WILLAS FM120-M SE3400 THRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIERMOSFETS SOT-23 Plastic-Encapsulate RECTIFIERS -20V- 200V Pb Free Prod SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. N-Channel•Enhancement Mode Field Effect Transistor Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of FEATURE MIL-STD-19500 /228 • RoHS product for packing code suffix "G" z High dense cell design for extremely low RDS(ON) Halogen free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) SOT-23 z Exceptional on-resistance and maximum DC current capability Mechanical data z Pb-Free package available : UL94-V0is rated flame retardant • Epoxy Case : Molded plastic, SOD-123H • RoHS product for packing code suffix ”G” , • Terminals :Plated terminals, solderable per MIL-STD-750 Halogen free product for packing code suffix “H” Method 2026 0.040(1.0) 0.024(0.6) 1. GATE 2. SOURCE 0.031(0.8) Typ. 0.031(0.8) Typ. 3. DRAIN Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MARKING: R0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 VDC 20 30 40 Maximum DC Blocking Voltage 14 40 15 50 16 60 18 80 35 42 50 60 IO unless otherwise noted) Maximum ratings ( Ta=25℃ Peak Forward Surge Current 8.3 ms single half sine-wave IFSM superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) Drain-Source Voltage Range Operating Temperature Storage Temperature Gate-Source VoltageRange Continuous Drain Current CHARACTERISTICS Drain Current-Pulsed (note 1) DC Maximum Forward Voltage at 1.0A RΘJA CJ TJ TSTG 105 140 100 150 200 Value VDS -55 to +125 30 VGS ±12 ID 5.8 40 120 Unit V -55 to +150 - 65 to +175 V A IR PD 350 0.5 RθJA 357 10 TJ 150 ℃ TSTG -55~+150 ℃ Junction NOTES: Temperature 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Storage Temperature 2012-10 70 80 IDM 2012-06 56 VF A=125℃(note 2) Rated DC Blocking Voltage Thermal Resistance from Junction to@T Ambient 2- Thermal Resistance From Junction to Ambient 120 200 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- Power Dissipation Maximum Average Reverse Current at @T A=25℃ Symbol 115 150 1.0 30 Maximum Average Forward Rectified Current Typical Thermal Resistance (Note 2) Parameter 10 100 0.50 300.70 0.85 A 0.9 mW 0.92 ℃/W WILLAS ELECTRONIC CO WILLAS ELECTRONIC CORP. WILLAS FM120-M SE3400 THRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIERMOSFETS RECTIFIERS -20V- 200V SOT-23 Plastic-Encapsulate Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. power loss, high efficiency. • Lowcharacteristics Electrical (Ta=25℃ unless otherwise noted) • High current capability, low forward voltage drop. • High surge capability. Parameter Symbol Test Condition • Guardring for overvoltage protection. • Ultra high-speed switching. Off Characteristics • Silicon epitaxial planar chip, metal silicon junction. Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Min Typ Max Units 0.071(1.8) 0.056(1.4) 30 V /228 Zero gateMIL-STD-19500 voltage drain current IDSS VDS =24V,VGS = 0V • RoHS product for packing code suffix "G" Gate-source leakage currentfor packing code IGSSsuffix "H" VGS =±12V, VDS = 0V Halogen free product Mechanical On characteristics 0.012(0.3) Typ. 1 µA ±100 nA data 0.040(1.0) • Epoxy : UL94-V0 rated flame retardant VGS =10V, ID =5.8A Drain-source : Molded plastic, SOD-123H • Caseon-resistance RDS(on) VGS =4.5V, ID =5A (note 3)• Terminals :Plated terminals, solderable per MIL-STD-750 , 0.031(0.8) Typ. VGS =2.5V,ID=4A Method 2026 0.024(0.6) mΩ 40 0.031(0.8) Typ. mΩ 52 mΩ 8 S Dimensions in inches and (millimeters) Forward• tranconductance gFS Polarity : Indicated by cathode band VDS =5V, ID =5A Position : Any • Mounting Gate threshold voltage VDS =VGS, ID =250µA VGS(th) 35 0.7 1.4 V 1050 pF • Weight : Approximated 0.011 Dynamic Characteristics (note 4,5)gram Input capacitance Ciss ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS AND Vspecified. DS =15V,VGS =0V,f =1MHz Output Cotherwise oss Ratingscapacitance at 25℃ ambient temperature unless Single phase half wave, 60Hz, resistive of inductive load. Reverse transfer capacitance Crss For capacitive load, derate current by 20% Gate resistance Rg RATINGS Switching Characteristics Marking Code Maximum RMS Voltage Turn-on rise time tr Maximum DC Blocking Voltage Turn-off delay time Maximum Average Forward Rectified Current td(on) Turn-off fall time td(off) tf Peak Forward Surge Current 8.3 ms single half sine-wave VSD 12 20 13 30 VRMS 14 21 28 35 VDC 14 40 20 30 40 50 VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω 15 50 16 60 IO IFSM RΘJA IS=1A,VGS=0V CJ Operating Temperature Range TJ -55 to +125 3. Ω 10 100 ns 70 115 150 120 200 42 18 80 5 56 105 140 60 80 100 150 200 7 ns 1.0 30 40 ns 6 ns 40 120 1 V -55 to +150 - 65 to +175 1. Repetitive Rating : Pulse width limited by maximum junction temperature. Storage Temperature Range TSTG 2. pF 3.6 VRRM Typical Junction Capacitance (Note 1) Note : 77 VDS =0V,VGS =0V,f =1MHz Drain-source characteristics superimposed on diode rated load (JEDEC method) and