INFINEON TLE4921

Data Sheet, V 1.1, January 2008
TLE4921-5U
Dynamic Differential Hall Effect Sensor IC
Sensors
N e v e r
s t o p
t h i n k i n g .
Edition 2008-01
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2008.
All Rights Reserved.
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TLE4921-5U
Revision History:
2008-01
Previous Version:
V1.0
V 1.1
Page
Subjects (major changes since last revision)
5
Ordering Code changed
11
“Output leakage current” unit corrected
20
Figures “Delay Time between Switching Threshold” exchanged and
corrected
21
Figure “Delay Time versus Differential Field” corrected
We Listen to Your Comments
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Template: mc_a5_ds_tmplt.fm / 4 / 2004-09-15
TLE4921-5U
Table of Contents
Page
1
1.1
1.2
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Configuration
(view on branded side of component) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2
2.1
2.2
2.3
General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Circuit Description (see Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4
Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Electrical and Magnetic Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6
Application Configurations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
7
Typical Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 18
8
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Data Sheet
4
7
7
8
8
V 1.1, 2008-01
Dynamic Differential Hall Effect Sensor IC
TLE4921-5U
Bipolar IC
1
Overview
1.1
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Advanced performance
High sensitivity
Symmetrical thresholds
High piezo resistivity
Reduced power consumption
South and north pole pre-induction possible
AC coupled
Digital output signal
Two-wire and three-wire configuration possible
Large temperature range
Large airgap
Low cut-off frequency
Protection against overvoltage
Protection against reversed polarity
Output protection against electrical disturbances
The differential Hall Effect sensor TLE4921-5U provides a high sensitivity and a superior
stability over temperature and symmetrical thresholds in order to achieve a stable duty
cycle. TLE4921-5U is particularly suitable for rotational speed detection and timing
applications of ferromagnetic toothed wheels such as anti-lock braking systems,
transmissions, crankshafts, etc. The integrated circuit (based on Hall effect) provides a
digital signal output with frequency proportional to the speed of rotation. Unlike other
rotational sensors differential Hall ICs are not influenced by radial vibration within the
effective airgap of the sensor and require no external signal processing.
Type
Marking
Ordering Code
Package
TLE4921-5U
215U
SP000013593
PG-SSO-4-1
Data Sheet
5
V 1.1, 2008-01
TLE4921-5U
Overview
1.2
Pin Configuration
(view on branded side of component)
B
2.67
2.5
A
0.2 B
1.53
Center of
sensitive area
1
2
VS
Q GND C
4
0.2 A
3
AEP01694
Figure 1
Table 1
Pin Definitions and Functions
Pin No.
Symbol
Function
1
VS
Supply voltage
2
Q
Output
3
GND
Ground
4
C
Capacitor
Data Sheet
6
V 1.1, 2008-01
TLE4921-5U
General
2
General
2.1
Block Diagram
VS
1
Protection
Device
Internal Reference and Supply
VREG (3V)
Hall-Probes
Amplifier
HighpassFilter
3
Data Sheet
Protection
Open
Collector Device
2
Q
4
GND
Figure 2
SchmittTrigger
CF
AEB01695
Block Diagram
7
V 1.1, 2008-01
TLE4921-5U
General
2.2
Functional Description
The Differential Hall Sensor IC detects the motion and position of ferromagnetic and
permanent magnet structures by measuring the differential flux density of the magnetic
field. To detect ferromagnetic objects the magnetic field must be provided by a back
biasing permanent magnet (south or north pole of the magnet attached to the rear
unmarked side of the IC package).
Using an external capacitor the generated Hall voltage signal is slowly adjusted via an
active high pass filter with a low cut-off frequency. This causes the output to switch into
a biased mode after a time constant is elapsed. The time constant is determined by the
external capacitor. Filtering avoids ageing and temperature influence from Schmitttrigger input and eliminates device and magnetic offset.
The TLE4921-5U can be exploited to detect toothed wheel rotation in a rough
environment. Jolts against the toothed wheel and ripple have no influence on the output
signal.
Furthermore, the TLE4921-5U can be operated in a two-wire as well as in a three-wireconfiguration.
The output is logic compatible by high/low levels regarding on and off.
2.3
Circuit Description (see Figure 2)
The TLE4921-5U is comprised of a supply voltage reference, a pair of Hall probes
spaced at 2.5 mm, differential amplifier, filter for offset compensation, Schmitt trigger,
and an open collector output.
