Data Sheet, V 2.0, February 2009 TLE4966L High Precision Hall-Effect Switch with Direction Detection Sensors Edition 2009-02 Published by Infineon Technologies AG 81726 München, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. TLE4966L Revision History: 2009-02 Previous Version: V 1.2 Page V 2.0 Subjects (major changes since last revision) TLE4966H removed We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] TLE4966L 1 1.1 1.2 1.3 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Configuration (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2.1 2.2 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Circuit Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Electrical and Magnetic Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Field Direction Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Timing Diagrams for the Speed and Direction Outputs . . . . . . . . . . . . 12 7 7.1 7.2 7.3 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Distance between Chip and Package Surface . . . . . . . . . . . . . . . . . . . . . Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Data Sheet 4 5 5 5 6 14 14 14 15 V 2.0, 2009-02 High Precision Hall-Effect Switch with Direction Detection 1 Overview 1.1 Features • • • • • • • • • • • • • • TLE4966L 2.7 V to 24 V supply voltage operation Operation from unregulated power supply High sensitivity and high stability of the magnetic switching points High resistance to mechanical stress by Active Error Compensation Reverse battery protection (-18 V) Superior temperature stability Peak temperatures up to 195°C without damage Low jitter (typ. 1 µs) Digital output signals Bipolar version Excellent matching between the 2 Hall probes Hall plate distance 1.45 mm Direction & speed information Direction signal switches before the speed signal 1.2 Functional Description The TLE4966L is an integrated circuit double Hall-effect sensor designed specifically for highly accurate applications. Precise magnetic switching points and high temperature stability are achieved by active compensation circuits and chopper techniques on chip. The IC provides a speed signal at Q2 for every magnetic pole pair and a direction information at Q1, which is provided before the speed signal. Type Package TLE4966L PG-SSO-4-1 Data Sheet 5 V 2.0, 2009-02 TLE4966L Overview 1.3 Pin Configuration (top view) Center of Sensitive Area 1.45 2.67 ± 0.1 1.53 ± 0. 1 direction speed 1 2 3 4 PG-SSO-4-1 Figure 1 Pin Definition and Center of Sensitive Area Table 1 Pin Definitions and Functions Pin No. Symbol Function 1 VS Supply voltage 2 Q1 Direction 3 Q2 Speed 4 GND Ground Data Sheet 6 V 2.0, 2009-02 TLE4966L General 2 General 2.1 Block Diagram VS Voltage Regulator (reverse polarity protected) Oscillator & Sequencer ESD Bias and Compensation Circuits GND Q2 Chopped Hall Probe Chopped Hall Probe Figure 2 2.2 Amplifier Amplifier Filter Comparator with Hysteresis Filter Q1 Direction Detection Block Diagram Circuit Description The chopped Double Hall Switch comprises two Hall probes, bias generator, compensation circuits, oscillator, and output transistors. The bias generator provides currents for the Hall probes and the active circuits. Compensation circuits stabilize the temperature behavior and reduce technology variations. The Active Error Compensation rejects offsets in signal stages and the influence of mechanical stress to the Hall probes caused by molding and soldering processes and other thermal stresses in the package. This chopper technique together with the threshold generator and the comparator ensures high accurate magnetic switching points. Data Sheet 7 V 2.0, 2009-02 TLE4966L Maximum Ratings 3 Maximum Ratings Table 2 Absolute Maximum Ratings Tj = -40°C to 150°C Parameter Symbol Supply voltage VS Limit Values Unit min. max. -18 -18 -18 18 24 26 V -50 50 mA VQ -0.7 -0.7 18 26 V Continuous output current IQ -50 50 mA Junction temperature Tj – – – – 155 165 175 195 °C Storage temperature TS -40 150 °C Magnetic flux density B – unlimited mT Supply current IS through protection device Output voltage Conditions for 1 h, RS ≥ 200 Ω for 5 min, RS ≥ 200 Ω for 5 min @ 1.2 kΩ pull up for 2000 h (not additive) for 1000 h (not additive) for 168 h (not additive) for 3 x 1 h (additive) Note: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 3 ESD Protection 1) Parameter Symbol ESD voltage VESD Limit Values min. max. – ±4 Unit Notes kV HBM, R = 1.5 kΩ, C = 100 pF TA = 25°C 1) Human Body Model (HBM) tests according to: EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method 3015.7 Data Sheet 8 V 2.0, 2009-02 TLE4966L Operating Range 4 Operating Range Table 4 Operating Range Parameter Symbol min. typ. max. Supply voltage VS 2.7 – – – – – 18 24 26 V Output voltage VQ Tj -0.7 – 18 V -40 – – – 150 175 °C IQ 0 – 10 mA Junction temperature Output current Data Sheet Limit Values 9 Unit Conditions 1 h with RS ≥ 200 Ω for 5 min RS ≥ 200 Ω for 168 h V 2.0, 2009-02 TLE4966L Electrical and Magnetic Parameters 5 Electrical and Magnetic Parameters Table 5 Electrical Characteristics Parameter Symbol 1) Limit Values Unit Conditions min. typ. max. IS ISR VQSAT 4 5.2 7 mA 0 0.2 1 mA – 0.3 0.6 V VS = 2.7 V ... 