TSOP362.. Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP362.. - series are miniaturized SMD-IR Receiver Modules for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. TSOP362.. is the standard IR remote control SMD-Receiver series, for 3 V supply voltage supporting all major transmission codes. 1 2 3 4 16797 Features Mechanical Data • Photo detector and preamplifier in one package • Internal filter for PCM frequency • Continuous data transmission possible e3 • TTL and CMOS compatibility • Output active low • Low power consumption • High immunity against ambient light • Supply voltage: 2.7 V to 5.5 V • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Pinning: 1 = GND, 2 = GND, 3 = VS, 4 = OUT Parts Table Part Carrier Frequency TSOP36230 30 kHz TSOP36233 33 kHz TSOP36236 36 kHz TSOP36237 36.7 kHz TSOP36238 38 kHz TSOP36240 40 kHz TSOP36256 56 kHz Special Features Application Circuit • Improved immunity against ambient light • Suitable burst length (≥ 10 cycles/burst) • Taping available for topview and sideview assembly 17403 Block Diagram R 1 = 100 Ω HSxxxx VS Circuit Transmitter with TSALxxxx OUT GND + VS C1 = 4.7 µF µC VO GND 3 30 kΩ VS 4 Input AGC Band Pass Demodulator OUT R1 + C1 recommended to suppress power supply disturbances. The output voltage should not be hold continuously at a voltage below VO = 2.0 V by the external circuit. 1; 2 PIN Control Circuit GND 16839 Document Number 82187 Rev. 1.6, 23-Oct-06 www.vishay.com 1 TSOP362.. Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Supply Voltage Parameter Pin 3 Test condition VS - 0.3 to + 6.0 V Supply Current Pin 3 IS 3 mA Output Voltage Pin 4 VO - 0.3 to (VS+ 0.3) V Output Current Pin 4 IO 10 mA Junction Temperature Tj 100 °C Tstg - 40 to + 100 °C Tamb - 25 to + 85 °C Ptot 30 mW Storage Temperature Range Operating Temperature Range Power Consumption Unit Tamb ≤ 85 °C Electrical and Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Supply Current Symbol Min Typ. Max Ev = 0 Test condition ISD 0.7 1.2 1.5 Ev = 40 klx, sunlight ISH Supply Voltage VS Transmission Distance Ev = 0, test signal see fig. 1, IR diode TSAL6200, IF = 250 mA Output Voltage Low IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 VOSL Minimum Irradiance (30 - 40 kHz) VS = 3 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Ee min Minimum Irradiance (56 kHz) VS = 3 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Minimum Irradiance (30 - 40 kHz) 1.3 2.7 d Unit mA mA 5.5 35 V m 250 mV 0.35 0.5 mW/m2 Ee min 0.4 0.6 mW/m2 VS = 5 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Ee min 0.45 0.6 mW/m2 Minimum Irradiance (56 kHz) VS = 5 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Ee min 0.5 0.7 mW/m2 Maximum Irradiance tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 3 Ee max Directivity Angle of half transmission distance www.vishay.com 2 ϕ1/2 30 W/m2 ± 45 deg Document Number 82187 Rev. 1.6, 23-Oct-06 TSOP362.. Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified Optical Test Signal 1.0 (IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms) t tpi * T 10/fo is recommended for optimal function * tpi VO Output Signal 1) 2) VOH 16110 7/f0 < td < 15/f0 tpi - 5/f 0 < tpo < tpi + 6/f 0 VOL tpo2 ) td1 ) Ton ,Toff - Output Pulse Width (ms) Ee t 0.9 0.8 Ton 0.7 0.6 0.5 Toff 0.4 0.3 0.2 = 950 nm, optical test signal, fig. 3 0.1 0.0 0.1 1.0 16909 Figure 1. Output Function Figure 4. Output Pulse Diagram 1.2 1.0 t po - Output Pulse Width (ms) E e min /E e - Rel. Responsivity Output Pulse 0.9 0.8 Input Burst Duration 0.7 0.6 0.5 0.4 0.3 0.2 = 950 nm, optical test signal, fig. 1 0.1 0.0 0.1 1.0 10.0 1.0 0.8 0.6 0.4 f = f0 ± 5 % f (3 dB) = f0/10 0.2 0.0 0.7 100.0 1000.0 10000.0 Ee - Irradiance (mW/m²) 16908 0.9 1.1 f/f0 - Relative Frequency 16925 Figure 2. Pulse Length and Sensitivity in Dark Ambient Ee 10.0 100.0 1000.0 10000.0 Ee - Irradiance (mW/m²) 1.3 Figure 5. Frequency Dependence of Responsivity Optical Test Signal 600 µs t 600 µs T = 60 ms VO 94 8134 Output Signal, (see fig. 4) VOH VOL Ton Toff t Ee min - Threshold Irradiance (mW/m2 ) 4.0 3.5 3.0 2.5 2.0 1.5 Document Number 82187 Rev. 1.6, 23-Oct-06 Ambient, = 950 nm 1.0 0.5 0.0 0.01 16911 Figure 3. Output Function Correlation with ambient light sources: 10 W/m2 1.4 klx (Std.illum.A, T= 2855 K) 10 W/m2 8.2 klx (Daylight, T = 5900 K) 0.10 1.00 10.00 100.00 E - Ambient DC Irradiance (W/m 2) Figure 6. Sensitivity in Bright Ambient www.vishay.com 3 TSOP362.. 