BAR67-03W Silicon PIN Diode 2 Low loss RF switch 1 RF attenuator Low series capacitance and resistance VPS05176 Type BAR67-03W Marking Blue T Pin Configuration 1=C 2=A Package SOD323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 150 V Forward current IF 200 mA Operating temperature range Top -55 ... 150 °C Storage temperature Tstg -55 ... 150 Value Unit Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit 130 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-09-2001 BAR67-03W Electrical Characteristics at TA = 25 °C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 150 - - V IR - - 20 nA VF - 0.95 1.2 V DC Characteristics V(BR) Breakdown voltage I(BR) = 5 µA Reverse current VR = 100 V Forward voltage IF = 50 mA AC Characteristics CT Diode capacitance pF VR = 35 V, f = 1 MHz - 0.4 0.6 VR = 0 V, f = 100 MHz - 0.35 0.9 rf - 1.5 1.8 gp - 220 - S rr - 0.7 - µs Ls - 1.8 - nH Forward resistance IF = 5 mA, f = 100 MHz Zero bias conductance VR = 0 V, f = 100 MHz Charge carrier life time IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance 2 Jul-09-2001 BAR67-03W Forward current IF = f (VF ) TA = 25°C 10 3 mA IF 10 2 10 1 10 0 10 -1 10 -2 0.5 0.6 0.7 0.8 0.9 1 V 1.2 VF Diode capacitance CT = f (VR) Forward resistance rf = f(IF ) f = 1MHz f = 100MHz 10 3 0.8 Ohm pF 10 2 0.5 rf CT 0.6 0.3 10 1 1MHz 0.4 100MHz 10 0 0.2 0.1 0 0 5 10 15 20 25 V 10 -1 -3 10 35 VR 10 -2 10 -1 10 0 10 1 mA 10 3 IF 3 Jul-09-2001 BAR67-03W Forward current IF = f (TS ) 250 IF mA 150 100 50 0 0 20 40 60 80 120 °C 100 150 TS Permissible Pulse Load RthJS = f(tp ) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 2 IFmax / IFDC K/W RthJS 10 2 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Jul-09-2001