IPP04N03L IPB04N03L OptiMOS Buck converter series Product Summary Feature • N-Channel VDS 30 V • Logic Level RDS(on) max. SMD version 3.9 mΩ • Excellent Gate Charge x RDS(on) product (FOM) ID 80 A • Superior thermal resistance P- TO263 -3-2 P- TO220 -3-1 • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching buck converter Type Package Ordering Code Marking IPP04N03L P- TO220 -3-1 Q67042-S4108 04N03L IPB04N03L P- TO263 -3-2 Q67042-S4107 04N03L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) Value A ID TC=25°C 1) Unit 80 80 I D puls 320 EAS 60 Repetitive avalanche energy, limited by Tjmax2) EAR 18 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 188 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=55A, VDD=25V, RGS=25Ω kV/µs IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C TC=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2003-01-17 IPP04N03L IPB04N03L Thermal Characteristics Symbol Parameter Values Unit min. typ. max. - 0.51 0.8 @ min. footprint - - 62 @ 6 cm2 cooling area 3) - - 40 Characteristics Thermal resistance, junction - case RthJC SMD version, device on PCB: RthJA K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V V GS=0V, I D=1mA Gate threshold voltage, VGS = VDS ID = 130 µA Zero gate voltage drain current µA I DSS V DS=30V, V GS=0V, Tj=25°C - 0.01 1 V DS=30V, V GS=0V, Tj=125°C - 10 100 - 1 100 Gate-source leakage current I GSS nA V GS=20V, VDS=0V Drain-source on-state resistance RDS(on) mΩ V GS=4.5V, ID=45A - 4.9 6.2 V GS=4.5V, ID=45A, SMD version - 4.6 5.9 V GS=10V, ID=45A - 3.6 4.2 V GS=10V, ID=45A, SMD version - 3.2 3.9 Drain-source on-state resistance4) RDS(on) 1Current limited by bondwire ; with an R thJC = 0.8K/W the chip is able to carry I D= 165A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2 2003-01-17 IPP04N03L IPB04N03L Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 11.5 23 - Dynamic Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, S ID=80A Input capacitance Ciss V GS=0V, V DS=25V, - 2930 3900 pF Output capacitance Coss f=1MHz - 1150 1520 Reverse transfer capacitance Crss - 270 420 Gate resistance RG - 1.9 - Ω Turn-on delay time t d(on) V DD=15V, VGS=10V, - 12.7 19 ns Rise time tr ID=20A, - 20 30 Turn-off delay time t d(off) RG=2.2Ω - 54.2 81.3 Fall time tf - 18.9 28.3 - 9.9 12.4 nC - 23 35 - 41.8 52 - 40.4 50 V(plateau) V DD=15V, ID=40A - 3.2 - V IS - - 80 A - - 320 Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg V DD=15V, ID=40A V DD=15V, ID=40A, V GS=0 to 5V Output charge Q oss V DS=15V, ID=40A, nC V GS=0V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, I F=80A - 0.9 1.2 V Reverse recovery time trr VR =-V, IF=lS, - 50 62 ns Reverse recovery charge Qrr diF /dt=100A/µs - 61 76 nC Page 3 2003-01-17 IPP04N03L IPB04N03L 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (TC) parameter: V GS≥ 10 V 200 IPP04N03L IPP04N03L 90 W A 70 140 ID P tot 160 120 60 50 100 40 80 30 60 20 40 10 20 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( V DS ) ZthJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 3 IPP04N03L 10 1 IPP04N03L K/W tp = 30.0µs 10 0 ZthJC R 100 µs ID 10 2 DS (on ) = V DS /I D A 10 -1 10 -2 D = 0.50 1 ms 0.20 10 1 10 10 ms -3 0.10 0.05 DC 10 -4 10 0 -1 10 10 0 10 1 V 10 2 VDS 10 -5 -7 10 0.02 single pulse 0.01 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2003-01-17 IPP04N03L IPB04N03L 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=25°C RDS(on) = f (ID) parameter: tp = 80 µs parameter: V GS A IPP04N03L 14 Ω j i h VGS [V] a 2.5 160 ID 140 g 120 100 f 80 b 2.8 c 3.0 d 3.3 e 3.5 f 3.8 g 4.0 h 4.3 i 4.5 j 10.0 g 10 9 8 7 h 6 i 5 4 d 40 2 VGS [V] = 1 b a 0.5 1 1.5 2 2.5 3 3.5 j 3 c 20 0 0 f 11 e 60 e 12 RDS(on) 190 IPP04N03L Ptot = 188W 4 V 0 0 5 e f 3.5 3.8 g 4.0 20 h i j 4.3 4.5 10.0 40 60 80 100 A VDS 140 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max g fs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: gfs 160 35 A S 120 gfs ID 25 100 20 80 15 60 10 40 5 20 0 0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 VGS Page 5 0 0 20 40 60 80 100 120 140 160 A 200 ID 2003-01-17 IPP04N03L IPB04N03L 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : ID = 45 A, VGS = 10 V parameter: V GS = VDS 10 IPP04N03L 2.5 Ω V V GS(th) RDS(on) 8 7 6 650µA 1.5 98% 5 130µA 4 1 typ 3 2 0.5 1 0 -60 -20 20 60 100 °C 140 0 -60 200 -20 20 60 100 180 °C Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: V GS=0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 IPP04N03L A Ciss pF 10 2 IF C Coss 10 3 10 1 Crss Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 2 0 5 10 15 20 V 30 VDS 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-01-17 IPP04N03L IPB04N03L 13 Typ. avalanche energy 15 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj ) par.: ID = 55 A, VDD = 25 V, RGS = 25 Ω parameter: ID=10 mA IPP04N03L 36 60 V V(BR)DSS E AS mJ 40 34 33 32 30 31 30 20 29 10 28 0 25 45 65 85 105 125 145 °C 185 Tj 27 -60 -20 20 60 100 140 °C 200 Tj 14 Typ. gate charge VGS = f (QGate ) parameter: ID = 40 A pulsed IPP04N03L 16 V VGS 12 10 0.2 VDS max 8 6 0.5 VDS max 0.8 VDS max 4 2 0 0 20 40 60 80 nC 120 Q Gate Page 7 2003-01-17 IPP04N03L IPB04N03L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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