16912 2.0 f = fo 1.5 f = 10 kHz 1.0 f = 1 kHz 0.5 f = 100 Hz 0.0 0.1 1.0 10.0 100.0 1000.0 VsRMS - AC Voltage on DC Supply Voltage (mV) 0.6 Ee min - Threshold Irradiance (mW/m²) Ee min- Threshold Irradiance (mW/m²) Vishay Semiconductors Sensitivity in dark ambient 0.5 0.4 0.3 0.2 0.1 0.0 - 30 - 15 0 15 30 45 60 75 16918 Tamb - Ambient Temperature (°C) Figure 7. Sensitivity vs. Supply Voltage Disturbances 90 Figure 10. Sensitivity vs. Ambient Temperature S ( λ) rel - Relative Spectral Sensitivity E e min - Threshold Irradiance (mW/m²) 1.2 2.0 f(E) = f0 1.6 1.2 0.8 0.4 0.0 0.0 0.4 0.8 1.2 1.6 2.0 E - Field Strength of Disturbance (kV/m) 94 8147 Figure 8. Sensitivity vs. Electric Field Disturbances 1.0 0.8 0.6 0.4 0.2 0.0 750 850 950 1050 1150 λ - Wavelength (nm) 16919 Figure 11. Relative Spectral Sensitivity vs. Wavelength 0° 1.0 10° 20° 30° Max. Envelope Duty Cycle 0.9 0.8 0.7 40° 0.6 1.0 0.5 0.9 50° 0.8 60° 0.4 0.3 f = 38 kHz, Ee = 2 mW/m2 0.2 70° 0.7 80° 0.1 0.0 0 16914 20 40 60 80 100 120 Burst Length (number of cycles/burst) Figure 9. Max. Envelope Duty Cycle vs. Burstlength www.vishay.com 4 16801 0.6 0.4 0.2 0 0.2 0.4 0.6 d rel - Relative Transmission Distance Figure 12. Directivity Document Number 82187 Rev. 1.6, 23-Oct-06 TSOP362.. Vishay Semiconductors 1.0 E e min - Sensitivity (mW/m 2 ) 0.9 0.8 0.7 0.6 • DC light (e.g. from tungsten bulb or sunlight) • Continuous signal at 38 kHz or at any other frequency • Signals from fluorescent lamps with electronic ballast with high or low modulation (see Figure 14 or 15). 0.5 0.4 0.3 0.2 17185 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VS - Supply Voltage (V) Figure 13. Sensitivity vs. Supply Voltage IR Signal 0.1 IR Signal from fluorescent lamp with low modulation Suitable Data Format Document Number 82187 Rev. 1.6, 23-Oct-06 0 5 10 15 20 Time (ms) 16920 Figure 14. IR Signal from Fluorescent Lamp with low Modulation IR Signal from fluorescent lamp with high modulation IR Signal The circuit of the TSOP362.. is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. A bandpass filter, an integrator stage and an automatic gain control are used to suppress such disturbances. The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length and duty cycle. The data signal should fulfill the following conditions: • Carrier frequency should be close to center frequency of the bandpass (e.g. 38 kHz). • Burst length should be 10 cycles/burst or longer. • After each burst which is between 10 cycles and 70 cycles a gap time of at least 14 cycles is necessary. • For each burst which is longer than 1.8 ms a corresponding gap time is necessary at some time in the data stream. This gap time should be at least 6 times longer than the burst. • Up to 800 short bursts per second can be received continuously. Some examples for suitable data format are: NEC Code (repetitive pulse), NEC Code (repetitive data), Toshiba Micom Format, Sharp Code, RC5 Code, RC6 Code, R-2000 Code, Sony Code. When a disturbance signal is applied to the TSOP362.. it can still receive the data signal. However the sensitivity is reduced to that level that no unexpected pulses will occur. Some examples for such disturbance signals which are suppressed by the TSOP362.. are: 0 16921 10 10 15 20 Time (ms) Figure 15. IR Signal from Fluorescent Lamp with high Modulation www.vishay.com 5 TSOP362.. Vishay Semiconductors Package Dimensions in mm 16629 www.vishay.com 6 Document Number 82187 Rev. 1.6, 23-Oct-06 TSOP362.. Vishay Semiconductors Reflow Soldering • Reflow soldering must be done within 72 hours while stored under a max. temperature of 30 °C, 60 % RH after opening the dry pack envelope. • Set the furnace temperatures