WILLAS FM120-M+ THRU 1N4151 300mA SMALL SIGNAL SWITCHING DIODE - 50V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V DO-35 PACKAGE SOD-123+ PACKAGE FM1200-M+ Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to 1N4151 SIGNAL DIODE optimize board space. • Low power loss, high efficiency. capability, low forward voltage • High current Absolute Maximum Ratings (Ta=25 °C) drop. High surge capability. • Items Symbol Ratings Unit • Guardring for overvoltage protection. Reverse Voltage VR 50 V • Ultra high-speed switching. Reverse Recovery trr 2 ns • Silicon epitaxial planar chip, metal silicon junction. Time • Lead-free parts meet environmental standards of MIL-STD-19500 Power Dissipation/228 P 500 mW for packing code suffix "G" • RoHS product 3.33mW/ C (25 C) ° ° Halogen Current free product for packing suffix "H" mA Forward IF code 300 Mechanical data Junction Temp. Tj -55 to 150 °C flame retardant • Epoxy : UL94-V0 rated Tstg -55 to 150 °C Operating/Storage • Case : Molded plastic, SOD-123H , Mechanical Data terminals, solderable per MIL-STD-750 • Terminals :Plated 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Dimensions (DO-35) .022(0.55) .018(0.45) 0.071(1.8) 0.056(1.4) 1.02(26.0) MIN. .153(3.6) .132(3.0) 0.040(1.0) 0.024(0.6) .087(2.2) 0.031(0.8) Typ. 0.031(0.8) Typ. .067(1.7) Items Materials Method 2026 Package DO-35by cathode band • Polarity : Indicated Case Hermetically sealed glass • Mounting Position : Any Lead/Finish Double stud/Solder Plating • Weight : Approximated 0.011 gram Chip Glass Passivated 1.02(26.0) MIN. Dimensions in inches and (millimeters) Dime nsions in mi llime ters Moisture Sensitivity Level 1 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Polarity: Color band denotes cathode end Ratings at 25℃ ambient temperature unless otherwise specified. Characteristics °C) load. SingleElectrical phase half wave, 60Hz, resistive(Ta=25 of inductive Ratings For capacitive load, derate current by 20% Symbol Ratings Unit Breakdown Voltage BVFM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH V SYMBOL FM120-MH FM130-MH FM140-MH FM1200-MH UNIT RATINGS IR= 5.0uA 75 Marking Code 12 13 14 15 16 18 10 115 120 Peak Forward Surge Current IFsurge50 1.0 80 A 150 20 30 40 60 100 200 Maximum Recurrent Peak Reverse Voltage PW= 1sec. Volts VRRM Maximum Forward Voltage VF V Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS IF= 50mA 1.0 80 Volts Maximum DC Blocking Voltage 20 30 40 50 60 100 150 200 VDC Maximum Reverse Current IR uA Amps Maximum Average Forward Rectified Current IO 1.0 VR= 50V 0.050 VR= 20V, Tj=8.3 150 C half sine-wave IFSM 50 Peak Forward Surge Current ms°single 30 Amps superimposed on ratedJunction load (JEDEC method) Maximum Capacitance Cj pF ℃/W VR= Resistance 0, f= 1 MHz 40 2 Typical Thermal (Note 2) RΘJA PF 120 Max Reverse Recovery trr ns Typical Junction Capacitance (Note 1) Time CJ -55 to +125 -55 to +150 10mA, Range VR= 6V, IRR= 1mA, RL= 100 2 Operating IF= Temperature TJ Ω ℃ Storage Temperature Range - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2010-03 WILLAS ELECTRONIC CORP. 0.9 0.92 Volts mAmps WILLAS FM120-M+ THRU 1N4151 300mA SMALL SIGNAL SWITCHING DIODE - 50V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V DO-35 PACKAGE SOD-123+ PACKAGE FM1200-M+ Pb Free Product Package outline FeaturesRITING AND CHARACTERISTIC CURVES (1N4151) • Batch process design, excellent power dissipation offers betterElectrical reverse characteristic leakage current and(Ta thermal curves = 25°Cresistance. unless specified otherwise) SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ 2010-03 Rated DC Blocking Voltage @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient IR 0.50 0.70 0.85 WILLAS0.5 ELECTRONIC 10 0.9 CORP. 0.92 Volts mAmps WILLAS FM120-M+ 1N4151 300mA SMALL SIGNAL SWITCHING DIODE - 50V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V DO-35 PACKAGE SOD-123+ PACKAGE THRU FM1200-M+ Pb Free Product Package outline Features design, excellent • Batch process Ordering Information: power dissipation offers better reverse leakage current and thermal resistance. Device PN mounted application in order to • Low profile surface optimize board space. (1) (2) SOD-123H Packing Tape & Ammo Pack box:5Kpcs/box 0.146(3.7) 1N4151‐F G ‐WS loss, high efficiency. • Low power 0.130(3.3) High current capability, low forward voltage drop. • Note: (1) Packing code, Tape & Ammo Pack box • High surge capability. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” for overvoltage protection. • Guardring • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 ***Disclaimer*** Method 2026 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. WILLAS reserves the right to make changes without notice to any product Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band Mounting Position : Any •specification herein, to make corrections, modifications, enhancements or other •changes. WILLAS or anyone on its behalf assumes no responsibility or liability Weight : Approximated 0.011 gram for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratingscontained are intended to provide a product description only. "Typical" parameters at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. which may be included on WILLAS data sheets and/ or specifications can For capacitive load, derate current by 20% and do vary in different applications and actual performance may vary over time. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS Marking Code 12 13 14 15 16 18 10 115 120 WILLAS does not assume any liability arising out of the application or 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM V 14 21 28 35 42 56 70 105 140 Maximumuse of any product or circuit. RMS Voltage VRMS V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC A Maximum Average Forward Rectified Current IO 1.0 WILLAS products are not designed, intended or authorized for use in medical, Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A life‐saving implant or other applications intended for life‐sustaining or other related superimposed on rated load (JEDEC method) ℃ applications where a failure or malfunction of component or circuitry may directly 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ or indirectly cause injury or threaten a life without expressed written approval -55 to +125 -55 to +150 Operating Temperature Range TJ of WILLAS. Customers using or selling WILLAS components for use in - 65 to +175 Storage Temperature Range TSTG such applications do so at their own risk and shall agree to fully indemnify WILLAS CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 MaximumInc and its subsidiaries harmless against all claims, damages and expenditures Forward Voltage at 1.0A DC . 0.85 0.92 VF 0.50 0.70 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.5 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2010-03 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.