2N7002KLT1 380mA N-Channel Small Signal MOSFET - 60V SOT-23 PACKAGE PRIMARY CHARACTERISTICS 60 V RDS(on) MAX ID MAX (Note 1) 2.3 W @ 10 V MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 380 mA Simplified Schematic 2.7 W @ 5.0 V RK W V(BR)DSS Gate 1 Gate RK W 1 2 3 Source = Device Code =Month Code Source Drain 2 (Top View) FEATURES • • • • • APPLICATIONS (6'3URWHFWHG /RZ5'6RQ 6XUIDFH0RXQW3DFNDJH 7KLVLVD3Eí)UHH'HYLFH We declare that the material of product are Halogen Free and compliance with RoHS requirements. • • • • /RZ6LGH/RDG6ZLWFK /HYHO6KLIW&LUFXLWV '&í'&&RQYHUWHU 3RUWDEOH$SSOLFDWLRQVLH'6&3'$&HOO3KRQHHWF MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Drain Current (Note 1) Steady State t<5s ID TA = 25°C TA = 85°C TA = 25°C TA = 85°C 320 230 mA 380 270 Power Dissipation (Note 1) Steady State t<5s mW PD 300 420 Pulsed Drain Current (tp = 10 ms) IDM Operating Junction and Storage Temperature Range TJ, TSTG 1.5 A −55 to +150 °C IS 300 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Gate−Source ESD Rating (HBM, Method 3015) ESD 2000 V Source Current (Body Diode) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Junction−to−Ambient − Steady State (Note 1) Junction−to−Ambient − t ≤ 5 s (Note 1) Symbol RqJA Max 417 RqJA 300 Unit °C/W 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2014.11 www.willas.com.tw Rev. >0ϭ P1 2N7002KLT1 380mA N-Channel Small Signal MOSFET - 60V ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Units OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS 71 VGS = 0 V, VDS = 60 V VGS = 0 V, VDS = 50 V Gate−to−Source Leakage Current IGSS V mV/°C TJ = 25°C 1 TJ = 125°C 500 TJ = 25°C 100 nA ±10 mA 2.5 V VDS = 0 V, VGS = ±20 V mA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS 1.0 4.0 mV/°C VGS = 10 V, ID = 500 mA 2.3 VGS = 5.0 V, ID = 50 mA 2.7 VDS = 5 V, ID = 200 mA W mS 80 CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD pF 34 VGS = 0 V, f = 1 MHz, VDS = 25 V 3 2.2 nC 0.71 VGS = 4.5 V, VDS = 10 V; ID = 500 mA 0.1 0.32 0.16 SWITCHING CHARACTERISTICS, VGS = V (Note 3) Turn−On Delay Time td(ON) Rise Time Turn−Off Delay Time tr td(OFF) Fall Time ns 3.8 VDS = 10 V, VGEN = 10 V, ID = 500 mA tf 3.4 19 12 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 115 mA TJ = 25°C TJ = 85°C 1.4 V 0.7 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% 3. Switching characteristics are independent of operating junction temperatures 2014.11 www.willas.com.tw Rev. >0ϭ P2 2N7002KLT1 380mA N-Channel Small Signal MOSFET - 60V TYPICAL ELECTRICAL CHARACTERISTICS 0.4 VGS= 5,6,7.8,9.10 V 4.0 V 0.6 0.4 0.0 0.0 0.5 1.0 1.5 2.0 0.2 o Tj=125 C o Tj=25 C o Tj=-55 C 2.5 0.0 3.0 0 1 2 3 4 5 6 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 5.0 4.5 4.0 3.5 VGS= 10V O TJ= 125 C O TJ= 85 C 3.0 2.5 O 2.0 1.5 TJ= 25 C O TJ= -55 C 1.0 0.5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 2014.11 0.3 0.1 3.0 V 0.2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 0.8 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 1.0 6.0 5.5 VGS= 5.0V O TJ= 125 C 5.0 4.5 O TJ= 85 C 4.0 3.5 O TJ= 25 C 3.0 2.5 2.0 O 1.5 TJ= -55 C 1.0 0.5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Drain Current and Temperature Figure 4. On−Resistance vs. Drain Current and Temperature www.willas.com.tw Rev. >0ϭ P3 2N7002KLT1 380mA N-Channel Small Signal MOSFET - 60V TYPICAL ELECTRICAL CHARACTERISTICS 2.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 10 ID = 0.5 A ID= 0.5 A 9 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.8 8 7 6 5 4 3 1 2 3 4 5 6 7 8 9 1.2 VGS= 10 V 1.0 0.8 o RON10V@Tj= 25 C: 2.3 Ω o RON5.0V@Tj= 25 C: 2.7 Ω 0.4 -50 -25 10 0 25 50 75 100 125 150 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance vs. Gate−to−Source Voltage Figure 6. On−Resistance Variation with Temperature 4.5 60 Frequency = 1 MHz VGS, GATE−TO−SOURCE VOLTAGE (V) 55 C, CAPACITANCE (pF) 50 Ciss 45 40 35 30 25 20 15 Coss 10 5 0 2014.11 VGS= 5.0 V 1.4 0.6 2 1 1.6 Crss 0 5 10 15 20 25 30 4.0 VDS= 10 V IDS= 0.5 A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge www.willas.com.tw Rev. >0ϭ P4 2N7002KLT1 380mA N-Channel Small Signal MOSFET - 60V TYPICAL ELECTRICAL CHARACTERISTICS IS, SOURCE CURRENT (A) 2 1 o Tj= 150 C o Tj =25 C 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 2014.11 www.willas.com.tw Rev. >0ϭ P5 2N7002KLT1 380mA N-Channel Small Signal MOSFET - 60V Outline Drawing .102(2.64) .063(1.60) .047(1.20) .122(3.10) .106(2.70) .083(2.10) .006(0.15)MIN. SOT-23 .008(0.20) .003(0.08) .95 TYP .080(2.04) .070(1.78) .020(0.50) .012(0.30) .049(1.25) .035(0.89) .004(0.10)MAX. Dimensions in inches and (millimeters) 2014.11 www.willas.com.tw Rev.E Rev. >0ϭ P6 2N7002KLT1 380mA N-Channel Small Signal MOSFET - 60V SOT-23 Suggested Soldering Pad Layout 0.0355 (0.90) 0.0435 0.0315 (0.80) (1.10) 0.0435 (1.10) Dimensions in inches and (millimeters) 2014.11 www.willas.com.tw RevA Rev. >0ϭ P7 2N7002KLT1 380mA N-Channel Small Signal MOSFET - 60V Ordering Information: Device PN 2N7002KLT1 ‐T(1) H(2)‐WS Note: (1) Packing code, Tape & Reel Packing Packing Tape&Reel: 3 Kpcs/Reel (2) Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. This is the preliminary specification. WILLAS products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2014.11 www.willas.com.tw Rev. >0ϭ P8