maximum ratings Typicalforward Thermal Resistance (Note3)2) Diode voltage (note pF SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M (note 4,5) Maximumdelay Recurrent Turn-on timePeak Reverse Voltage 99 Surface Mounted on FR4 Board, t < 5 sec. CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%. VF Maximum Forward Voltage at 1.0A DC 4. Guaranteed by design, notatsubject to production testing. Maximum Average Reverse Current @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M SE3400 THRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIERMOSFETS SOT-23 Plastic-Encapsulate RECTIFIERS -20V- 200V Pb Free Prod Typical Characteristics Package outline SOD-123+ PACKAGE Features excellent power dissipation offers • Batch process Output design, Characteristics DRAIN CURRENT ID 12 8 0.146(3.7) 0.130(3.3) 4 0.012(0.3) Typ. 3 0.071(1.8) 0.056(1.4) 2 1 Mechanical data 4 Ta=25℃ (A) 16 Transfer Characteristics SOD-123H Pulsed ID (A) 20 5 DRAIN CURRENT better reverse leakage current and thermal resistance. Ta=25 VGS=7V~3V surface mounted application in ℃ order to • Low profile Pulsed optimize board space. • Low power loss, high efficiency.V =2.5V GS voltage drop. • High current capability, low forward • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. standards of • Lead-free parts meet environmental VGS=2V MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 24 • Epoxy : UL94-V0 rated flame retardant V =1.5V • Case : Molded plastic, SOD-123H 2 4 6 8 10 , • Terminals :Plated terminals, per MIL-STD-750 DRAIN TO SOURCE VOLTAGE solderable V (V) 0.040(1.0) 0.024(0.6) GS 0 0 0 0.0 0.031(0.8) Typ. 0.5 1.0 1.5 GATE TO SOURCE VOLTAGE DS 0.031(0.8) Typ. 2.5 2.0 VGS (V) Method 2026 • Polarity : Indicated by cathode band RDS(ON) : Any ID —— • Mounting Position • Weight : Approximated 0.011 gram T =25 ℃ 200 Dimensions in inches and (millimeters) RDS(ON) —— VGS 500 Ta=25℃ a Pulsed Pulsed ON-RESISTANCE RATINGS 100 VRRM Maximum Recurrent Peak Reverse Voltage 50 Maximum DC Blocking Voltage Peak 0 Forward Surge Current 8.3 ms single half sine-wave 10 15 DRAIN CURRENT ID Typical Thermal Resistance (Note 2) 20 (A) 10 Ta=25℃ Pulsed IFSM CJ 15 50 16 60 18 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 30 100 40 50 60 80 100 150 200 0 0 2 1.0 30 4 6 GATE TO SOURCE VOLTAGE 40 120 8 VGS 10 (V) -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- VF 1 Maximum Average Reverse Current at @T A=25℃ @T A=125℃ (A) ID=5A 14 40 -55 to +125 TJ VSD Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 25 RΘJA Typical Junction Capacitance (Note 1) Operating Temperature Range IS —— Storage Temperature Range 13 30 200 IO VGS=10V Maximum Average Forward Rectified Current 5 20 VDC superimposed on rated load (JEDEC method) 12 20 14 VRMS VGS=4.5V Maximum RMS Voltage 0 300 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 VGS=2.5V Marking Code RDS(ON) ON-RESISTANCE RDS(ON) (m) 150 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% (m) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 400 0.50 0.70 0.85 0.9 0.5 IR 0.92 10 IS SOURCE CURRENT NOTES: 0.1 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.01 1E-3 0.0 2012-06 2012-10 0.3 0.6 SOURCE TO DRAIN VOLTAGE 0.9 VSD (V) 1.2 WILLAS ELECTRONIC CO WILLAS ELECTRONIC CORP. WILLAS FM120-M SE3400 THRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIERMOSFETS SOT-23 Plastic-Encapsulate RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing better reverse leakage current and thermal resistance. SOT-23 SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .122(3.10) • Epoxy : UL94-V0 rated flame retardant .106(2.70) Halogen free product for packing code suffix "H" .063(1.60) .047(1.20) 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Mechanical data • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- Marking Code VRRM 12 20 13 30 14 40 15 50 16 60 VRMS 14 21 28 35 42 Maximum DC Blocking Voltage VDC 20 30 40 50 60 Maximum Average Forward Rectified Current IO IFSM .080(2.04) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage .070(1.78) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range .004(0.10)MAX. CHARACTERISTICS Rated DC Blocking Voltage VF @T A=125℃ IR .020(0.50) .012(0.30) 2- Thermal Resistance From Junction to Ambient NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 80 100 80 100 .003(0.08) 56 70 115 150 120 200 105 140 150 200 40 120 -55 to +125 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Maximum Average Reverse Current at @T A=25℃ TSTG Maximum Forward Voltage at 1.0A DC .008(0.20) 18 10 1.0 30 0.50 0.70 0.85 0.9 0.5 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 0.92 10 Dimensions in inches and (millimeters) 2012-06 2012-10 Rev.D WILLAS ELECTRONIC CO WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate MOSFETS SE3400 Ordering Information: Device PN SE3400‐T(1)G(2)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) Packing code, Tape & Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-10 WILLAS ELECTRONIC CORP.