WILLAS FM120-M+ THRU 6( FM1200-M+ SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to N-Channel Mode Field Effect Transistor optimizeEnhancement board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. DESCRIPTION • Guardring for overvoltage protection. switching. • Ultra Thehigh-speed SE3404 use advanced trench technology to provide excellent • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free and low gate charge. This device is suitable for use as a load RDS(ON) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" switch or in PWM applications.The source Halogen free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. SOT-23 0.071(1.8) 0.056(1.4) 1. GATE 2. SOURCE 3. DRAIN leads are separated to allow a Mechanical data Kelvin connection to the source,which may be used to bypass the source 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant inductance. • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750 Pb-Free package is available Method 2026 RoHS product for packing code band suffix ”G” Dimensions in inches and (millimeters) • Polarity : Indicated by cathode Halogen free product for packing code suffix “H” • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate MARKING: R4 current by 20% RATINGS Marking Code Maximum ratings (Ta=25℃ Maximum Recurrent Peak Reverse Voltageunless SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 13 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts 21 28 35 42 56 70 105 140 Volts 40 50 60 Value 80 100 150 Unit 200 Volts Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage Parameter VDC 20 Symbol 30 Maximum Average Forward Rectified Current IO IFSM Drain-source voltage PeakGate-source Forward Surge Current voltage8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Continuous drain current (t ≤10s) Typical Thermal Resistance (Note 2) Pulsed drain current *(Note 1) Typical Junction Capacitance RΘJA CJ TJ Operating Temperature Range Power dissipation Storage Temperature Range 12 20 otherwise noted)30 VRRM TSTG Thermal resistance from junction to ambient Junction temperature CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Storage temperature 1.0 ±20 30 VDS 30 VGS ID 5.8 IDM 30 120 -55 PDto +125 RθJA 40 0.35 Amps V V A A -55 to +150 W - 65 to +175 Amps ℃/W PF ℃ ℃ ℃/W 357 TJ 150 ℃ FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH VF Maximum Average Reverse Current at @T A=25℃ IR Tstg 0.50 * Repetitive rating : Pulse width @T limited by maximum junction temperature. A=125℃ Rated DC Blocking Voltage 0.70 -55~ 150 0.5 10 0.85 ℃0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 6( FM1200-M+ SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. capability, low (T forward voltage drop.otherwise noted) • High current unless Electrical characteristics a=25℃ • High surge capability. for overvoltage protection. Symbol • GuardringParameter Test Condition • Ultra high-speed switching. STATIC PARAMETERS epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meetvoltage environmental standards • Drain-source breakdown V (BR) DSSof VGS = 0V, ID = 250µA MIL-STD-19500 /228 product drain for packing code suffix "G" Zero• RoHS gate voltage current IDSS Halogen free product for packing code suffix "H" Gate-body leakage current IGSS Mechanical data 0.146(3.7) 0.130(3.3) Min Method 2026 Forward tranconductance (note 1) • Polarity : Indicated by cathode band 5 VSD Input capacitance Ciss Coss RATINGS SWITCHING PARAMETERS(note 2) Turn-on delay time Maximum Recurrent Peak Reverse Voltage Turn-on rise time Maximum RMS Voltage td(on) VRRM tr VRMS V DC td(off) Maximum Average Forward Rectified Current Turn-off fall time IO tf IFSM superimposed on rated load (JEDEC method) 1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. RΘJA Typical Thermal Resistance (Note 2) 2. These parameters have no way to verify. CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range µA ±100 nA 3 V 28 mΩ 42 mΩ VDS =5V, ID =5.8A S Dimensions in inches and (millimeters) IS=1A VDS =15V,VGS =0V,f =1MHz 1 V 820 pF 118 pF 85 pF 1.5 Ω SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum DC delay Blocking Voltage Turn-off time PeakNote Forward : Surge Current 8.3 ms single half sine-wave 1 0.031(0.8) Typ. Ratings at 25℃ ambient temperature unless otherwise specified. Reverse capacitance Crss Single phasetransfer half wave, 60Hz, resistive of inductive load. ForGate capacitive load, derate current by 20% resistance Rg VDS =0V,VGS =0V,f =1MHz Marking Code Units 0.040(1.0) 0.024(0.6) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Output capacitance 0.071(1.8) 0.056(1.4) V VGS =±20V, VDS = 0V 1 • Mounting Position : Any DYNAMIC PARAMETERS (note 2) • Weight : Approximated 0.011 gram Max VDS =30V,VGS = 0V VDS =VGS, ID =250µA • Epoxy : UL94-V0 rated flame retardant VGS(th) VGS =10V, ID = 5.8A • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. Drain-source on-resistance (note 1) RDS(on) , VGS =4.5V, ID = 4.8A • Terminals :Plated terminals, solderable per MIL-STD-750 Diode forward voltage Typ 30 Gate threshold voltage gFS 0.012(0.3) Typ. 12 20 13 30 14 40 15 50 16 60 VGS=10V,V 14 21 DS=15V, 28 35 42 56 3.1 20 30 GEN=3Ω 40 RL=2.6Ω,R 50 60 8015.1 100 -55 to +125 18 80 1.0 30 2.7 40 120 10 6.5 100 70 115 ns 150 105ns 150ns 120 200 Volts 140 Volts 200 Volts Amps ns Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 6( FM1200-M+ SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product Typical Characteristics Package outline SOD-123+ PACKAGE Features • Batch process design, excellent power dissipation offers Output Characteristics better reverse leakage current and thermal resistance. 22 • Low profile surface mounted application in order to 4.5V optimize board space. • Low 20power loss, high efficiency. V =4V 6V 10V low forward voltage drop. GS • High current capability, • High surge capability. for overvoltage protection. • Guardring 15 • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. V =3.5V • Lead-free parts meet environmental standards of GS 10 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Transfer Characteristics SOD-123H 3.0 (A) 0.071(1.8) 0.056(1.4) DRAIN CURRENT ID ID 2.0 1.5 1.0 VGS=3V VDS 0.040(1.0) 0.024(0.6) 0.5 • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , 0 • Terminals :Plated per MIL-STD-750 0 1 terminals, 2 solderable 3 4 5 DRAIN TO SOURCE VOLTAGE Method 2026 0.012(0.3) Typ. (A) 2.5 DRAIN CURRENT Mechanical data 5 o Ta=25 C 0.146(3.7) 0.130(3.3) 0.031(0.8) Typ. 0.0 1.5 1.3 (V) 0.031(0.8) Typ. 2.0 2.5 3.0 GATE TO SOURCE VOLTAGE • Polarity : Indicated by cathode band • Mounting Position : Any ID RDS(ON) —— • Weight : Approximated 0.011 gram 60 3.5 VGS 4.0 (V) Dimensions in inches and (millimeters) VGS RDS(ON) —— 70 o Ta=25 C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 50 RATINGS 30 VRRM VGS=10V Maximum Recurrent Peak Reverse Voltage 12 20 13 30 Maximum RMS20Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current 10 IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on0rated load (JEDEC method) 0 2 6 DRAIN CURRENT RΘJA ID Typical Junction Capacitance (Note 1) 28 35I =2.8A 42 40 50 40 16 60 D 18 80 10 100 115 150 120 200 Volts 70 105 140 Volts 100 150 200 Volts ID56 =3.6A 60 80 1.0 30 o Ta=25 C 8 10 —— 3 Amps CJ 4 5 Amps -55 to +125 7 8 VGS 9 10 ℃/W (V) PF -55 to +150 ℃ - 65 to +175 TSTG VSD 40 120 6 GATE TO SOURCE VOLTAGE TJ IS 15 50 30 (A) Operating Temperature Range Storage Temperature Range 14 40 20 4 Typical Thermal Resistance (Note 2) 50 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT ON-RESISTANCE ON-RESISTANCE Marking Code RDS(ON) (mΩ) RDS(ON) 60 (mΩ) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive VGS=4.5V load. For capacitive40load, derate current by 20% ℃ 10 CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC 1 Maximum Average Reverse Current at @T A=25℃ IS (A) NOTES: SOURCE CURRENT 0.70 0.85 0.5 IR @T A=125℃ Rated DC Blocking Voltage 0.50 10 0.9 0.92 Volts mAmps 0.1 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.01 2- Thermal Resistance From Junction to Ambient 1E-3 1E-4 1E-5 2012-06 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE 2012-0 1.0 1.2 WILLAS ELECTRONIC CORP. VSD (V) WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 6( FM1200-M+ SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Outline Drawing SOT-23 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .006(0.15)MIN. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data .122(3.10) .106(2.70) .063(1.60) .047(1.20) 0.012(0.3) Typ. • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage .080(2.04) Maximum RMS Voltage .070(1.78) Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Storage Temperature Range 15 50 16 60 .004(0.10)MAX. CHARACTERISTICS 18 80 14 21 28 35 42 56 20 30 40 50 60 80 IO IFSM 10 115 .008(0.20) 100 150 70 105 .003(0.08) 100 150 120 200 Volts 140 Volts 200 Volts 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ IR @T A=125℃ NOTES: .020(0.50) .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 14 40 VDC TJ Operating Temperature Range 13 30 VRMS CJ Typical Junction Capacitance (Note 1) Rated DC Blocking Voltage 12 20 RΘJA Typical Thermal Resistance (Note 2) VRRM 2- Thermal Resistance From Junction to Ambient 0.50 0.70 0.85 0.9 0.92 0.5 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) Volts mAmps 10 Dimensions in inches and (millimeters) 2012-06 2012-0 WILLAS ELECTRONIC CORP. Rev.D WILLAS ELECTRONIC CORP. 6( SOT-23 Plastic-Encapsulate MOSFETS Ordering Information: Device PN SE3404‐T(1)G(2)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) Packing code, Tape & Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-0 WILLAS ELECTRONIC CORP.