WILLAS SOT-523 FM120-M+ 2SC4617 THRU FM1200-M+ Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers SOT-523 SOD-123H better reverse leakage current and thermal resistance. TRANSISTOR (NPN)mounted application in order to • Low profile surface optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. FEATURES • High surge capability. z • Guardring Low Cob:Cob= 2.0pF(Typ) for overvoltage protection. Ultra high-speed switching. • z Complement to 2SA1774 • Silicon epitaxial planar chip, metal silicon junction. z • Lead-free Moisture Sensitivity Level 1standards of parts meet environmental 0.146(3.7) 1. BASE 0.130(3.3) 0.012(0.3) Typ. 2. EMITTER 3. COLLECTOR 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) • Epoxy : UL94-V0 rated flame retardant : Molded plastic, SOD-123H • Case Symbol Parameter , • Terminals :Plated terminals, solderable per MIL-STD-750 Collector-Base Voltage VCBO VCEO 0.040(1.0) 0.024(0.6) Method 2026 Collector-Emitter Voltage • Polarity : Indicated by cathode band Emitter-Base Voltage VEBO • Mounting Position : Any Collector Current IC • Weight : Approximated 0.011 gram -Continuous PC TJ Collector Power Dissipation Junction Temperature Ratings at 25℃ ambient temperature unless otherwise specified. Storage Temperature Tstgphase half wave, 60Hz, Single resistive of inductive load. For capacitive load, derate current by 20% 12 Maximum RecurrentParameter Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward breakdown Rectified Current Collector-emitter voltage IOV(BR)CEO IFSM V(BR)EBO Peak Forward Surge Current 8.3 ms single half sine-wave Emitter-base breakdown voltage superimposed on rated load (JEDEC method) Symbol20 V(BR)CBO RΘJA Typical Thermal Resistance (Note 2) Collector cut-off current ICBO Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ I EBO Emitter cut-off current Storage Temperature Range TSTG DC current gain CHARACTERISTICS Maximum Forward Voltage atsaturation 1.0A DC Collector-emitter voltage Maximum Average Reverse Current at @T A=25℃ 50 V 7 V 150 mA 150 mW 150 ℃ -55-150 ℃ RatedTransition DC Blocking frequency Voltage VF V 14 15 16 60 18 80Min 10 Typ 100 115 Max 150 120 Unit 200 Volts 21 28 35 42 56 70 105 140 Volts 30 40 50 60 80 100 150 200 Volts IC=50uA, IE=0 IE=50uA, IC=0 -55 to +125 CE(sat) IC=50mA,0.50 IB=5mA V Amps V 7 V -55 to +150 VEB=7V, IC=0 VCE=6V, IC=1mA 50 40 120 VCB=60V, IE=0 hFE 60 1.0 30 IC=1mA, IB=0 - 65 to +175 120 0.70 0.1 μA 0.1 μA Amps ℃/W PF ℃ ℃ 560 fT 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Cob 0.9 0.4 0.85 0.5 IR @T A=125℃ Collector output capacitance 13 Test 30 conditions 40 50 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT NOTES: V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Collector-base breakdown voltage 60 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) RATINGS Unit 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Marking Code Value 0.031(0.8) Typ. VCE=12V, IC=2mA, f=100MHz 10 0.92 V Volts mAmps 180 MHz VCB=12V, IE=0, f=1MHz 3.5 pF 2- Thermal Resistance From Junction Ambient CLASSIFICATION OFto h FE Rank Range Marking 2012-06 2013-12 Q R S 120-270 180-390 270-560 BQ BR BS WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SC4617 THRU FM1200-M+ SOT-523 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Typical Characteristics Features • Batch process design, excellent power dissipation offers better reverse leakage current andVthermal resistance. I —— C CE profile surface mounted application in order to • Low 200 COMMON EMITTER optimize board space. SOD-123H hFE —— 1000 T =25 ℃ • Low power loss, high efficiency. 1/0.9/0.8mA current capability, low forward voltage drop. • High160 0.7mA • High surge capability. 0.6mA • Guardring for overvoltage protection. 0.5mA high-speed switching. • Ultra120 • Silicon epitaxial planar chip, metal silicon junction.0.4mA • Lead-free parts meet environmental standards of (mA) Ta=100 ℃ Ta=25 ℃ hFE DC CURRENT GAIN 0.3mA 0.2mA Mechanical data 40 0.012(0.3) Typ. 300 IC COLLECTOR CURRENT • COMMON EMITTER VCE=6V 0.146(3.7) 0.130(3.3) a MIL-STD-19500 /228 80 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" IC 0.071(1.8) 0.056(1.4) 100 30 0.040(1.0) 0.024(0.6) IB=0.1mA • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , 0 • Terminals :Plated terminals, solderable per MIL-STD-750 0 4 8 12 16 20 24 COLLECTOR-EMITTER VOLTAGE Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any VCEsat —— • Weight : Approximated 0.011 gram 1000 VCE 0.031(0.8) Typ. 10 0.1 0.3 (V) 0.031(0.8) Typ. 3 1 10 COLLECTOR CURREMT 100 30 IC 200 (mA) Dimensions in inches and (millimeters) Ic IC 100 —— VBE VCE=6V COMMON EMITTER I /I =10 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS C B Marking Code RATINGS Maximum Recurrent Peak Reverse Voltage Ta=100 ℃ Maximum RMS Voltage Maximum DC Blocking Voltage 30 Ta=25 ℃ VRMS 14 21 VDC 20 30 superimposed on 10 rated load (JEDEC method) 1 10 3 100 30 —— 200 IR @T A=125℃ IE=0 / IC=0 C CAPACITANCE 10 Cob 3 2013-12 1 0.1 0.3 1 10 115 Ta=25 ℃ 100 150 120 200 Volts 42 56 70 105 140 Volts 60 80 100 150 200 Volts 0.2 Amps Amps 0.4 0.6 40 