The TLE4921-5U was designed to have a wide range of application parameter
variations. Differential fields up to ± 80 mT can be detected without influence to
the switching performance. The pre-induction field can either come from a
magnetic south or north pole, whereby the field strength up to 500 mT or more will
not influence the switching points. The improved temperature compensation
enables a superior sensitivity and accuracy over the temperature range. Finally
the optimized piezo compensation and the integrated dynamic offset
compensation enable easy manufacturing and elimination of magnet offsets.
Protection is provided at the input/supply (pin 1) for overvoltage and reverse polarity and
against over-stress such as load dump, etc., in accordance with ISO-TR 7637 and
DIN 40839. The output (pin 2) is protected against voltage peaks and electrical
disturbances.
Data Sheet
8
V 1.1, 2008-01
TLE4921-5U
Maximum Ratings
3
Maximum Ratings
Table 2
Absolute Maximum Ratings
Tj = -40°C to 150°C
Parameter
Symbol
Limit Values
Unit
Remarks
min.
max.
VS
VQ
IQ
-IQ
-35 1)
30
V
-0.7
30
V
–
50
mA
–
50
mA
Capacitor
voltage
VC
-0.3
3
V
Junction
temperature
Tj
–
150
°C
–
160
2500 h
–
170
1000 h
–
210
40 h
Supply voltage
Output voltage
Output current
Output reverse
current
5000 h
Storage
temperature
TS
-40
150
°C
Thermal
resistance
PG-SSO-4-1
RthJA
–
190
K/W
–
200
mA
t < 2 ms; v = 0.1
–
200
mA
t < 2 ms; v = 0.1
Current through ISZ
input-protection
device
Current through IQZ
output-protection
device
1) Reverse current < 10 mA
Data Sheet
9
V 1.1, 2008-01
TLE4921-5U
Operating Range
4
Operating Range
Table 3
ESD Protection
Human Body Model (HBM) tests according to:
Standard EIA/JESD22-A114-B HBM
Parameter
Symbol
ESD - protection VESD
Table 4
min.
max.
–
±2
Unit
Remarks
kV
Operating Range
Parameter
Supply voltage
Junction
temperature
Limit Values
Symbol
VS
Tj
Limit Values
Unit
Remarks
min.
typ.
max.
4.5
–
24
V
-40
–
150
°C
–
–
160
2500 h
–
–
170
1000 h
Pre-induction
B0
-500
–
500
mT
Differential
induction
∆B
-80
–
80
mT
5000 h
at Hall probe;
independent of
magnet orientation
Note: In the operating range the functions given in the circuit description are fulfilled.
Data Sheet
10
V 1.1, 2008-01
TLE4921-5U
Electrical and Magnetic Parameters
5
Electrical and Magnetic Parameters
Table 5
Electrical Characteristics
Parameter
Symbol
Unit
Test
Condition
Test
Circuit
1
min.
typ.
max.
3.8
5.3
8.0
mA
4.3
5.9
8.8
mA
Output
saturation
voltage
VQSAT
–
0.25
0.6
V
VQ = high
IQ = 0 mA
VQ = low
IQ = 40 mA
IQ = 40 mA
Output leakage
current
IQL
–
–
50
µA
VQ = 24 V
1
-1
0
1
mT
-20 mT < ∆B
< 20 mT 1) 2)
f = 200 Hz
2
f = 200 Hz,
∆B = 20 mT
f = 200 Hz,
∆B = 20 mT
f = 200 Hz,
∆B = 20 mT
2
IS = 16 mA
IQ = 16 mA
IQ = 40 mA
CL = 10 pF
IQ = 40 mA
CL = 10 pF
f = 10 kHz
∆B = 5 mT
1
1
25°C ±2°C
1
Supply current
IS
Limit Values
Center of
∆Bm
switching points:
(∆BOP + ∆BRP) / 2
Operate point
∆BOP
–
–
0
mT
Release point
∆BRP
0
–
–
mT
Hysteresis
∆BH
0.5
1.5
2.5
mT
Overvoltage
protection
at supply voltage VSZ
VQZ
at output
27
27
–
–
35
35
V
V
Output rise time
tr
–
–
0.5
µs
Output fall time
tf
–
–
0.5
µs
Delay time
tdop
tdrp
tdop - tdrp
RC
–
–
–
–
–
0
25
10
15
µs
µs
µs
35
43
52
kΩ
Filter input
resistance
Data Sheet
11
1
1
2
2
1
1
2
V 1.1, 2008-01
TLE4921-5U
Electrical and Magnetic Parameters
Table 5
Electrical Characteristics (cont’d)
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Test
Condition
Test
Circuit
Filter sensitivity
to ∆B
SC
–
-5
–
mV/mT –
Filter bias
voltage
VC
1.6
2
2.4
V
∆B = 0
1
Frequency
f
3)
–
20000
Hz
∆B = 5 mT
2
Resistivity
against
mechanical
stress (piezo)
∆Bm
∆BH
-0.1
-0.1
–
–
0.1
0.1
mT
mT
F=2N
2 4)
1
1) The Current consumption characteristic will be different and the specified values can slightly change
2) Leakage currents at pin 4 should be avoided. The bias shift of Bm caused by a leakage current IL can be
IL × RC ( T )
calculated by: ∆ B m = ---------------------------SC ( T )
3) For higher ∆B the values may exceed the limits like following | ∆Bm | < | 0.05 × ∆B |
1
4) Depends on filter capacitor CF. The cut-off frequency is given by f = --------------------------------. The switching points are
2π × R C × C F
guaranteed over the whole frequency range, but amplitude modification and phase shift due to the 1st order
highpass filter have to be taken into account.
