INFINEON BUP400D

BUP 400D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Pin 2
Pin 1
G
Pin 3
C
E
Type
VCE
IC
Package
Ordering Code
BUP 400D
600V
22A
TO-220 AB
Q67040-A4423-A2
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
Collector-gate voltage
VCGR
RGE = 20 kΩ
Values
600
V
600
Gate-emitter voltage
VGE
DC collector current
IC
± 20
A
TC = 25 °C
22
TC = 90 °C
14
Pulsed collector current, tp = 1 ms
ICpuls
TC = 25 °C
44
TC = 90 °C
28
IF
Diode forward current
TC = 90 °C
11
Pulsed diode current, tp = 1 ms
IFpuls
TC = 25 °C
72
Ptot
Power dissipation
TC = 25 °C
W
100
Chip or operating temperature
Tj
-55 ... + 150
Storage temperature
Tstg
-55 ... + 150
Semiconductor Group
Unit
1
°C
Jul-31-1996
BUP 400D
Maximum Ratings
Parameter
Symbol
DIN humidity category, DIN 40 040
-
IEC climatic category, DIN IEC 68-1
-
Values
E
Unit
-
55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
RthJC
≤ 1.25
Diode thermal resistance, chip case
RthJCD
≤ 2.5
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 0.35 mA
V
4.5
5.5
6.5
VGE = 15 V, IC = 10 A, Tj = 25 °C
-
2.1
2.7
VGE = 15 V, IC = 10 A, Tj = 125 °C
-
2.2
2.8
VGE = 15 V, IC = 20 A, Tj = 25 °C
-
3
-
VGE = 15 V, IC = 20 A, Tj = 125 °C
-
3.3
-
Collector-emitter saturation voltage
Zero gate voltage collector current
VCE(sat)
ICES
VCE = 600 V, VGE = 0 V, Tj = 25 °C
Gate-emitter leakage current
µA
-
-
160
IGES
VGE = 25 V, VCE = 0 V
nA
-
-
100
AC Characteristics
Transconductance
gfs
VCE = 20 V, IC = 10 A
Input capacitance
2
pF
-
570
760
-
80
120
-
50
75
Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
-
Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
-
Ciss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
S
2
Jul-31-1996
BUP 400D
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
ns
VCC = 300 V, VGE = 15 V, IC = 10 A
RGon = 100 Ω
Rise time
-
45
70
-
60
90
-
250
340
-
500
680
tr
VCC = 300 V, VGE = 15 V, IC = 10 A
RGon = 100 Ω
Turn-off delay time
td(off)
VCC = 300 V, VGE = -15 V, IC = 10 A
RGoff = 100 Ω
Fall time
tf
VCC = 300 V, VGE = -15 V, IC = 10 A
RGoff = 100 Ω
Free-Wheel Diode
Diode forward voltage
VF
V
IF = 10 A, VGE = 0 V, Tj = 25 °C
-
1.65
-
IF = 10 A, VGE = 0 V, Tj = 125 °C
-
-
-
Reverse recovery time
trr
ns
IF = 10 A, VR = -300 V, VGE = 0 V
diF/dt = -100 A/µs
Tj = 25 °C
-
60
100
Tj = 125 °C
-
100
150
Reverse recovery charge
Qrr
µC
IF = 10 A, VR = -300 V, VGE = 0 V
diF/dt = -100 A/µs
Tj = 25 °C
-
0.2
0.37
Tj = 125 °C
-
0.4
0.74
Semiconductor Group
3
Jul-31-1996
BUP 400D
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
Ptot
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
110
22
W
A
90
IC
18
80
16
70
14
60
12
50
10
40
8
30
6
20
4
10
2
0
0
20
40
60
80
100
120
°C
0
0
160
20
40
60
80
100
120
°C
TC
160
TC
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 1
10 2
tp = 5.1µs
K/W
A
10 µs
IC
ZthJC
10 0
10 1
10 -1
100 µs
D = 0.50
0.20
10 0
0.10
single pulse
1 ms
0.05
10 -2
0.02
0.01
10 ms
DC
10 -1
0
10
10
1
10
2
V 10
10 -3
-5
10
3
VCE
Semiconductor Group
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
4
Jul-31-1996
BUP 400D
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
parameter: tp = 80 µs, Tj = 125 °C
20
20
A
IC
16
14
A
17V
15V
13V
11V
9V
7V
IC
16
14
12
12
10
10
8
8
6
6
4
4
2
2
0
0
1
2
3
V
0
0
5
VCE
17V
15V
13V
11V
9V
7V
1
2
3
V
5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
20
A
IC
16
14
12
10
8
6
4
2
0
0
2
4
Semiconductor Group
6
8
10
V
14
VGE
5
Jul-31-1996
BUP 400D
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 100 Ω
par.: VCE = 300 V, VGE = ± 15 V, IC = 10 A
10 3
10 3
tdoff
tf
t
tf
t
ns
ns
tdoff
tr
tr
10 2
10
2
tdon
tdon
10 1
0
5
10
15
A
10 1
0
25
50
100
150
200
250
300
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 100 Ω
E = f (RG) , inductive load , Tj = 125°C
E
2.0
mWs
mWs
1.6
E
1.2
400
par.: VCE = 300V, VGE = ± 15 V, IC = 10 A
2.0
1.4
Ω
RG
IC
1.6
Eoff
1.4
Eon
1.2
1.0
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0.0
Eoff
Eon
0.0
0
5
10
15
A
25
0
IC
Semiconductor Group
50
100
150
200
250
300
Ω
400
RG
6
Jul-31-1996
BUP 400D
Typ. capacitances
Typ. gate charge
VGE = ƒ(QGate)
parameter: IC puls = 10 A
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 1
20
V
nF
VGE
16
C
100 V
14
300 V
10 0
12
Ciss
10
8
10 -1
6
Coss
Crss
4
2
0
0
10
20
30
40
nC
55
10 -2
0
5
10
15
20
25
30
QGate
Short circuit safe operating area
Reverse biased safe operating area
ICsc = f (VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 50 nH
ICpuls = f (VCE) , Tj = 150°C
parameter: VGE = 15 V
10
V
40
VCE
2.5
ICsc/IC(90°C)
ICpuls/IC
6
1.5
4
1.0
2
0.5
0
0.0
0
100
200
Semiconductor Group
300
400
500
600
V
800
VCE
7
0
100
200
300
400
500
600
V
800
VCE
Jul-31-1996
BUP 400D
Typ. forward characteristics
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IF = f (VF)
parameter: Tj
10 1
16
A
IF
Diode
K/W
ZthJC
12
10 0
10
Tj=125°C
Tj=25°C
8
D = 0.50
0.20
6
10
-1
0.10
0.05
4
0.02
single pulse
0.01
2
0
0.0
0.5
1.0
1.5
2.0
V
3.0
VF
Semiconductor Group
10 -2
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
8
Jul-31-1996
BUP 400D
Package Outlines
Dimensions in mm
Weight:
Semiconductor Group
9
Jul-31-1996