BTS409L1
Smart Highside Power Switch
Features
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
43
V
5.0 ... 34 V
200 mΩ
2.3
A
4
A
TO-220AB/5
5
1
Straight leads
Standard
Application
5
1
5
SMD
• µC compatible power switch with diagnostic
feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
3
+ V bb
Voltag
Overvoltag
source
protectio
Curren
limit
Gate
protectio
V Logic
2
Charge
sensor
Level
f
Rectifier
IN
ESD
4
Voltag
Limit for
unclampe
ind.
OUT
5
Temperatur
sensor
Open
Short to
detectio
Logic
Load
R
ST
PROFET
GND
O
GND
1
Signal GND
1)
Load GND
With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
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BTS409L1
Pin
Symbol
Function
1
GND
-
Logic ground
2
IN
I
Input, activates the power switch in case of logical high signal
3
Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback, low on failure
5
OUT
(Load, L)
O
Output to the load
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Supply voltage for full short circuit protection
Tj Start=-40 ...+150°C
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V
RI3)= 2 Ω, RL= 5.3 Ω, td= 200 ms, IN= low or high
Load current (Short circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.
IL = 2.3 A, ZL = 98 mH, 0 Ω:
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
all other pins:
Symbol
Vbb
Vbb
VLoad dump4)
IL
Tj
Tstg
Ptot
EAS
VESD
Values
43
34
Unit
V
V
60
V
self-limited
-40 ...+150
-55 ...+150
18
A
°C
335
1.0
2.0
mJ
kV
-10 ... +16
±2.0
±5.0
V
mA
Values
typ
max
-7
-75
39
Unit
W
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
VIN
IIN
IST
see internal circuit diagrams page 6
Thermal Characteristics
Parameter and Conditions
Thermal resistance
2)
3)
4)
5)
Symbol
chip - case: RthJC
junction - ambient (free air): RthJA
SMD version, device on PCB5):
min
---
K/W
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
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BTS409L1
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 1.8 A
Tj=25 °C: RON
Tj=150 °C:
Nominal load current, ISO Norm (pin 3 to 5)
VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or
GND pulled up, Vbb=30 V, VIN= 0, see diagram
page 7
Turn-on time
IN
to 90% VOUT:
Turn-off time
IN
to 10% VOUT:
RL = 12 Ω, Tj =-40...+150°C
Slew rate on
10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C
Slew rate off
70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C
160
200
400
1.8
320
2.3
mΩ
--
--
-10
ton
toff
80
80
200
200
400
400
µs
dV /dton
0.1
--
1
V/µs
-dV/dtoff
0.1
--
1
V/µs
Tj =-40...+150°C:
Tj =-40...+150°C:
Tj =-40...+25°C:
Tj =+150°C:
Undervoltage restart of charge pump
see diagram page 12
Tj =-40...+150°C:
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150°C:
Overvoltage restart
Tj =-40...+150°C:
Overvoltage hysteresis
Tj =-40...+150°C:
Overvoltage protection7)
Tj =-40...+150°C:
Ibb=40 mA
Standby current (pin 3)
VIN=0
Tj=-40...+25°C:
Tj= 150°C:
Vbb(on)
Vbb(under)
Vbb(u rst)
5.0
3.5
--
----
V
V
V
Vbb(ucp)
--
5.6
34
5.0
5.0
7.0
7.0
∆Vbb(under)
--
0.2
--
V
Vbb(over)
Vbb(o rst)
∆Vbb(over)
Vbb(AZ)
34
33
-42
--0.5
47
43
----
V
V
V
V
IL(off)
10
12
--
23
28
12
µA
Leakage output current (included in Ibb(off))
VIN=0
Operating current (Pin 1)8), VIN=5 V,
Tj =-40...+150°C
----
IGND
--
1.8
3.5
mA
Operating Parameters
Operating voltage6)
Undervoltage shutdown
Undervoltage restart
6)
7)
IL(ISO)
IL(GNDhigh)
--
Ibb(off)
A
mA
V
µA
At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
See also VON(CL) in table of protection functions and circuit diagram page 7.
