VS-ETH0806-M3, VS-ETH0806FP-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® FEATURES • Hyperfast soft recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 2L TO-220AC • Fully isolated package (VINS = 2500 VRMS) 2L TO-220 FULL-PAK • True 2 pin package • Designed and qualified according to JEDEC®-JESD 47 Base cathode 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VS-ETH0806-M3 DESCRIPTION / APPLICATIONS 2 Anode 1 Cathode 3 Anode 1 Cathode Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. VS-ETH0806FP-M3 PRODUCT SUMMARY Package 2L TO-220AC, 2L TO-220FP IF(AV) 8A VR 600 V VF at IF 1.3 V trr (typ.) 16 ns TJ max. 175 °C Diode variation Single die The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage Average rectified forward current in DC FULL-PAK Non-repetitive peak surge current IF(AV) IFSM Repetitive peak surge current Square wave 20 kHz duty cycle (50 %) TEST CONDITIONS VALUES UNITS 600 V VRRM FULL-PAK Operating junction and storage temperatures IFRM TC = 146 °C 8 TC = 114 °C TJ = 25 °C A 80 TC = 137 °C 16 A -65 to +175 °C TC = 96 °C TJ, TStg ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 8 A - 2.0 2.65 IF = 8 A, TJ = 150 °C - 1.3 1.85 VR = VR rated - 0.02 12 TJ = 150 °C, VR = VR rated - 15 100 IR = 100 μA UNITS V Forward voltage VF Reverse leakage current IR Junction capacitance CT VR = 600 V - 6 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH μA Revision: 15-Jun-15 Document Number: 93515 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH0806-M3, VS-ETH0806FP-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr MIN. TYP. MAX. IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V TEST CONDITIONS - 16 23 IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V - 20 28 TJ = 25 °C - 21 - - 39 - - 3 - - 5 - TJ = 25 °C - 36 - TJ = 125 °C - 108 - - 30 - ns - 13 - A - 205 - nC MIN. TYP. MAX. UNITS -65 - 175 °C TJ = 125 °C Peak recovery current IRRM Reverse recovery charge Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge TJ = 25 °C TJ = 125 °C TJ = 125 °C Qrr IF = 8 A dIF/dt = 200 A/μs VR = 390 V IF = 8 A dIF/dt = 600 A/μs VR = 390 V UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Thermal resistance, junction to case FULL-PAK TEST CONDITIONS TJ, TStg RthJC - 2.0 2.6 - 4.6 5.5 Thermal resistance, junction to ambient RthJA Typical socket mount - - 70 Typical thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2 - - 0.07 - oz. - 12 (10) kgf · cm (lbf · in) Weight 6 (5) Mounting torque Marking device Case style 2L TO-220AC Case style 2L TO-220 FULL-PAK °C/W g ETH0806 ETH0806FP Revision: 15-Jun-15 Document Number: 93515 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH0806-M3, VS-ETH0806FP-M3 Vishay Semiconductors 100 100 175 °C TJ = 175 °C 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.0 150 °C 10 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) www.vishay.com 125 °C 1 100 °C 75 °C 0.1 50 °C 0.01 25 °C 0.001 0.0001 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 100 200 300 400 500 600 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage C - Junction Capacitance (pF) 1000 100 10 1 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 D = 0.5 1 D = 0.2 D = 0.1 0.1 D = 0.05 D = 0.02 D = 0.01 0.01 1E-05 Single Pulse (Thermal Resistance) 1E-04 1E-03 1E-02 1E-01 1E+00 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 15-Jun-15 Document Number: 93515 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH0806-M3, VS-ETH0806FP-M3 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance (°C/W) 10 D = 0.5 D = 0.2 1 D = 0.1 D = 0.05 D = 0.02 D = 0.01 