ETC BAR67-03W

BAR67-03W
Silicon PIN Diode
2
Low loss RF switch
1
RF attenuator
Low series capacitance and resistance
VPS05176
Type
BAR67-03W
Marking
Blue T
Pin Configuration
1=C
2=A
Package
SOD323
Maximum Ratings
Parameter
Symbol
Diode reverse voltage
VR
150
V
Forward current
IF
200
mA
Operating temperature range
Top
-55 ... 150
°C
Storage temperature
Tstg
-55 ... 150
Value
Unit
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
Value
Unit
130
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Jul-09-2001
BAR67-03W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
150
-
-
V
IR
-
-
20
nA
VF
-
0.95
1.2
V
DC Characteristics
V(BR)
Breakdown voltage
I(BR) = 5 µA
Reverse current
VR = 100 V
Forward voltage
IF = 50 mA
AC Characteristics
CT
Diode capacitance
pF
VR = 35 V, f = 1 MHz
-
0.4
0.6
VR = 0 V, f = 100 MHz
-
0.35
0.9
rf
-
1.5
1.8
gp
-
220
-
S
rr
-
0.7
-
µs
Ls
-
1.8
-
nH
Forward resistance
IF = 5 mA, f = 100 MHz
Zero bias conductance
VR = 0 V, f = 100 MHz
Charge carrier life time
IF = 10 mA, IR = 6 mA, IR = 3 mA
Series inductance
2
Jul-09-2001
BAR67-03W
Forward current IF = f (VF )
TA = 25°C
10 3
mA
IF
10 2
10 1
10 0
10 -1
10 -2
0.5
0.6
0.7
0.8
0.9
1
V
1.2
VF
Diode capacitance CT = f (VR)
Forward resistance rf = f(IF )
f = 1MHz
f = 100MHz
10 3
0.8
Ohm
pF
10 2
0.5
rf
CT
0.6
0.3
10 1
1MHz
0.4
100MHz
10 0
0.2
0.1
0
0
5
10
15
20
25
V
10 -1 -3
10
35
VR
10
-2
10
-1
10
0
10
1
mA
10
3
IF
3
Jul-09-2001
BAR67-03W
Forward current IF = f (TS )
250
IF
mA
150
100
50
0
0
20
40
60
80
120 °C
100
150
TS
Permissible Pulse Load RthJS = f(tp )
Permissible Pulse Load
IFmax / IFDC = f(tp)
10 3
10 2
IFmax / IFDC
K/W
RthJS
10 2
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10 1
10 0
10 -1 -6
10
10
-5
10
-4
10
-3
10
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
-2
s
10
10 0 -6
10
0
tp
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
4
Jul-09-2001