SMG2301
-2.6A, -20V,RDS(ON) 130m Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A suffix of "-C" specifies halogen & RoHS compliant
SC-59
A
Description
L
The SMG2301 is universally preferred for all commercial
S
2
industrial surface mount application and suited for low
3
Top View
B
1
voltage applications such as DC/DC converters.
D
G
Features
J
C
* Super high dense cell design for extremely low RDS(ON)
K
H
* Reliable and rugged
Drain
Gate
Applications
Min
Max
A
2.70
3.10
B
1.40
1.60
C
1.00
1.30
D
0.35
0.50
G
1.70
2.10
H
0.00
0.10
J
0.10
0.26
K
0.20
0.60
L
0.85
1.15
S
2.40
2.80
All Dimension in mm
D
Source
Dim
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
G
Marking : 2301
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
3
Pulsed Drain Current
Total Power Dissipation
-20
V
±12
V
-2.6
A
o
ID@TA=70 C
-2.1
A
IDM
-10
A
1.38
W
0.01
W/ C
ID@TA=25 C
o
PD@TA=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Unit
o
VGS
3
Ratings
Tj, Tstg
o
o
C
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient 3
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
Rthj-a
Ratings
90
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SMG2301
-2.6A, -20V,RDS(ON) 130mΩ
P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 oC)
o
Drain-Source Leakage Current (Tj=70 C)
Static Drain-Source On-Resistance
2
Symbol
Min.
Typ.
Max.
Unit
BVDSS
-20
_
_
V
BVDS/ Tj
_
-0.1
_
V/ C
VGS(th)
-0.5
_
_
V
VDS=VGS, ID=-250uA
IGSS
_
_
±100
nA
VGS=± 12V
_
_
-1
uA
VDS=-20V,VGS=0
_
_
-10
uA
VDS=-16V,VGS=0
_
_
130
IDSS
RDS(ON)
_
_
190
5.2
10
1.36
_
0.6
_
Total Gate Charge2
Qg
_
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Td(ON)
_
5.2
_
Tr
_
9.7
_
Td(Off)
_
19
_
Tf
_
29
_
_
295
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Forward Transconductance
_
_
o
mΩ
Test Condition
VGS=0V, ID=-250uA
o
Reference to 25 C ,ID=-1mA
VGS=-5.0V, ID=-2.8A
VGS=-2.8V, ID=-2A
nC
ID=-2.8A
VDS=-6.0V
VGS=-5.0V
VDS=-15V
ID=-1A
nS
VGS=-10V
RG=6Ω
RD=15Ω
_
170
_
65
_
pF
VGS=0V
VDS=-6V
VDS=-5V, ID=-2.8A
Crss
_
Gfs
_
4.4
_
S
Symbol
Min.
Typ.
Max.
Unit
_
_
-1.2
V
_
_
-1
A
-10
A
f=1.0MHz
Source-Drain Diode
Parameter
2
VSD
Continuous Source Current (Body Diode)
Is
Forward On Voltage
Pulsed Source Current (Body Diode)
ISM
_
_
Test Condition
IS=-1.6A, VGS=0V.
VD=VG=0V, VS=-1.2V
G
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SMG2301
Elektronische Bauelemente
-2.6A, -20V,RDS(ON) 130mΩ
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 4
SMG2301
Elektronische Bauelemente
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
-2.6A, -20V,RDS(ON) 130mΩ
P-Channel Enhancement Mode Power Mos.FET
Any changing of specification will not be informed individual
Page 4 of 4