WILLAS FM120-M+ BCX53 SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V THRU FM1200-M Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TRANSISTOR (PNP) • Low profile surface mounted application in order to SOD-123H optimize board space. FEATURES • Low power loss, high efficiency. current capability, low forward voltage drop. • High package is available z Pb-Free • High surge capability. RoHS product for packing code suffix ”G” • Guardring for overvoltage protection. Halogen free product switching. for packing code suffix “H” high-speed • Ultra • Silicon epitaxial planar chip, metal silicon junction. z Low Voltage • Lead-free parts meet environmental standards of z High Current MIL-STD-19500 /228 product for packing code Sensitivity Level 1 suffix "G" • RoHS z Moisture 0.146(3.7) 0.130(3.3) SOT-89 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 1. BASE 2. COLLECTOR Halogen free product for packing code suffix "H" APPLICATIONS Mechanical data z Medium Power General Purposes • Epoxy : UL94-V0 rated flame retardant z Driver •Stages of Audio Amplifiers Case : Molded plastic, SOD-123H , MARKING:BCX53:AH, BCX53-10:AK, BCX53-16:AL • Terminals :Plated terminals, solderable per MIL-STD-750 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. EMITTER 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 by cathode band Symbol • Polarity : Indicated Parameter VCBO VCEO Value Unit -100 -80 V V -5 V -1 A 500 mW 250 ℃/W PositionVoltage : Any • Mounting Collector-Base • Weight : Approximated 0.011 gram Collector-Emitter Voltage VEBO Emitter-Base Voltage Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Current IRatings C at Collector 25℃ ambient temperature unless otherwise specified. Collector Power Dissipation PSingle phase half wave, 60Hz, resistive of inductive load. C load, derate currentFrom by 20% Thermal Resistance Junction To Ambient RFor capacitive θJA Tj Junction Marking Code RATINGS Temperature SYMBOL FM120-MH FM130-MH 150 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 Tstg Storage Temperature 13 14 -55~+150 30 40 21 ℃ 15 ℃50 28 16 60 18 80 42 60 35 otherwise specified) ELECTRICAL CHARACTERISTICS (Ta=25℃ Vunless Maximum DC Blocking Voltage 20 30 40 50 DC Maximum Average Forward Rectified Current Parameter IO Symbol T est conditions Collector-base breakdown voltage superimposed on rated load (JEDEC method) Collector-emitter breakdown voltage V(BR)CBOIFSM IC=-100µA,IE=0 IC=-10mA,IB=0 V(BR)CEO* -100 -80 Emitter-base breakdown voltage Typical Junction Capacitance (Note 1) V(BR)EBO CJ IE=-100µA,IC=0 -5 Typical Thermal Resistance (Note 2) RΘJA Operating Temperature Collector cut-off currentRange ICBO Emitter cut-off current IEBO Storage Temperature Range CHARACTERISTICS to +125 TJ VCB=-30V,I-55 E=0 TSTG @T A=125℃ VCE(sat)* IC=-0.5A,IB=-50mA Base -emitter voltage VBE* VCE=-2V, IC=-0.5A Transition frequency fT NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 70 105 140 80 100 150 200 40 120 Max Unit V V V -55 to +150 -0.1 µA -0.1 µA hFE(1)*SYMBOLVCE =-2V, ICFM130-MH =-5mA FM140-MH FM150-MH 63FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M FM120-MH 0.70 63 hFE(3)* IR VCE=-2V, IC=-0.5A Rated DC Blocking Voltage 56 - 65 to +175 VEB=-5V,IC=0 Maximum Average Reverse Current at @T A=25℃ Collector-emitter saturation voltage 120 200 0.50 hFE(2)* VF VCE=-2V, IC=-150mA Maximumgain Forward Voltage at 1.0A DC DC current 115 150 1.0 Typ 30 Min Peak Forward Surge Current 8.3 ms single half sine-wave 10 100 40 VCE=-5V,IC=-10mA, f=100MHz 0.9 0.85 250 0.5 10 50 0.92 -0.5 V -1 V MHz Test * Pulse CLASSIFICATION OF hFE(2) RANK BCX53 BCX53-10 RANGE 63–250 63–160 2012-06 2012-0 BCX53-16 100–250 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS BCX53 SOT-89 Plastic-Encapsulate Transistors Features Static Characteristic • Batch process design, excellent power dissipation offers hFE —— IC 1000 VCE= -2V better reverse leakage current and thermal resistance. COMMON SOD-123H EMITTER profile surface mounted application in order to • Low T =25℃ (mA) -350 o Ta=100 C hFE a optimize board space. -2.0mA -1.8mA efficiency. • Low power loss, high -250 low forward voltage drop. • High current capability,-1.6mA -1.4mA High surge capability. • -1.2mA -200 • Guardring for overvoltage protection. -1.0mA -150 • Ultra high-speed switching. -0.8mA Silicon epitaxial planar chip, metal silicon junction. • -0.6mA -100 of • Lead-free parts meet environmental standards -0.4mA -50MIL-STD-19500 /228 • RoHS product for packing code suffix "G" IB=-0.2mA -0 Halogen free product for packing code suffix -0 -1 -2 -3 -4 -5 "H" -6 COLLECTOR-EMITTER Mechanical data VOLTAGE VCE DC CURRENT GAIN COLLECTOR CURRENT IC -300 0.146(3.7) 0.130(3.3) 100 o 0.071(1.8) 0.056(1.4) 10 -1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -10 COLLECTOR CURRENT (V) -800 Method 2026 T =25℃ a • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram -400 -600 Ta=100℃ VCEsat —— β=10 Marking Code IC (mA) 0.031(0.8) Typ. Dimensions in inches and (millimeters) -200 a 12 20 Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC Maximum 100Average Forward Rectified Current IO IFSM IC fT TRANSITION FREQUENCY Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) 50 CJ Typical Junction Capacitance (Note 1) VCE=-5V Storage Temperature Range 13 30 14 40 14 21 28 20 30 40 Cob /15 Cib -100 -1000 ——16 VCB / VEB18 50 10 100 60 80 35 42 56 f=1MHz 70 IE=0 / IC=0 50 60 80 Ta=25 C o 100 115 150 120 200 105 140 150 200 1.0 Cib 30 100 40 120 Cob 10 -55 to +150 - 65 to +175 TSTGo T =25 C