BUZ 172 SIPMOS ® Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 172 -100 V -5.5 A 0.6 Ω TO-220 AB C67078-S1451-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 37 °C Values Unit A -5.5 IDpuls Pulsed drain current TC = 25 °C -22 EAS Avalanche energy, single pulse mJ ID = -5.5 A, VDD = -25 V, RGS = 25 Ω L = 8.4 mH, Tj = 25 °C 170 Gate source voltage VGS Power dissipation Ptot TC = 25 °C ± 20 V W 40 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 3.1 Thermal resistance, chip to ambient RthJA ≤ 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group °C 55 / 150 / 56 1 07/96 BUZ 172 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage -100 - - -2.1 -3 -4 VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V IDSS µA VDS = -100 V, VGS = 0 V, Tj = 25 °C - -0.1 -1 VDS = -100 V, VGS = 0 V, Tj = 125 °C - -10 -100 Gate-source leakage current IGSS VGS = -20 V, VDS = 0 V Drain-Source on-resistance - -10 -100 Ω RDS(on) VGS = -10 V, ID = -3.7 A Semiconductor Group nA - 2 0.4 0.6 07/96 BUZ 172 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = -3.7 A Input capacitance 1 pF - 800 1200 - 220 330 - 90 140 Crss VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance 2 Ciss VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance S td(on) ns VDD = -30 V, VGS = -10 V, ID = -2.8 A RGS = 50 Ω Rise time - 20 30 - 120 180 - 70 90 - 55 75 tr VDD = -30 V, VGS = -10 V, ID = -2.8 A RGS = 50 Ω Turn-off delay time td(off) VDD = -30 V, VGS = -10 V, ID = -2.8 A RGS = 50 Ω Fall time tf VDD = -30 V, VGS = -10 V, ID = -2.8 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 172 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - -22 V -1 -1.3 trr ns - 200 - Qrr VR = -30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group -5.5 - VR = -30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = -11 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 0.75 - 07/96 BUZ 172 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ -10 V 45 -6.0 A W -5.0 Ptot ID 35 30 -4.5 -4.0 -3.5 25 -3.0 20 -2.5 15 -2.0 -1.5 10 -1.0 5 0 0 -0.5 0.0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 TC °C 160 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 -10 2 K/W A t = 25.0µs p ID ZthJC 100 µs I V 1 ms 10 -1 DS (o n) = DS / D -10 1 10 0 D = 0.50 R 0.20 10 ms -10 0 0.10 0.05 10 -2 0.02 DC 0.01 single pulse -10 -1 0 -10 -10 1 V -10 10 -3 -7 10 2 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 172 Typ. output characteristics ID = ƒ(VDS) Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS parameter: tp = 80 µs -13 1.8 Ptot = 40W A l VGS [V] j a -4.0 -10 -9 -8 i -7 -6 b -4.5 c -5.0 d -5.5 e -6.0 f -6.5 g -7.0 h h -5 g -4 RDS (on) f -3 -2 -7.5 i -8.0 e f g j -9.0 1.4 0.8 0.6 h l -20.0 0.4 d -1 i VGS [V] = 0.2 a b c d e f -4.0 -6.0 -6.5 -7.0 -7.5 -8.0 -4.5 -5.0 -5.5 c a -4 d 1.0 e -2 c 1.2 k -10.0 0 0 b Ω k -11 ID a -6 -8 b g h i -9.0 -10.0-20.0 0.0 V -11 0 -2 -4 -6 -8 VDS A -12 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 3.2 -14 A S -12 ID gfs -11 2.4 -10 -9 2.0 -8 1.6 -7 -6 1.2 -5 -4 0.8 -3 -2 -1 0 0 0.4 0.0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 VGS Semiconductor Group 6 0 -2 -4 -6 -8 A ID 07/96 -12 BUZ 172 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = -3.7 A, VGS = -10 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 1.7 -4.6 Ω V 98% -4.0 RDS (on) 1.4 VGS(th) 1.2 -3.6 typ -3.2 -2.8 1.0 -2.4 2% 98% 0.8 -2.0 0.6 -1.6 typ -1.2 0.4 -0.8 0.2 -0.4 0.0 -60 -20 20 60 100 °C 0.0 -60 160 -20 20 60 100 Tj °C 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 -10 2 C A IF nF 10 0 -10 1 Ciss Coss 10 -1 -10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 -5 -10 Semiconductor Group -15 -20 -25 -30 V VDS -40 -10 -1 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V VSD 7 07/96 -3.0 BUZ 172 Avalanche energy EAS = ƒ(Tj ) parameter: ID = -5.5 A, VDD = -25 V RGS = 25 Ω, L = 8.4 mH Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 180 -120 V mJ EAS V(BR)DSS -114 140 -112 120 -110 -108 100 -106 -104 80 -102 60 -100 -98 40 -96 -94 20 0 20 40 60 80 100 120 °C 160 Tj Semiconductor Group -92 -90 -60 -20 20 60 100 °C Tj 8 07/96 160 BUZ 172 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96