0.1 1E-05 Single Pulse (Thermal Resistance) 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 t1 - Rectangular Pulse Duration (s) 180 180 Allowable Case Temperature (°C) Allowable Case Temperature (°C) Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK) 170 160 DC 150 140 130 120 160 140 DC 120 100 80 60 0 2 4 6 8 10 0 2 4 6 8 10 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK) 20 IF - Average Power Loss (W) 18 RMS Limit 16 14 12 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 10 8 6 4 2 0 0 2 4 6 8 10 12 IF(AV) - Average Forward Current (A) Fig. 8 - Forward Power Loss Characteristics Revision: 15-Jun-15 Document Number: 93515 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH0806-M3, VS-ETH0806FP-M3 www.vishay.com Vishay Semiconductors 300 50 45 250 40 IF = 8 A, 125 °C IF = 8 A, 125 °C 200 Qrr (nC) trr (ns) 35 30 150 25 IF = 8 A, 25 °C 100 IF = 8 A, 25 °C 20 50 15 0 10 100 1000 100 1000 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 9 - Typical Reverse Recovery vs. dIF/dt Fig. 10 - Typical Stored Charge vs. dIF/dt VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 11 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 12 - Reverse Recovery Waveform and Definitions Revision: 15-Jun-15 Document Number: 93515 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH0806-M3, VS-ETH0806FP-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E T H 08 06 FP -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Circuit configuration: 3 - T = TO-220 4 - H = hyperfast recovery time 5 - Current code: 08 = 8 A 6 - Voltage code: 06 = 600 V 7 - E = single diode None = TO-220 FP = FULL-PAK 8 - Environmental digit: -M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-ETH0806-M3 50 1000 Antistatic plastic tube VS-ETH0806FP-M3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information 2L TO-220AC www.vishay.com/doc?95259 2L TO-220 FULL-PAK www.vishay.com/doc?95260 2L TO-220AC www.vishay.com/doc?95391 2L TO-220 FULL-PAK www.vishay.com/doc?95392 Revision: 15-Jun-15 Document Number: 93515 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors True 2 Pin TO-220 DIMENSIONS in millimeters and inches 0.002" 0.05 mm A A E ØP F B Q H1 D Term. 4 0.150" REF. 45° Ø 2.0 mm REF. L1 b1 L b c 60° 1 2 J1 e SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.32 4.57 0.170 0.180 b 0.71 0.91 0.028 0.036 b1 1.15 1.39 0.045 0.055 c 0.36 0.53 0.014 0.021 D 14.99 15.49 0.590 0.610 E 10.04 10.41 0.395 0.410 e 5.08 BSC 0.200 BSC F 1.22 1.37 0.048 0.054 H1 5.97 6.47 0.235 0.255 J1 2.54 2.79 0.100 0.110 L 13.47 13.97 0.530 0.550 L1 (1) 3.31 3.81 0.130 0.150 ØP 3.79 3.88 0.149 0.153 Q 2.60 2.84 0.102 0.112 Notes (1) Lead dimension and finish uncontrolled in L 1 • These dimensions are within allowable dimensions of JEDEC TO-220AB rev. J outline dated 3-24-87 • Controling dimension: Inch Revision: 05-Dec-12 Document Number: 95259 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors True 2 Pin TO-220 FULL-PAK DIMENSIONS in millimeters and inches A ØQ F E Q1 H1 D Q2 θ L1 b1 L b C e J1 SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.53 4.93 0.178 0.194 b 0.71 0.91 0.028 0.036 b1 1.15 1.39 0.045 0.055 C 0.36 0.53 0.014 0.021 D 15.67 16.07 0.617 0.633 E 9.96 10.36 0.392 e 5.08 typical 0.408 0.200 typical F 2.34 2.74 0.092 0.107 H1 6.50 6.90 0.256 0.272 J1 2.56 2.96 0.101 0.117 L 12.78 13.18 0.503 0.519 L1 2.23 2.63 0.088 0.104 ØQ 2.98 3.38 0.117 0.133 Q1 3.10 3.50 0.122 0.138 Q2 14.80 15.20 0.583 0.598 0° 5° 0° 5° Revision: 05-Dec-12 Document Number: 95260 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000