18 V VS = -18 V IQ = 10 mA Output leakage current IQLEAK – 0.05 10 µA for VQ = 18 V Output fall time tf tr – 0.2 1 µs RL = 1.2 kΩ; CL < 50 pF – 0.2 1 µs fOSC fSW td tdc tQJ – 320 – kHz 0 – 15 2) kHz – 13 – µs 50 200 1000 ns – 1 – µsRMS Typ. value for squarewave signal 1 kHz Repeatability of BREP magnetic thresholds 5) – 40 – µTRMS Typ. value for ∆B/∆t > 12 mT/ms Power-on time 6) – 13 – µs – 1.45 – mm –- - –190 K/W Supply current Reverse current Output saturation voltage Output rise time Chopper frequency Switching frequency Delay time 3) Count Signal Delay Output jitter 4) tPON Distance of hall plates dHALL Thermal resistance 7) RthJA see: Figure 3 on Page 12 VS ≥ 2.7 V PG-SSO-4-1 1) over operating range, unless otherwise specified. Typical values correspond to VS = 12 V and TA = 25°C 2) To operate the sensor at the max. switching frequency, the magnetic signal amplitude must be 1.4 times higher than for static fields. This is due to the -3 dB corner frequency of the low pass filter in the signal path. 3) Systematic delay between magnetic threshold reached and output switching 4) Jitter is the unpredictable deviation of the output switching delay 5) BREP is equivalent to the noise constant 6) Time from applying VS ≥ 2.7 V to the sensor until the output state is valid 7) Thermal resistance from junction to ambient Data Sheet 10 V 2.0, 2009-02 TLE4966L Electrical and Magnetic Parameters Calculation of the ambient temperature: e.g. for VS = 12.0 V, IStyp = 5.5 mA, VQSATtyp = 0.3 V and 2 x IQ = 10 mA : Power Dissipation: PDIS = 72.0 mW. In TA = Tj – (RthJA × PDIS) = 175°C – (190 K/W × 0.072 W) Resulting max. ambient temperature: TA = 161.3°C Table 6 Magnetic Characteristics 1). Parameter Symbol Tj [°C] min. typ. max. Operate point BOP -40 25 150 5.2 5.0 4.7 7.7 7.5 7.1 10.3 10.0 9.5 mT Release point BRP -40 25 150 -10.3 -10.0 -9.5 -7.7 -7.5 -7.1 -5.2 -5.0 -4.7 mT Hysteresis BHYS -40 25 150 – 10.0 – – 15.0 – – 20.0 – mT Magnetic matching BMATCH -40 25 150 – -2.0 – – 0 – – 2.0 – mT Valid for BOP1 - BOP2 and BRP1 - BRP2 Magnetic offset BOFF -40 25 150 – -2.0 – – 0 – – 2.0 – mT (BOP + BRP)/2 – – -350 – ppm/°C Temperature TC compensation of magnetic thresholds Limit Values Unit Conditions 1) over operating range, unless otherwise specified. Typical values correspond to VS = 12 V Note: Typical characteristics specify mean values expected over the production spread. Field Direction Definition Positive magnetic fields related with south pole of magnet to the branded side of package. Data Sheet 11 V 2.0, 2009-02 TLE4966L Timing Diagrams for the Speed and Direction Outputs 6 Timing Diagrams for the Speed and Direction Outputs Applied Magnetic Field BOP BRP td td tf tr VQ 90% 10% Figure 3 Timing Definition of the Speed Signal tdc tdc Speed Direction t Change of Direction Figure 4 Data Sheet Timing Definition of the Direction Signal 12 V 2.0, 2009-02 TLE4966L Timing Diagrams for the Speed and Direction Outputs N S S N N S Rotation Direction S N S N S N Branded Side of IC TLE4966 Figure 5 Definition of the Direction Signal Rotation Direction State of Direction Output VQ1 Left to right Low Right to left High Data Sheet 13 V 2.0, 2009-02 TLE4966L Package Information 7 Package Information 7.1 Package Marking Figure 6 Marking PG-SSO-4-1 S 4966B yyww Year (yy) = 00 ... 99 Calendar Week (ww) = 01 ... 52 AEP03646 Figure 7 7.2 Marking Distance between Chip and Package Surface d Branded Side d: Distance to Upper Side of IC P-SSO-4-1: 0.3 ±0.1 mm AEA03255 Figure 8 Data Sheet Distance Chip to Upper Side of IC 14 V 2.0, 2009-02 TLE4966L Package Information Package Outlines PG-SSO-4-1 5.34 ±0.05 2 A 0.2 12.7 ±1 7˚ 7˚ 0.6 MAX. 0.2 +0.1 4x 0.5 3 x 1.27 = 3.81 4 ±0.3 6.35 ±0.4 12.7 ±0.3 Total tolerance at 10 pitches ±1 1 -1 0.4 ±0.05 6 ±0.5 1.27 CODE 18 ±0.5 4 0.25 ±0.05 23.8 ±0.5 1 (14.8) (Useable Length) CODE 1 MAX.1) (0.25) 3.71 ±0.08 3.38 ±0.06 CODE 1 x 45˚±1˚ 38 MAX. 1.9 MAX. 1 -0.1 +0.75 5.16 ±0.08 9 -0.5 Figure 9 0.1 MAX. 7.3 A Adhesive Tape Tape 0.25 -0.15 0.39 ±0.1 1) No solder function area You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Data Sheet 15 Dimensions in mm V 2.0, 2009-02 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG