S-L2N7002KWT1G Small Signal MOSFET 380 mAmps, 60 Volts N

LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
380 mAmps, 60 Volts N–Channel SOT–323
●FEATURES
1)ESD Protected
2)Low RDS(on)
3)Surface Mount Package
4)This is a Pb−Free Device
5)We declare that the material of product compliant with
RoHS requirements and Halogen Free.
6)S- Prefix for Automotive and Other Applications Requiring
U nique Site and Control Change Requirements; AEC- Q 101
Qualified and PPAP Capable.
L2N7002KWT1G
S-L2N7002KWT1G
3
1
2
SOT– 323 (SC-70)
●APPLICATIONS
1)Low Side Load Switch
2)Level Shift Circuits
3)DC−DC Converter
4)Portable Applications i.e. DSC, PDA, Cell Phone, etc.
Simplified Schematic
Gate
1
●DEVICE MARKING AND ORDERING INFORMATION
Device
L2N7002KWT1G
Marking
SK
3
Shipping
3000/Tape&Reel
Source
●MAXIMUM RATINGS(Tj= 25℃ unless otherwise stated))
Symbol
Value
Rating
Unit
VDSS
Drain−to−Source Voltage
60
Vdc
VGS
Gate−to−Source Voltage
±20
Vdc
Drain Current
– Steady State
TA = 25°C
TA = 85°C
TA = 25°C
–t<5s
TA = 85°C
Power Dissipation (Note 1)
Steady State
t<5s
Pulsed Drain Current (tp = 10 µ
s)
Operating
Junction and Storage
Temperature Range
Source Current (Body Diode)
Lead Temperature for Soldering
Purposes (1/8 " from case for 10
s)
Gate−Source ESD Rating
(HBM, Method 3015)
ID
2
(Top View)
mAdc
320
230
380
270
PD
mW
IS
300
420
1.5
−55 to
+150
300
mA
TL
260
°C
ESD
2000
V
IDM
TJ, TSTG
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
June,2015
Rev.D 1/5
Drain
LESHAN RADIO COMPANY, LTD.
L2N7002KWT1G,S-L2N7002KWT1G
●THERMAL CHARACTERISTICS
Unit
Max
Value
Characteristic
RθJA
417
Junction−to−Ambient − Steady
°C/W
State
(Note
1)
RθJA
300
Junction−to−Ambient − t ≤5 s
(Note 1)
●ELECTRICAL CHARACTERISTICS (Ta= 25℃)
Test Condition
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown
V(BR)DSS VGS = 0 V, ID = 250 µA
Voltage
V(BR)DSS/T
Drain−to−Source Breakdown
Voltage Temperature Coefficient
J
Zero Gate Voltage Drain Current
IDSS
Drain−to−Source On Resistance
RDS(on)
60
V
71
mV/C
TJ = 25C
1
TJ = 125C
500
TJ = 25C
100
nA
VDS = 0 V, VGS = 20 V
10
µA
2.5
V
mV/C
VGS = 0 V,
VDS = 60 V
VGS = 0 V,
VDS = 50 V
IGSS
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2.)
VGS(TH)
Gate Threshold Voltage
Negative Threshold Temperature
VGS(TH)/TJ
Coefficient
Min. Typ. Max. Unit
VGS = VDS, ID = 250 µA
1
4
VGS = 10 V, ID = 500 mA
VGS = 5.0 V, ID = 50 mA
VDS = 5 V, ID = 200 mA
Gfs
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS
Output Capacitance
COSS
= 25 V
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 10 V;
QG(TH)
Threshold Gate Charge
QGS
Gate−to−Source Charge
ID = 500 mA
QGD
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS ,VGS = V (Note 3)
td(ON)
Turn−On Delay Time
VDS = 10 V, VGEN = 10 V,
Rise Time
tr
ID = 500 mA
td(OFF)
Turn−Off Delay Time
tf
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 0 V,
TJ = 25C
VSD
Forward Diode Voltage
IS = 115
TJ = 85C
mA
2. Pulse Test: pulse width ≤ 300μs, duty cycle ≤ 2%
2.3
2.7
80
µA
Ω
mS
34
3
2.2
0.71
0.1
0.32
0.16
pF
nC
3.8
3.4
19
12
ns
1.2
V
0.7
3. Switching characteristics are independent of operating junction temperatures
June,2015
Rev.D 2/5
LESHAN RADIO COMPANY, LTD.
L2N7002KWT1G,S-L2N7002KWT1G
ELECTRICAL CHARACTERISTIC CURVES
0.4
VGS= 5,6,7.8,9.10 V
4.0 V
0.6
0.4
0.0
0.0
0.5
1.0
1.5
2.0
0.3
0.2
o
Tj=125 C
o
Tj=25 C
0.1
3.0 V
0.2
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
0.8
o
Tj=-55 C
2.5
0.0
3.0
0
1
2
3
4
5
6
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5.0
4.5
4.0
3.5
VGS= 10V
O
TJ= 125 C
O
TJ= 85 C
3.0
2.5
O
2.0
1.5
TJ= 25 C
O
TJ= -55 C
1.0
0.5
0.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
1.0
6.0
5.5
VGS= 5.0V
O
TJ= 125 C
5.0
4.5
O
TJ= 85 C
4.0
3.5
O
TJ= 25 C
3.0
2.5
2.0
O
1.5
TJ= -55 C
1.0
0.5
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Temperature
June,2015
Rev.D 3/5
LESHAN RADIO COMPANY, LTD.
L2N7002KWT1G,S-L2N7002KWT1G
2.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
10
ID = 0.5 A
ID= 0.5 A
9
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.8
8
7
6
5
4
3
VGS= 5.0 V
1.4
1.2
VGS= 10 V
1.0
0.8
o
RON10V@Tj= 25 C: 2.3 Ω
0.6
2
1
1.6
1
2
3
4
5
6
7
8
9
o
RON5.0V@Tj= 25 C: 2.7 Ω
0.4
-50 -25
10
0
25
50
75 100 125 150
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance vs. Gate−to−Source
Voltage
Figure 6. On−Resistance Variation with
Temperature
4.5
60
Frequency = 1 MHz
VGS, GATE−TO−SOURCE VOLTAGE (V)
55
C, CAPACITANCE (pF)
50
Ciss
45
40
35
30
25
20
15
Coss
10
5
0
Crss
0
5
10
15
20
25
30
4.0
VDS= 10 V
IDS= 0.5 A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
IS, SOURCE CURRENT (A)
2
1
o
Tj= 150 C
o
Tj =25 C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
June,2015
Rev.D 4/5
LESHAN RADIO COMPANY, LTD.
L2N7002KWT1G,S-L2N7002KWT1G
SC−70 (SOT−323)
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
3
E
HE
1
2
b
e
A
0.05 (0.002)
c
A2
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
SOLDERING FOOTPRINT*
0.65
0.025
XX
1.9
0.075
0.095
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ ”,
may or may not be present.
0.9
0.035
June,2015
0.016
0.010
0.087
0.053
0.055
1
M
SCALE 10:1
0.079
MAX
0.040
0.004
XXM
0.65
0.025
0.7
0.028
0.012
0.004
0.071
0.045
0.047
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
GENERIC
MARKING DIAGRAM
L
A1
MIN
0.032
0.000
mm inches
Rev.D 5/5