for pre-heating and heating in accordance with the reflow temperature profile as shown in the diagram. Excercise extreme care to keep the maximum temperature below 260 °C. The temperature shown in the profile means the temperature at the device surface. Since there is a temperature difference between the component and the circuit board, it should be verified that the temperature of the device is accurately being measured. • Handling after reflow should be done only after the work surface has been cooled off. Manual Soldering • Use a soldering iron of 25 W or less. Adjust the temperature of the soldering iron below 300 °C. • Finish soldering within three seconds. • Handle products only after the temperature has cooled off. Document Number 82187 Rev. 1.6, 23-Oct-06 Vishay Leadfree Reflow Solder Profile 300 max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 200 T [°C] Assembly Instructions max. 20 s 150 max. 100 sec max. 120 sec 100 max. Ramp Up 3 °C/sec 50 max. Ramp Down 6 °C/sec 0 0 19800 50 100 150 t [sec] 200 250 300 max. 2 cycles allowed www.vishay.com 7 TSOP362.. Vishay Semiconductors Taping Version TSOP..TT 16584 www.vishay.com 8 Document Number 82187 Rev. 1.6, 23-Oct-06 TSOP362.. Vishay Semiconductors Taping Version TSOP..TR 16585 Document Number 82187 Rev. 1.6, 23-Oct-06 www.vishay.com 9 TSOP362.. Vishay Semiconductors Reel Dimensions 16734 www.vishay.com 10 Document Number 82187 Rev. 1.6, 23-Oct-06 TSOP362.. Vishay Semiconductors Leader and Trailer Trailer no devices Leader devices no devices End Start min. 200 min. 400 96 11818 Cover Tape Peel Strength According to DIN EN 60286-3 0.1 to 1.3 N 300 ± 10 mm/min 165° - 180° peel angle Label Standard bar code labels for finished goods The standard bar code labels are product labels and used for identification of goods. The finished goods are packed in final packing area. The standard packing units are labeled with standard bar code labels before transported as finished goods to warehouses. The labels are on each packing unit and contain Vishay Semiconductor GmbH specific data. Document Number 82187 Rev. 1.6, 23-Oct-06 www.vishay.com 11 TSOP362.. Vishay Semiconductors Vishay Semiconductor GmbH standard bar code product label (finished goods) Abbreviation INO SEL BATCH COD PTC QTY ACC PCK MIXED CODE xxxxxxx+ Length 18 8 3 10 3 (YWW) 2 8 Company Logo Long Bar Code Top Item-Number Plant-Code Sequence-Number Quantity Total Length Type N N X N - Length 8 2 3 8 21 Short Bar Code Bottom Selection-Code Data-Code Batch-Number Filter Total Length Type X N X - Length 3 3 10 1 17 Plain Writing Item-Description Item-Number Selection-Code LOT-/Serial-Number Data-Code Plant-Code Quantity Accepted by: Packed by: Mixed Code Indicator Origin 16942 Dry Packing Final Packing The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes. Aluminium bag Label Reel 15973 www.vishay.com 12 Document Number 82187 Rev. 1.6, 23-Oct-06 TSOP362.. Vishay Semiconductors Recommended Method of Storage Dry box storage is recommended as soon as the aluminium bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: • Storage temperature 10 °C to 30 °C • Storage humidity ≤ 60 % RH max. After more than 72 hours under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 hours at 40 °C + 5 °C/ - 0 °C and < 5 % RH (dry air/nitrogen) or 96 hours at 60 °C + 5 °C and < 5 % RH for all device containers or 24 hours at 125 °C + 5 °C not suitable for reel or tubes. An EIA JEDEC Standard JESD22-A112 Level 4 label is included on all dry bags. 16962 16943 Example of JESD22-A112 Level 4 label ESD Precaution Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the Antistatic Shielding Bag. Electro-Static Sensitive Devices warning labels are on the packaging. Vishay Semiconductors Standard Bar-Code Labels The Vishay Semiconductors standard bar-code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Telefunken specific data. Document Number 82187 Rev. 1.6, 23-Oct-06 www.vishay.com 13 TSOP362.. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 14 Document Number 82187 Rev. 1.6, 23-Oct-06