BAR88... Silicon PIN Diode • Optimized for low current antenna switches in hand held applications • Very low forward resistance (typ. 1.5 Ω @ IF = 1 mA) • Low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.28 pF) • Very low signal distortion BAR88-02L BAR88-02V BAR88-07L4 4 4 1 3 D 1 2 1 Type BAR88-02L BAR88-02V BAR88-07L4* BAR88-099L4* BAR88-099L4 D 1 D 2 1 2 Package TSLP-2-1 SC79 TSLP-4-4 TSLP-4-4 3 D 2 2 Configuration single, leadless single parallel pair, leadless anti-parallel pair, leadless LS(nH) 0.4 0.6 0.4 0.4 Marking UU U UT US * Preliminary Data Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 80 Forward current IF 100 Total power dissipation Ptot BAR88-02L, -07L4, -099L4 Ts ≤ 133°C BAR88-02V, Ts ≤ 123°C Value Unit V mA mW 250 250 150 Junction temperature Tj Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 1 °C Dec-08-2003 BAR88... Thermal Resistance Parameter Symbol Junction - soldering point 1) RthJS Value Unit K/W BAR88-02L, 07L4, -099L4 ≤ 65 BAR88-02V ≤ 105 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 80 - - V - - 50 nA DC Characteristics Breakdown voltage V(BR) I (BR) = 5 µA Reverse current IR VR = 60 V Forward voltage V VF I F = 1 mA - 0.75 0.9 I F = 100 mA - 0.95 1.2 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 Dec-08-2003 BAR88... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz - 0.3 0.4 VR = 0 V, f = 100 MHz - 0.4 - VR = 0 V, f = 1 GHz - 0.28 - VR = 0 V, f = 1.8 GHz - 0.25 - Reverse parallel resistance RP kΩ VR = 0 V, f = 100 MHz - 65 - VR = 0 V, f = 1 GHz - 2.5 - VR = 0 V, f = 1.8 GHz - 1.5 - Forward resistance Ω rf IF = 1 mA, f = 100 MHz - 1.5 2.5 IF = 5 mA, f = 100 MHz - 0.8 - IF = 10 mA, f = 100 MHz - 0.6 - τ rr - 500 - ns I-region width WI - 13 - µm Insertion loss1) |S 21| 2 Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω dB IF = 1 mA, f = 1.8 GHz - -0.11 - IF = 5 mA, f = 1.8 GHz - -0.07 - IF = 10 mA, f = 1.8 GHz - -0.06 - VR = 0 V, f = 0.9 GHz - -15 - VR = 0 V, f = 1.8 GHz - -11 - VR = 0 V, f = 2.45 GHz - -9 - Isolation1) 1BAR88-02L |S 21| 2 in series configuration, Z = 50Ω 3 Dec-08-2003 BAR88... Diode capacitance CT = ƒ (VR) f = Parameter Reverse parallel resistance RP = ƒ(V R) f = Parameter 10 4 0.5 KOhm pF 10 3 100 MHz 1 MHz 100 MHz 1 GHz 1.8 GHz 0.35 Rp CT 0.4 10 2 0.3 1 GHz 10 1 0.25 1.8 GHz 0.2 10 0 0.15 0.1 0 2 4 6 8 10 12 14 16 V 10 -1 0 20 2 4 6 8 10 12 14 16 VR V 20 VR Forward resistance rf = ƒ (IF ) Forward current IF = ƒ (VF) f = 100MHz TA = Parameter 10 2 0 10 A 10 -1 Ohm 10 -2 10 -3 IF rf 10 1 10 -4 -40°C +25°C +85°C +125°C 10 -5 10 0 10 -6 10 -7 10 -8 10 -1 -2 10 10 -1 10 0 10 1 10 -9 0 mA 10 2 IF 0.2 0.4 0.6 0.8 V 1.2 VF 4 Dec-08-2003 BAR88... Forward current IF = ƒ (T S) BAR88-02L, -07L4, -099L4 BAR88-02V 120 mA 120 mA 100 100 90 90 80 80 IF IF Forward current IF = ƒ (T S) 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 15 30 45 60 90 105 120 °C 75 0 0 150 15 30 45 60 90 105 120 °C 75 TS 150 TS Permissible Puls Load R thJS = ƒ (tp) BAR88-02L, -07L4, -099L4 Permissible Pulse Load IFmax / I FDC = ƒ (t p) BAR88-02L, -07L4, -099L4 10 2 10 2 10 IFmax/IFDC RthJS K/W 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 -2 10 -1 °C 10 10 0 -6 10 1 tp 10 -5 10 -4 10 -3 10 -2 °C 10 0 tp 5 Dec-08-2003 BAR88... Permissible Puls Load R thJS = ƒ (tp) BAR88-02V Permissible Pulse Load IFmax / I FDC = ƒ (t p) BAR88-02V 10 3 10 2 I Fmax/IFDC K/W R thJS 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 -2 °C 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 °C tp 10 0 tp Insertion loss |S21|2 = ƒ(f) Isolation |S21|2 = ƒ(f) IF = Parameter VR = Paramter BAR88-02L in series configuration, Z = 50Ω BAR88-02L in series configuration, Z = 50Ω 0 0 dB dB |S21|2 |S21|2 -0.1 -0.15 10 mA 5 mA 1 mA 0.5 mA 0.1 mA -0.2 -0.25 -10 -15 0V 1V 10 V -20 -0.3 -25 -0.35 -0.4 0 1 2 3 4 GHz -30 0 6 f 1 2 3 4 GHz 6 f 6 Dec-08-2003