplifies highfor efficiency. • Lowƽpower RoHSloss, product packing code suffix "G" capability, low for forward voltage • High current Halogen free product packing code drop. suffix "H" • Highƽsurge capability. • Guardring for overvoltage protection. high-speed switching. • Ultra ORDERING INFORMATION epitaxial planar chip, metal silicon junction. • Silicon Device Marking Shipping • Lead-free parts meet environmental standards of MA MMBT3904TT1 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 3000/Tape&Reel Halogen free product for packing code suffix "H" Mechanical data MAXIMUM RATINGS SC-890.040(1.0) • Epoxy : UL94-V0 Rating rated flame retardant Symbol Value : Molded plastic, SOD-123H • Case Collector–Emitter Voltage V CEO 40 , • Terminals :Plated terminals, solderable per MIL-STD-750 Collector–Base Voltage V CBO Method 2026 Emitter–Base Voltage V Polarity : Indicated by cathode band EBO Collector Current: — Continuous IC Mounting Position Any • • • Weight : Approximated 0.011 gram THERMAL CHARACTERISTICS Characteristic Unit 0.024(0.6) Vdc 60 Vdc 6.0 Vdc 200 mAdc Symbol 0.031(0.8) Typ. 0.031(0.8) Typ. 3 COLLECTOR Dimensions in inches and 1 (millimeters) BASE Max 2 EMITTER Unit MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Total Device Dissipation FR– 4 Board, (1) PD 200 mW Ratings at 25℃ ambient temperature unless otherwise specified. TA = 25°C Single phase half wave, 60Hz, resistive of inductive load. Derate above 25°C 1.6 mW/°C For capacitive load, derate current by 20% Thermal Resistance, Junction to Ambient RθJA 600 °C/W FM150-MH SYMBOL FM120-MH RATINGS Total Device Dissipation PD FM130-MH FM140-MH 300 mWFM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code FR-4 Board(2), TA = 25°C 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts V RRM Derate above 25°C 2.4 mW/°C Volts 14 RθJA 21 28 35 42 56 70 105 140 Maximum RMSThermal Voltage Resistance, Junction to AmbientVRMS 400 °C/W Volts Maximum DC Blocking JunctionVoltage and Storage Temperature TJ , Tstg 30 –55 to 20 40+150 50 °C 60 80 100 150 200 VDC Maximum Average Forward Rectified Current DEVICE MARKING Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) MMBT3904TT1 = MA Typical Thermal Resistance (Note 2) IO IFSM 1.0 30 RΘJA ELECTRICAL CHARACTERISTICS (TA C = 25°C unless otherwise noted.) Typical Junction Capacitance (Note 1) J Operating Temperature Range Characteristic Storage Temperature Range OFF CHARACTERISTICS TJ TSTG -55 to +125 Min Symbol Amps Amps 40 120 Max Unit - 65 to +175 ℃/W PF -55 to +150 ℃ ℃ FM130-MH FM140-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT CHARACTERISTICS Collector–Emitter Breakdown Voltage(3)SYMBOL FM120-MH V (BR)CEO 40 FM150-MH—FM160-MHVdc Volts 0.9 0.92 VF 0.50 0.70 0.85 Maximum Forward at 1.0A DC 1.0 mAdc) (I C =Voltage Maximum Average Reverse Current at @TVoltage A=25℃ Collector–Base Breakdown Rated DC Blocking (I C = Voltage 10 µAdc) @T A=125℃ IR Emitter–Base Breakdown Voltage NOTES: 60 — 0.5 Vdc V (BR)EBO 6.0 — Vdc I BL — 50 nAdc I CEX — 50 nAdc 10 mAmps (I E = 10 µAdc) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Base Cutoff Current V (BR)CBO 2- Thermal Resistance From Junction to Ambient ( V CE= 30 Vdc, V EB = 3.0 Vdc, ) Collector Cutoff Current ( V CE = 30Vdc, V BE = 3.0Vdc ) 1. FR-4 Minimum Pad. 2. FR-4 1.0 x 1.0 Inch Pad. 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. 2012-06 2014-01 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT3904TT1 FM1200-M+ General Purpose Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued) to • Low profile surface mounted application(TinA =order optimize board space.Characteristic Symbol loss, high efficiency. • Low ON power CHARACTERISTICS (3) current capability, low forward voltage drop. • High DC Current Gain(1) capability. • High (Isurge C =0.1 mAdc, V CE =1.0 Vdc) formAdc, overvoltage protection. • Guardring (I C = 1.0 V CE = 1.0 Vdc) switching. • Ultra (Ihigh-speed C = 10 mAdc, V CE = 1.0 Vdc) • Silicon epitaxial planar chip, metal silicon junction. (I C = 50mAdc, V CE = 1.0Vdc) parts meet environmental standards of • Lead-free (I C = 100mAdc, V CE =1.0 Vdc) MIL-STD-19500 /228 Saturation Voltage product for packing code suffix "G" • RoHSCollector–Emitter SOD-123H Min Max 0.146(3.7) 0.130(3.3) hFE 0.012(0.3) Typ. –– 40 70 100 60 30 –– –– 300 –– –– –– –– 0.2 0.3 VCE(sat) (I C =free 10 product mAdc, I for 1.0 mAdc)(3) Halogen code suffix "H" B = packing (I C = 50 mAdc,data I B = 5.0mAdc) Mechanical Saturation Voltage(3) : UL94-V0 rated flame retardant • EpoxyBase–Emitter (I C = 10 mAdc, I B = 1.0mAdc) • Case : Molded plastic, SOD-123H (I C = 50mAdc, I B = 5.0mAdc ) , • Terminals :Plated terminals, solderable per MIL-STD-750 Unit 0.071(1.8) 0.056(1.4) Vdc V BE(sat) Vdc 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.65 –– 0.85 0.95 0.031(0.8) Typ. SMALL–SIGNAL CHARACTERISTICS Method 2026 Current–Gain —by Bandwidth • Polarity : Indicated cathodeProduct band (I C = 10mAdc, V CE= 20Vdc, f = 100MHz) • Mounting Position : Any Output Capacitance • Weight gram (V :CBApproximated = 5.0Vdc, I E = 0.011 0, f = 1.0 MHz) fT C obo Dimensions 200 in inches and ––(millimeters)MHz –– 4.0 pF Input Capacitance C ibo –– 8.0 pF MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (V BE = 0.5Vdc, I C = 0, f = 1.0 MHz) Ratings at 25℃ ambient temperature unless otherwise specified. Input Impedancen h ie 1.0 10 pF Single phase half wave, 60Hz, of inductive load. = 1.0mAdc, f = 1.0 kHz) (V CE = 10Vdc, I Cresistive For capacitive Voltage load, derate current by 20% Feedback Ratio h re 0.5 8.0 X10 –4 FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 SYMBOL kHz) Marking Code Small–Signal Current Gain 12 13 14 15 16 18 10 115 120 h fe 100 400 — 20 30 40 50 60 80 100 150 200 Maximum Recurrent = 10 Reverse Vdc, I C =Voltage 1.0 mAdc, f = 1.0 kHz) (V CEPeak Volts VRRM Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Output VoltageAdmittance VRMS h oe 1.0 40 θmhos 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE = Voltage Volts Maximum DC Blocking 20 30 40 50 60 80 100 150 200 VDC Noise Figure Amps Maximum Average Forward Rectified Current IO NF — 1.0 5.0 dB (V CE = 5.0 Vdc, I C = 100µAdc, R S = 1.0 k Ω, f = 1.0 kHz) Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amps SWITCHING CHARACTERISTICS superimposed on rated load (JEDEC method) Time (Note 2) Typical ThermalDelay Resistance (V CC = 3.0 Vdc,V BE = 0.5Vdc RΘJA I C = 10 mAdc, CJ I B1 = 1.0mAdc) (V CC = 3.0Vdc, -55 to +125 TJ I C = 10 TSTG mAdc,I B1 = I B2 = 1.0mAdc) Time (Note 1) Typical JunctionRise Capacitance Storage Time Operating Temperature Range Fall Time Storage Temperature Range td tr ts tf — 40 35 ns — 120 35 200 — -55 to +150 ns -— 65 to +175 50 ℃/W PF ℃ ℃ 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT FM120-MH CHARACTERISTICS SYMBOL Volts 0.9 0.92 VF 0.50 0.70 0.85 Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.5 10 mAmp NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2014-01 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT3904TT1 FM1200-M+ General Purpose Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. +3 V CYCLE =for 2%overvoltage protection. Guardring •DUTY ns high-speed switching. Ultra •300 +10.9 V 275 • Silicon epitaxial planar chip, metal silicon junction. standards of • Lead-free parts meet environmental 10 k MIL-STD-19500 /228 -ā0•.5RoHS V product for packing code suffix "G" < 1 packing ns Halogen free product for code suffix "H" 0.146(3.7) 0.130(3.3) +3 V t1 10 < t1 < 500 ms 0.012(0.3) Typ. +10.9 V DUTY CYCLE = 2% 0.071(1.8) 0.056(1.4) 10 k 0 CS < 4 pF* CS < 4 pF* 1N91k Mechanical data 275 -ā9.1 V < 1 ns 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H Typ. * Total shunt capacitance of test jig0.031(0.8) and connectors , • Terminals :Plated terminals, solderable per MIL-STD-750 Figure 1. Delay Method 2026 and Rise Time Equivalent Test Circuit 0.031(0.8) Typ. Figure 2. Storage and Fall Time Equivalent Test Circuit • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS 5.0 5000 2000 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code 12 20 13 30 Maximum Recurrent Peak Reverse Voltage C VRRM VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 ibo Maximum 3.0 RMS Voltage C Maximum 2.0 Average Forward Rectified Currentobo Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 1.0 0.1 IO IFSM RΘJA 5.0 7.0 10 Typical Junction Capacitance (Note 1) CJ REVERSE BIAS VOLTAGE (VOLTS) Operating Temperature Range TJ Typical Thermal Resistance (Note 2) 0.2 0.3 Storage Temperature Range 0.5 0.7 1.0 2.0 3.0 20 30 40 100014 70040 50028 15 50 35 42 56 30040 200 50 60 80 100 70 50 -55 to +125 CHARACTERISTICS 1.0 16 60 18 80 10 100 70 QT 100 1.0 30 2.0 3.0 115 150 120 200 Volts 105 140 Volts 150 200 Volts Amps QA Amps 40 5.0 7.0 10 20 30 50 70 100 120 IC, COLLECTOR CURRENT (mA) -55 to +150 ℃/W 200 PF ℃ - 65 to +175 Figure 4. Charge Data TSTG Figure 3. Capacitance ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage VCC = 40 V IC/IB = 10 3000 Q, CHARGE (pC) CAPACITANCE (pF) Ratings at1025℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. 7.0 load, derate current by 20% For capacitive @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2014-01 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT3904TT1 FM1200-M+ General Purpose Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers 500 better reverse leakage current and thermal resistance. 500 I C /I B = 10 • Low profile 300 surface mounted application in order to SOD-123H 300 200 TIME (ns) t r, RISE TIME (ns) optimize board space. 200 • Low power loss, high efficiency. 100 capability, low forward voltage drop. • High current 70 capability. • High surge t r @ V CC = 3.0 V 50 for overvoltage protection. • Guardring switching. • Ultra high-speed 30 40 V 20 planar chip, metal silicon junction. • Silicon epitaxial • Lead-free parts meet environmental standards of 15 V 10 MIL-STD-19500 /228 2.0 V 7 for packing code suffix "G"V OB = 0 V • RoHS product t d@ 5 Halogen free1.0product for packing code suffix "H" 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 0.146(3.7) 0.130(3.3) 50 0.071(1.8) 0.056(1.4) 30 20 10 7 5 1.0 2.0 3.0 I C , COLLECTOR CURRENT (mA) Epoxy : UL94-V0 rated flame retardant I C /I B =20 Ratings at 25℃ ambient temperature unless otherwise specified. 10 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load,7derate current by 20% 5.0 7.0 10 200 0.024(0.6) 0.031(0.8) Typ. V CC = 40 V I B1 = I B2 Dimensions in inches I C /Iand 20 B = (millimeters) 300 200 I /I =10 1.0 2.0 3.0 RATINGS 50 70 100 0.031(0.8) Typ. 100 70 50 I C /I B = 10 C B 30 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 20 20 5 30 500 t f, , FALL TIME (ns) t ’s , STORAGE TIME (ns) 20 Figure 6. Rise Time I B1 = I B2 30 5.0 7.0 10 0.040(1.0) I C , COLLECTOR CURRENT (mA) • Figure 5. Turn–On Time • Case : Molded plastic, SOD-123H , 500 • Terminals :Plated terminals, solderable per MIL-STD-750 t ’s = t s –1 /8 tf • Polarity : Indicated by cathode band Position : Any • Mounting100 70 • Weight : Approximated 0.011 gram 50 0.012(0.3) Typ. 100 70 Mechanical data 300 Method 2026 I C /I B =10 200 I C /I B =20 V CC = 40 V I C /I B = 10 10 7 5 20 30 50FM120-MH 70 100 FM130-MH 200 1.0 FM150-MH 2.0 3.0FM160-MH 5.0 7.0 10FM180-MH 20 FM1100-MH 30 50 70 FM1150-MH 100 200 FM1200-MH UNIT FM140-MH SYMBOL Marking Code I C , COLLECTOR CURRENT (mA) 12 Maximum Recurrent Peak Reverse Voltage VRRM Figure 7. Storage Time 20 13 30 14 40 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 15 I C , COLLECTOR 16 18 10 (mA) CURRENT 50 60 100 Figure 8. 80 Fall Time 115 150 120 200 Volts 105 140 Volts 35 42 56 70 50 60 80 100 150 200 Volts IO 1.0 TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS Peak Forward Surge Current 8.3 ms single half sine-wave Maximum Average Forward Rectified Current (V CE = 5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz) Typical Junction Capacitance (Note 1) CJ Operating Temperature 12 Range TJ Storage Temperature Range NF, NOISE FIGURE (dB) 10 RΘJA Typical Thermal Resistance (Note 2) -55 to +125 CHARACTERISTICS C IR SOURCE RESISTANCE =1.0k @T A=125℃ Rated DC Blocking Voltage NOTES: I C = 50µA 4 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2 SOURCE RESISTANCE=500Ω 2- Thermal Resistance From Junction to Ambient I = 100 µA 0 C 0.1 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) Figure 9. 