WILLAS FM120-M+ THRU MBR20200CT FM1200-M+ 20.0A SCHOTTKY BARRIER RECTIFIERS 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V TO-220AB PACKAGE Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Features optimize board space. • x TO-220AB High Junction Temperature Capability power loss, high efficiency. • LowLeakage Low Current • High current capability, low forward voltage drop. Pb-Free package is available • High surge capability. RoHS product for packingprotection. code suffix ”G” for overvoltage • Guardring Ultra high-speed switching. •Halogen free product for packing code suffix “H” epitaxial planarPlastic. chip, metal junction. • Silicon Case Material: Molded ULsilicon Flammability Lead-free parts meet environmental standards of •Classification Rating 94V-0 and MSL Rating 1 MIL-STD-19500 /228 Marking : type packing code suffix "G" • RoHS product fornumber 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. .380(9.65) .420(10.67) 0.071(1.8) 0.056(1.4) .560(14.22) .625(15.88) • • • Halogen free product for packing code suffix "H" Maximum Ratings Mechanical data • •Operating J unction Temperature : 150°C Epoxy : UL94-V0 rated flame retardant • Storage Temperature: - 5 0 °C to +150°C • Case : Molded plastic, SOD-123H • Mounting Torgue: 5 in-lbs Maximum , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .050(1.14) .060(1.52) .190(4.83) .210(5.33) .140(3.56) RATINGS FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH.190(4.82) Electrical Characteristics @ 25°C Unless Otherwise Specified Marking Code 12 13 14 Average Forward IF(AV) Maximum Recurrent Peak Reverse Voltage Current Maximum RMS Voltage Peak Forward Surge Maximum DC Blocking Voltage Current IFSM Maximum Average Forward Rectified Current Maximum Peak Forward Surge Current 8.3 ms single half sine-wave Instantaneous superimposed on rated load (JEDEC method) Voltage(Note 2) Typical Forward Thermal Resistance MBR20200CT Typical Junction Capacitance (Note 1) VF VF Operating Temperature Range Storage Temperature Range 20 A VRRM T20 °C C = 12530 40 15 50 16 60 18 80 10 100 .230(5.84) .270(6.86) .250(6.35) .500(12.70) .580(14.73) Maximum Maximum Maximum Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band Catalog Recurrent RMS DC Position : Any • Mounting Number Peak Reverse Voltage Blocking • Weight : Approximated 0.011Voltage gram Voltage MBR 20200 CT 200 V 140V 200 V .190(2.29) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .110(2.79) .045(1.14) 115 .055(1.39) 150 120 200 Volts VRMS 14 21 28 35 42 56 70 105 140 Volts VDC 20 30 40 50 60 80 100 150 200 Volts 150A IO IFSM RΘJA .95CVJ .80V TJ 8.3ms, half sine wave 1.0 30 IFM = 10A Amp .050(1.27) 40 120 TJ = 25°C -55 to +125 TJ =125°C Amp ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum Maximum Average Reverse Current at @T IRA=25℃ Reverse Current At Rated DC Blocking NOTES: Voltage Rated DC Blocking Voltage @T A=125℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF 50uA IR 15mA 0.50 Tc = 25°C T c = 125°C 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7. 2012-06 2012-12 0.70 0.85 0.9 0.5 10 0.92 Volts mAmp .012(0.30) .025(0.64) .080(2.04) .115(2.92) Dimensions in inches and (millimeters) WILLAS ELECTRONICCORP. CORP. WILLAS ELECTRONIC WILLAS FM120-M+ THRU MBR20200CT FM1200-M+ 20.0A SCHOTTKY BARRIER RECTIFIERS 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V TO-220AB PACKAGE Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers 100 reverse leakage current and thermal resistance. better 10,000 IF, INSTANEOUS FORWARD CURRENT (AMP) • Low 70 profile surface mounted application in order to optimize board space. 50 SOD-123H TJ = 150°C 1,000 IR , REVERSE CURRENT ( µ A) • Low power loss, high efficiency. TJ = 150°C voltage drop. • High current capability, low forward • High surge capability. 20 • Guardring for overvoltage protection. TJ = 125°C • Ultra high-speed switching. 10 epitaxial planar chip, metal silicon junction. • Silicon 7 parts meet environmental standards of • Lead-free TJ = 100°C MIL-STD-19500 /228 5 RoHS product for packing code suffix "G" • Halogen free product for packing code suffix "H" TJ = 25°C Mechanical data 2 0.146(3.7) 0.130(3.3) 100 TJ = 100°C 1 0.1 0.01 20 0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) PF(AV), AVERAGE POWER DISSIPATION (WATTS) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS dc 13 30 VRMS 14 21 30 20 VDC25 , AVERAGE FORWARD CURRENT Maximum Average ForwardIF(AV) Rectified Current IO (AMPS) 35 30 20 15 180 200 dc SQUARE WAVE 10 Maximum Average Reverse Current at @T A=25℃ 4 Voltage @T A=125℃ Rated DC Blocking C, CAPACITANCE (pF) dc Storage Temperature Range 12 TSTG 5 0 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts 28 35 42 56 70 105 140 Volts 40 90 10050 100 150 110 60 120 80 130 140 150 TC, CASE TEMPERATURE (°C) 1.0 Figure 4. Current Derating, Case 160200 Volts Amps 30 40 120 Amps ℃/W TJ = 25°C PF -55 to +150 ℃ - 65 to +175 300 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 200 0.50 VF IR 1- Measured at 1 MHZ reverse VDC. 125 0 and applied 25 50 voltage 75 of 4.0100 2- Thermal Resistance From JunctionTAto, AMBIENT Ambient TEMPERATURE (°C) 2012-06 2012-12 160 0.031(0.8) Typ. 20 Figure 3. Forward Power Dissipation Peak Forward Surge Current 8.3 ms single half sine-wave IFSM 500 20rated load (JEDEC method) superimposed on RθJA = 16°C/W RATED VOLTAGE Typical Thermal Resistance (Note 2) RΘJA 16Capacitance (Note 1) Typical Junction CJ 400 -55 to +125 Operating Temperature Range TJ 0 140 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 12 20 NOTES: 120 RATED VOLTAGE RθJC = 2°C/W 28 CHARACTERISTICS SQUARE 8 WAVE Maximum Forward Voltage at 1.0A DC SQUARE WAVE VRRM 100 Dimensions in inches and (millimeters) 24 ambient temperature Ratings at 25℃ unless otherwise specified. IPK = 20 IAV resistive of inductive load. Single phase20half wave, 60Hz, For capacitive 16 load, derate current by 20% IF(AV), AVERAGE FORWARD CURRENT (AMPS) 80 25 10 Maximum Recurrent Peak Reverse Voltage 4 Maximum RMS Voltage 0 Maximum DC Blocking Voltage 0 5 10 15 60 Figure 2. Typical Reverse Current (Per Leg) 32 12 Marking Code 8 0.040(1.0) 0.024(0.6) VR, REVERSE CURRENT (VOLTS) Method 2026 40 0.031(0.8) Typ. Figure 1. Typical Forward Voltage (Per Leg) 0.071(1.8) 0.056(1.4) 10 TJ = 25°C • Epoxy : UL94-V0 rated flame retardant 1 : Molded plastic, SOD-123H • Case 0.2 0.4 0.6 0.8 1 , • Terminals :Plated solderable MIL-STD-750 INSTANTANEOUS VOLTAGEper (VOLTS) vF, terminals, • Polarity : Indicated by cathode band 40 TJ = :125°C Position Any • Mounting 36 • Weight : Approximated 0.011 gram 0.012(0.3) Typ. TJ = 125°C 0.70 Figure 5. Current Derating, Ambient 175 0.92 0 1 2 5 Volts mAmps 10 100 150 0.9 0.85 0.5 10 20 50 70 100 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Typical Capacitance (Per Leg) WILLASELECTRONIC ELECTRONIC CORP. CORP. WILLAS