APTC80A10SCTG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VBUS VDSS = 800V RDSon = 100mΩ max @ Tj = 25°C ID = 42A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Q1 - G1 O UT S1 Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Q2 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration G2 0/VBU S S2 NTC1 • • S1 S2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS OUT Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 800 42 32 168 ±30 100 416 17 0.5 670 Unit V A V mΩ W A July, 2006 0/ VBUS Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTC80A10SCTG – Rev 2 OUT VBUS APTC80A10SCTG All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V Test Conditions VGS = 0V VDS = 25V f = 1MHz IF VF Maximum Reverse Leakage Current trr Reverse Recovery Time Qrr Reverse Recovery Charge 3 Min Typ 6761 3137 161 273 IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/µs www.microsemi.com Unit Max Unit µA mΩ V nA pF nC 138 Test Conditions VR=200V Max 75 750 100 3.9 ±175 36 Inductive switching @ 125°C VGS = 15V VBus = 533V ID = 42A R G = 1.8Ω Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 42A, R G = 1.8Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 42A, R G = 1.8Ω DC Forward Current Diode Forward Voltage 2.1 VGS = 10V VBus = 400V ID = 42A Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 21A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V Series diode ratings and characteristics IRM Min 10 13 83 35 437 µJ 417 765 µJ 513 Min 200 Tj = 25°C Tj = 125°C Tc = 85°C ns Typ Max 250 500 30 1.1 1.05 Tj = 125°C Unit V µA A 1.15 V July, 2006 Symbol 1 Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C 33 Tj = 125°C 150 ns nC 2–7 APTC80A10SCTG – Rev 2 Electrical Characteristics APTC80A10SCTG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current Test Conditions VR=1200V Min 1200 Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C Typ Max 200 400 20 1.6 2.6 800 4000 IF DC Forward Current VF Diode Forward Voltage IF = 20A QC Total Capacitive Charge IF = 20A, VR = 600V di/dt =1200A/µs 56 Q Total Capacitance f = 1MHz, VR = 200V 180 f = 1MHz, VR = 400V 132 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ Transistor Series diode Junction to Case Thermal Resistance Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 2500 -40 -40 -40 2.5 RT = Min R 25 µA A 1.8 3.0 V nC pF Max 0.3 1.2 0.8 Unit °C/W V 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Unit V Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T AL L DIME NSIONS MA RKED " * " A RE TOLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTC80A10SCTG – Rev 2 July, 2006 SP4 Package outline (dimensions in mm) APTC80A10SCTG Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 150 VGS=15&10V 100 6.5V 80 ID, Drain Current (A) 6V 60 5.5V 40 5V 4.5V 20 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 120 T J=-55°C 90 60 TJ =125°C TJ =25°C 30 TJ =125°C T J=-55°C 4V 0 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 45 Normalized to V GS=10V @ 21A 1.3 I D, DC Drain Current (A) VGS=10V 1.2 VGS=20V 1.1 1 0.9 40 35 30 25 20 15 10 5 0 0.8 0 10 20 30 40 50 60 70 80 90 I D, Drain Current (A) www.microsemi.com 25 50 75 100 125 150 TC, Case Temperature (°C) July, 2006 RDS(on) Drain to Source ON Resistance 0 4–7 APTC80A10SCTG – Rev 2 ID, Drain Current (A) 120 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 50 100 150 Maximum Safe Operating Area Threshold Voltage vs Temperature 1000 1.2 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 100 0 50 100 Coss 1000 Crss 100 10 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=42A T J=25°C 14 V DS =160V 12 VDS=400V 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) 8 VDS=640V 6 4 2 0 0 50 100 150 200 250 300 Gate Charge (nC) July, 2006 0 100ms 0 VGS, Gate to Source Voltage (V) Ciss Single pulse TJ =150°C TC=25°C 1 TC, Case Temperature (°C) 10000 100µs 1ms 150 Capacitance vs Drain to Source Voltage 100000 limited by RDSon 10 0.7 -50 C, Capacitance (pF) V GS=10V ID= 21A www.microsemi.com 5–7 APTC80A10SCTG – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTC80A10SCTG APTC80A10SCTG Delay Times vs Current Rise and Fall times vs Current 50 100 tf 40 V DS=533V RG=1.8Ω T J=125°C L=100µH 60 40 t r and tf (ns) t d(on) 20 30 V DS=533V RG=1.8Ω T J=125°C L=100µH 20 10 0 0 20 30 40 50 60 I D, Drain Current (A) 70 20 1.2 Switching Energy (mJ) Eon and Eoff (mJ) 3 VDS=533V RG=1.8Ω TJ=125°C L=100µH 30 40 50 60 I D, Drain Current (A) 70 Switching Energy vs Gate Resistance Switching Energy vs Current 1.6 Eon 0.8 Eoff 0.4 V DS=533V ID=42A T J=125°C L=100µH 2.5 2 Eoff 1.5 1 Eon Eoff 0.5 0 0 20 30 40 50 60 ID, Drain Current (A) 0 70 Operating Frequency vs Drain Current IDR , Reverse Drain Current (A) VDS=533V D=50% RG=1.8Ω T J=125°C T C=75°C 350 300 250 200 Hard switching 150 ZCS ZVS 100 50 0 15 20 25 30 35 ID, Drain Current (A) 5 7.5 10 12.5 15 Source to Drain Diode Forward Voltage 1000 100 TJ=150°C T J=25°C 10 40 1 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) July, 2006 10 2.5 Gate Resistance (Ohms) 400 Frequency (kHz) tr www.microsemi.com 6–7 APTC80A10SCTG – Rev 2 td(on) and td(off) (ns) t d(off) 80 APTC80A10SCTG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.9 0.8 0.9 0.7 0.6 0.7 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 40 800 30 IR Reverse Current (µA) I F Forward Current (A) TJ=25°C TJ=75°C 20 T J=125°C 10 TJ=175°C 600 400 0.5 1 1.5 2 2.5 3 T J=125°C 200 0 0 T J=75°C 3.5 VF Forward Voltage (V) T J=175°C 0 400 600 T J=25°C 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 1600 1200 800 400 0 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 July, 2006 10 100 VR Reverse Voltage APTC80A10SCTG – Rev 2 1