Not for New Design TSOP35D25 www.vishay.com Vishay Semiconductors IR Receiver Modules for 3D Synchronization Signals FEATURES • Center frequency at 25 kHz to reduce interference with IR remote control signals at 30 kHz to 56 kHz • Package can be used with IR emitters with wavelength 830 nm as well as standard 940 nm • Very low supply current and stand-by mode • Photo detector and preamplifier in one package 1 2 3 4 • Internal filter for PCM frequency • Supply voltage range: 2.5 V to 5.5 V 16797 • Improved immunity against modulated light sources • Insensitive to supply voltage ripple and noise • Taping available for topview and sideview assembly MECHANICAL DATA • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Pinning: 1 = GND, 2 = N.C., 3 = VS, 4 = OUT DESCRIPTION The TSOP35D25 is an SMD IR receiver module for 3D synchronization signals. The receiver is designed to operate at a carrier frequency of 25 kHz and a wavelength of 830 nm to avoid interference with standard remote control systems at 940 nm and 30 kHz to 56 kHz. The TSOP35D25 can receive continuously transmitted signal patterns with a minimum burst length of 6 cycles and frame rates up to 200 Hz. The circuit provides good suppression of optical noise from CFLs, LCD backlight and plasma panels. PARTS TABLE CARRIER FREQUENCY GOOD NOISE SUPPRESSION AND FAST BURST RATE 25 kHz TSOP35D25 BLOCK DIAGRAM APPLICATION CIRCUIT 17170_5 3 VS 4 Input AGC Band pass Demo dulator R1 IR receiver VS Circuit 30 kΩ Transmitter with TSALxxxx OUT + VS C1 µC OUT GND VO GND 1; 2 PIN Control circuit R1 and C1 are recommended for protection against EOS. Components should be in the range of 33 Ω < R1 < 1 kΩ, C1 > 0.1 µF. GND 16839 Rev. 1.3, 03-Sep-13 1 Document Number: 83298 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Design TSOP35D25 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT VS - 0.3 to + 6 V mA Supply voltage (pin 3) Supply current (pin 3) IS 3 Output voltage (pin 4) VO - 0.3 to (VS + 0.3) V Output current (pin 4) IO 5 mA Junction temperature Tj 100 °C Tstg - 40 to + 100 °C Tamb - 30 to + 85 °C Ptot 10 mW Storage temperature range Operating temperature range Tamb ≤ 85 °C Power consumption Note • Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability. ELECTRICAL AND OPTICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Supply current (pin 3) TEST CONDITION SYMBOL MIN. TYP. MAX. Ev = 0, VS = 3.3 V ISD 0.27 0.35 0.45 Ev = 40 klx, sunlight ISH Supply voltage VS IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 VOSL Minimum irradiance Pulse width tolerance: tpi - 80 μs < tpo < tpi + 160 μs, test signal see fig. 1 Ee min. Maximum irradiance tpi - 80 μs < tpo < tpi + 160 μs, test signal see fig. 1 Ee max. Angle of half transmission distance ϕ1/2 Directivity mA 2.5 d Output voltage low (pin 4) mA 0.45 Ev = 0, test signal see fig. 1, IR diode TSHG8400, IF = 250 mA Transmission distance UNIT 5.5 V 35 m 0.15 100 mV 0.35 mW/m2 W/m2 30 ± 50 deg TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 0.30 Optical Test Signal t tpi trep VO Output Pulse Width (IR diode TSHG8400, N = 6 cycles/burst, f = 25 kHz, trep = 10 ms) tpo - Output Pulse Width (ms) Ee Output Signal tpi ≥ 240 µs trep ≥ 4.1 ms tpi - 80 µs < tpo < tpi + 160 µs 120 µs < tdon < 240 µs t 22477 tdon 0.25 Input Burst Length 0.20 0.15 0.10 tpo 0 0.1 22476 Fig. 1 - Output Active Low Rev. 1.3, 03-Sep-13 λ = 830 nm, Optical Test Signal, Fig.1 0.05 1 10 102 103 104 105 Ee - Irradiance (mW/m2) Fig. 2 - Pulse Length and Sensitivity in Dark Ambient 2 Document Number: 83298 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Design TSOP35D25 www.vishay.com Vishay Semiconductors Optical Test Signal 600 µs t 600 µs t = 60 ms 94 8134 Output Signal, (see fig. 4) VO VOH VOL t on 4 Ee min. - Threshold Irradiance (mW/m2) Ee Correlation with Ambient Light Sources: 2 3.5 10 W/m = 1.4 kLx (Std. illum. A, T = 2855 K) 10 W/m2 = 8.2 kLx (Daylight, T = 5900 K) 3 2 1.5 1 0.5 0 0.01 t t off Wavelength of Ambient Illumination: λ = 950 nm 2.5 20757 Ee min. - Threshold Irradiance (mW/m2) Ton, Toff - Output Pulse Width (ms) 0.8 Ton 0.6 0.5 Toff 0.4 0.3 λ = 950 nm, Optical