Note: The listed characteristics are ensured over the operating range of the integrated
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at Tj = 25°C and the
given supply voltage.
Data Sheet
12
V 1.1, 2008-01
TLE4921-5U
Electrical and Magnetic Parameters
IS
VSZ
300 Ω
RP
1
VS
VLD
IC1) 4
C
VS
RL
TLE4921-5U
Q
IQ , IQR
2
4.7 nF
1)
RC =
Figure 3
VQSAT, VQZ
GND
3
VC
∆VC
∆ IC
CL
AES01696
Test Circuit 1
1
VS
4
VS
CF
470 nF
C
TLE4921-5U
GND
3
1 kΩ
Q
2
VQ
f min
f max
∆ BOP
∆ BHy
AES01258
Figure 4
Data Sheet
Test Circuit 2
13
V 1.1, 2008-01
TLE4921-5U
Application Configurations
6
Application Configurations
Two possible applications are shown in Figure 7 and Figure 8 (Toothed and Magnet Wheel).
The difference between two-wire and three-wire application is shown in Figure 9.
Gear Tooth Sensing
In the case of ferromagnetic toothed wheel application the IC has to be biased by the
south or north pole of a permanent magnet (e.g. SmCO5 (Vacuumschmelze VX145))
with the dimensions 8 mm × 5 mm × 3 mm) which should cover both Hall probes.
The maximum air gap depends on:
– the magnetic field strength (magnet used; pre-induction) and
– the toothed wheel that is used (dimensions, material, etc.; resulting differential field)
a centered distance
of Hall probes
b Hall probes to
IC surface
L IC surface to
tooth wheel
N
S
b
L
a
a = 2.5 mm
b = 0.3 mm
Figure 5
AEA01259
Sensor Spacing
Conversion DIN – ASA
T
m = 25.4 mm/p
T = 25.4 mm CP
d
AEA01260
ASA
DIN
d
z
m
T
Figure 6
Data Sheet
diameter (mm)
p
diameter pitch p
= z/d (inch)
number of teeth
PD
pitch diameter PD = z/p (inch)
module m = d/z (mm)
CP
circular pitch
CP = 1 inch × π/p
pitch T = π × m (mm)
Tooth Wheel Dimensions
14
V 1.1, 2008-01
TLE4921-5U
Application Configurations
Gear Wheel
Hall Sensor 1
Hall Sensor 2
Signal
Processing
S (N)
Circuitry
Permanent Magnet
N (S)
Figure 7
AEA01261
TLE4921-5U, with Ferromagnetic Toothed Wheel
Magnet Wheel
S
S
N
Hall Sensor 1
Hall Sensor 2
Signal
Processing
Circuitry
Figure 8
Data Sheet
AEA01262
TLE4921-5U, with Magnet Wheel
15
V 1.1, 2008-01
TLE4921-5U
Application Configurations
Two-wire-application
Line
1
RL
VS
4
C
VS
Q
2
GND
3
CF
470 nF
VSIGNAL
RS
Sensor
Mainframe
for example : R L = 330 Ω
R S = 120 Ω
AES01263
Three-wire-application
Rp
4
CF
470 nF
1
VS
C
Q
2
GND
3
VSIGNAL
4.7 nF
4.7 nF
Mainframe
for example : R L = 330 Ω
R P = 0 ... 330 Ω
Data Sheet
VS
RL
Sensor
Figure 9
Line
AES01264
Application Circuits
16
V 1.1, 2008-01
TLE4921-5U
Application Configurations
N (S)
S (N)
1
4
B1
B2
Wheel Profile
Missing Tooth
Small Airgap
Magnetic Field Difference
∆ B = B2 _ B1
Large Airgap
∆ BRP = 0.75 mT
∆ BHYS
∆ BOP = _ 0.75 mT
Output Signal VQ
Operate point: B2 _ B1 < ∆ BOP switches the output ON (VQ = LOW)
Release point: B2 _ B1 > ∆ BRP switches the output OFF (VQ = HIGH)
∆ BRP = ∆ BOP + ∆ BHYS
The magnetic field is defined as positive if the south pole of
the magnet shows towards the rear side of the IC housing.