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BTS409L1
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Protection Functions9)
Initial peak short circuit current limit (pin 3 to 5)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit shutdown current limit
Tj = Tjt (see timing diagrams, page 10)
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL)
IL= 40 mA:
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1) 10)
Diagnostic Characteristics
Open load detection current
(on-condition)
Values
min
typ
max
Unit
IL(SCp)
5.5
4.5
3
9.5
7.5
5
13
11
7
A
--
4
--
A
41
150
---
47
-10
--
53
--32
V
°C
K
V
10
10
---
200
150
mA
2
3
4
V
4
10
30
kΩ
IL(SCr)
VON(CL)
Tjt
∆Tjt
-Vbb
Tj=-40 °C: IL (OL)
Tj=25 ..150°C:
Open load detection voltage11) (off-condition)
VOUT(OL)
Tj=-40..150°C:
Internal output pull down
(pin 5 to 1), VOUT=5 V, Tj=-40..150°C
RO
8)
Add IST, if IST > 0, add IIN, if VIN>5.5 V
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
10) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
11) External pull up resistor required for open load detection in off state.
9)
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BTS409L1
Parameter and Conditions
Symbol
Values
min
typ
max
RI
2.5
3.5
6
kΩ
VIN(T+)
VIN(T-)
∆ VIN(T)
IIN(off)
1.7
1.5
-1
--0.5
--
3.5
--50
V
V
V
µA
On state input current (pin 2), VIN = 3.5 V,
Tj =-40..+150°C
IIN(on)
20
50
90
µA
Delay time for status with open load after switch
off
(see timing diagrams, page 11), Tj =-40..+150°C
Status invalid after positive input slope
(open load)
Tj=-40 ... +150°C:
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA:
ST low voltage
Tj =-40...+25°C, IST = +1.6 mA:
Tj = +150°C, IST = +1.6 mA:
td(ST OL4)
100
400
800
µs
--
250
600
µs
5.4
---
6.1
---
-0.4
0.6
V
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Input and Status Feedback12)
Input resistance
see circuit page 6
Input turn-on threshold voltage
Tj =-40..+150°C:
Input turn-off threshold voltage
Tj =-40..+150°C:
Input threshold hysteresis
Off state input current (pin 2), VIN = 0.4 V,
Tj =-40..+150°C
12)
td(ST)
VST(high)
VST(low)
Unit
If a ground resistor RGND is used, add the voltage drop across this resistor.
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BTS409L1
Truth Table
Input-
Output
level
level
L
H
L
H
L
H
L
H
Normal
operation
Open load
Short circuit
to Vbb
Overtemperature
Undervoltage
Overvoltage
H
H
H (L14))
L
L15)
H (L16))
H
L
H
H
H
H
13)
H
H
H
L
H
L
H
L
H
L = "Low" Level
H = "High" Level
Status
L
L
L
L
L
L
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)
Terms
Input circuit (ESD protection)
Ibb
2
V
bb
IN
VST
IN
IL
PROFET
4
I
Vbb
IN
I ST
V
R
3
I IN
OUT
ESD-ZD I
VON
5
I
I
GND
ST
GND
1
R
IGND
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
VOUT
GND
13)
Power Transistor off, high impedance
with external resistor between pin 3 and pin 5
15) An external short of output to V , in the off state, causes an internal current from output to ground. If R
bb
GND
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
16) Low resistance to V may be detected in ON-state by the no-load-detection
bb
14)
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BTS409L1
Status output
Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN
high
+5V
R ST(ON)
+ V bb
ST
ESDZD
GND
VON
ON
ESD-Zener diode: 6.1 V typ., max 5 mA;
RST(ON) < 380 Ω at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
Inductive and overvoltage output clamp
OUT
Open load
detection
Logic
unit
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
+ V bb
V
Z
R
V
ON
EXT
OFF
V
OUT
OUT
PROFET
GND
Open load
detection
Logic
unit
R
O
VON clamped to 47 V typ.
