WILLAS FM120-M+ DTC144TCA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-23 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. Pb-Free• Guardring package for is overvoltage available protection. switching. • Ultra high-speed RoHS product for packing code suffix ”G” Silicon epitaxial planar chip, metal silicon junction. • Halogen free product for packing code suffix “H” parts environmental standards of • Lead-free Epoxy meets UL 94 V-0meet flammability rating MIL-STD-19500 /228 Moisure Sensitivity Level 1 product for packing code suffix "G" • RoHS Built-in bias resistors enable the configuration of an inverter circuit Halogen free product for packing code suffix "H" without connecting external input resistors (see equivalent circuit) Mechanical data The bias resistors consist of thin-film resistors with complete Epoxy flame isolation•to allow: UL94-V0 negativerated biasing ofretardant the input. They also have the advantage of almost completely eliminating parasitic effects • Case : Molded plastic, SOD-123H , Only the• on/off conditions need to be set for operation, making Terminals :Plated terminals, solderable per MIL-STD-750 device design easy 0.146(3.7) 0.130(3.3) x x 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band Parameter Symbol Dimensions in inches and (millimeters) Value • Weight : Approximated 0.011 gram Collector-Base Voltage VCBO 50 Collector-Emitter Voltage VCEO 50 MAXIMUM RATINGS AND ELECTRICAL Emitter-Base voltage VEBO 5 at 25℃ ambient temperature Iunless otherwise specified. CollectorRatings Current-Continuous 100 C Single phase half wave, 60Hz, resistive of inductive load. Collector Dissipation P 200 C capacitive load, derate current by 20% For Junction Temperature TJ Storage Temperature Range Marking Code RATINGS TSTG Maximum Recurrent Peak Reverse Voltage Electrical Characteristics 150 Unit V V CHARACTERISTICS V mA .110(2.80) Absolute Maximum Position : Any • MountingRatings 0.040(1.0) 0.024(0.6) .080(2.04) .070(1.78) .083(2.10) • • x 0.071(1.8) 0.056(1.4) .006(0.15)MIN. • 0.012(0.3) Typ. .122(3.10) .106(2.70) .063(1.60) .047(1.20) Features mW .008(0.20) к .003(0.08) FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH к -55~150 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 VRRM 35 42 56 70 105 140 Maximum RMS Voltage .004(0.10)MAX. Parameter Min VRMS Typ 14 Max 21 Unit 28 Collector-Base Breakdown Voltage Maximum DC Blocking Voltage 20--30 V 40 50 60 80 100 150 200 50 VDC--V(BR)CBO (IC=50uA, IE=0) Maximum Average Forward Rectified Current I O 1.0 Collector-Emitter Breakdown Voltage 50 ----V V(BR)CEO .020(0.50) (IC=1mA, IB=0) Peak Forward Surge Current 8.3 ms single half sine-wave .012(0.30) Emitter-Base Breakdown Voltage FSM 30 I 5 ----V V(BR)EBO (IE=50uA, C=0) load (JEDEC method) superimposed on Irated Collector Cut-off Current uA 40 in inches and (millimeters) --- RΘJA--0.5 ICBO Typical Thermal Resistance (Note 2) Dimensions (VCB=50V, IE=0) 120 Typical Junction Capacitance (Note 1) C J Emitter Cut-off Current IEBO ----0.5 -55 touA +125 -55 to +150 (VEB=4V, IC=0) Range Operating Temperature TJ DC Current Gain 65 to +175 Storage Temperature Range TSTG 100 300 600 --hFE (VCE=5V, IC=1mA) Collector-Emitter Saturation Voltage Suggested Solder ----0.3 V VCE(sat) CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH (IC=5mA, IB=0.5mA) Pad Layout K¡0.50 R1 Maximum InputForward resistance 32.9 61.1 0.9 Voltage at 1.0A DC 0.92 VF 47 0.70 0.85 .031 Transition Frequency .8000.5 250 --MHz fT Maximum Average Reverse Current at @T A=25℃--IR (VCE=10V, IE=-5mA, f=100MHz) 10 @T A=125℃ Rated DC Blocking Voltage .055(1.40) .035(0.89) Sym *Marking: 06 NOTES: .035 .900 .079 2.000 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. inches mm 2- Thermal Resistance From Junction to Ambient .037 .950 2012-06 2012-0 .037 .950 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC144TCA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features Typical Characteristics • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board Staticspace. Characteristic • Low power loss, high efficiency. COMMON drop. • High current capability, low forward voltage EMITTER 10uA T =25℃ • High surge capability. 9uA protection. • Guardring for overvoltage 8uA • Ultra high-speed switching. • Silicon epitaxial planar chip,7uAmetal silicon junction. standards of • Lead-free parts meet environmental 6uA 5 hFE 1000 —— IC 0.146(3.7) 0.130(3.3) Ta=100℃ IC COLLECTOR CURRENT 3 • 2 MIL-STD-19500 /228 5uA RoHS product for packing code suffix "G" Halogen free product for packing code4uA suffix "H" Mechanical data 1 hFE Ta=25℃ DC CURRENT GAIN (mA) a 4 0.071(1.8) 0.056(1.4) 100 3uA 0.040(1.0) 0.024(0.6) 2uA • Epoxy : UL94-V0 rated flame retardant I =1uA • Case : Molded plastic, SOD-123H , 2 4 6 8 • Terminals :Plated terminals, solderable per MIL-STD-750 COLLECTOR-EMITTER VOLTAGE V (V) COMMON EMITTER VCE= 5V B 0 0 • Polarity : Indicated by cathode band VCEsat —— IC : Any • Mounting Position • Weight : Approximated 0.011 gram IC 100 (mA) —— VBE Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 VDC β=10 20 Ta=25℃ Rectified 10 Current COLLECTOR CURREMT IC (mA) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated loadC (JEDEC ——method) V ob 10 Typical Thermal Resistance (Note 2) CB (pF) C C @T A=125℃ T =2 5℃ a 1 10 100 115 150 120 200 56 70 105 140 150 200 COMMON EMITTER =5V V 80 100 CE 1.0 30 —— Ta PD 10 100 40 120 -55 to +150 - 65 to +175 DTC144TCA 0.70 IR 0.9 0.85 0.92 0.5 10 100 50 0 20 30 V 0.50 150 2- Thermal Resistance From Junction to Ambient 0.1 2012-06 0.1 0.1 250 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. REVERSE VOLTAGE 60 300 NOTES: 10 42 50 -55 to +125 VF Maximum Average Reverse Current at @T A=25℃ 0 35 40 18 80 200 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH 1 Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 28 30 TSTG ob CHARACTERISTICS 16 60 21 Ta=25 ℃ TJ Storage Temperature Range 15 50 350 IE=0CJ Operating Temperature Range 14 40 BASE-EMMITER VOLTAGE VBE (V) RΘJA f=1MHz Typical Junction Capacitance (Note 1) CAPACITANCE IO IFSM 100 131 30 POWER DISSIPATION PD (mW) Average IC SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Ta=100 ℃ 1 Forward 10 T =1 00℃ a RATINGS 100 2012-0 IC 100 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 10 0.1 Maximum COLLECTOR CURRENT MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum DC Blocking Voltage 10 (mA) 1000 Marking Code 0.031(0.8) Typ. 1 Dimensions in inches and (millimeters) COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 3000 0.031(0.8) Typ. 10 0.1 CE Method 2026 0.012(0.3) Typ. (V) 40 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 150 (℃ ) WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC144TCA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Features Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) • High current capability, (1) low (2)forward voltage drop. DTC144TCA –T G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability. • High for overvoltage protection. • Guardring Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM use of any product or circuit. superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ Marking Code - 65 to +175 Storage Temperature Range TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR 10 @T A=125℃ Rated of WILLAS. Customers using or selling WILLAS components for use in DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . Maximum Forward Voltage at 1.0A DC 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.