PROFET® ITS612N1
Smart Two Channel Highside Power Switch
For Industrial Applications
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection Vbb(AZ)
Vbb(on)
Operating voltage
Operating temperature Ta
43
5.0 ... 34
-30 … +85
V
V
°C
both
channels: each parallel
On-state resistance
RON
200
100 mΩ
Load current (ISO)
2.3
4.4
A
IL(ISO)
4
4
A
Current limitation
IL(SCr)
PG-TO220AB/7
Application
7
1
• µC compatible power switch with diagnostic
Standard
feedback for 12 V and 24 V DC grounded
loads in industrial applications
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
7
1
Straight leads
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
Voltage
source
V
3
IN1
6
IN2
5
ST
ESD
Overvoltage
protection
Current
limit 1
4
Logic
Voltage
Level shifter
sensor
Rectifier 1
Logic
Limit for
unclamped
ind. loads 1
Charge
pump 2
PROFET
1
Temperature
sensor 1
Gate 2
protection
Current
limit 2
GND
2
OUT1
Open load
Short to Vbb
detection 1
Charge
pump 1
Level shifter
Rectifier 2
1)
+ V bb
Gate 1
protection
Limit for
unclamped
ind. loads 2
OUT2
Temperature
sensor 2
7
Load
Open load
Short to Vbb
detection 2
Signal GND
Load GND
With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
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2006-Mar-28
PROFET® ITS612N1
Pin
Symbol
Function
1
OUT1 (Load, L)
Output 1, protected high-side power output of channel 1
2
GND
Logic ground
3
IN1
Input 1, activates channel 1 in case of logical high signal
4
Vbb
5
ST
Positive power supply voltage,
the tab is shorted to this pin
Diagnostic feedback: open drain, low on failure
6
IN2
Input 2, activates channel 2 in case of logical high signal
7
OUT2 (Load, L)
Output 2, protected high-side power output of channel 2
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
Tj Start=-40 ...+150°C
Load
dump protection2) VLoadDump = UA + Vs, UA = 13.5 V
3)
RI = 2 Ω, RL= 5.3 Ω, td= 200 ms, IN= low or high
Load current (Short circuit current, see page 5)
Junction temperature
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.
one channel, IL = 2.3 A, ZL = 89 mH, 0 Ω:
both channels parallel, IL = 4.4 A, ZL = 47 mH, 0 Ω:
Symbol
Vbb
Vbb
Values
43
34
Unit
V
V
60
V
IL
Tj
Ta
Tstg
Ptot
self-limited
+150
-30 … +85
-40 ...+105
36
A
°C
EAS
290
580
mJ
1.0
2.0
kV
-10 ... +16
±2.0
±5.0
V
mA
4)
VLoad dump
W
see diagrams on page 9
Electrostatic discharge capability (ESD)
(Human Body Model)
IN: VESD
all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
VIN
IIN
IST
see internal circuit diagrams page 7
2)
3)
4)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
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2006-Mar-28
PROFET® ITS612N1
Parameter and Conditions, each channel
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Values
typ
max
-3.5
-7.0
-75
Unit
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
chip - case, both channels: RthJC
each channel:
junction - ambient (free air): RthJA
min
----
K/W
Electrical Characteristics
Parameter and Conditions, each channel
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1 or 7)
IL = 1.8 A
Tj=25 °C: RON
each channel
Tj=150 °C:
Nominal load current, ISO Norm (pin 4 to 1 or 7)
VON = 0.5 V, TC = 85 °C
each channel: IL(ISO)
both channels parallel:
Output current (pin 1 or 7) while GND disconnected
or GND pulled up, Vbb=30 V, VIN= 0, see diagram
page 8
Turn-on time
IN
to 90% VOUT:
to 10% VOUT:
Turn-off time
IN
RL = 12 Ω, Tj =-40...+150°C
Slew rate on
10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C
Slew rate off
70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C
Infineon Technologies AG
3
1.8
3.5
160
320
2.3
4.4
--
--
--10
ton
toff
80
80
200
200
400
400
µs
dV /dton
0.1
--
1
V/µs
-dV/dtoff
0.1
--
1
V/µs
IL(GNDhigh)
--
200
400
mΩ
A
mA
2006-Mar-28
PROFET® ITS612N1
Parameter and Conditions, each channel
Symbol
Values
min
typ
max
Vbb(on)
Vbb(under)
Vbb(u rst)
5.0
3.5
--
----
Vbb(ucp)
--
∆Vbb(under)
Vbb(over)
Vbb(o rst)
∆Vbb(over)
Vbb(AZ)
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Operating Parameters
Operating voltage5)
Undervoltage shutdown
Undervoltage restart
Tj =-40...+150°C:
Tj =-40...+150°C:
Tj =-40...+25°C:
Tj =+150°C:
Undervoltage restart of charge pump
see diagram page 12
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150°C:
Overvoltage restart
Tj =-40...+150°C:
Overvoltage hysteresis
Tj =-40...+150°C:
6)
Overvoltage protection
Tj =-40...+150°C:
Ibb=40 mA
Standby current (pin 4),
VIN=0
Tj=-40...+150°C:
7)
Operating current (Pin 2) , VIN=5 V
both channels on, Tj =-40...+150°C,
Operating current (Pin 2)7)
one channel on, Tj =-40...+150°C:,
5)
6)
7)
Unit
V
V
V
5.6
34
5.0
5.0
7.0
7.0
--
0.2
--
V
34
33
-42
--0.5
47
43
----
V
V
V
V
V
µA
Ibb(off)
IGND
---
90
0.6
150
1.2
mA
IGND
--
0.4
0.7
mA
At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
See also VON(CL) in table of protection functions and circuit diagram page 8.