Figure 10
Data Sheet
AED01697
System Operation
17
V 1.1, 2008-01
TLE4921-5U
Typical Performance Characteristics
7
Typical Performance Characteristics
Quiescent Current versus
Supply Voltage
Quiescent Current versus
Temperature
AED03167
10
mA
IS 9
I Q = 40 mA
8
8
7
7
IS ON
6
5
IS OFF
IS ON
5
IS OFF
4
3
3
2
2
0
1
IS Diff
0
5
10
15
I ON = 40 mA
6
4
1
AED03168
10
mA
IS 9
IS Diff
0
-50 -10 30
20 V 25
70 110 150
˚C 230
Tj
VS
Quiescent Current versus
Output Current
Saturation Voltage versus
Temperature
AED03169
10
mA
IS 9
VS = 12 V
VQ
400
mV
AED03170
VS = 4.5 V I Q = 50 mA
8
300
7
250
IS ON
6
5
200
4
150
3
100
2
50
1
0
0
10
20
30
0
-50
40 mA 50
50
100
150 ˚C 200
Tj
I OUT
Data Sheet
0
18
V 1.1, 2008-01
TLE4921-5U
Typical Performance Characteristics
Output Saturation Voltage versus
IQ @ 25°C Tj
Saturation Voltage versus
Supply Voltage
AED03171
300
mV
I Q ±50 mA, VS = 4.5 V
VQ
AED03172
0.40
V
I Q = 40 mA Tj = 25 ˚C
Out Sat Voltage
200
0.30
100
0.25
0
0.20
-100
0.15
-200
0.10
-300
-400
-60
0.05
-40
-20
0
20
0
mA 60
0
5
10
15
20
Center of Switching Points versus
Temperature
BM
Hysteresis versus Temperature
AED03173
B M = ( B OP + B RP)/2 f = 200 Hz
B Hy
max
1
30
VS
IQ
2
mT
25
4
mT
AED03174
B Hy = B RP - B OP f = 200 Hz
3
max
0
2
typ
typ
min
-1
1
min
-2
-60
-20
20
60
100
0
-60
˚C 180
20
60
100
˚C 180
Tj
Tj
Data Sheet
-20
19
V 1.1, 2008-01
TLE4921-5U
Typical Performance Characteristics
Minimum Switching Field versus
Frequency
B min
Minimum Switching Field versus
Frequency
AED03175
1.5
mT
CF = 1 µF
B min
1.0
AED03176
1.5
mT
CF = 1 µF
1.0
Tj = -40 ˚C
Tj = 170 ˚C
Tj = 25 ˚C
Tj = 150 ˚C
0.5
0.5
0 -2
10
10-1
100
0 -2
10
101 kHz 102
10-1
100
f
101 kHz 102
f
Delay Time between Switching Threshold
∆B and Falling Edge of VOUT at Tj = 25°C
Delay Time between Switching Threshold
∆B and Rising Edge of VOUT at Tj = 25°C
25
25
∆B = 2mT, f =200Hz
µs
∆B = 2mT, f =200Hz
µs
t drp
t dop
20
20
15
15
10
10
∆B = 2mT
5
5
∆B = 2mT
∆B = 5mT
∆B = 5mT
0
0
0
5000
10000
15000
20000 Hz 25000
0
f
Data Sheet
5000
10000
15000
20000 Hz 25000
f
20
V 1.1, 2008-01
TLE4921-5U
Typical Performance Characteristics
Delay Time versus Differential Field
Delay Time versus Temperature
t
AED03180
8.5
µs
∆ B = 2 mT, f = 200 Hz
8.0
7.5
tdrp
7.0
tdop
6.5
6.0
5.5
5.0
-60
-10
40
90
140 ˚C 190
T
Rise and Fall Time versus Temperature
t
Rise and Fall Time versus
Output Current
AED03181
40
ns
I Q = 40 mA
