BSM 100 GT 120 DN2 IGBT Power Module Target data sheet • Three single switches • Including fast free-wheeling diodes • Package with insulated metal base plate • Solderable Terminals Type VCE IC BSM 100 GT 120 DN2 1200V 150A Package Ordering Code TRIPACK C67070-A2520-A67 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 150 TC = 80 °C 100 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 300 TC = 80 °C 200 Ptot Power dissipation per IGBT TC = 25 °C W 680 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC ≤ 0.182 Diode thermal resistance, chip case RthJCD ≤ 0.36 Insulation test voltage, t = 1min. Vis Creepage distance + 150 °C -55 ... + 150 K/W 2500 Vac - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - Semiconductor Group 1 - 55 / 150 / 56 Aug-23-1996 BSM 100 GT 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) V VGE = VCE, IC = 4 mA Collector-emitter saturation voltage VCE(sat) VGE = 15 V, IC = 100 A, Tj = 25 °C - 2.5 3 VGE = 15 V, IC = 100 A, Tj = 125 °C - 3.1 3.7 Zero gate voltage collector current ICES mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C - 1.5 2 VCE = 1200 V, VGE = 0 V, Tj = 125 °C - 6 - Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V nA - - 400 AC Characteristics Transconductance gfs VCE = 20 V, IC = 100 A Input capacitance 54 nF - 6.5 - - 1 - - 0.5 - Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Aug-23-1996 BSM 100 GT 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 100 A RGon = 6.8 Ω Rise time - 160 320 - 80 160 - 400 520 - 70 100 tr VCC = 600 V, VGE = 15 V, IC = 100 A RGon = 6.8 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 100 A RGoff = 6.8 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 100 A RGoff = 6.8 Ω Free-Wheel Diode Diode forward voltage VF V IF = 100 A, VGE = 0 V, Tj = 25 °C - 2.3 2.8 IF = 100 A, VGE = 0 V, Tj = 125 °C - 1.8 - Reverse recovery time trr µs IF = 100 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs, Tj = 125 °C Reverse recovery charge - 0.3 - Qrr µC IF = 100 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C - 4 - Tj = 125 °C - 11 - Semiconductor Group 3 Aug-23-1996 BSM 100 GT 120 DN2 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 3 700 W tp = 15.0µs A 600 Ptot IC 550 10 2 500 100 µs 450 400 10 1 350 1 ms 300 250 10 ms 200 10 0 150 DC 100 50 0 0 20 40 60 80 100 120 °C 10 -1 0 10 160 10 1 10 2 10 3 TC V VCE Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 0 150 A K/W 130 IC ZthJC 120 10 -1 110 100 90 80 10 -2 70 D = 0.50 60 0.20 0.10 50 0.05 10 -3 40 0.02 30 single pulse 0.01 20 10 0 0 20 40 60 80 100 120 °C 160 TC Semiconductor Group 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Aug-23-1996 BSM 100 GT 120 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C IC 200 200 A A 160 140 17V 15V 13V 11V 9V 7V IC 160 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 1 2 3 V 0 0 5 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 200 A IC 160 140 120 100 80 60 40 20 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Aug-23-1996 BSM 100 GT 120 DN2 Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 100 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 20 V nF VGE 16 C 600 V 14 800 V 10 1 Ciss 12 10 8 10 0 Coss 6 Crss 4 2 0 0 100 200 300 400 500 10 -1 0 700 5 10 15 20 25 30 V 40 VCE QGate Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 0 200 400 Semiconductor Group 600 800 1000 1200 V 1600 VCE 6 0 200 400 600 800 1000 1200 V 1600 VCE Aug-23-1996 BSM 100 GT 120 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 6.8 Ω par.: VCE = 600 V, VGE = ± 15 V, IC = 100 A 10 3 10 4 ns t tdoff ns t 10 3 tdon tdoff tr 10 2 tdon tr tf 10 2 tf 10 1 0 50 100 150 A 10 1 0 250 10 20 30 40 IC Ω 60 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 6.8 Ω par.: VCE = 600V, VGE = ± 15 V, IC = 100 A 60 60 Eon mWs mWs E E 40 40 Eon 30 30 20 20 Eoff Eoff 10 0 0 10 50 100 150 A 250 IC Semiconductor Group 7 0 0 10 20 30 40 Ω 60 RG Aug-23-1996 BSM 100 GT 120 DN2 Forward characteristics of fast recovery Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj 10 0 200 A IF Diode K/W 160 ZthJC 10 -1 140 120 Tj=125°C Tj=25°C 100 10 -2 D = 0.50 0.20 80 0.10 60 0.05 10 -3 single pulse 40 0.02 0.01 20 0 0.0 0.5 1.0 1.5 2.0 V 3.0 10 -4 10 -3 10 -2 10 -1 s 10 0 tp VF Semiconductor Group 10 -4 -5 10 8 Aug-23-1996 BSM 100 GT 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 300 g Semiconductor Group 9 Aug-23-1996