ϮEϳϬϬϮ<tdϭ ϯϴ0mA EͲĐŚĂŶŶĞů^ŵĂůů^ŝŐŶĂůDK^&d - ϲ0V SOT-ϯ23 Package SOT–323 (SC–70) Features • ESD Protected • Low RDS(on) • Surface Mount Package • This is a Pb−Free Device • We declare that the material of product are Halogen Free and Simplified Schematic compliance with RoHS requirements. Gate • S- Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Drain−to−Source Voltage Gate−to−Source Voltage t<5s TA = 25°C TA = 85°C Symbol Value Unit VDSS 60 V VGS ±20 ID V 320 230 380 270 TA = 25°C TA = 85°C Power Dissipation (Note 1) Steady State t<5s PD Pulsed Drain Current (tp = 10 ms) IDM 1.5 A Operating Junction and Storage Temperature Range TJ, TSTG −55 to +150 °C Source Current (Body Diode) IS 300 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C ESD 2000 V Gate−Source ESD Rating (HBM, Method 3015) MARKING DIAGRAM & PIN ASSIGNMENT mA Pr el Drain Current (Note 1) Steady State (Top View) Marking Code : 6. MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Rating Drain 2 ry Source im ina Applications • Low Side Load Switch • Level Shift Circuits • DC−DC Converter • Portable Applications i.e. DSC, PDA, Cell Phone, etc. 3 mW 300 420 V(BR)DSS RDS(on) MAX ID MAX (Note 1) 60 V 2.3 W @ 10 V 380 mA 2.7 W @ 5.0 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RqJA 417 °C/W Junction−to−Ambient − t ≤ 5 s (Note 1) RqJA 300 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2014.08 www.willas.com.tw Rev. 第1頁 ϮEϳϬϬϮ<tdϭ ϯϴ0mA EͲĐŚĂŶŶĞů^ŵĂůů^ŝŐŶĂůDK^&d - ϲ0V SOT-ϯ23 Package ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Units OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS 71 VGS = 0 V, VDS = 60 V VGS = 0 V, VDS = 50 V Gate−to−Source Leakage Current IGSS V mV/°C TJ = 25°C 1 TJ = 125°C 500 TJ = 25°C 100 nA ±10 mA VDS = 0 V, VGS = ±20 V mA Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = VDS, ID = 250 mA VGS(TH)/TJ RDS(on) gFS CISS COSS CRSS Threshold Gate Charge Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 2 4.0 VGS = 5.0 V, ID = 50 mA 2.7 VDS = 5 V, ID = 200 mA VGS = 0 V, f = 1 MHz, VDS = 25 V VGS = 4.5 V, VDS = 10 V; ID = 500 mA V mV/°C 2.3 QG(TOT) QG(TH) 1.2 VGS = 10 V, ID = 500 mA Pr el Total Gate Charge VGS(TH) im ina Gate Threshold Voltage ry ON CHARACTERISTICS (Note 2) W 80 mS 34 pF 3 2.2 nC 0.71 0.1 0.32 0.16 SWITCHING CHARACTERISTICS, VGS = V (Note 3) Turn−On Delay Time td(ON) Rise Time Turn−Off Delay Time tr td(OFF) Fall Time ns 3.8 VDS = 10 V, VGEN = 10 V, ID = 500 mA tf 3.4 19 12 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 115 mA TJ = 25°C TJ = 85°C 1.2 V 0.7 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% 3. Switching characteristics are independent of operating junction temperatures 2014.08 www.willas.com.tw Rev. 