MNST3906F3T5(SOT 1123)

WEW'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌ
SOT-ϭϭ23
DN^dϯϵϬϲ&ϯdϱ
Package
The0NST3906F3T5 device is designed for general purpose
amplifier applications and is housed in the SOT−1123 surface
mount package. This device is ideal for low−power surface
mount applications where board space is at a premium.
SOT−1123
3
1
CASE 524AA
STYLE 1
Features
•
•
•
•
2
hFE, 100−300
Low VCE(sat), ≤ 0.4 V
Reduces Board Space
This is a Pb−Free Device
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−40
Vdc
Collector −Base Voltage
VCBO
−40
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
IC
−200
mAdc
Collector Current − Continuous
Symbol
Max
Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD
(Note 1)
290
2.3
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
(Note 1)
432
°C/W
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD
(Note 2)
347
2.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
(Note 2)
360
°C/W
Thermal Resistance,
Junction−to−Lead 3
R q JL
(Note 2)
143
°C/W
TJ, Tstg
−55 to
+150
°C
Junction and Storage Temperature Range
3M
3
M
THERMAL CHARACTERISTICS
Characteristic
MARKING DIAGRAM
= Device Code
= Date Code
ORDERING INFORMATION
Device
MNST3906F3T5
Package
Shipping†
SOT−1123 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 100 mm2 1 oz, copper traces.
2. 500 mm2 1 oz, copper traces.0
2014.0ϵ
www.willas.com.tw
Rev. A
第1頁
WEW'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌ
SOT-ϭϭ23
DN^dϯϵϬϲ&ϯdϱ
Package
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
−40
−
Vdc
Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
V(BR)CBO
−40
−
Vdc
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
−5.0
−
Vdc
Collector Cutoff Current (VCE = 30 Vdc, VBE = 3.0 Vdc)
ICEX
−
−50
nAdc
60
80
100
60
30
−
−
300
−
−
−
−
−0.25
−0.4
−0.65
−
−0.85
−0.95
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
250
−
MHz
Output Capacitance (VCB = −5.0 V, IE = 0 mA, f = 1.0 MHz)
Cobo
−
4.5
pF
Input Capacitance (VEB = −0.5 V, IE = 0 mA, f = 1.0 MHz)
Cibo
−
10.0
pF
Noise Figure
(VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 kW, f = 1.0 kHz)
NF
−
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = −3.0 Vdc, VBE = 0.5 Vdc)
td
−
35
Rise Time
(IC = −10 mAdc, IB1 = −1.0 mAdc)
tr
−
35
Storage Time
(VCC = −3.0 Vdc, IC = −10 mAdc)
ts
−
250
Fall Time
(IB1 = IB2 = −1.0 mAdc)
tf
−
50
ns
ns
3. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
0.35
350
150°C (5.0 V)
IC/IB = 10
hFE, DC CURRENT GAIN (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.40
VCE(sat) = 150°C
0.30
0.25
0.20
25°C
0.15
0.10
−55°C
0.05
150°C (1.0 V)
250
200
150
100
25°C (5.0 V)
25°C (1.0 V)
−55°C (5.0 V)
−55°C (1.0 V)
50
0
0
0.0001
1
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
2014.0ϵ
300
0.0001
0.001
0.1
0.01
IC, COLLECTOR CURRENT (A)
1
Figure 2. DC Current Gain vs. Collector Current
www.willas.com.tw
Rev. A
第2頁
WEW'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌ
SOT-ϭϭ23
Package
1.1
1.1
VBE(on), BASE−EMITTER TURN−ON
VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
0.4 150°C
VCE = 2.0 V
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
0.4 150°C
0.3
0.3
0.0001
0.001
0.01
0.1
0.0001
1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
1.0
9.0
100 mA
0.9
Cibo, INPUT CAPACITANCE (pF)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
DN^dϯϵϬϲ&ϯdϱ
0.8
80 mA
0.7
60 mA
0.6
40 mA
0.5
0.4
0.3
20 mA
0.2
0.1
0
IC = 10 mA
0.0001
8.0
7.0
6.0
Cib
5.0
4.0
3.0
0.001
0.01
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Ib, BASE CURRENT (A)
Veb, EMITTER BASE VOLTAGE (V)
Figure 5. Saturation Region
Figure 6. Input Capacitance
4.5 5.0
Cobo, OUTPUT CAPACITANCE (pF)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
Cob
1.5
1.0
0
5.0
10
15
20
25
30
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
2014.0ϵ
www.willas.com.tw
Rev. A
第3頁
WEW'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌ
SOT-ϭϭ23
DN^dϯϵϬϲ&ϯdϱ
Package
PACKAGE DIMENSIONS
SOT−1123
−X−
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
−Y−
1
E
3
2
b
e
0.08 (0.0032) X Y
A
c
L
HE
DIM
A
b
b1
c
D
E
e
HE
L
MILLIMETERS
MIN
NOM MAX
0.34
0.37
0.40
0.15
0.20
0.25
0.10
0.15
0.20
0.07
0.12
0.17
0.75
0.80
0.85
0.55
0.60
0.65
0.35
0.95
1.00
1.05
0.05
0.10
0.15
SOLDERING FOOTPRINT*
0.35
INCHES
NOM
0.015
0.008
0.006
0.005
0.031
0.024
0.014
0.037 0.039
0.002 0.004
MIN
0.013
0.006
0.004
0.003
0.030
0.022
MAX
0.016
0.010
0.008
0.007
0.033
0.026
0.041
0.006
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.30
0.25
0.90
0.40
DIMENSIONS: MILLIMETERS
2014.0ϵ
www.willas.com.tw
Rev. A
第4頁
WEW'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌ
SOT-ϭϭ23
Package
DN^dϯϵϬϲ&ϯdϱ
Ordering Information: Device PN (2)
MNST3906F3T5 -T(1)
H -WS
Note: (1) Packing code, Tape & Reel Packing Packing Tape&Reel: 8 Kpcs/Reel (2) Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2014.0ϵ
www.willas.com.tw
Rev. A
第5頁