BSM 200 GT 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE IC BSM 200 GT 120 DN2 1200V 300A Package Ordering Code TRIPACK C67070-A2519-A67 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 300 TC = 125 °C 200 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 600 TC = 125 °C 400 Ptot Power dissipation per IGBT TC = 25 °C W 1400 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC ≤ 0.09 Diode thermal resistance, chip case RthJCD 0.18 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - Semiconductor Group 1 + 150 °C -55 ... + 150 K/W - 55 / 150 / 56 Aug-23-1996 BSM 200 GT 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 8 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 200 A, Tj = 25 °C - 2.5 3 VGE = 15 V, IC = 200 A, Tj = 125 °C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C - 3 4 VCE = 1200 V, VGE = 0 V, Tj = 125 °C - 12 - Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V nA - - 200 AC Characteristics Transconductance gfs VCE = 20 V, IC = 200 A Input capacitance 108 nF - 18 - - 2.5 - - 1 - Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Aug-23-1996 BSM 200 GT 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 200 A RGon = 4.7 Ω Rise time - 180 350 - 80 160 - 750 950 - 70 100 tr VCC = 600 V, VGE = 15 V, IC = 200 A RGon = 4.7 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 200 A RGoff = 4.7 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 200 A RGoff = 4.7 Ω Free-Wheel Diode Diode forward voltage VF V IF = 200 A, VGE = 0 V, Tj = 25 °C - 2.3 2.8 IF = 200 A, VGE = 0 V, Tj = 125 °C - 1.8 - Reverse recovery time trr ns IF = 200 A, VR = -600 V, VGE = 0 V diF/dt = -2000 A/µs, Tj = 125 °C Reverse recovery charge - 400 - Qrr µC IF = 200 A, VR = -600 V, VGE = 0 V diF/dt = -2000 A/µs Tj = 25 °C - 12 - Tj = 125 °C - 36 - Semiconductor Group 3 Aug-23-1996 BSM 200 GT 120 DN2 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 3 1500 tp = 48.0µs W 1300 Ptot A 100 µs IC 1200 1100 10 2 1000 900 800 1 ms 700 600 10 1 500 400 10 ms 300 200 100 0 0 20 40 60 80 100 120 °C 10 0 0 10 160 10 1 10 DC 3 10 2 TC V VCE Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 0 300 A K/W 260 IC ZthJC 240 10 -1 220 200 10 -2 180 160 D = 0.50 140 10 120 -3 0.20 0.10 100 0.05 80 10 -4 60 0.02 single pulse 0.01 40 20 0 0 20 40 60 80 100 120 °C 160 TC Semiconductor Group 10 -5 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Aug-23-1996 BSM 200 GT 120 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C 400 A IC 300 400 A 17V 15V 13V 11V 9V 7V IC 300 250 250 200 200 150 150 100 100 50 50 0 0 1 2 3 V 0 0 5 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 400 A IC 300 250 200 150 100 50 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Aug-23-1996 BSM 200 GT 120 DN2 Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 200 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 20 V nF VGE 16 C 600 V 14 800 V Ciss 10 1 12 10 Coss 8 10 0 Crss 6 4 2 0 0 200 400 600 800 1000 nC 10 -1 0 1400 5 10 15 20 25 30 V 40 VCE QGate Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 0 200 400 Semiconductor Group 600 800 1000 1200 V 1600 VCE 6 0 200 400 600 800 1000 1200 V 1600 VCE Aug-23-1996 BSM 200 GT 120 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 4.7 Ω par.: VCE = 600 V, VGE = ± 15 V, IC = 200 A 10 4 10 4 ns ns t tdoff t 10 3 10 3 tdoff tdon tr tdon tr 10 2 10 2 tf tf 10 1 0 100 200 300 A 10 1 0 500 10 20 30 40 IC Ω 60 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 4.7 Ω par.: VCE = 600V, VGE = ± 15 V, IC = 200 A 100 100 Eon Eon mWs E mWs 80 E 80 70 70 60 60 50 50 Eoff Eoff 40 40 30 30 20 20 10 10 0 0 100 200 300 A 500 IC Semiconductor Group 7 0 0 10 20 30 40 Ω 60 RG Aug-23-1996 BSM 200 GT 120 DN2 Forward characteristics of fast recovery Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj 10 0 400 K/W A IF Diode ZthJC 300 10 -1 250 Tj=125°C Tj=25°C 200 10 -2 D = 0.50 0.20 150 0.10 0.05 10 -3 100 0.02 single pulse 0.01 50 0 0.0 0.5 1.0 1.5 2.0 V 3.0 10 -4 10 -3 10 -2 10 -1 s 10 0 tp VF Semiconductor Group 10 -4 -5 10 8 Aug-23-1996 BSM 200 GT 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 300 g Semiconductor Group 9 Aug-23-1996