VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance • Integrated thermistor • 10 μs short circuit capability • Square RBSOA • Low internal inductances EMIPAK-2B (package example) • Low switching loss • PressFit pins locking technology. Patent # US.263.820 B2 • UL approved file E78996 PRODUCT SUMMARY • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 RECTIFIER BYPASS DIODE VRRM 1200 V VFM typical at IF = 20 A 1.04 V IF at TC = 80 °C 62 A DESCRIPTION PFC IGBT VCES 1200 V VCE(ON) typical at IC = 15 A 2.61 V IC at TC = 80 °C 15 A Speed (max.) 20 kHz Speed 8 kHz to 30 kHz Package EMIPAK-2B Circuit Double interleaved boost converter VS-ETL015Y120H is an integrated solution for a double interleaved boost converter. The EMIPAK-2B package is easy to use thanks to the PressFit pins and the exposed substrate provides improved thermal performance. The optimized layout also helps to minimize stray parameters, allowing for better EMI performance. ABSOLUTE MAXIMUM RATINGS PARAMETER Operating junction temperature SYMBOL TEST CONDITIONS MAX. TJ 150 Storage temperature range TStg -40 to +150 RMS isolation voltage VISOL TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s UNITS °C 3500 V 1200 V DbpA - DbpB BYPASS DIODE Repetitive peak reverse voltage VRRM TC = 25 °C Continuous output current Surge current (non- repetitive) Power dissipation IF IFSM PD 94 TC = 80 °C 62 TSINK = 80 °C 39 Rated VRRM applied 250 TC = 25 °C 167 TC = 80 °C 93 A W PATENT(S): www.vishay.com/patents This Vishay product is protected by one or more United States and International patents. Revision: 16-Jun-16 Document Number: 94858 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETL015Y120H www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES 20 ICM 40 ILM (1) 40 Pulsed collector current Clamped inductive load current TC = 25 °C Continuous collector current IC Power dissipation PD V A 22 TC = 80 °C 15 TSINK = 80 °C 11 TC = 25 °C 89 TC = 80 °C 50 A W Da1 - Da2 - Db1 - Db2 CLAMPING DIODE Repetitive peak reverse voltage VRRM Single pulse forward current IFSM Diode continuous forward current Power dissipation IF PD 1200 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 95 TC = 25 °C 22 TC = 80 °C 14 TSINK = 80 °C 10 TC = 25 °C 80 TC = 80 °C 45 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 95 TC = 25 °C 22 TC = 80 °C 14 TSINK = 80 °C 10 TC = 25 °C 80 TC = 80 °C 45 V A W DTa1 - DTa2 - DTb1 - DTb2 AP DIODE Single pulse forward current Diode continuous forward current Power dissipation IFSM IF PD A W Notes • Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (1) V CC = 600 V, VGE = 15 V, L = 500 μH, Rg = 4.7 , TJ = 150 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS VRRM = 1200 V - - 0.14 VRRM = 1200 V, TJ = 150 °C - - 3.0 IF = 20 A - 1.04 1.23 IF = 20 A, TJ = 150 °C - 0.95 - - - 6.6 m - - 0.73 V DbpA - DbpB BYPASS DIODE Reverse leakage current IRRM Forward voltage drop VFM Forward slope resistance rt Conduction threshold voltage VT TJ = 150 °C mA V Ta1 - Ta2 -Tb1 - Tb2 PFC IGBT Collector to emitter breakdown voltage BVCES Collector to emitter voltage VCE(ON) Gate