Signal GND
Overvolt. and reverse batt. protection
GND disconnect
+ V bb
V
R IN
IN
RI
Z2
3
Logic
2
R ST ST
V
IN
PROFET
PROFET
Z1
Vbb
4
GND
R GND
V
Signal GND
VZ1 = 6.2 V typ., VZ2 = 47 V typ., RGND = 150 Ω,
RST= 15 kΩ, RI= 3.5 kΩ typ.
bb
V
IN
V
ST
OUT
5
ST
GND
1
V
GND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
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BTS409L1
GND disconnect with GND pull up
Inductive Load switch-off energy
dissipation
E bb
3
2
Vbb
IN
E AS
OUT
PROFET
4
5
IN
ST
GND
V
bb
V
IN ST
=
V
OUT
PROFET
1
V
ELoad
Vbb
ST
GND
GND
ZL
{
L
RL
EL
ER
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive
load
Energy stored in load inductance:
2
EL = 1/2·L·I L
While demagnetizing load inductance, the energy
dissipated in PROFET is
3
high
2
Vbb
IN
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
OUT
PROFET
4
with an approximate solution for RL > 0 Ω:
5
ST
GND
EAS=
1
V
IL· L
IL·RL
·(V + |VOUT(CL)|)· ln (1+
)
|VOUT(CL)|
2·RL bb
Maximum allowable load inductance for
a single switch off
bb
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0 Ω
Normal load current can be handled by the PROFET
itself.
L [mH]
10000
Vbb disconnect with charged external
inductive load
high
2
S
3
IN
Vbb
PROFET
4
1000
OUT
5
D
ST
100
GND
1
V
bb
10
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
1
1
2
3
4
5
IL [A]
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BTS409L1
Transient thermal impedance chip case
ZthJC = f(tp)ZthJC [K/W]
10
1
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
0.1
0.01
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1
1E2
tp [s]
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BTS409L1
Timing diagrams
Figure 2b: Switching an inductive load
Figure 1a: Vbb turn on:
IN
IN
V
bb
t
ST
d(ST)
*)
V
OUT
V
OUT
ST open drain
IL
I L(OL)
t
t
proper turn on under all conditions
*) if the time constant of load is too large, open-load-status may
occur
Figure 2a: Switching a lamp,
Figure 3a: Short circuit
shut down by overtempertature, reset by cooling
IN
IN
ST
IL
V
IL(SCr)
OUT
I
I L(SCp)
L
t
ST
t
Heating up may require several milliseconds, depending on
external conditions
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BTS409L1
Figure 4a: Overtemperature:
Reset if Tj <Tjt
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
IN
IN
ST
ST
V
V
t
d(ST OL1)
t
d(ST OL2)
OUT
OUT
T
I
J
normal
open
L
normal
t
t
td(ST OL1) = 30 µs typ., td(ST OL2) = 20 µs typ
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
Figure 5c: Open load: detection in ON- and OFF-state
(with REXT), turn on/off to open load
IN
ST
IN
t
d(ST)
t
d(ST OL4)
ST
V
V
OUT
I
I
L
open
t
t
d(ST)
OUT
L
open
t
The status delay time td(ST OL4) allows to ditinguish between
the failure modes "open load" and "overtemperature".
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BTS409L1
Figure 6a: Undervoltage:
Figure 7a: Overvoltage:
IN
IN
V
Vbb
bb
V ON(CL)
Vbb(over)
V bb(o rst)
Vbb(u cp)
V
V
bb(under)
bb(u rst)
V
OUT
V OUT
ST
ST open drain
t
t
Figure 6b: Undervoltage restart of charge pump
VON(CL)
V
V
bb(u rst)
V
V
V
off-state
off-state
on-state
V on
bb(over)
bb(o rst)
bb(u cp)
bb(under)
V bb
charge pump starts at Vbb(ucp) =5.6 V typ.
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BTS409L1
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5
BTS409L1
SMD TO-220AB/5, Opt. E3062 Ordering code
Ordering code
Q67060-S6107-A2
BTS409L1 E3062A T&R:
Changed since 04.96
Date Change
Dec
Zth Specification added
1996 td(ST OL4) max reduced from 1500
to 800µs
ESD capability increased
EAS maximum rating and diagram
added
2000 Company Name
TO-220AB/5, Option E3043 Ordering code
BTS409L1 E3043
Infineon Technologies AG
Q67060-S6107-A4
Q67060-S6107-A3
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BTS409L1
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
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For further information on technology, delivery terms and
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Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
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Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in lifesupport devices or systems with the express written
approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the
safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the
human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be
endangered.
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