Test Signal, Fig. 1 0.2 0.1 0 0.1 1 22021 10 Ee - Irradiance 100 1000 10 100 1.0 f = 100 Hz 0.9 0.8 f = 10 kHz 0.7 0.6 f = 20 kHz 0.5 0.4 f = 30 kHz 0.3 f = fo 0.2 0.1 0 10 000 1 (mW/m2) 10 100 1000 VsRMS - AC Voltage on DC Supply Voltage (mV) 20753 Fig. 7 - Sensitivity vs. Supply Voltage Disturbances Fig. 4 - Output Pulse Diagram 1.2 500 E - Max. Field Strength (V/m) E e min./Ee - Rel. Responsivity 1 Fig. 6 - Sensitivity in Bright Ambient Fig. 3 - Output Function 0.7 0.1 Ee - Ambient DC Irradiance (W/m2) 1.0 0.8 0.6 0.4 f = f0 ± 5 % Δ f(3 dB) = f0/10 0.2 450 400 350 300 250 200 150 100 50 0.0 0 0.7 16925 0.9 1.1 0 1.3 20747 f/f0 - Relative Frequency Fig. 5 - Frequency Dependence of Responsivity Rev. 1.3, 03-Sep-13 500 1000 1500 2000 2500 3000 f - EMI Frequency (MHz) Fig. 8 - Sensitivity vs. Electric Field Disturbances 3 Document Number: 83298 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Design TSOP35D25 www.vishay.com Vishay Semiconductors 0° 0.9 10° 20° 30° 0.8 Max. Envelope Duty Cycle f = 25 kHz, Ee = 3 mW/m² 0.7 40° 0.6 1.0 0.5 0.4 0.3 constant irradiance 0.9 50° 0.8 60° 0.2 70° 0.7 variable irradiance 0.1 80° 0 0 22022 10 20 30 40 50 60 70 80 0.6 Burst Length (number of cycles/burst) 0.2 0 0.2 0.6 0.4 Fig. 12 - Horizontal Directivity Fig. 9 - Maximum Envelope Duty Cycle vs. Burst Length 0.3 0.2 Ee min. - Sensitivity (mW/m2) Ee min. - Threshold Irradiance (mW/m2) 0.4 d rel - Relative Transmission Distance 16801 0.25 0.2 0.15 0.1 0.05 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 - 30 - 10 10 30 50 70 0 90 2 Tamb - Ambient Temperature (°C) 20755 20756 2.5 3 3.5 4 4.5 5 5.5 6 VS - Supply Voltage (V) Fig. 13 - Sensitivity vs. Supply Voltage Fig. 10 - Sensitivity vs. Ambient Temperature S ( λ) rel - Relative Spectral Sensitivity 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 700 750 22484 800 850 900 950 1000 1050 1100 λ - Wavelength (nm) Fig. 11 - Relative Spectral Sensitivity vs. Wavelength Rev. 1.3, 03-Sep-13 4 Document Number: 83298 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Design TSOP35D25 www.vishay.com Vishay Semiconductors SUITABLE DATA FORMAT IR Signal The TSOP35D25 is designed to suppress spurious output pulses due to noise or disturbance signals. Data and disturbance signals can be distinguished by the devices according to carrier frequency, burst length and envelope duty cycle. The data signal should be close to the band-pass center frequency (e.g. 25 kHz) and fulfill the conditions in the table below. When a data signal is applied to the TSOP35D25 in the presence of a disturbance signal, the sensitivity of the receiver is reduced to insure that no spurious pulses are present at the output. Some examples of disturbance signals which are suppressed are • DC light (e.g. from tungsten bulb or sunlight) 0 5 10 15 20 Time (ms) 16920 • Continuous signals at any frequency Fig. 14 - IR Signal from Fluorescent Lamp with Low Modulation IR Signal • Strongly or weakly modulated noise from fluorescent lamps with electronic ballasts (see figure 14 or figure 15) 0 16921 5 10 15 20 Time (ms) Fig. 15 - IR Signal from Fluorescent Lamp with High Modulation TSOP35D25 Minimum burst length 6 cycles/burst After each burst of length a minimum gap time is required of 6 to 24 cycles ≥ 6 cycles For bursts greater than a minimum gap time in the data stream is needed of 24 cycles > 4 x burst length Maximum rate of short bursts (constant irradiance) 2000 bursts/s Maximum rate of short bursts (variable irradiance) 220 bursts/s Rev. 1.3, 03-Sep-13 5 Document Number: 83298 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Design TSOP35D25 www.vishay.com Vishay Semiconductors STAND-BY MODE OF THE TSOP35D25 If an application requires an ultra low average supply current in order to save battery life, the TSOP35D25 can be operated with an intermittent supply voltage. A typical application circuit shown in fig. 16. Battery Supply TSOP3... Input RC data Low Power Microcontroller IR Receiver (memorizing the gain level during standby) RS 3 MΩ other input and output lines Output IR Rec. SBY VS = 2.5 V to 5.5 V 22023 Fig. 16 - Application Circuit for the TSOP3…with Intermittent Supply Voltage To receive a continuous data signal while using the TSOP3… with an intermittent supply voltage, the receiver must be activated in advance of the expected data frame as shown in figure 17. The transmitted IR synchronizing pattern Synchronizing pattern, sent by the TV The standby is deactivated in advance of the expected data frame Standby on Output signal of the microcontroller to control the standby mode of the IR Receiver Standby off Output signal of the TSOP35D25 valid sync. pattern Data is valid only 2 ms after the standby off signal 22024 Fig. 17 - Signal Timing in Power Saving Mode with Continuous Receiving Function In normal operation without using the stand-by feature, the gain level of the TSOP35D25 returns to a default level after the device is disconnected from supply voltage and reconnected again. A settling time of up to 100 ms is necessary until the gain has settled to an optimum level that is well matched to the ambient noise level. Using the device in stand-by mode, the TSOP35D25 memorizes its gain setting while in standby. On re-activation, the gain immediately returns to the correct level present before stand-by. This operation insures that there are no spurious pulses on power-up due to mismatch between the gain level and the ambient light conditions. Rev. 1.3, 03-Sep-13 6 Document Number: 83298 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Design TSOP35D25 www.vishay.com Vishay Semiconductors ELECTRICAL AND OPTICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. VS = 3 V RS 1.2 1.5 2 VS = 5 V RS 2 3 4 VS = 3 V, RS = 1.5 MΩ ISBY 1 1.4 2 VS = 5 V, RS = 3 MΩ ISBY 1 1.4 2 VS > 2.5 V, dark ambient, output is valid tdelay 0.4 0.8 VS > 2.5 V, 10 kLux dayligth, output is valid tdelay 1.5 2.5 Serial resistor to activate the standby mode Standby supply current Latency time for standby-off (delay until there is a valid respose) Duration of standby-off period UNIT MΩ μA ms VS > 2.5 V, dark ambient tSBY_OFF VS > 2.5 V, 10 kLux daylight 1 3 ms TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 2.5 Latency Time after Standby-off until there is a valid Output Signal Latency Time (ms) 2 1.5 1 0.5 0 0.1 22025 1 10 100 Ambient Daylight Brightness (kLux) Fig. 18 - Delay Time after Standby-off until the TSOP3… is ready to receive Data Rev. 1.3, 03-Sep-13 7 Document Number: 83298 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Design TSOP35D25 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 7.5 Pick and place area. TT taping 7.2 (1.5) 2.8 2.2 5.3 A 1 4 0.5 ± 0.15 0.1 (1.4) 0.3 4x 0.1 1.27 2.9 3 x 1.27 = 3.81 4 0.4 A 5.51 Not indicated tolerances ± 0.3 Pick and place area. TR taping technical drawings according to DIN specifications 2.6 Footprint 2.35 3 x 1.27 = 3.81 0.9 2.2 1.27 R 1.7 Drawing-No.: 6.544-5341.01-4 Issue: 8; 02.09.09 16776 ASSEMBLY INSTRUCTIONS Reflow Soldering Manual Soldering • Reflow soldering must be done within 72 h while stored under a max. temperature of 30 °C, 60 % RH after opening the dry pack envelope • Use a soldering iron of 25 W or less. Adjust the temperature of the soldering iron below 300 °C • Set the furnace temperatures for pre-heating and heating in accordance with the reflow temperature profile as shown in the diagram. Excercise extreme care to keep the maximum temperature below 260 °C. The temperature shown in the profile means the temperature at the device surface. Since there is a temperature difference between the component and the circuit board, it should be verified that the temperature of the device is accurately being measured • Handle products only after the temperature has cooled off • Finish soldering within 3 s • Handling after reflow should be done only after the work surface has been cooled off Rev. 1.3, 03-Sep-13 8 Document Number: 83298 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Design TSOP35D25 www.vishay.com Vishay Semiconductors VISHAY LEAD (Pb)-FREE REFLOW SOLDER PROFILE 300 max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 T (°C) 200 max. 20 s 150 max. 100 s max. 120 s 100 max. Ramp Up 3 °C/s max. Ramp Down 6 °C/s 50 0 0 19800 50 100 150 t (s) 