threshold voltage VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ VGE = 0 V, IC = 250 μA 1200 - - VGE = 15 V, IC = 15 A - 2.61 3.03 VGE = 15 V, IC = 15 A, TJ = 125 °C - 3.05 - 4.5 5.8 8.1 VCE = VGE, IC = 1.0 mA (25 °C to 125 °C) - -14 - mV/°C VCE = VGE, IC = 400 μA V Forward transconductance gfe VCE = 20 V, IC = 15 A - 8 - S Transfer characteristics VGE VCE = 20 V, IC = 15 A - 10 - V VGE = 0 V, VCE = 1200 V - 0.0003 0.075 VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 0.24 - VGE = ± 20 V, VCE = 0 V - - ± 200 Zero gate voltage collector current ICES Gate to emitter leakage current IGES mA nA Revision: 16-Jun-16 Document Number: 94858 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETL015Y120H www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) Da1 - Da2 - Db1 - Db2 CLAMPING DIODE PARAMETER SYMBOL Cathode to anode blocking voltage VBR Forward voltage drop VFM Reverse leakage current IRM TEST CONDITIONS IR = 100 μA IF = 10 A MIN. TYP. MAX. 1200 - - - 2.09 2.77 IF = 10 A, TJ = 125 °C - 2.16 - VR = 1200 V - 0.0004 0.075 VR = 1200 V, TJ = 125 °C - 0.25 - IF = 20 A - 2.59 3.25 IF = 20 A TJ = 125 °C - 2.86 - MIN. TYP. MAX. UNITS V mA DTa1 - DTa2 - DTb1 - DTb2 AP DIODE Forward voltage drop VFM V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS UNITS PFC IGBT (WITH FREEWHEELING CLAMPING DIODE) Total gate charge (turn-on) Qg IC = 9 A - 45 - Gate to emitter charge (turn-on) Qge VCC = 600 V - 8.7 - Qgc VGE = 15 V - 20 - Gate to collector charge (turn-on) Turn-on switching loss EON - 0.95 - Turn-off switching loss EOFF - 0.47 - Total switching loss ETOT - 1.42 - Turn-on delay time td(on) - 23 - - 22 - - 58 - Rise time Turn-off delay time Fall time tr td(off) IC = 15 A VCC = 600 V VGE = 15 V Rg = 4.7 L = 500 μH (1) tf - 178 - Turn-on switching loss EON - 1.18 - IC = 15 A VCC = 600 V VGE = 15 V Rg = 4.7 L = 500 μH TJ = 125 °C (1) - 0.72 - - 1.89 - - 24 - - 23 - - 60 - VGE = 0 V VCC = 30 V f = 1 MHz Turn-off switching loss EOFF Total switching loss ETOT Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) tf - 219 Input capacitance Cies - 1070 Output capacitance Coes - 63 Reverse transfer capacitance Cres - 26 Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 40 A, VCC = 600 V, VP = 1200 V, Rg = 4.7 , VGE = 15 V to 0 V Short circuit safe operating area SCSOA Rg = 22 , VCC = 900 V, VP = 1200 V VGE = 15 V to 0 nC mJ ns mJ ns pF Fullsquare - - 10 μs VR = 400 V IF = 10 A dl/dt = 500 A/μs - 103 - ns - 14 - A - 711 - nC VR = 400 V IF = 10 A dl/dt = 500 A/μs, TJ = 125 °C - 126 - ns - 17 - A - 1047 - nC Da1 - Da2 - Db1 - Db2 CLAMPING DIODE Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Revision: 16-Jun-16 Document Number: 94858 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETL015Y120H www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS VR = 400 V IF = 20 A dl/dt = 500 A/μs - 127 - ns - 16 - A - 1020 - nC VR = 400 V IF = 20 A dl/dt = 500 A/μs, TJ = 125 °C - 153 - ns - 19 - A - 1464 - nC DTa1 - DTa2 - DTb1 - DTb2 AP DIODE Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Note (1) Energy losses include “tail” and