第2頁 ϮEϳϬϬϮ<tdϭ ϯϴ0mA EͲĐŚĂŶŶĞů^ŵĂůů^ŝŐŶĂůDK^&d - ϲ0V SOT-ϯ23 Package TYPICAL ELECTRICAL CHARACTERISTICS 0.4 VGS= 5,6,7.8,9.10 V 4.0 V 0.6 0.4 0.5 1.0 o Tj=125 C o Tj=25 C 1.5 ry 2.5 2.0 o Tj=-55 C 0.0 3.0 0 1 2 3 4 5 6 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics Pr el VDS, DRAIN−TO−SOURCE VOLTAGE (V) 5.0 4.5 4.0 3.5 VGS= 10V O TJ= 125 C O TJ= 85 C 3.0 2.5 O 2.0 1.5 TJ= 25 C O TJ= -55 C 1.0 0.5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 2014.08 0.2 im ina 0.0 0.0 0.3 0.1 3.0 V 0.2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 0.8 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 1.0 6.0 5.5 VGS= 5.0V O TJ= 125 C 5.0 4.5 O TJ= 85 C 4.0 3.5 O TJ= 25 C 3.0 2.5 2.0 O 1.5 TJ= -55 C 1.0 0.5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Drain Current and Temperature Figure 4. On−Resistance vs. Drain Current and Temperature www.willas.com.tw Rev. 第3頁 ϮEϳϬϬϮ<tdϭ ϯϴ0mA EͲĐŚĂŶŶĞů^ŵĂůů^ŝŐŶĂůDK^&d - ϲ0V SOT-ϯ23 Package TYPICAL ELECTRICAL CHARACTERISTICS 2.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 10 ID = 0.5 A ID= 0.5 A 9 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.8 8 7 6 5 3 VGS= 10 V 1.0 0.8 2 3 4 5 6 7 8 9 o RON5.0V@Tj= 25 C: 2.7 Ω 0.4 -50 -25 10 o RON10V@Tj= 25 C: 2.3 Ω im ina 1 0 25 50 75 100 125 150 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance vs. Gate−to−Source Voltage Figure 6. On−Resistance Variation with Temperature Pr el 60 Ciss 45 40 35 30 25 20 15 Coss 10 5 Crss 0 5 10 15 20 25 30 VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 50 0 4.5 Frequency = 1 MHz 55 2014.08 1.2 0.6 2 1 VGS= 5.0 V 1.4 ry 4 1.6 4.0 VDS= 10 V IDS= 0.5 A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge www.willas.com.tw Rev. 第4頁 ϮEϳϬϬϮ<tdϭ ϯϴ0mA EͲĐŚĂŶŶĞů^ŵĂůů^ŝŐŶĂůDK^&d - ϲ0V SOT-ϯ23 Package TYPICAL ELECTRICAL CHARACTERISTICS 1 o Tj= 150 C o ry Tj =25 C im ina IS, SOURCE CURRENT (A) 2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Pr el Figure 9. Diode Forward Voltage vs. Current 2014.08 www.willas.com.tw Rev. 第5頁 ϮEϳϬϬϮ<tdϭ ϯϴ0mA EͲĐŚĂŶŶĞů^ŵĂůů^ŝŐŶĂůDK^&d - ϲ0V SOT-ϯ23 Package Outline Drawing .004(0.10)MIN. SOT-323 .056(1.40) .096(2.45) .078(2.00) Pr eli m ina ry .054(1.35) .045(1.15) .087(2.20) .070(1.80) .010(0.25) .003(0.08) .047(1.20) .016(0.40) .008(0.20) .043(1.10) .032(0.80) .004(0.10)MAX. Dimensions in inches and (millimeters) Rev.D 2014.08 www.willas.com.tw Rev. 第6頁 ϯϴ0mA EͲĐŚĂŶŶĞů^ŵĂůů^ŝŐŶĂůDK^&d - ϲ0V SOT-ϯ23 ϮEϳϬϬϮ<tdϭ Package SOT-323 Pr eli m .35(0.90) ina ry Suggested Soldering Pad Layout .039(1.00) .023(0.60) Dimensions in inches and (millimeters) 2014.08 www.willas.com.tw RevA Rev. 第7頁 ϯϴ0mA EͲĐŚĂŶŶĞů^ŵĂůů^ŝŐŶĂůDK^&d - ϲ0V SOT-ϯ23 ϮEϳϬϬϮ<tdϭ Package Ordering Information: Device PN ϮEϳϬϬϮ<tdϭ -T (1) G(2)-WS Note: (1) Packing code, Tape & Reel Packing Packing Tape&Reel: ϯ Kpcs/Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ina ry ***Disclaimer*** Pr el im WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2014.08 www.willas.com.tw Rev. 第8頁