2N7002KDW

2N7002KDW
Dual N-Channel MOSFET
P b Lead(Pb)-Free
3
2
1
D2
G1
S1
6 5
Features:
1
* ESD Protected
* Low RDS(on)
* Surface Mount Package
2
4
3
SOT-363(SC-88)
Applications:
S2
G2
D1
4
5
6
* Low Side Load Switch
* Level Shift Circuits
* DC−DC Converter
* Portable Applications i.e. DSC, PDA, Cell Phone, etc.
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Symbol
Rating
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
320
230
mA
Drain Current (Note 1)
Steady State
TA = 25°C
TA = 85°C
ID
380
270
TA = 25°C
TA = 85°C
t<5s
Power Dissipation (Note 1)
Steady State
t<5s
PD
300
420
mW
Pulsed Drain Current (tp = 10 µs)
IDM
1.5
A
Operating Junction and Storage
Temperature Range
TJ, TSTG
- 55 to +150
°C
Source Current (Body Diode)
IS
300
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
ESD
2000
V
Gate−Source ESD Rating
(HBM, Method 3015)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Thermal Charactieristics
Characteristic
Symbol
Max
Junction−to−Ambient − Steady State (Note 1)
R θJA
417
Junction−to−Ambient − t ≤ 5 s (Note 1)
R θJA
300
Unit
°C/W
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
Device Marking
2N7002KDW=72K
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2N7002KDW
Electrical Characteristics @ TJ =25 unless otherwise specified
Characteristic
Symbol
Min
Typ
MAX
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 µA
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
60
V(BR)DSS/TJ
TJ = 25°C, VGS = 0 V, VDS = 60 V
TJ = 125°C, VGS = 0 V, VDS = 60 V
TJ = 25°C,
Gate−to−Source Leakage Current
V
71
1
500
IDSS
VGS = 0 V, VDS = 50 V
IGSS
VDS = 0 V, VGS = ±20 V
mV/°C
µA
100
nA
±10
µA
2.5
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 µA
Negative Threshold Temperature
Coefficient
1.0
VGS(TH)/TJ
Drain−to−Source On Resistance
VGS = 10 V, ID = 500 mA
VGS = 5.0 V, ID = 50 mA
Forward Transconductance
VDS = 5 V, ID = 200 mA
4.0
2.3
RDS(on)
gFS
mV/°C
2.7
80
Ω
mS
CHARGES AND CAPACITANCES
Input Capacitance
VGS = 0 V, f = 1 MHz, VDS = 25 V
CISS
34
Output Capacitance
VGS = 0 V, f = 1 MHz, VDS = 25 V
COSS
3
Reverse Transfer Capacitance
VGS = 0 V, f = 1 MHz, VDS = 25 V
CRSS
2.2
Total Gate Charge
VGS = 4.5 V, VDS = 10 V, ID = 500 mA
QG(TOT)
0.71
Threshold Gate Charge
VGS = 4.5 V, VDS = 10 V, ID = 500 mA
QG(TH)
0.1
Gate−to−Source Charge
VGS = 4.5 V, VDS = 10 V, ID = 500 mA
QGS
0.32
Gate−to−Drain Charge
VGS = 4.5 V, VDS = 10 V; ID = 500 mA
QGD
0.16
td(ON)
3.8
pF
nC
SWITCHING CHARACTERISTICS, VGS = V (Note 3)
Turn−On Delay Time
VDS = 10 V, VGEN = 10 V, ID = 500 mA
Rise Time
VDS = 10 V, VGEN = 10 V, ID = 500 mA
tr
3.4
Turn−Off Delay Time
VDS = 10 V, VGEN = 10 V, ID = 500 mA
td(OFF)
19
Fall Time
VDS = 10 V, VGEN = 10 V, ID = 500 mA
tf
12
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
TJ = 25°C, VGS = 0 V, IS = 115 mA
TJ = 85°C, VGS = 0 V, IS = 115 mA
VSD
1.4
0.7
V
2. Pulse Test: pulse width ≤ 300 µs, duty cycle≤ 2%
3. Switching characteristics are independent of operating junction temperatures
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2N7002KDW
0.4
0.8
VGS= 5,6,7.8,9.10 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1.0
4.0 V
0.6
0.4
0.3
0.2
o
0.0
0.0
0.5
1.0
1.5
2.0
Tj=25 C
0.1
3.0 V
0.2
o
Tj=125 C
o
Tj=-55 C
2.5
0.0
3.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0
O
TJ= 125 C
4.0
3.5
O
TJ= 85 C
3.0
2.5
O
TJ= 25 C
2.0
1.5
O
TJ= -55 C
1.0
0.5
5.5
WEITRON
5
6
VGS= 5.0V
O
TJ= 125 C
5.0
4.5
O
TJ= 85 C
4.0
3.5
O
TJ= 25 C
3.0
2.5
2.0
O
1.5
TJ= -55 C
1.0
0.5
0.0
0.1
ID, DRAIN CURRENT (A)
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4
6.0
0.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Figure 3. On −Resistance vs. Drain Current and
Temperature
3
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE ( )
RDS(on), DRAIN−TO−SOURCE RESISTANCE ( )
4.5
VGS= 10V
2
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On −Region Characteristics
5.0
1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
ID, DRAIN CURRENT (A)
Figure 4. On −Resistance vs. Drain Current and
Temperature
3/5
30-Jun-2014
10
2.0
ID= 0.5 A
ID = 0.5 A
9
1.8
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ( )
2N7002KDW
8
7
6
5
4
3
1.6
VGS= 5.0 V
1.4
1.2
VGS= 10 V
1.0
0.8
o
2
1
RON10V@Tj= 25 C: 2.3 Ω
0.6
1
2
3
4
5
6
7
8
9
0.4
-50
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
o
RON5.0V@Tj= 25 C: 2.7 Ω
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On −Resistance vs. Gate −to −Source
Voltage
Figure 6. On −Resistance Variation with
Temperature
4.5
Frequency = 1 MHz
55
C, CAPACITANCE (pF)
50
Ciss
45
40
35
30
25
20
15
Coss
10
4.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
60
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
Crss
0
5
10
15
20
25
IDS= 0.5 A
3.5
5
0
VDS= 10 V
30
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate −to −Source and
Drain −to −Source Voltage vs. Total Charge
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance V ariation
IS, SOURCE CURRENT (A)
2
1
o
Tj= 150 C
o
Tj =25 C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward V oltage vs. Current
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2N7002KDW
SOT-363 Outline Dimensions
Unit:mm
A
SOT-363
6
5
4
B C
1
2
D
3
E
H
K
J
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L
M
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Dim
A
B
C
D
E
H
J
K
L
M
Min
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 REF
0.40
0.30
2.20
1.80
0.10
0.80
1.10
0.25
0.40
0.10
0.25
30-Jun-2014