diode reverse recovery. INTERNAL NTC - THERMISTOR SPECIFICATIONS PARAMETER Resistance B-value SYMBOL TEST CONDITIONS VALUE R25 TC = 25 °C 5000 R100 TC = 100 °C 493 ± 5 % R2 = R25 exp. [B25/50 (1/T2 - 1/(298.15 K))] 3375 ± 5 % B25/50 Maximum operating temperature UNITS K 220 °C Dissipation constant 2 mW/°C Thermal time constant 8 s THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. DbpA - DbpB Bypass diode - Junction to case thermal resistance (per diode) - - 0.75 Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT - Junction to case thermal resistance (per switch) - - 1.4 Da1 - Da2 - Db1 - Db2 Clamping diode - Junction to case thermal resistance (per diode) RthJC DTa1 - DTa2 - DTb1 - DTb2 AP diode - Junction to case thermal resistance (per diode) - - 1.56 - - 1.56 DbpA - DbpB Bypass diode - Case to sink thermal resistance (per diode) - 0.63 - Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT - Case to sink thermal resistance (per switch) - 0.96 - Da1 - Da2 - Db1 - Db2 Clamping diode - Case to sink thermal resistance (per diode) RthCS (1) UNITS °C/W - 1.1 - - 1.1 - Case to sink thermal resistance per module - 0.1 - Mounting torque (M4) 2 - 3 Nm Weight - 45 - g DTa1 - DTa2 - DTb1 - DTb2 AP diode - Case to sink thermal resistance (per diode) Note (1) Mounting surface flat, smooth, and greased Revision: 16-Jun-16 Document Number: 94858 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETL015Y120H www.vishay.com Vishay Semiconductors 100 30 25 VGE = 18 V VGE = 15 V 20 VGE = 12 V TJ = 25 °C 10 IC (A) IFM (A) TJ = 150 °C TJ = 125 °C VGE = 9 V 15 10 5 1 0 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 0.6 1.2 1.8 2.4 3 VFM (V) 4.2 4.8 5.4 VCE (V) Fig. 4 - Typical Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT Output Characteristics, TJ = 125 °C Fig. 1 - Typical DbpA -DbpB Bypass Diode Forward Characteristics 160 160 Allowable Case Temperature (°C) Allowable Case Temperature (°C) 3.6 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 140 120 DC 100 80 60 40 20 0 100 0 IF - Continuous Forward Current (A) 5 10 15 20 25 IC - Continuous Collector Current (A) Fig. 2 - Maximum DbpA -DbpB Bypass Diode Forward Current vs. Case Temperature Fig. 5 - Maximum Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT Continuous Collector Current vs. Case Temperature 30 30 VCE = 20 V TJ = 25 °C 25 25 20 TJ = 125 °C IC (A) IC (A) 20 15 10 10 TJ = 150 °C 5 0 0.6 15 TJ = 125 °C 5 TJ = 25 °C 0 1.2 1.8 2.4 3 3.6 4.2 4.8 5.4 VCE (V) Fig. 3 - Typical Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT Output Characteristics, VGE = 15 V 5 6 7 8 9 10 11 12 13 14 VGE (V) Fig. 6 - Typical Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT Transfer Characteristics Revision: 16-Jun-16 Document Number: 94858 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETL015Y120H www.vishay.com Vishay Semiconductors 6.5 1000 TJ = 125 °C tf Switching Time (ns) 6 VGEth (V) 5.5 5 4.5 TJ = 25 °C 4 tdoff 100 tdon 10 tr 3.5 3 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 5 10 15 IC (A) 20 25 30 IC (A) Fig. 7 - Typical Q1 - Q4 Trench IGBT Energy Loss vs. IC (with D5 - D6 Clamping Diode) TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH Fig. 10 - Typical PFC IGBT Switching Time vs. IC (with Freewheeling Clamping Diode) TJ = 125 °C, VCC = 600 V, Rg = 4.7 , VGE = 15 V, L = 500 μH 10 2.4 2.2 TJ = 150 °C 1 2 1.8 TJ = 125 °C Energy (mJ) ICES (mA) 0.1 0.01 0.001 Eon 1.6 1.4 1.2 1 TJ = 25 °C 0.0001 Eoff 0.8 0.00001 100 200 300 400 500 600 700 800 900 1000 1100 1200 0.6 0 5 10 15 20 25 30 35 40 45 50 Rg (Ω) VCES (V) Fig. 8 - Typical Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT Zero Gate Voltage Collector Current Fig. 11 - Typical PFC IGBT Energy Loss vs. Rg (with Freewheeling Clamping Diode) TJ = 125 °C, VCC = 600 V, IC = 15 A, VGE = 15 V, L = 500 μH 2 1000 1.8 1.6 Switching Time (ns) tf Energy (mJ) 1.4 Eon 1.2 1 Eoff 0.8 0.6 0.4 tdoff 100 tr tdon 0.2 10 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 45 50 IC (A) Rg (Ω) Fig. 9 - Typical PFC IGBT Energy Loss vs. IC (with Freewheeling Clamping Diode) TJ = 125 °C, VCC = 600 V, Rg = 4.7 , VGE = 15 V, L = 500 μH Fig. 12 - Typical PFC IGBT Switching Time vs. Rg (with Freewheeling Clamping Diode) TJ = 125 °C, VCC = 600 V, IC = 15 A, VGE = 15 V, L = 500 μH Revision: 16-Jun-16 Document Number: 94858 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETL015Y120H www.vishay.com Vishay Semiconductors 250 30 230 25 210 TJ = 25 °C 190 TJ = 150 °C 15 trr (ns) IF (A) 20 150 10 TJ = 125 °C 130 5 25 °C 110 0 0 0.5 1 1.5 2 2.5 3 3.5 90 100 4 200 300 400 500 VFM (V) dIFdt (A/μs) Fig. 13 - Typical Da1 - Da2 - Db1 - Db2 Clamping Diode Forward Characteristics Fig. 16 - Typical Da1 - Da2 - Db1 - Db2 Clamping Diode Reverse Recovery Time vs. dIF/dt, Vrr = 400 V, IF = 10 A 160 20 140 18 125 °C 16 120 14 100 Irr (A) Allowable Case Temperature (°C) 125 °C 170 80 60 12 25 °C 10 8 40 6 20 4 2 100 0 0 5 10 15 20 25 30 200 300 400 500 IF - Continuous Forward Current (A) dIF/dt (A/μs) Fig. 14 - Maximum Da1 - Da2 - Db1 - Db2 Clamping Diode Forward Current vs. Case Temperature Fig. 17 - Typical Da1 - Da2 - Db1 - Db2 Clamping Diode Reverse Recovery Current vs. dIF/dt, Vrr = 400 V, IF = 10 A 10 1200 1100 150 °C 1 125 °C 1000 900 125 °C 0.01 Linear 25 °C Qrr (nC) IRM (mA) 0.1 800 700 25 °C 600 0.001 25 °C 0.0001 500 400 0.00001 100 200 300 400 500 600 700 800 900 1000 1100 1200 VR (V) Fig. 15 - Typical Da1 - Da2 - Db1 - Db2 Clamping Diode Reverse Leakage Current 300 100 200 300 400 500 dIFdt (A/μs) Fig. 18 - Typical Da1 - Da2 - Db1 - Db2 Clamping Diode Reverse Recovery Charge vs. dIF/dt, Vrr = 400 V, IF = 10 A Revision: 16-Jun-16 Document Number: 94858 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETL015Y120H www.vishay.com Vishay Semiconductors 30 290 270 25 250 TJ = 25 °C 230 TJ = 150 °C 15 125 °C 210 trr (ns) IF (A) 20 190 170 10 25 °C 150 TJ = 125 °C 130 5 110 90 100 0 0.5 1 1.5 2 2.5 3 3.5 4 200 300 400 500 VFM (V) dIFdt (A/μs) Fig. 19 - Typical DTa1 - DTa2 - DTb1 - DTb2 Antiparallel Diode Forward Characteristics Fig. 21 - Typical DTa1 - DTa2 - DTb1 - DTb2 Antiparallel Diode Reverse Recovery Time vs. dIF/dt Vrr = 400 V, IF = 20 A 160 22 140 20 18 120 125 °C 16 100 IRR (A) Allowable Case Temperature (°C) 0 80 14 25 °C 12 60 10 40 8 20 6 4 100 0 0 5 10 15 20 25 200 300 400 500 IF - Continuous Forward Current (A) dIFdt (A/μs) Fig. 20 - Maximum DTa1 - DTa2 - DTb1 - DTb2 Antiparallel Diode Forward Current vs. Case Temperature Fig. 22 - Typical DTa1 - DTa2 - DTb1 - DTb2 Antiparallel Diode Reverse Recovery Current vs. dIF/dt Vrr = 400 V, IF = 10 A 1600 1500 125 °C 1400 1300 Qrr (nC) 1200 1100 1000 900 25 °C 800 700 600 500 100 200 300 400 500 dIFdt (A/μs) Fig. 23 - Typical DTa1 - DTa2 - DTb1 - DTb2 Antiparallel Diode Reverse Recovery Charge vs. dIF/dt Vrr = 400 V, IF = 20 A Revision: 16-Jun-16 Document Number: 94858 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETL015Y120H www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.1 0.5 0.2 0.1 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 24 - Maximum Thermal Impedance ZthJC Characteristics (DbPa - DbpB Bypass Diode) ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.5 0.2 0.1 0.05 0.02 0.01 DC 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 25 - Maximum Thermal Impedance ZthJC Characteristics (Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.5 0.2 0.1 0.05 0.02 0.01 DC 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 26 - Maximum Thermal Impedance ZthJC Characteristics (Da1 - Da2 - Db1 - Db2 Clamping diode) Revision: 16-Jun-16 Document Number: 94858 9 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETL015Y120H www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.5 0.2 0.1 0.05 0.02 0.01 DC 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 27 - Maximum Thermal Impedance ZthJC Characteristics (DTa1 - DTa2 - DTb1 - DTb2 Antiparallel Diode) ORDERING INFORMATION TABLE Device code VS- ET L 015 Y 120 H 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Package indicator (ET = EMIPAK-2B) 3 - Circuit configuration (L = double interleaved boost converter) 4 - Current rating (015 = 15 A) 5 - Switch die technology (Y = trench IGBT) 6 - Voltage rating (120 = 1200 V) 7 - Diode die technology (H = HEXFRED diode) Revision: 16-Jun-16 Document Number: 94858 10 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETL015Y120H www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION DbpA DC+A DC+A PV+A PV+A DbpB DC+B DC+B PV+B PV+B A1 A1 Da1 A2 A2 Da2 B1 B1 Db1 B2 B2 Db2 Ta1 Tb1 Ta2 DTb1 Gb2 Eb2 DTa2 Gb1 Eb1 DTa1 Ga2 Ea2 Ga1 Ea1 Tb2 DTb2 T1 DCDC- T2 PACKAGE 24 24 20.8 20.8 11.2 11.2 8 8 4.8 4.8 1.6 1.6 6.4 DC+B GA1 EA1 PV+A GB1 EB1 6.4 DC- DC- GA2 EA2 T1 T2 GB2 EB2 3.2 16 9.6 16 3.2 DC+A A2 A1 DC- DC- B1 B2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95559 Revision: 16-Jun-16 Document Number: 94858 11 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit 3 ± 0.15 12 ± 0.35 4.3 ± 0.3 DIMENSIONS in millimeters 56.8 ± 0.3 52.7 ± 0.5 51 ± 0.15 20.4 Ø 16.6 4.4 ±0 16 16 12.8 9.6 9.6 12.8 6.4 3.2 6.4 37 ± 0.5 42.5 ± 0.15 53 ± 0.15 62.8 ± 0.3 3.2 .1 1.6 Pin position 4.8 0.4 1.6 4.8 8 11.2 14.4 17.6 20.8 24 Revision: 25-Jun-14 8 11.2 14.4 17.6 20.8 24 Document Number: 95559 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000