t
35
AED03182
120
ns
Tj = 25 ˚C
100
30
80
tr
25
60
tf
tr
20
40
tf
15
20
10
-50
0
50
100
150 ˚C 200
0
Tj
Data Sheet
0
20
40
60
80 mA 100
I OUT
21
V 1.1, 2008-01
TLE4921-5U
Typical Performance Characteristics
Capacitor Voltage versus Temperature
VC
Switching Thresholds versus
Mechanical Stress
AED03183
3.0
V
AED03184
1.0
∆ Brp ,
(∆ Bop )
2.5
Tj = 25 ˚C
0.9
typ
2.0
0.8
max
1.5
min
0.7
1.0
0.6
0.5
0
-50
0
50
100
0.5
150 ˚C 200
0
1
2
3
4 N 5
Tj
F
Filter Sensitivity versus Temperature
Filter Input Resistance versus
Temperature
AED03185
0
mV/mT
SC -1
-2
1.4
-3
1.3
-4
1.2
typ
-5
1.1
-6
1.0
-7
0.9
-8
0.8
-9
0.7
-10
-50
0
50
100
0.6
-50
150 ˚C 200
Tj
Data Sheet
AED03186
1.6
RC
R C @ 25˚C
0
50
100
150 ˚C 200
Tj
22
V 1.1, 2008-01
TLE4921-5U
Typical Performance Characteristics
Delay Time for Power on (VS Switching
from 0 V to 4.5 V) tpon versus Temp.
Periodjitter (1σ) versus Temperature
AED03187
0.40
ms/nF
AED03188
0.50
%
Jitter
@ ∆ B = 10 mT
k
f = 1 KHz, B P = 5 mT
0.40
0.30
0.35
0.25
0.30
0.25
0.20
0.20
0.15
0.15
max
typ
min
0.10
0.10
0.05
0
-50
TLE4921-5U
0.05
0
50
100
0
-40
150 ˚C 200
0
40
80
120
Tj
T
Table 6
˚C 200
Electro Magnetic Compatibility
ref. DIN 40839 part 1; test circuit 1
Parameter
Symbol
Level/Typ
Status
Testpulse 1
Testpulse 2
Testpulse 3a
Testpulse 3b
Testpulse 4
Testpulse 5
VLD
IV / – 100 V
IV /100 V
IV / – 150 V
IV / 100 V
IV / – 7 V
IV / 86.5 V
C
B
C
C
C
C
Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Data Sheet
23
V 1.1, 2008-01
TLE4921-5U
Typical Performance Characteristics
d
Branded Side
Hall-Probe
d : Distance chip to branded side of IC
P-SSO-4-1 : 0.3 ±0.08 mm
AEA02712
Figure 11
Data Sheet
Distance Chip to Upper Side of IC
24
V 1.1, 2008-01
TLE4921-5U
Package Outlines
Package Outlines
5.34 ±0.05
2 A
0.2
12.7 ±1
7˚
7˚
0.6 MAX.
0.2 +0.1
0.5
3 x 1.27 = 3.81
1 -1
4x
6 ±0.5
0.4 ±0.05
18 ±0.5
1.27
CODE
38 MAX.
4
0.25 ±0.05
9 -0.5
1
(14.8)
(Useable Length)
CODE
1 MAX.1)
(0.25)
3.38 ±0.06
3.71 ±0.08
CODE
1 x 45˚±1˚
23.8 ±0.5
1.9 MAX.
1 -0.1
+0.75
5.16 ±0.08
0.1 MAX.
8
4 ±0.3
6.35 ±0.4
12.7 ±0.3
Total tolerance at 10 pitches ±1
A
Adhesive
Tape
Tape
0.25 -0.15
0.39 ±0.1
1) No solder function area
GPO05357
Figure 12
PG-SSO-4-1 (Plastic Single Small Outline Package)
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Data Sheet
25
Dimensions in mm
V 1.1, 2008-01
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG