WILLAS FM120-M+ BAS21T THRU FM1200-M+ SOT-523 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features SWITCHING DIODE • Batch process design, excellent power dissipation offers FEATURES better reverse leakage current and thermal resistance. Low profile Speed surface mounted application in order to z Fast•Switching optimize board space. z For General Purpose Switching loss, high efficiency.Applications • Low power High current capability, low forward voltage drop. z High•Conductance • High surge capability. z Pb-Free package is available • Guardring for overvoltage protection. RoHS product for packing code suffix ”G” high-speed switching. • Ultra Silicon epitaxial planar chip, metal silicon junction. • Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of z Moisture Sensitivity Level 1 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" SOT-523 SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1 0.071(1.8) 0.056(1.4) 3 2 Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy MARKING :T3 : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 2026 Maximum RatingsMethod @Ta=25℃ • Polarity : Indicated by cathode band Parameter • Mounting Position : Any Peak Repetitive Reverse 0.011 Voltage • Weight :Peak Approximated gram 0.031(0.8) Typ. ina ry 0.031(0.8) Typ. Unit VRRM Working Peak Reverse Voltage VRWM MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS DC Blocking Voltage VR 250 V Ratings at 25℃ ambient temperature unless otherwise specified. Forward Continuous Current IFM 400 mA IO 200 mA im Limit Single phase half wave, 60Hz, resistive of inductive load. Average Rectified Output Current For capacitive load, derate current by 20% Non-Repetitive PeakRATINGS Forward Surge Current SYMBOL Marking Code 2.5 FM180-MH FM1100-MH FM1150-MH FM1200-MH U @ t = FM130-MH 1.0µs FM140-MH FM150-MH FM160-MH FM120-MH Maximum RMS Voltage VRMS 14 21 28 VDC 20 30 40 RθJA 50 60 833 TJ 1.0 -55~+150 ℃ TSTG 30 -55~+150 ℃ Pr el VRRM Maximum Average Forward Rectified Current Operating Junction Temperature Peak Forward Surge Current 8.3 ms single half sine-wave Storage Temperature superimposed on rated load (JEDEC method) IO IFSM PD 15 50 16 0.5 60 18 80 10 100 115 150 120 200 V 35 42 56 70 105 140 V 80 100 ℃/W 150 200 V TJ Operating Temperature Range Symbol TSTG Parameter Storage Temperature Range CHARACTERISTICS Reverse breakdown voltage Maximum Forward Voltage at 1.0A DC Forward NOTES: Test -Min 65 to +175 VF VF voltage Reverse recovery time 2012-06 2012-1 conditions 0.50 IR @T A=125℃ 2Thermal Resistance From Junction to Ambient Total capacitance mW A A ℃ -55 to +150 Max Unit FM1200-MH U SYMBOL IR=FM130-MH 100μA FM140-MH FM150-MH FM160-MH 250 FM180-MH FM1100-MH FM1150-MH V V(BR)FM120-MH 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 40 120 -55 to +125 Maximum Reverse Current at @T A=25℃ = VR IR ReverseAverage voltage leakage current Rated DC Blocking Voltage 150 Typical Thermal Resistance (Note 2) RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Typical Junction Capacitance (Note 1) CJ A Maximum Recurrent Peak Reverse Voltage Maximum Resistance DC Blocking Voltage Thermal Junction to Ambient 14 40 IFSM 12@ t = 1.0s 13 20 30 Power Dissipation Dimensions in inches and (millimeters) Symbol 200V IF=100mA IF=200mA = VR 0V,f 1MHz C= T t rr IF=IR=30mA,Irr=0.1XIR, RL=100Ω 0.70 0.85 0.5 10 100 1 1.25 0.9 0.92 nA V m V 5 pF 50 ns WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAS21T THRU FM1200-M+ SOT-523 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-523 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 Method 2026 .059(1.50) 0.031(0.8) Typ. Dimensions in inches and (millimeters) ina • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) ry .035(0.90) .028(0.70) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750.067(1.70) .069(1.75) .057(1.45) Halogen free product for packing code suffix "H" Mechanical data .004(0.10)MIN. • RoHS product for packing code suffix "G" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pr eli m RATINGS Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 21 VDC 20 30 Maximum DC Blocking Voltage .043(1.10) .035(0.90) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range .004(0.10)MAX. CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ 2- Thermal Resistance From Junction to Ambient 28 35 42 40 50 60 18 10 .008(0.20) 80 100 .004(0.10) 56 70 80 100 115 150 120 200 V 105 140 V 150 200 V 1.0 30 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U IR .014(0.35) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .006(0.15) NOTES: 16 60 TSTG VF Maximum Forward Voltage at 1.0A DC 15 50 IO IFSM RΘJA Typical Thermal Resistance (Note 2) .014(0.35) 13 14 .010(0.25) 30 40 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 0.50 0.70 0.85 0.9 0.92 0.5 .035(0.90) .028(0.70) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 10 V m Dimensions in inches and (millimeters) 2012-06 2012-1 WILLAS ELECTRONIC Rev.D CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAS21TTHRU FM1200-M+ SOT-523 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE FeaturesInformation: Ordering • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Device PN • Low profile surface mounted (1) (2) application in order to BAS21T‐T optimize board space. G ‐WS Package outline Packing SOD-123H Tape&Reel: 3 Kpcs/Reel 0.146(3.7) loss, high efficiency. • Low power Note: (1) Packing code, Tape&Reel Packing 0.130(3.3) • High current capability, low forward voltage drop. surge capability. • High(2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. ina ry • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per***Disclaimer*** MIL-STD-750 Pr el im Method 2026 WILLAS reserves the right to make changes without notice to any product Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band specification herein, to make corrections, modifications, enhancements or other • Mounting Position : Any changes. WILLAS or anyone on its behalf assumes no responsibility or liability • Weight : Approximated 0.011 gram for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS contained are intended to provide a product description only. "Typical" parameters Ratings at 25℃ ambient temperature unless otherwise specified. which may be included on WILLAS data sheets and/ or specifications can Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% and do vary in different applications and actual performance may vary over time. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS WILLAS does not assume any liability arising out of the application or Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volt V RRM use of any product or circuit. Volt 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Volt Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS products are not designed, intended or authorized for use in medical, Am Maximum Average Forward Rectified Current IO 1.0 life‐saving implant or other applications intended for life‐sustaining or other related Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Am superimposed on rated load (JEDEC method) applications where a failure or malfunction of component or circuitry may directly ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA or indirectly cause injury or threaten a life without expressed written approval PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range T J ℃ of WILLAS. Customers using or selling WILLAS components for use in - 65 to +175 Storage Temperature Range TSTG ℃ such applications do so at their own risk and shall agree to fully indemnify WILLAS CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH Inc and its subsidiaries harmless against all claims, damages and expenditures . FM1100-MH FM1150-MH FM1200-MH UNI VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage NOTES: @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volt 10 mAm 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.