BASE-EMMITER VOLTAGE 120 0.8 VBE 1.0 ℃/W (V) PF -55 to +150 - 65 to +175 Pc —— 0.50 o Ta=25 C COLLECTOR POWER DISSIPATION Pc (mW) VF 2- Thermal Resistance From Junction to Ambient 2012-06 18 80 1.0 30 0.1 0.0 Ta=100 ℃ ℃ ℃ Ta f=1MHz FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH ib 1- Measured at 1 MHZ and applied reverseCvoltage of 4.0 VDC. 50 -55 to +125 (pF) NOTES: 35 200 Maximum Average Reverse Current at @T A=25℃ 16 60 TSTG Maximum Forward Voltage at 1.0A DC 30 Rated DC Blocking Voltage 40 VCB/VEB CHARACTERISTICS 1 15 50 TJ Operating Temperature Range Cob/Cib 28 3 0.3 Typical Thermal Resistance (NoteCOLLECTOR 2) ΘJA CURRENT Ic R(mA) Typical Junction Capacitance (Note 1) CJ 100 14 40 IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave (mA) 13 30 Maximum Average Forward Rectified Current Storage Temperature Range IC VRRM 12 20 0.3 10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 100 0.1 30 COLLCETOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ratings at 25℃ ambient temperature unless otherwise specified. 300 wave, 60Hz, resistive of inductive load. Single phase half For capacitive load, derate current by 20% 10 3 REVERSE VOLTAGE V 30 (V) 100 0.70 0.9 0.85 0.5 150 0.92 Volts mAmps 10 100 50 0 0 25 75 100 125 150 WILLAS ELECTRONIC CORP. 50 AMBIENT TEMPERATURE Ta (℃ ) WILLAS ELECTRONIC CORP. WILLAS SOT-523 FM120-M+ 2SC4617 THRU FM1200-M+ Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-523 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 .004(0.10)MIN. • RoHS product for packing code suffix "G" • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .067(1.70) .059(1.50) .035(0.90) .028(0.70) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) .069(1.75) .057(1.45) Halogen free product for packing code suffix "H" Mechanical data 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS Marking Code .043(1.10) VRRM VRMS .035(0.90) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Operating Temperature Range .004(0.10)MAX. Storage Temperature Range CHARACTERISTICS 50 18 80 115 150 120 200 Volts 14 21 28 35 42 56 70 105 140 20 30 40 50 60 80 100 150 200 Volts IO IFSM TJ 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG VF Maximum Average Reverse Current at @T A=25℃ 40 .008(0.20) 10 .004(0.10) 100 16 60 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC 13 30 Volts CJ Typical Junction Capacitance (Note 1) Rated DC Blocking Voltage 12 20 RΘJA Typical Thermal Resistance (Note 2) .014(0.35) .010(0.25) 14 15 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT @T A=125℃ IR .014(0.35) NOTES: .006(0.15) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 .035(0.90) .028(0.70) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2013-12 Rev.D WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS SOT-523 FM120-M+ 2SC4617 THRU FM1200-M+ Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. Pb Free Product Package outline SOD-123H 0.146(3.7) Information: power loss, high efficiency. • LowOrdering 0.130(3.3) 0.012(0.3) Typ. low forward voltage drop. • High current capability, Device PN Packing • High surge capability. (3) (1) (2) ‐T G ‐WS Tape&Reel: 3 Kpcs/Reel overvoltage protection. • Guardring for2SC4617 x 0.071(1.8) high-speed switching. • UltraNote: (1) Packing code, Tape & Reel Packing 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” MIL-STD-19500 /228 product (3) for CLASSIFICATION OF h FE RANK packing code suffix "G" • RoHS Halogen free product for packing code suffix "H" Mechanical data : UL94-V0 rated flame retardant • Epoxy : Molded plastic, SOD-123H • Case , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. WILLAS reserves the right to make changes without notice to any product Single phase half wave, 60Hz, resistive of inductive load. specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS 12 13 14 15 16 18 10 115 120 for any errors or inaccuracies. Data sheet specifications and its information 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM contained are intended to provide a product description only. "Typical" parameters Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC which may be included on WILLAS data sheets and/ or specifications can Amps Maximum Average Forward Rectified Current IO 1.0 and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amps WILLAS does not assume any liability arising out of the application or superimposed on rated load (JEDEC method) ℃/W use of any product or circuit. 40 Typical Thermal Resistance (Note 2) RΘJA PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175 Storage Temperature Range TSTG ℃ Marking Code life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Volts 0.9 Maximum Forwardapplications where a failure or malfunction of component or circuitry may directly Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmps or indirectly cause injury or threaten a life without expressed written approval 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Inc and its subsidiaries harmless against all claims, damages and expenditures . 2012-06 WILLAS ELECTRONIC CORP. 2013-12 WILLAS ELECTRONIC CORP.