BAR63-04S Silicon PIN Diode Preliminary data 4 5 PIN diode for high speed switching 6 of RF signals Low forward resistance, small inductance Very low capacitance 2 For frequencies up to 3 GHz 3 1 VPS05604 C1/A2 C3 A4 6 5 4 D2 D1 D4 D3 1 2 3 A1 C2 A3/C4 EHA07464 Type Marking BAR63-04S G4s Pin Configuration Package 1=A1 2=C2 3=A3/C4 4=A4 5=C3 6=C1/A2 SOT363 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 Forward current IF 100 mA Total power dissipation, TS = 115 °C Ptot 250 mW Junction temperature Tj 150 °C Operating temperature range Top -55 ... 150 °C Storage temperature Tstg -55 ... 150 RthJS 180 Value Unit V Thermal Resistance Junction - soldering point 1) K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-27-2001 BAR63-04S Electrical Characteristics at TA = 25 =C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 50 - - V IR - - 10 nA VF - 0.95 1.2 V DC characteristics Breakdown voltage V(BR) I(BR) = 5 µA Reverse current VR = 35 V Forward voltage IF = 100 mA AC characteristics Diode capacitance CT pF VR = 0 V, f = 100 MHz - 0.3 - VR = 5 V, f = 1 MHz - 0.21 0.3 - 0.09 - Case capacitance CC f = 1 MHz Forward resistance rf IF = 5 mA, f = 100 MHz - 1.2 2 IF = 10 mA, f = 100 MHz - 1 - rr - 75 - ns Ls - 0.6 - nH Charge carrier life time IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance 2 Aug-27-2001 BAR63-04S Forward current IF = f (TS ) 200 mA 160 IF 140 120 100 80 60 40 20 0 0 15 30 45 60 90 105 120 °C 75 150 TS Permissible Pulse Load RthJS = f(tp ) Permissible Pulse Load IFmax / IFDC = f(tp) 10 1 10 3 10 IFmax / IFDC RthJS K/W 2 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 1 10 0 -6 10 D=0 0,005 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 3 Aug-27-2001 BAR63-04S Diode capacitance CT = f (VR) Forward resistance rf = f (IF ) f = 1MHz f = 100MHz EHD07139 0.5 CT EHD07138 10 2 rf pF Ω 0.4 10 1 0.3 0.2 10 0 0.1 0 0 10 V VR 20 10 -1 -2 10 30 10 -1 10 0 10 1 mA 10 2 ΙF Forward current IF = f (VF ) TA = 25°C ΙF 10 3 mA EHD07171 BAR 63... 10 2 10 1 10 0 25 ˚C 40 ˚C 85 ˚C 10 -1 10 -2 10 -3 0.3 0.5 0.8 1 V 1.2 VF 4 Aug-27-2001