a 0 -40 CHARACTERISTICS -60 COLLECTOR CURRENT Maximum Forward Voltage at 1.0A DC IC —— -80 IC (mA) VF VBE Maximum Average Reverse Current at @T A=25℃ -1000 -1 0.50 IR @T A=125℃ Rated DC Blocking Voltage 1 -0.1 -100 -10 -20 REVERSE FM160-MH VOLTAGE FM180-MH V (V) FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH Pc 0.75 COLLECTOR POWER DISSIPATION Pc (W) -20 -10 -55 to +125 TJ Operating Temperature Range -0 -1 1000 CAPACITANCE —— (MHz) fT Ta=25℃ C VRRM IC (mA) 0.040(1.0) 0.024(0.6) IC (mA) FM150-MHCURRENT FM160-MHIC FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MHCOLLECTOR 150 Maximum Recurrent Peak Reverse Voltage -100 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. COLLECTOR CURRENT -1000 (mA) -300 -0 -0.1 (pF) COLLECTOR CURRENT RATINGS IC MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS -100 T =100℃ Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. -0 For capacitive load, derate current-10by 20% -0.1 -1 -100 -1000 NOTES: -100 0.031(0.8) Typ. -200 0.012(0.3) Typ. Ta=25 C flameI retardant • Epoxy : UL94-V0 rated VBEsat —— C -400 -1000 : Molded plastic, SOD-123H • Case β=10 , • Terminals :Plated terminals, solderable per MIL-STD-750 Pb Free Produc Typical Characteristics Package outline -400 THRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ 2- Thermal Resistance From Junction to Ambient o Ta=100 C -10 Ta=25℃ -1 0.70 —— 0.9 0.85 Ta 0.92 0.5 10 0.50 0.25 VCE=-2V -0.1 2012-06 -0 0.00 -200 -400 -600 BASE-EMITTER VOLTAGE 2012-0 -800 VBE(mV) -1000 0 25 50 75 WILLAS ELECTRONIC COR AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP. WILLAS BCX53 SOT-89 Plastic-Encapsulate Transistors FM120-M+ THRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-89 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .181(4.60) Mechanical data retardant • Epoxy : UL94-V0 rated flame.173(4.39) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .061REF Method 2026 0.040(1.0) 0.024(0.6) .063(1.60) 0.031(0.8) Typ. 0.031(0.8) Typ. .055(1.40) (1.55)REF • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .167(4.25) Marking Code .154(3.91) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage 12 20 V RRM .023(0.58) 13 30 14 VRMS .016(0.40) 21 28 20 30 40 Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO IFSM .047(1.2) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) .031(0.8) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range TJ .060TYP (1.50)TYP CHARACTERISTICS Maximum Forward Voltage at 1.0A DC TSTG 40 16 60 18 80 35 42 50 60 50 10 100 115 150 120 200 56 70 105 140 80 100 150 200 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 .197(0.52) .013(0.32) .017(0.44) FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH.014(0.35) .118TYP (3.0)TYP VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage .102(2.60) .091(2.30) 14 15 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M @T A=125℃ 0.50 0.70 0.85 0.9 0.5 IR 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 Rev.C COR WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V BCX53 THRU FM1200-M Pb Free Produc SOD-123+ PACKAGE Features FM120-M+ Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to SOD-123H optimize board space. loss, high efficiency. • Low power Ordering Information: 0.146(3.7) 0.130(3.3) • High current capability, low forward voltage drop. Packing capability. • High surge Device PN (3) (1) (2) Guardring for overvoltage protection. • Part Number –SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel • Ultra high-speed switching. Note: (1) CASE:SOT‐89 epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 RoHS product for packing code suffix "G" • (3) CLASSIFICATION OF h FE RANK Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ***Disclaimer*** ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. WILLAS reserves the right to make changes without notice to any product Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% specification herein, to make corrections, modifications, enhancements or other SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS changes. WILLAS or anyone on its behalf assumes no responsibility or liability Marking Code 12 13 14 15 16 18 10 115 120 for any errors or inaccuracies. Data sheet specifications and its information 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS contained are intended to provide a product description only. "Typical" parameters Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC which may be included on WILLAS data sheets and/ or specifications can Maximum Average Forward Rectified Current IO 1.0 and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM WILLAS does not assume any liability arising out of the application or superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA use of any product or circuit. 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ 65 to +175 Storage Temperature Range TSTG WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 0.92 VF 0.50 0.70 0.85 applications where a failure or malfunction of component or circuitry may directly 0.5 Maximum Average Reverse Current at @T A=25℃ IR or indirectly cause injury or threaten a life without expressed written approval 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. such applications do so at their own risk and shall agree to fully indemnify WILLAS 2- Thermal Resistance From Junction to Ambient Inc and its subsidiaries harmless against all claims, damages and expenditures. Maximum Forward Voltage at 1.0A DC 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.