VS-ETU3006-M3, VS-ETU3006FP-M3 Datasheet

VS-ETU3006-M3, VS-ETU3006FP-M3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 30 A FRED Pt®
FEATURES
4
• Low forward voltage drop
• Ultrafast soft recovery time
• 175 °C operating junction temperature
1
• Low leakage current
1
2
• Fully isolated package (VINS = 2500 VRMS)
2
2L TO-220AC
2L TO-220 FULL-PAK
• True 2 pin package
Base
cathode
4
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
Anode
1
Cathode
VS-ETU3006-M3
2
Anode
1
Cathode
DESCRIPTION
Ultralow VF, soft-switching ultrafast rectifiers optimized for
Discontinuous (Critical) Mode (DCM) Power Factor
Correction (PFC).
VS-ETU3006FP-M3
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
PRODUCT SUMMARY
Package
2L TO-220AC, 2L TO-220FP
IF(AV)
30 A
VR
600 V
VF at IF
1.15 V
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
trr (typ.)
30 ns
APPLICATIONS
TJ max.
175 °C
Diode variation
Single die
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD AC/DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
TEST CONDITIONS
VALUES
UNITS
600
V
VRRM
Average rectified forward current in DC
IF(AV)
FULL-PAK
Non-repetitive peak surge current
IFSM
Operating junction and storage temperatures
TC = 130 °C
30
TC = 72 °C
TJ = 25 °C
A
200
TJ, TStg
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
VBR,
VR
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 30 A
-
1.4
2.0
IF = 30 A, TJ = 150 °C
-
1.15
1.35
VR = VR rated
-
0.02
30
TJ = 150 °C, VR = VR rated
-
30
250
IR = 100 μA
UNITS
V
Forward voltage
VF
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
20
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
μA
Revision: 22-Dec-15
Document Number: 93538
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-ETU3006-M3, VS-ETU3006FP-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
Qrr
MIN.
TYP.
MAX.
-
30
45
TJ = 25 °C
-
45
-
TJ = 125 °C
-
100
-
-
5.6
-
-
10
-
TJ = 25 °C
TJ = 125 °C
IF = 30 A
dIF/dt = 200 A/μs
VR = 200 V
UNITS
ns
A
TJ = 25 °C
-
127
-
TJ = 125 °C
-
580
-
MIN.
TYP.
MAX.
UNITS
-65
-
175
°C
-
0.84
1.3
-
3.2
3.8
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
FULL-PAK
TEST CONDITIONS
TJ, TStg
RthJC
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
70
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and greased
-
0.5
-
-
2
-
-
0.07
-
oz.
-
12
(10)
kgf · cm
(lbf · in)
Weight
6
(5)
Mounting torque
Marking device
Case style 2L TO-220AC
Case style 2L TO-220 FULL-PAK
°C/W
g
ETU3006
ETU3006FP
Revision: 22-Dec-15
Document Number: 93538
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETU3006-M3, VS-ETU3006FP-M3
www.vishay.com
Vishay Semiconductors
1000
1000
175°C
Reverse Current - IR (µA)
150°C
10
125°C
100°C
1
75°C
0.1
50°C
25°C
0.01
100
0.001
0
Tj = 175°C
100
200
300
400
500
600
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
10
Junction Capacitance - CT (pF)
Instantaneous Forward Current - IF (A)
100
Tj = 150°C
Tj = 25°C
100
10
1
0.0
0.5
1.0
1.5
2.0
1
2.5
0
Forward Voltage Drop - VF (V)
100
200
300
400
500
600
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
Thermal Impedance ZthJC (°C/W)
10
D = 0.5
1
D = 0.2
D = 0.1
D = 0.05
0.1
D = 0.02
Single Pulse
(Thermal Resistance)
D = 0.01
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 22-Dec-15
Document Number: 93538
3
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETU3006-M3, VS-ETU3006FP-M3
www.vishay.com
Vishay Semiconductors
Thermal Impedance ZthJC (°C/W)
10
D = 0.5
D = 0.2
1
D = 0.1
D = 0.05
Single Pulse
(Thermal Resistance)
D = 0.02
D = 0.01
0.1
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
