BSM300GA120DN2E3166 IGBT Power Module Preliminary data • Single switch • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate Type VCE IC BSM300GA120DN2E3166 1200V 430A Package Ordering Code SINGLE SWITCH 1 C67070-A2007-A70 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 430 TC = 80 °C 300 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 860 TC = 80 °C 600 Ptot Power dissipation per IGBT TC = 25 °C W 2500 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC ≤ 0.05 Diode thermal resistance, chip case RthJCD ≤ 0.065 Insulation test voltage, t = 1min. Vis Creepage distance + 150 °C -55 ... + 150 K/W 2500 Vac - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - Semiconductor Group 1 - 55 / 150 / 56 Mar-29-1996 BSM300GA120DN2E3166 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 12 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 300 A, Tj = 25 °C - 2.5 3 VGE = 15 V, IC = 300 A, Tj = 125 °C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C - 4 5.6 VCE = 1200 V, VGE = 0 V, Tj = 125 °C - 16 - Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V nA - - 320 AC Characteristics Transconductance gfs VCE = 20 V, IC = 300 A Input capacitance 124 nF - 22 - - 3.3 - - 1.2 - Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Mar-29-1996 BSM300GA120DN2E3166 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 300 A RGon = 3.3 Ω Rise time - 100 200 - 110 220 - 600 800 - 80 120 tr VCC = 600 V, VGE = 15 V, IC = 300 A RGon = 3.3 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 300 A RGoff = 3.3 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 300 A RGoff = 3.3 Ω Free-Wheel Diode Diode forward voltage VF V IF = 300 A, VGE = 0 V, Tj = 25 °C 1.4 1.8 2.3 IF = 300 A, VGE = 0 V, Tj = 125 °C - 1.35 - Reverse recovery time trr µs IF = 300 A, VR = -600 V, VGE = 0 V diF/dt = -2500 A/µs, Tj = 125 °C Reverse recovery charge - 0.6 - Qrr µC IF = 300 A, VR = -600 V, VGE = 0 V diF/dt = -2500 A/µs Tj = 25 °C - 16 - Tj = 125 °C - 45 - Semiconductor Group 3 Mar-29-1996 BSM300GA120DN2E3166 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 4 2600 W A 2200 Ptot IC 2000 tp = 19.0µs 10 3 1800 1600 100 µs 1400 10 2 1200 1000 1 ms 800 10 1 10 ms 600 400 200 0 0 DC 20 40 60 80 100 120 °C 10 0 0 10 160 10 1 10 2 10 3 TC Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 0 500 K/W A IC V VCE 400 ZthJC 10 -1 350 10 -2 300 250 D = 0.50 10 200 -3 0.20 0.10 150 0.05 10 -4 100 single pulse 0.02 0.01 50 0 0 20 40 60 80 100 120 °C 160 TC Semiconductor Group 10 -5 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Mar-29-1996 BSM300GA120DN2E3166 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C 600 600 A A 500 IC 450 400 17V 15V 13V 11V 9V 7V 500 IC 450 400 350 350 300 300 250 250 200 200 150 150 100 100 50 50 0 0 1 2 3 V 0 0 5 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 600 A 500 IC 450 400 350 300 250 200 150 100 50 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Mar-29-1996 BSM300GA120DN2E3166 Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 300 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 20 V nF VGE 16 Ciss C 600 V 14 800 V 10 1 12 10 Coss 8 Crss 10 0 6 4 2 0 0 10 -1 0 200 400 600 800 1000120014001600 nC 2000 5 10 15 20 25 30 V 40 VCE QGate Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 20 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 0 200 400 Semiconductor Group 600 800 1000 1200 V 1600 VCE 6 0 200 400 600 800 1000 1200 V 1600 VCE Mar-29-1996 BSM300GA120DN2E3166 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 3.3 Ω par.: VCE = 600 V, VGE = ± 15 V, IC = 300 A 10 4 10 4 ns ns t tdoff t 10 3 10 3 tdoff tdon tr tr tdon tf 10 2 10 1 0 100 200 300 400 500 A IC tf 10 2 10 1 0 700 5 10 15 20 25 Ω 30 40 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 3.3 Ω par.: VCE = 600V, VGE = ± 15 V, IC = 300 A 140 140 Eon mWs mWs Eon E E 100 100 80 80 Eoff 60 60 40 40 20 20 0 0 100 200 Semiconductor Group 300 400 500 A IC Eoff 700 0 0 5 10 15 20 25 30 Ω 40 RG 7 Mar-29-1996 BSM300GA120DN2E3166 Forward characteristics of fast recovery Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj Diode 10 0 600 Tj=125°C A K/W Tj=25°C 500 IF ZthJC 450 10 -1 400 350 10 -2 300 D = 0.50 250 0.20 200 0.10 0.05 10 -3 150 0.02 single pulse 100 0.01 50 0 0.0 0.5 1.0 1.5 2.0 V 3.0 10 -4 10 -3 10 -2 10 -1 s 10 0 tp VF Semiconductor Group 10 -4 -5 10 8 Mar-29-1996 BSM300GA120DN2E3166 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g Semiconductor Group 9 Mar-29-1996