INFINEON BUZ310

BUZ 310
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
Pin 1
Pin 2
G
Pin 3
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 310
1000 V
2.5 A
5Ω
TO-218 AA
C67078-A3101-A2
Maximum Ratings
Parameter
Symbol
Drain source voltage
VDS
VDGR
Drain-gate voltage
RGS = 20 kΩ
Values
Unit
1000
V
1000
ID
Continuous drain current
TC = 25 °C
A
2.5
IDpuls
Pulsed drain current
TC = 25 °C
10
Gate source voltage
VGS
Power dissipation
Ptot
TC = 25 °C
± 20
V
W
78
Operating temperature
Tj
-55 ... ...+ 150 °C
Storage temperature
Tstg
-55 ... ...+ 150
Thermal resistance, chip case
RthJC
≤ 1.6
Thermal resistance, chip to ambient
RthJA
75
DIN humidity category, DIN 40 040
C
IEC climatic category, DIN IEC 68-1
Semiconductor Group
K/W
55 / 150 / 56
1
07/96
BUZ 310
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
V(BR)DSS
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
1000
-
-
VGS(th)
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
V
2.1
3
4
IDSS
µA
VDS = 1000 V, VGS = 0 V, Tj = 25 °C
-
20
250
VDS = 1000 V, VGS = 0 V, Tj = 125 °C
-
100
1000
Gate-source leakage current
IGSS
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
-
10
100
Ω
RDS(on)
VGS = 10 V, ID = 1.5 A
Semiconductor Group
nA
-
2
4.5
5
07/96
BUZ 310
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Dynamic Characteristics
Transconductance
gfs
VDS≥ 2 * ID * RDS(on)max, ID = 1.5 A
Input capacitance
0.7
pF
-
1600
2100
-
70
120
-
30
55
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
-
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
1.5
Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
S
td(on)
ns
VDD = 30 V, VGS = 10 V, ID = 2 A
RGS = 50 Ω
Rise time
-
30
45
-
40
60
-
110
140
-
60
80
tr
VDD = 30 V, VGS = 10 V, ID = 2 A
RGS = 50 Ω
Turn-off delay time
td(off)
VDD = 30 V, VGS = 10 V, ID = 2 A
RGS = 50 Ω
Fall time
tf
VDD = 30 V, VGS = 10 V, ID = 2 A
RGS = 50 Ω
Semiconductor Group
3
07/96
BUZ 310
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Reverse Diode
Inverse diode continuous forward current IS
TC = 25 °C
Inverse diode direct current,pulsed
-
-
10
V
1.05
1.3
trr
µs
-
2
-
Qrr
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Semiconductor Group
2.5
-
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
-
VSD
VGS = 0 V, IF = 6 A
Reverse recovery time
-
ISM
TC = 25 °C
Inverse diode forward voltage
A
µC
-
4
15
-
07/96
BUZ 310
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 10 V
Power dissipation
Ptot = ƒ(TC)
2.6
80
A
W
Ptot
2.2
ID
2.0
60
1.8
1.6
50
1.4
40
1.2
1.0
30
0.8
20
0.6
0.4
10
0.2
0
0
0.0
20
40
60
80
100
120
°C
0
160
20
40
60
80
100
120
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
160
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 2
10 1
A
ID
°C
TC
K/W
t = 630.0ns
p
10 1
ZthJC
10 0
1 µs
10 µs
DS
/
D
I
100 µs
V
10 -1
D = 0.50
DS
(o
n)
=
10
0
0.20
1 ms
R
0.10
10 ms
10 -1
0.05
10 -2
0.02
single pulse
DC
0.01
10 -2
0
10
10
1
10
2
V 10
10 -3
-7
10
3
VDS
Semiconductor Group
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
tp
5
07/96
0
BUZ 310
Typ. output characteristics
ID = ƒ(VDS)
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
parameter: tp = 80 µs
6.0
16
Ptot = 78W
a
A
l
kj
i
VGS [V]
a
4.0
5.0
ID
b
c
d
e
f
Ω
h
g
4.5
f
4.0
3.5
e
3.0
d
2.5
2.0
b
4.5
c
5.0
d
5.5
e
6.0
f
6.5
g
7.0
h
7.5
i
8.0
j
9.0
k
10.0
l
1.5
RDS (on)
12
10
8
g
h
6
20.0
i
j
k
4
c
1.0
2 VGS [V] =
b
0.5
a
4.0
4.5
a
0.0
0
10
20
30
40
50
V
0
0.0
65
b
5.0
1.0
c
5.5
d
6.0
e
f
6.5 7.0
2.0
g
7.5
h
i
j
k
8.0 9.0 10.0 20.0
3.0
4.0
VDS
A
5.5
ID
Typ. transfer characteristics ID = f (VGS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
2.0
3.0
A
ID
gfs
S
2.0
1.0
1.5
1.0
0.5
0.5
0.0
0
1
2
3
4
5
6
7
8
V
10
VGS
Semiconductor Group
6
0.0
0.0
0.5
1.0
1.5
2.0
A
ID
07/96
3.0
BUZ 310
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
Drain-source on-resistance
RDS (on) = ƒ(Tj )
parameter: ID = 1.5 A, VGS = 10 V
24
4.6
Ω
V
98%
4.0
20
RDS (on)
VGS(th)
3.6
18
typ
3.2
16
2.8
14
2.4
12
2%
2.0
10
1.6
98%
typ
8
1.2
6
4
0.8
2
0.4
0
-60
0.0
-60
-20
20
60
100
°C
160
-20
20
60
100
°C
Tj
Typ. capacitances
160
Tj
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj , tp = 80 µs
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 1
10 1
nF
A
C
IF
Ciss
10 0
10 0
10 -1
10 -1
Tj = 25 °C typ
Coss
Tj = 150 °C typ
Tj = 25 °C (98%)
Crss
Tj = 150 °C (98%)
10 -2
0
5
10
Semiconductor Group
15
20
25
30
V
VDS
40
10 -2
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
VSD
7
07/96
3.0
BUZ 310
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 4 A
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj )
16
1200
V
V
1160
VGS
V(BR)DSS
1140
12
1120
1100
10
1080
1060
0,2 VDS max
8
0,8 VDS max
1040
1020
6
1000
980
4
960
940
2
920
900
-60
0
-20
20
60
100
°C
160
Tj
Semiconductor Group
8
0
10
20
30
40
50
nC
Q Gate
07/96
65
BUZ 310
Package Outlines
TO-218 AA
Dimension in mm
Semiconductor Group
9
07/96