t1, Rectangular Pulse Duration (Seconds)
Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK)
180
Allowable Case Temperature (°C)
Allowable Case Temperature (°C)
180
170
160
150
DC
140
130
160
140
120
100
DC
80
60
40
20
120
0
0
5
10 15 20 25 30 35
Average Forward Current - IF(AV)(A)
5
10
15
20
25
30
35
Average Forward Current - IF(AV)(A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Average Power Loss ( Watts )
60
RMS Limit
50
40
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
30
20
10
0
0
5
10 15 20 25 30 35 40 45
Average Forward Current - IF(AV) (A)
Fig. 8 - Forward Power Loss Characteristics
Revision: 22-Dec-15
Document Number: 93538
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETU3006-M3, VS-ETU3006FP-M3
www.vishay.com
Vishay Semiconductors
130
1800
120
1600
110
100
1400
If = 30 A, 125°C
1200
80
Qrr ( nC )
trr ( ns )
90
70
60
50
If = 30 A, 125°C
1000
800
600
If = 30 A, 25°C
40
If = 30 A, 25°C
400
30
200
typical value
20
typical value
10
0
100
1000
100
1000
di F /dt (A/µs )
di F /dt (A/µs )
Fig. 9 - Typical Reverse Recovery vs. dIF/dt
Fig. 10 - Typical Stored Charge vs. dIF/dt
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 22-Dec-15
Document Number: 93538
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETU3006-M3, VS-ETU3006FP-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
E
T
U
30
06
FP
-M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Circuit configuration:
3
-
T = TO-220
4
-
U = hyperfast recovery time
5
-
Current code: 30 = 30 A
6
-
Voltage code: 06 = 600 V
7
-
E = single diode
None = TO-220
FP = FULL-PAK
8
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-ETU3006-M3
50
1000
Antistatic plastic tube
VS-ETU3006FP-M3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
2L TO-220AC
www.vishay.com/doc?95259
2L TO-220 FULL-PAK
www.vishay.com/doc?95260
2L TO-220AC
www.vishay.com/doc?95391
2L TO-220 FULL-PAK
www.vishay.com/doc?95392
Revision: 22-Dec-15
Document Number: 93538
6
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
True 2 Pin TO-220
DIMENSIONS in millimeters and inches
0.002"
0.05 mm
A
A
E
ØP
F
B
Q
H1
D
Term. 4
0.150" REF.
45°
Ø 2.0 mm REF.
L1
b1
L
b
c
60°
1
2
J1
e
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.32
4.57
0.170
0.180
b
0.71
0.91
0.028
0.036
b1
1.15
1.39
0.045
0.055
c
0.36
0.53
0.014
0.021
D
14.99
15.49
0.590
0.610
E
10.04
10.41
0.395
0.410
e
5.08 BSC
0.200 BSC
F
1.22
1.37
0.048
0.054
H1
5.97
6.47
0.235
0.255
J1
2.54
2.79
0.100
0.110
L
13.47
13.97
0.530
0.550
L1 (1)
3.31
3.81
0.130
0.150
ØP
3.79
3.88
0.149
0.153
Q
2.60
2.84
0.102
0.112
Notes
(1) Lead dimension and finish uncontrolled in L
1
• These dimensions are within allowable dimensions of JEDEC TO-220AB rev. J outline dated 3-24-87
• Controling dimension: Inch
Revision: 05-Dec-12
Document Number: 95259
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
True 2 Pin TO-220 FULL-PAK
DIMENSIONS in millimeters and inches
A
ØQ
F
E
Q1
H1
D
Q2
θ
L1
b1
L
b
C
e
J1
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.53
4.93
0.178
0.194
b
0.71
0.91
0.028
0.036
b1
1.15
1.39
0.045
0.055
C
0.36
0.53
0.014
0.021
D
15.67
16.07
0.617
0.633
E
9.96
10.36
0.392
e
5.08 typical
0.408
0.200 typical
F
2.34
2.74
0.092
0.107
H1
6.50
6.90
0.256
0.272
J1
2.56
2.96
0.101
0.117
L
12.78
13.18
0.503
0.519
L1
2.23
2.63
0.088
0.104
ØQ
2.98
3.38
0.117
0.133
Q1
3.10
3.50
0.122
0.138
Q2
14.80
15.20
0.583
0.598

0°
5°
0°
5°
Revision: 05-Dec-12
Document Number: 95260
1
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Revision: 02-Oct-12
1
Document Number: 91000