2012-06 2014-01 ℃/W PF -55 to +150 ℃ f = 1.0 kHz - 65 to +175 I C = 1.0 mA ℃ = 0.5 mA FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT I C FM160-MH SYMBOL FM120-MH FM130-MH FM140-MH 10 FM150-MH SOURCE RESISTANCE =200Ω Volts 0.92 V F 0.50 0.70 0.85 50 µA I C = 0.9 I = 0.5 mA Maximum Average Reverse Current at @T A=25℃ 6 Amps 14 12 I C = 1.0 mA 8 40 120 SOURCE RESISTANCE=200Ω TSTG Maximum Forward Voltage at 1.0A DC Amps 30 IFSM superimposed on rated load (JEDEC method) NF, NOISE FIGURE (dB) 20 40 100 8 0.5 10 6 mAmps I C = 100 µA 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 R S , SOURCE RESISTANCE (kΩ) Figure 10. WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3904TT1 THRU FM1200-M+ General Purpose Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers h PARAMETERS better reverse leakage current and thermal resistance. SOD-123H (V CE to= 10 Vdc, f = 1.0 kHz, T A = 25°C) • Low profile surface mounted application in order optimize board space. hfe, CURRENT MIL-STD-19500 /228 RoHS product for packing code suffix "G" 70 Halogen free product for packing code suffix "H" 50 Mechanical data • Epoxy : UL94-V0 rated flame retardant 30 0.1 plastic, 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 SOD-123H • Case : Molded , • Terminals :Plated terminals, solderable per MIL-STD-750 I C , COLLECTOR CURRENT (mA) hie, INPUT IMPEDANCE (kΩ) • Polarity : Indicated by cathode band 20 • Mounting Position : Any 10 • Weight : Approximated 0.011 gram 5.0 0.5 Maximum RMS Voltage 0.1 0.2 0.3 0.5 12 20 VRRM Maximum Recurrent 0.2Peak Reverse Voltage 1.0 13 30 14 5.0 VRMS3.0 2.0 10 Maximum DC Blocking Voltage I C , COLLECTOR CURRENT VDC (mA)20 Maximum Average Forward Rectified Current Figure 13. Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 5 2 0.040(1.0) 0.024(0.6) 1 0.1 0.031(0.8) 0.2 Typ. 0.3 0.5 1.0 2.0 3.0 5.0 10 0.031(0.8) Typ. Figure 12. Output Admittance Dimensions in inches and (millimeters) 10 7.0 5.0 2.0 21 0.7 14 40 15 50 280.1 0.2 35 0.5 30 40 16 60 CJ Typical Junction Capacitance (Note 1) 2.0 TJ Operating Temperature Range Storage Temperature Range TSTG 1.0 T J = +125°C 10 100 1.056 2.0 3.0 70 5.0 115 150 120 200 Volts 10510 140 Volts 200 Volts 50I C , COLLECTOR 60 80 100 150 CURRENT (mA) 1.0 Figure 14. Voltage Feedback Ratio 30 IFSM RΘJA 18 80 0.5 42 0.3 TYPICAL STATIC CHARACTERISTICS Typical Thermal Resistance (Note 2) h FE, DC CURRENT GAIN (NORMALIZED) 10 Input Impedance IO -55 to +125 Amps Amps 40 120 ℃/W PF -55 to +150 ℃ V CE = 1.0 V - 65 to +175 ℃ +25°C CHARACTERISTICS 0.7 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC 0.5 Maximum Average Reverse Current at @T A=25℃ 0.50 –55°C 0.70 0.9 0.85 0.5 IR @T A=125℃ Rated DC Blocking Voltage 0.3 NOTES: 0.071(1.8) 0.056(1.4) 20 1.0 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH RATINGS Marking Code 50 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 3.0 Ratings at 25℃ ambient temperature unless otherwise specified. 2.0 Single phase half wave, 60Hz, resistive of inductive load. 1.0 derate current by 20% For capacitive load, 0.012(0.3) Typ. I C , COLLECTOR CURRENT (mA) Method 2026 Figure 11. Current Gain 0.146(3.7) 0.130(3.3) 100 h re, VOLTAGE FEEDBACK RATIO (X 10–4 ) • hoe, OUTPUT ADMITTANCE ( mhos) • Low power loss, high efficiency. 300 • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. 200 • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free 100 0.92 Volts mAmps 10 0.2 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C , COLLECTOR CURRENT (mA) Figure 15. DC Current Gain 2012-06 2014-01 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3904TT1 THRU FM1200-M+ General Purpose Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High1.0current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. 0.8 I C = 1.0 mA • Ultra high-speed switching. 10 mA • Silicon epitaxial planar chip, metal silicon junction. 0.6 parts meet environmental standards of • Lead-free 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. T J = 25°C 30 mA 100 mA 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.4 Halogen free product for packing code suffix "H" Mechanical data 0.2 • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H 0 , • Terminals terminals, solderable MIL-STD-750 0.01 :Plated 0.02 0.03 0.05 0.07 per0.1 0.2 Method 2026 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.3 0.5 0.7 I B , BASE CURRENT (mA) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. 1.0 2.0 3.0 5.0 7.0 10 Dimensions in inches and (millimeters) Figure 16. Collector Saturation Region 1.0 1.2 T J = 25°C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS V BE(sat) @ I C /I B =10 V, VOLTAGE (VOLTS) BE RATINGS 0.6 0.4 Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage VRRM 12 20 13 30 VRMS 14 21 VDC 20 30 V CE(sat) @ I C /I B =10 0.2 Maximum DC Blocking Voltage IO 50 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM superimposed on rated load (JEDEC method) I C , COLLECTOR CURRENT (mA) Maximum Average Forward Rectified Current 0 1.0 2.0 3.0 5.0 Typical Thermal Resistance (Note 2) Figure Typical Junction Capacitance (Note 1) CE +25°C TO +125°C θ VC FOR V CE(sat) 0 –55°C TO +25°C –0.5 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH Marking Code 0.5 COEFFICIENT(mV/°C) 1.0 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. 0.8 For capacitive load, derate current by 20% V @ V =1.0 V 10 20 RΘJA 17. “ON” Voltages CJ TJ Operating Temperature Range Storage Temperature Range –1.0 14 40 15 50 16 60 18 80 10 TO +125°C 115 +25°C 100 150 120 200 Volts 28 35 42 56 –55°C 70 TO +25°C 105 140 Volts 40 50 60 80 100 200 Volts –1.5 θ –2.0 100 200 0 20 VB FOR V BE(sat) 1.0 80 100 120 140 160 30 I C , COLLECTOR CURRENT (mA) 40 60 150 Amps 180 200 Amps Coefficients Figure 18. Temperature 40 120 -55 to +125 ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2014-01 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT3904TT1 FM1200-M+ General Purpose Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SC-89 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .067(1.70) .059(1.50) .067(1.70) .059(1.50) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .012(0.30)MIN. 0.071(1.8) 0.056(1.4) Mechanical data .040(0.95) .030(0.75) 0.012(0.3) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS .008(0.20) 13 14 15 .004(0.10) 30 40 50 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 21 28 VDC 20 30 40 .043(1.10) Maximum DC Blocking Voltage .035(0.90) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range TSTG 16 60 18 80 10 100 115 150 120 200 Volts 35 42 56 70 105 140 Volts 50 60 80 100 150 200 Volts 1.0 30 .031(0.80) .024(0.60) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ IR Rated DC Blocking Voltage @T A=125℃ NOTES: .013(0.33) 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmps 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .009(0.23) 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2014-01 Rev.DCORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS General Purpose Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features FM120-M+ THRU MMBT3904TT1 FM1200-M+ Pb Free Product Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Device PN Packing • High current capability, low forward voltage drop. (1) capability. • High surge MMBT3904TT1 G ‐WS Tape&Reel: 3 Kpcs/Reel Guardring for overvoltage protection. •Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. epitaxial planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts V RRM which may be included on WILLAS data sheets and/ or specifications can Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Amps Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amps superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range T J ℃ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT or indirectly cause injury or threaten a life without expressed written approval Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmp 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2014-01 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.