200 250 300 max. 2 cycles allowed TAPING VERSION TSOP..TT DIMENSIONS in millimeters 16584 Rev. 1.3, 03-Sep-13 9 Document Number: 83298 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Design TSOP35D25 www.vishay.com Vishay Semiconductors TAPING VERSION TSOP..TR DIMENSIONS in millimeters 16585 Rev. 1.3, 03-Sep-13 10 Document Number: 83298 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Design TSOP35D25 www.vishay.com Vishay Semiconductors REEL DIMENSIONS in millimeters 16734 LEADER AND TRAILER DIMENSIONS in millimeters Trailer no devices Leader devices no devices End Start min. 200 min. 400 96 11818 COVER TAPE PEEL STRENGTH LABEL According to DIN EN 60286-3 0.1 N to 1.3 N 300 mm/min. ± 10 mm/min. 165° to 180° peel angle Standard bar code labels for finished goods Rev. 1.3, 03-Sep-13 The standard bar code labels are product labels and used for identification of goods. The finished goods are packed in final packing area. The standard packing units are labeled with standard bar code labels before transported as finished goods to warehouses. The labels are on each packing unit and contain Vishay Semiconductor GmbH specific data. 11 Document Number: 83298 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Design TSOP35D25 www.vishay.com Vishay Semiconductors VISHAY SEMICONDUCTOR GmbH STANDARD BAR CODE PRODUCT LABEL (finished goods) PLAIN WRITTING Item-description Item-number Selection-code LOT-/serial-number Data-code Plant-code Quantity Accepted by Packed by Mixed code indicator Origin LONG BAR CODE TOP Item-number Plant-code Sequence-number Quantity Total length SHORT BAR CODE BOTTOM Selection-code Data-code Batch-number Filter Total length ABBREVIATION INO SEL BATCH COD PTC QTY ACC PCK MIXED CODE xxxxxxx+ TYPE N N X N TYPE X N X - DRY PACKING LENGTH 18 8 3 10 3 (YWW) 2 8 Company logo LENGTH 8 2 3 8 21 LENGTH 3 3 10 1 17 In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 h at 40 °C + 5 °C/- 0 °C and < 5 % RH (dry air/nitrogen) or 96 h at 60 °C + 5 °C and < 5 % RH for all device containers or 24 h at 125 °C + 5 °C not suitable for reel or tubes. The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. Aluminum bag An EIA JEDEC® standard JSTD-020 level 4 label is included on all dry bags. Label LEVEL CAUTION This bag contains MOISTURE-SENSITIVE DEVICES Reel 15973 4 1. Shelf life in sealed bag: 12 months at < 40 °C and < 90 % relative humidity (RH) FINAL PACKING 2. After this bag is opened, devices that will be subjected to soldering reflow or equivalent processing (peak package body temp. 260 °C) must be 2a. Mounted within 72 hours at factory condition of < 30 °C/60 % RH or 2b. Stored at < 5 % RH The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes. 3. Devices require baking befor mounting if: Humidity Indicator Card is > 10 % when read at 23 °C ± 5 °C or 2a. or 2b. are not met. RECOMMENDED METHOD OF STORAGE 4. If baking is required, devices may be baked for: 192 hours at 40 °C + 5 °C/- 0 °C and < 5 % RH (dry air/nitrogen) or 96 hours at 60 °C ± 5 °C and < 5 % RH for all device containers or 24 hours at 125 °C ± 5 °C not suitable for reels or tubes Dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: Bag Seal Date: (If blank, see barcode label) • Storage temperature 10 °C to 30 °C Note: Level and body temperature defined by EIA JEDEC Standard JSTD-020 • Storage humidity ≤ 60 % RH max. 22522 After more than 72 h under these conditions moisture content will be too high for reflow soldering. Rev. 1.3, 03-Sep-13 EIA JEDEC standard JSTD-020 level 4 label is included on all dry bags 12 Document Number: 83298 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Design TSOP35D25 www.vishay.com Vishay Semiconductors ESD PRECAUTION VISHAY SEMICONDUCTORS STANDARD BAR CODE LABELS Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the antistatic shielding bag. Electro-static sensitive devices warning labels are on the packaging. The Vishay Semiconductors standard bar code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Semiconductors specific data. 22178 Rev. 1.3, 03-Sep-13 13 Document Number: 83298 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000