Add IST, if IST > 0, add IIN, if VIN>5.5 V
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PROFET® ITS612N1
Parameter and Conditions, each channel
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Protection Functions8)
Initial peak short circuit current limit (pin 4 to 1
or 7)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit shutdown current limit
Tj = Tjt (see timing diagrams, page 11)
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL)
IL= 40 mA:
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 4 to 2) 9)
Reverse battery voltage drop (Vout > Vbb)
IL = -1.9 A, each channel
Tj=150 °C:
Diagnostic Characteristics
Open load detection current
(included in standby current Ibb(off))
Open load detection voltage
8)
9)
Values
min
typ
max
Unit
IL(SCp)
5.5
4.5
2.5
9.5
7.5
4.5
13
11
7
A
--
4
--
A
41
150
---
47
-10
--
53
--32
V
°C
K
V
-VON(rev)
--
610
--
mV
IL(off)
--
30
--
µA
2
3
4
V
IL(SCr)
VON(CL)
Tjt
∆Tjt
-Vbb
Tj=-40..150°C: VOUT(OL)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 8).
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PROFET® ITS612N1
Parameter and Conditions, each channel
Symbol
Values
min
typ
max
RI
2.5
3.5
6
kΩ
VIN(T+)
VIN(T-)
∆ VIN(T)
IIN(off)
1.7
1.5
-1
--0.5
--
3.5
--50
V
V
V
µA
On state input current (pin 3 or 6), VIN = 3.5 V,
Tj =-40..+150°C
IIN(on)
20
50
90
µA
Delay time for status with open load
td(ST OL3)
--
220
--
µs
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high)
ST low voltage
Tj =-40...+25°C, IST = +1.6 mA: VST(low)
Tj = +150°C, IST = +1.6 mA:
5.4
---
6.1
---
-0.4
0.6
V
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Input and Status Feedback10)
Input resistance
Tj=-40..150°C, see circuit page 7
Input turn-on threshold voltage
Tj =-40..+150°C:
Input turn-off threshold voltage
Tj =-40..+150°C:
Input threshold hysteresis
Off state input current (pin 3 or 6), VIN = 0.4 V,
Tj =-40..+150°C
after Input neg. slope (see diagram page 12)
10)
Unit
If a ground resistor RGND is used, add the voltage drop across this resistor.
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PROFET® ITS612N1
Truth Table
Normal operation
Channel 1
Open load
Channel 2
Channel 1
Short circuit to Vbb
Channel 2
both channel
Overtemperature
Channel 1
Channel 2
Undervoltage/ Overvoltage
L = "Low" Level
H = "High" Level
IN2
OUT1
OUT2
ST
ITS612N1
L
L
H
H
L
L
H
L
H
X
L
L
H
L
H
X
L
X
H
L
H
X
X
X
L
H
L
H
L
H
X
L
L
H
L
H
X
L
L
H
L
H
X
X
X
L
H
X
L
L
H
H
Z
Z
H
L
H
X
H
H
H
L
H
X
L
L
L
L
L
X
X
L
L
H
L
H
L
H
X
Z
Z
H
L
H
X
H
H
H
L
L
L
X
X
L
L
L
H
H
H
H
L
H
H
L
H
H
L
H
H
L
H
H
H
L
L
H
L
H
L
H
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 12)
Terms
V
IN1
Status output
bb
4
I IN1
3
V
IN1
V
VON2
V bb
IN1
OUT1
I IN2
I ST
Ibb
6
IN2 V
5
ST
IN2
PROFET
ST
GND
OUT2
1
R ST(ON)
V
OUT1
V OUT2
GND
R
ESDZD
ESD-Zener diode: 6.1 V typ., max 5 mA;
RST(ON) < 380 Ω at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
Input circuit (ESD protection)
IN
ST
7
IGND
GND
I L1
I L2
2
R
+5V
VON1
I
ESD-ZD I
I
I
GND
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
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PROFET® ITS612N1
Inductive and overvoltage output clamp
GND disconnect
+ V bb
V
V
bb
Z
4
3
IN1
Vbb
OUT1
VON
6
OUT
5
PROFET
GND
Ibb
IN2
PROFET
ST
GND
OUT2
1
7
2
V V V
IN1 IN2 ST
VON clamped to 47 V typ.
V
GND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
Overvolt. and reverse batt. protection
GND disconnect with GND pull up
+ V bb
4
IN1
V
RI
Z2
3
Logic
6
V
IN2
ST
V
Vbb
OUT1
V
IN1
IN2
R ST
IN1
5
IN2
PROFET
ST
GND
OUT2
1
7
2
Z1
GND
R GND
Signal GND
V
GND
V
ST
V
bb
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 3.5 kΩ typ,
RGND= 150 Ω
Vbb disconnect with energized inductive
load
Open-load detection
4
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
3
IN1
Vbb
OUT1
high
6
5
IN2
PROFET
ST
GND
OUT2
1
7
2
OFF
I
L(OL)
V
bb
Logic
unit
Open load
detection
V
Normal load current can be handled by the PROFET
itself.
OUT
Signal GND
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2006-Mar-28
PROFET® ITS612N1
Vbb disconnect with charged external
inductive load
Maximum allowable load inductance for
a single switch off (both channels parallel)
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0 Ω
L [mH]
1000
4
3
IN1
Vbb
OUT1
high
6
5
IN2
PROFET
OUT2
ST
1
GND
D
7
2
V
bb
100
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
E bb
10
E AS
IN
PROFET
=
ELoad
Vbb
OUT
ST
GND
ZL
{
L
RL
EL
1
2
ER
3
4
5
6
7
8
IL [A]
Energy stored in load inductance:
2
EL = 1/2·L·I L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
IL· L
IL·RL
)
EAS= 2·R ·(Vbb + |VOUT(CL)|)· ln (1+ |V
L
OUT(CL)|
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2006-Mar-28
PROFET® ITS612N1
Typ. transient thermal impedance chip case
ZthJC = f(tp), one Channel active
ZthJC [K/W]
10
1
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
0.1
0.01
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1
tp [s]
Transient thermal impedance chip case
ZthJC = f(tp), both Channel active
ZthJC [K/W]
10
1
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
0.1
0.01
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1
tp [s]
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2006-Mar-28
PROFET® ITS612N1
Timing diagrams
Both channels are symmetric and consequently the diagrams
are valid for each channel as well as for permuted channels
Figure 2b: Switching an inductive load
Figure 1a: Vbb turn on:
IN1
IN
IN2
V bb
ST
V
V
OUT1
V
OUT
OUT2
I
L
ST open drain
t
t
Figure 3a: Short circuit
shut down by overtempertature, reset by cooling
Figure 2a: Switching a lamp:
IN
IN
ST
IL
I L(SCp)
V
OUT
I
other channel: normal operation
IL(SCr)
L
ST
t
t
Heating up may require several milliseconds, depending on
external conditions
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2006-Mar-28
PROFET® ITS612N1
Figure 4a: Overtemperature:
Reset if Tj <Tjt
Figure 6a: Undervoltage:
IN
IN
V
ST
bb
Vbb(u cp)
Vbb(u rst)
V
bb(under)
V
OUT
V OUT
T
J
ST open drain
t
t
Figure 6b: Undervoltage restart of charge pump
Figure 5a: Open load: detection in OFF-state, turn
on/off to open load
VON(CL)
Von
IN1
on-state
VOUT1
V
bb(u rst)
IL1
V
channel 1: open load
V
t
d(ST OL3)
V
V
bb(over)
off-state
channel 2: normal operation
off-state
IN2
bb(o rst)
bb(u cp)
bb(under)
t d(ST OL3)
V bb
ST
t
charge pump starts at Vbb(ucp) =5.6 V typ.
td(ST,OL3) depends on external circuitry because of high
impedance
*) IL = 30 µA typ
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2006-Mar-28
PROFET® ITS612N1
Figure 7a: Overvoltage:
IN
Vbb
VON(CL)
Vbb(over)
V bb(o rst)
V
OUT
ST
t
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PROFET® ITS612N1
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2006
All Rights Reserved.
Package and Ordering Code
All dimensions in mm
Standard PG-TO220AB/7
ITS612N1
Ordering code
SP000221233
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
PG-TO220AB/7, Opt. E3230 Ordering code
ITS612N1 E3230
Infineon Technologies AG
Infineon Technologies Components may only be used in lifesupport devices or systems with the express written
approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the
safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the
human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be
endangered.
SP000221234
14
2006-Mar-28